公开(公告)号：US07547569B2

公开(公告)日：2009-06-16

申请号：US11562573

申请日：2006-11-22

Applicant: Timothy Weidman ,  Li Xu ,  Peter G. Borden

Inventor： Timothy Weidman ,  Li Xu ,  Peter G. Borden

IPC: H01L21/00 ,  H01L21/06

CPC classification number: H01L31/0749 ,  H01L31/03923 ,  H01L31/0465 ,  H01L31/18 ,  Y02E10/541

Abstract: A processing method described herein provides a method of patterning a MoSe2 and/or Mo material, for example a layer of such material(s) in a thin-film structure. According to one aspect, the invention relates to etch solutions that can effectively etch through Mo and/or MoSe2. According to another aspect, the invention relates to etching such materials when such materials are processed with other materials in a thin film photovoltaic device. According to other aspects, the invention includes a process of etching Mo and/or MoSe2 with selectivity to a layer of CIGS material in an overall process flow. According to still further aspects, the invention relates to Mo and/or MoSe2 etch solutions that are useful in an overall photolithographic process for forming a photovoltaic cell and/or interconnects and test structures in a photovoltaic device.

Abstract translation: 本文所述的处理方法提供了一种图案化MoSe 2和/或Mo材料的方法，例如薄膜结构中的这种材料层。 根据一个方面，本发明涉及可以有效地通过Mo和/或MoSe2蚀刻的蚀刻溶液。 根据另一方面，本发明涉及当这种材料在薄膜光伏器件中用其它材料加工时蚀刻这种材料。 根据其它方面，本发明包括在整个工艺流程中对具有选择性的CIGS材料的Mo和/或MoSe2进行蚀刻的工艺。 根据另外的方面，本发明涉及可用于在光伏器件中形成光伏电池和/或互连和测试结构的整体光刻工艺中的Mo和/或MoSe2蚀刻溶液。

公开(公告)号：US20090056745A1

公开(公告)日：2009-03-05

申请号：US11845620

申请日：2007-08-27

Applicant: JENNIFER Y. SUN ,  Senh Thach ,  Xi Zhu ,  Li Xu ,  Anisul Khan

Inventor： JENNIFER Y. SUN ,  Senh Thach ,  Xi Zhu ,  Li Xu ,  Anisul Khan

IPC: C23G1/02

CPC classification number: C23C16/4407 ,  C11D7/08 ,  C11D7/10 ,  C11D11/0047 ,  C11D11/0064

Abstract: A cleaning process for recovering an anodized aluminum part is particularly useful when the part has been exposed to a fluorine-containing plasma in etch reactor. The part is bathed in an agitated solution of a fluoride acid, such as ammonium fluoride, which converts aluminum fluoride to a soluble fluoride. The part is rinsed in water. The pores of the cleaned anodization may be resealed by a submerging the part in hot agitated deionized water.

Abstract translation: 当在蚀刻反应器中暴露于含氟等离子体时，用于回收阳极氧化铝部件的清洁方法是特别有用的。 将该部分浸渍在氟化物酸如氟化铵的搅拌溶液中，其将氟化铝转化为可溶性氟化物。 该部件在水中冲洗。 清洁的阳极氧化的孔可以通过将部件浸没在热的搅拌去离子水中来重新密封。

公开(公告)号：US20090025751A1

公开(公告)日：2009-01-29

申请号：US12284540

申请日：2008-09-22

Applicant: Xikun Wang ,  Li Xu ,  Jennifer Y. Sun

Inventor： Xikun Wang ,  Li Xu ,  Jennifer Y. Sun

IPC: B08B3/08 ,  B08B3/12

CPC classification number: C30B35/00 ,  C23C4/11 ,  C23C4/18 ,  C23C14/00 ,  C23C16/4404 ,  C23C28/042 ,  Y10S134/902 ,  Y10T428/26

Abstract: Disclosed herein is a cleaning method useful in removing contaminants from a surface of a coating which comprises an oxide or fluoride of a Group III B metal. Typically the coating overlies an aluminum substrate which is present as part of a semiconductor processing apparatus. The coating typically comprises an oxide or a fluoride of Y, Sc, La, Ce, Eu, Dy, or the like, or yttrium-aluminum-garnet (YAG). The coating may further comprise about 20 volume % or less of Al2O3.

Abstract translation: 本文公开了一种可用于从包含IIIBB族金属的氧化物或氟化物的涂层表面除去污染物的清洁方法。 通常，涂层覆盖作为半导体处理装置的一部分存在的铝基板。 涂层通常包含Y，Sc，La，Ce，Eu，Dy等的氧化物或氟化物，或钇 - 铝 - 石榴石（YAG）。 涂层可以进一步包含约20体积％或更少的Al 2 O 3。

公开(公告)号：US20080264565A1

公开(公告)日：2008-10-30

申请号：US11796211

申请日：2007-04-27

Applicant: Jennifer Y. Sun ,  Ren-Guan Duan ,  Jie Yuan ,  Li Xu ,  Kenneth S. Collins

Inventor： Jennifer Y. Sun ,  Ren-Guan Duan ,  Jie Yuan ,  Li Xu ,  Kenneth S. Collins

