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公开(公告)号：US11348767B2
公开(公告)日：2022-05-31
申请号：US15930874
申请日：2020-05-13
Inventor： Martin L. Zucker , Peter J. Lembesis , Ryan M. Pakulski , Shawming Ma
IPC: H01J37/32 , H01L21/68 , H01L21/203 , H01L21/677 , B25J11/00 , B25J15/00 , H01L21/67 , H01L21/683 , H01L21/687
Abstract: A plasma processing apparatus is provided. The plasma processing apparatus includes a processing chamber defining a vertical direction and a lateral direction. The plasma processing apparatus includes a pedestal disposed within the processing chamber. The pedestal is configured to support the substrate. The plasma processing apparatus includes a radio frequency (RF) disposed within the processing chamber. The RF bias electrode defines a RF zone extending between a first end of the RF bias electrode and a second end of the RF bias electrode along the lateral direction. The plasma processing apparatus includes a focus ring disposed within the processing chamber. The plasma processing apparatus further includes a focus ring adjustment assembly. The focus ring adjustment assembly includes a lift pin positioned outside of the RF zone. The lift pin is movable along the vertical direction to adjust a distance between the pedestal and the focus ring along the vertical direction.
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公开(公告)号：US20210257196A1
公开(公告)日：2021-08-19
申请号：US17225547
申请日：2021-04-08
Inventor： Shawming Ma , Hua Chung , Michael X. Yang , Dixit V. Desai , Ryan M. Pakulski
IPC: H01J37/32 , H01L21/3065 , H01L21/306 , H01L21/3213 , H01L21/311
Abstract: Plasma processing apparatus and methods are provided. In one example implementation, the plasma processing apparatus includes a processing chamber. The plasma processing apparatus includes a pedestal disposed in the processing chamber. The pedestal is operable to support a workpiece. The plasma processing apparatus includes a plasma chamber disposed above the processing chamber in a vertical direction. The plasma chamber includes a dielectric sidewall. The plasma processing apparatus includes a separation grid separating the processing chamber from the plasma chamber. The plasma processing apparatus includes a first plasma source proximate the dielectric sidewall. The first plasma source is operable to generate a remote plasma in the plasma chamber above the separation grid. The plasma processing apparatus includes a second plasma source. The second plasma source is operable to generate a direct plasma in the processing chamber below the separation grid.
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公开(公告)号：US10950428B1
公开(公告)日：2021-03-16
申请号：US16556938
申请日：2019-08-30
Inventor： Ting Xie , Hua Chung , Xinliang Lu , Shawming Ma , Michael X. Yang
Abstract: Processes for providing nitridation on a workpiece, such as a semiconductor, are provided. In one example implementation, a method can include supporting a workpiece on a workpiece support. The method can include exposing the workpiece to species generated from a capacitively coupled plasma to provide nitridation on the workpiece. The method can also include exposing the workpiece to species generated form an inductively coupled plasma to provide nitridation on the workpiece.
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公开(公告)号：US20210020411A1
公开(公告)日：2021-01-21
申请号：US16514237
申请日：2019-07-17
Inventor： Stephen E. Savas , Shawming Ma
IPC: H01J37/32
Abstract: Plasma processing apparatus and associated methods are provided. In one example, a plasma processing apparatus can include a plasma chamber configured to be able to hold a plasma. The plasma processing apparatus can include a dielectric window forming at least a portion of a wall of the plasma chamber. The plasma processing apparatus can include an inductive coupling element located proximate the dielectric window. The inductive coupling element can be configured to generate a plasma from the process gas in the plasma chamber when energized with radio frequency (RF) energy. The plasma processing apparatus can include a processing chamber having a workpiece support configured to support a workpiece. The plasma processing apparatus can include an electrostatic shield located between the inductive coupling element and the dielectric window. The electrostatic shield can be grounded via a tunable reactive impedance circuit to a ground reference.
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公开(公告)号：US20210020404A1
公开(公告)日：2021-01-21
申请号：US16514464
申请日：2019-07-17
Inventor： Stephen E. Savas , Shawming Ma
IPC: H01J37/32
Abstract: Plasma processing apparatus and associated methods are provided. In one example, a method can include admitting a process gas into a plasma chamber. The method can include exciting with RF energy an inductive coupling element to initiate ignition of a plasma induced in the process gas. The method can include adjusting an RF voltage of an electrostatic shield located between the inductive coupling element and the plasma chamber. The electrostatic shield can have a stray capacitance to a ground reference. The method can include conducting an ion-assisted etching process on the workpiece based at least in part on the RF voltage of the electrostatic shield.