IPC: C04B35/48 ,  C23C16/22 ,  H01L21/3065

CPC classification number: C23C16/4404 ,  C04B35/111 ,  C04B35/505 ,  C04B41/009 ,  C04B41/5045 ,  C04B41/5346 ,  C04B41/87 ,  C04B41/91 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3244 ,  C04B2235/77 ,  C04B2235/785 ,  C04B2235/786 ,  C04B2235/80 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2235/9692 ,  H01J37/32467 ,  C04B41/4527 ,  C04B41/5031 ,  C04B41/5042 ,  C04B35/10 ,  C04B35/14 ,  C04B35/581

Abstract: A ceramic article which is resistant to erosion by halogen-containing plasmas used in semiconductor processing. The ceramic article includes ceramic which is multi-phased, typically including two phase to three phases. The ceramic is formed from yttrium oxide at a molar concentration ranging from about 50 mole % to about 75 mole %; zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %; and at least one other component, selected from the group consisting of aluminum oxide, hafnium oxide, scandium oxide, neodymium oxide, niobium oxide, samarium oxide, ytterbium oxide, erbium oxide, cerium oxide, and combinations thereof, at a molar concentration ranging from about 10 mole % to about 30 mole %.

Abstract translation: 一种耐半导体加工中含卤素等离子体侵蚀的陶瓷制品。 陶瓷制品包括多相陶瓷，通常包括两相至三相。 陶瓷由摩尔浓度范围为约50摩尔％至约75摩尔％的氧化钇形成; 摩尔浓度范围为约10摩尔％至约30摩尔％的氧化锆; 和选自氧化铝，氧化铪，氧化钪，氧化钕，氧化铌，氧化钐，氧化镱，氧化铒，氧化铈及其组合中的至少一种其它组分，摩尔浓度范围为 约10摩尔％至约30摩尔％。

公开(公告)号：US07389462B1

公开(公告)日：2008-06-17

申请号：US10781553

申请日：2004-02-17

Applicant: Linghsiao Wang ,  Li Xu

Inventor： Linghsiao Wang ,  Li Xu

IPC: H04L1/18 ,  G08C25/02

CPC classification number: H04L1/188

Abstract: Disclosed is a system and methods for accelerating network protocol processing for devices configured to process network traffic at relatively high data rates. The system incorporates a hardware-accelerated protocol processing module that handles steady state network traffic and a software-based processing module that handles infrequent and exception cases in network traffic processing.

Abstract translation: 公开了一种用于加速网络协议处理的系统和方法，该设备被配置为以相对高的数据速率处理网络流量。 该系统包含处理稳态网络流量的硬件加速协议处理模块，以及处理网络流量处理中不频繁和异常情况的基于软件的处理模块。

公开(公告)号：US07383347B2

公开(公告)日：2008-06-03

申请号：US09908306

申请日：2001-07-18

Applicant: Maria Rene Ebling ,  Guerney Douglass Holloway Hunt ,  Hui Lei ,  Gregory Sallmard Stewart ,  Li Xu

Inventor： Maria Rene Ebling ,  Guerney Douglass Holloway Hunt ,  Hui Lei ,  Gregory Sallmard Stewart ,  Li Xu

IPC: G06F13/00

CPC classification number: H04L65/104 ,  H04L29/06027 ,  H04L65/103 ,  H04L65/605 ,  H04L67/04 ,  H04L67/303 ,  H04L67/306 ,  H04L69/329

Abstract: A hierarchical gateway system for use in a message delivery system is disclosed, in which each tier of gateways in the hierarchy includes means for transforming incoming messages in a manner required by downstream end-user devices. The hierarchical gateway system has the advantage of being scalable and extensible while avoiding transmission bottlenecks as the number of end-user device types, and their differing system requirements, increase. The invention is operable in the context of a notification server architecture, as well as the Web.

Abstract translation: 公开了一种用于消息传递系统的分级网关系统，其中层级中的每个网关层包括以下游终端用户设备所要求的方式来转换传入消息的装置。 分层网关系统具有可扩展性和可扩展性的优点，同时避免传输瓶颈，因为最终用户设备类型的数量及其不同的系统要求增加。 本发明可以在通知服务器架构以及Web的上下文中操作。

公开(公告)号：US20080017516A1

公开(公告)日：2008-01-24

申请号：US11766723

申请日：2007-06-21

Applicant: Nianci Han ,  Li Xu ,  Hong Shih ,  Yang Zhang ,  Danny Lu ,  Jennifer Sun

Inventor： Nianci Han ,  Li Xu ,  Hong Shih ,  Yang Zhang ,  Danny Lu ,  Jennifer Sun

IPC: C25D5/16

CPC classification number: C25D3/54 ,  C23C16/4404 ,  C23C16/4411 ,  C23C28/321 ,  C23C28/322 ,  C23C28/34 ,  C23C28/345 ,  C23C28/3455 ,  C23C28/36 ,  C23C28/42 ,  C23C30/00 ,  C23C30/005 ,  C25D3/44 ,  C25D3/56 ,  C25D5/18 ,  C25D5/50 ,  H01J37/32477 ,  H01L21/67115 ,  Y10T428/12458 ,  Y10T428/12611 ,  Y10T428/12618 ,  Y10T428/12667 ,  Y10T428/12736 ,  Y10T428/12778 ,  Y10T428/12806

Abstract: A method of forming a component capable of being exposed to a plasma in a process chamber comprises forming a structure comprising a surface and electroplating yttrium, and optionally aluminum or zirconium, onto the surface. Thereafter, the electroplated layer can be annealed to oxide the yttrium and other electroplated species.