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Patent Agency Ranking
公开(公告)号：US10790119B2
公开(公告)日：2020-09-29
申请号：US15851922
申请日：2017-12-22
Inventor： Shawming Ma , Vladimir Nagorny , Dixit V. Desai , Ryan Pakulski
IPC: H01L21/311 , H01J37/32 , H01L21/67 , B08B7/00 , H01L21/02
Abstract: Plasma processing with post plasma gas injection is provided. In one example implementation, a plasma processing apparatus includes a plasma chamber. The apparatus includes a processing chamber separated from the plasma chamber. The processing chamber includes a substrate holder operable to support a workpiece. The apparatus includes a plasma source configured to generate a plasma in the plasma chamber. The apparatus includes a separation grid separating the plasma chamber from the processing chamber. The separation grid can be configured to filter one or more ions generated in the plasma and allow the passage of neutral particles from the plasma chamber to the processing chamber. The apparatus can include at least one gas port configured to inject a gas into neutral particles passing through the separation grid.
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公开(公告)号：US20200227239A1
公开(公告)日：2020-07-16
申请号：US16245973
申请日：2019-01-11
Applicant: Mattson Technology, Inc.
Inventor： Stephen Edward Savas , Chen-An Chen , Shawming Ma
IPC: H01J37/32
Abstract: Electrostatic shields for inductive plasma sources are provided. In one implementations, a plasma processing apparatus can include a plasma chamber, a dielectric wall forming at least a portion of the plasma chamber, an inductive coupling element located proximate the dielectric wall. The inductive coupling element can generate a plasma in the plasma chamber when energized with radio frequency (RF) energy. The plasma processing apparatus can further include an electrostatic shield located between the inductive coupling element and the dielectric wall. The electrostatic shield can include a plurality of shield plates, slots, and/or layers.
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公开(公告)号：US20190189479A1
公开(公告)日：2019-06-20
申请号：US16208003
申请日：2018-12-03
Applicant: Mattson Technology, Inc.
Inventor： Shuang Meng , Shawming Ma , Michael X. Yang
CPC classification number: H01L21/67213 , H01J37/32357 , H01J37/32449 , H01L21/67023
Abstract: Processes and apparatuses for the treatment of semiconductor workpieces are provided. In some embodiments, a method can include placing the workpiece into a process chamber; vaporizing a solvent to create a vaporized solvent; introducing the vaporized solvent into the process chamber; and exposing the workpiece to the vaporized solvent.
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公开(公告)号：US20190131112A1
公开(公告)日：2019-05-02
申请号：US16162741
申请日：2018-10-17
Applicant: Mattson Technology, Inc.
Inventor： Shawming Ma , Dixit V. Desai , Ryan M. Pakulski
IPC: H01J37/32 , H01L21/687 , H01L21/68
Abstract: Plasma processing apparatus for processing a bevel portion of a substrate, such as a semiconductor wafer are provided. In one example implementation, a plasma processing apparatus includes a processing chamber and a plasma chamber separated from the processing chamber by a separation grid. The apparatus includes an inductively coupled plasma source configured to generate a plasma in the plasma chamber. The apparatus includes a pedestal disposed within the processing chamber. The pedestal can be configured to support a semiconductor wafer. The separation grid can have an edge portion and a blocking portion. The edge portion can be disposed above an edge portion of the semiconductor wafer when supported on the pedestal. The edge portion of the separation grid can have a plurality of holes configured to allow the passage of active radicals generating in the plasma to the processing chamber.
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公开(公告)号：US10078266B2
公开(公告)日：2018-09-18
申请号：US15441332
申请日：2017-02-24
Applicant: Mattson Technology, Inc.
Inventor： Wei-Hua Liou , Chun-Yen Kang , Vijay M. Vaniapura , Hai-Au M. Phan-Vu , Shawming Ma
IPC: G03F7/42 , H01L21/66 , H01L21/311
CPC classification number: G03F7/42 , G03F7/423 , G03F7/427 , H01J2237/3342 , H01L21/31133 , H01L21/31138 , H01L22/24
Abstract: Processes for removing a photoresist from a substrate after, for instance, ion implantation are provided. In one example implementation, a process can include placing a substrate having a bulk photoresist and a crust formed on the bulk photoresist in a processing chamber. The process can include initiating a first strip process in the processing chamber. The process can include accessing an optical emission signal associated with a plasma during the first strip process. The process can include identifying an endpoint for the first strip process based at least in part on the optical emission signal. The process can include terminating the first strip process based at least in part on the endpoint. The process can include initiating a second strip process to remove the photoresist from the substrate.
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