Abstract translation: 形成能够在处理室中暴露于等离子体的组分的方法包括在表面上形成包括表面和电镀钇以及任选的铝或锆的结构。 此后，可以将电镀层退火以氧化钇和其它电镀物质。

公开(公告)号：US07213732B2

公开(公告)日：2007-05-08

申请号：US11068344

申请日：2005-02-28

Applicant: Craig A Schell ,  Ashok Samuel Baskar ,  Paul G Gross ,  Charles L Bradenbaugh ,  Robert Alan Berry ,  David C Tomayko ,  Li Xu

Inventor： Craig A Schell ,  Ashok Samuel Baskar ,  Paul G Gross ,  Charles L Bradenbaugh ,  Robert Alan Berry ,  David C Tomayko ,  Li Xu

IPC: B25C1/04

CPC classification number: B25C1/043 ,  B25C1/008 ,  B25C1/046 ,  B25C1/06 ,  Y10T16/44

Abstract: A contact trip assembly for a power nailer, wherein a contact member includes a curved portion that loops rearwardly towards a handle of the nailer. Also provided is an adjustment assembly including an adjustment plate and a pinion gear, a trigger that is slidably engageable within a housing of the tool, a trigger lock including a ring element, an anti-discharge mechanism including a stop member, and a contact trip lock.

Abstract translation: 一种用于电动打钉机的接触跳闸组件，其中，接触构件包括向后朝向所述敲钉器的手柄回转的弯曲部分。 还提供了一种调节组件，包括调节板和小齿轮，可滑动地接合在工具的壳体内的触发器，包括环形元件的触发器锁，包括止动构件的防放电机构和接触脱扣 锁。

公开(公告)号：US06508911B1

公开(公告)日：2003-01-21

申请号：US09375243

申请日：1999-08-16

Applicant: Nianci Han ,  Hong Shih ,  Jennifer Y. Sun ,  Li Xu

Inventor： Nianci Han ,  Hong Shih ,  Jennifer Y. Sun ,  Li Xu

IPC: H05H100

CPC classification number: H01J37/32467 ,  C23C16/27 ,  H01J37/32477

Abstract: A diamond coating formed on a bulk member used in a plasma processing chamber for processing a substrate such as a semiconductor wafer. The coating is particularly useful in a plasma etching chamber using a chlorine-based chemistry to etch metal. One class of such parts includes a dielectric chamber wall, in particular, a chamber wall through which RF or microwave energy is coupled into the chamber to support the plasma. For example, an RF inductive coil is positioned outside the chamber wall and inductively couples energy into the chamber. Exemplary substrates for the diamond coating include alumina, silicon nitride, silicon carbide, polysilicon, and a SiC/Si composite. Amorphous carbon may be substituted for diamond.

Abstract translation: 在用于处理诸如半导体晶片的基板的等离子体处理室中的主体部件上形成的金刚石涂层。 该涂层在使用氯基化学蚀刻金属的等离子体蚀刻室中特别有用。 一类这样的部件包括电介质室壁，特别是室壁，RF或微波能量通过室壁耦合到室中以支撑等离子体。 例如，RF感应线圈定位在室壁外部并且将能量感应地耦合到腔室中。 用于金刚石涂层的示例性基底包括氧化铝，氮化硅，碳化硅，多晶硅和SiC / Si复合材料。 无定形碳可以代替金刚石。

公开(公告)号：US06476398B1

公开(公告)日：2002-11-05

申请号：US09514080

申请日：2000-02-26

Applicant: Li Xu ,  Richard Barnard

Inventor： Li Xu ,  Richard Barnard

IPC: G21K108

CPC classification number: H01J37/21 ,  H01J37/28 ,  H01J2237/1532 ,  H01J2237/216

Abstract: Embodiments in accordance with the invention provide respectively for auto-focus, auto-contrast, and auto-correction of astigmatism in both x and y directions, are independent of focus-induced-image-rotation, sample feature orientation and image deformation, and focus-induced-image magnification change, and are insensitive to various kinds of noise. Poor image contrast is handled by an auto-contrast capability. Embodiments in accordance with the invention can achieve high reliability and repeatability, while providing for faster operation than most prior-art methods.

Abstract translation: 根据本发明的实施例分别提供了在x和y方向上的像散的自动聚焦，自动对比度和自动校正，独立于聚焦感应图像旋转，样本特征取向和图像变形以及焦点 诱导图像放大变化，并且对各种噪声不敏感。 较差的图像对比度由自动对比度处理。 根据本发明的实施例可以实现高可靠性和重复性，同时提供比大多数现有技术方法更快的操作。