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1.发明申请公开(公告)号：US20210343506A1
公开(公告)日：2021-11-04
申请号：US17245803
申请日：2021-04-30
Inventor： Ting Xie , Haochen Li , Shuang Meng , Qiqun Zhang , Dave Kohl , Shawming Ma , Haichun Yang , Hua Chung , Ryan M. Pakulski , Michael X. Yang
IPC: H01J37/32 , H01L21/67 , H01L21/3065
Abstract: Apparatus and methods for processing a workpiece using a plasma are provided. In one example implementation, an apparatus can include a processing chamber. The apparatus can include a plasma chamber comprising a dielectric tube defining a sidewall. The apparatus can include an inductively coupled plasma source. The inductively coupled plasma source can include an RF generator configured to energize an induction coil disposed about the dielectric tube. The apparatus can include a separation grid separating the processing chamber from the plasma chamber. The apparatus can include a controller configured to operate the inductively coupled plasma source in a pulsed mode. During the pulsed mode the RF generator is configured to apply a plurality of pulses of RF power to the induction coil. A frequency of pulses can be in a range of about 1 kHz to about 100 kHz.
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公开(公告)号：US20180053628A1
公开(公告)日：2018-02-22
申请号：US15591163
申请日：2017-05-10
Applicant: Mattson Technology, Inc.
Inventor： Vijay M. Vaniapura , Shawming Ma , Vladimir Nagorny , Ryan M. Pakulski
CPC classification number: H01J37/3244 , H01J37/32357 , H01J37/32422 , H01J37/32522 , H01J37/32623 , H01J37/32724 , H01J2237/32 , H01L21/67248
Abstract: Separation grids for plasma processing apparatus are provided. In some embodiments, a plasma processing apparatus includes a plasma chamber. The plasma processing apparatus includes a processing chamber. The processing chamber can be separated from the plasma chamber. The apparatus can include a separation grid. The separation grid can separate the plasma chamber and the processing chamber. The apparatus can include a temperature control system. The temperature control system can be configured to regulate the temperature of the separation grid to affect a uniformity of a plasma process on a substrate. In some embodiments, a separation grid can have a varying thickness profile across a cross-section of the separation grid to affect a flow of neutral species through the separation grid.
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公开(公告)号：US20230091035A1
公开(公告)日：2023-03-23
申请号：US17994985
申请日：2022-11-28
Inventor： Martin L. Zucker , Peter J. Lembesis , Ted Tevis , Ryan M. Pakulski , Michael X. Yang
IPC: H01J37/32 , H01L21/677 , H01L21/68 , B25J11/00 , B25J15/00 , H01L21/67 , H01L21/683 , H01L21/687 , H01L21/02
Abstract: Systems and methods for processing workpieces, such as semiconductor workpieces are provided. One example embodiment is directed to a processing system for processing a plurality of workpieces. The processing system can include a loadlock chamber, a transfer chamber, and at least two processing chamber having two or more processing stations. The processing system further includes a storage chamber for storing replaceable parts. The transfer chamber includes a workpiece handling robot. The workpiece handling robot can be configured to transfer a plurality of replaceable parts from the processing stations to the storage chamber.
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公开(公告)号：US20190198301A1
公开(公告)日：2019-06-27
申请号：US16218931
申请日：2018-12-13
Applicant: Mattson Technology, Inc.
Inventor： Shawming Ma , Hua Chung , Michael X. Yang , Dixit V. Desai , Ryan M. Pakulski
IPC: H01J37/32 , H01L21/3065 , H01L21/687
CPC classification number: H01J37/32899 , H01J37/32119 , H01J37/32357 , H01J37/32449 , H01J37/32458 , H01J37/32568 , H01J37/32715 , H01J2237/3341 , H01J2237/3342 , H01J2237/3345 , H01L21/3065 , H01L21/68742
Abstract: Plasma processing apparatus and methods are provided. In one example implementation, the plasma processing apparatus includes a processing chamber. The plasma processing apparatus includes a pedestal disposed in the processing chamber. The pedestal is operable to support a workpiece. The plasma processing apparatus includes a plasma chamber disposed above the processing chamber in a vertical direction. The plasma chamber includes a dielectric sidewall. The plasma processing apparatus includes a separation grid separating the processing chamber from the plasma chamber. The plasma processing apparatus includes a first plasma source proximate the dielectric sidewall. The first plasma source is operable to generate a remote plasma in the plasma chamber above the separation grid. The plasma processing apparatus includes a second plasma source. The second plasma source is operable to generate a direct plasma in the processing chamber below the separation grid.
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公开(公告)号：US20170207077A1
公开(公告)日：2017-07-20
申请号：US15403455
申请日：2017-01-11
Applicant: Mattson Technology, Inc.
Inventor： Vladimir Nagorny , Shawming Ma , Vijay M. Vaniapura , Ryan M. Pakulski
IPC: H01L21/02 , H01L21/027 , B08B7/00 , H01J37/32
CPC classification number: H01L21/0206 , B08B7/0035 , H01J37/32009 , H01J37/32357 , H01J37/32449 , H01J37/32651 , H01J2237/334 , H01L21/0273
Abstract: Systems, methods, and apparatus for processing a substrate in a plasma processing apparatus using a variable pattern separation grid are provided. In one example implementation, a plasma processing apparatus can have a plasma chamber and a processing chamber separated from the plasma chamber. The apparatus can further include a variable pattern separation grid separating the plasma chamber and the processing chamber. The variable pattern separation grid can include a plurality grid plates. Each grid plate can have a grid pattern with one or more holes. At least one of the plurality of grid plates is movable relative to the other grid plates in the plurality of grid plates such that the variable pattern separation grid can provide a plurality of different composite grid patterns.
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Patent Agency Ranking
公开(公告)号：US11508560B2
公开(公告)日：2022-11-22
申请号：US15930910
申请日：2020-05-13
Inventor： Martin L. Zucker , Peter J. Lembesis , Ryan M. Pakulski , Shawming Ma
IPC: H01L21/20 , H01J37/32 , H01L21/203 , H01L21/677 , H01L21/68 , B25J11/00 , B25J15/00 , H01L21/67 , H01L21/683 , H01L21/687
Abstract: A focus ring adjustment assembly of a system for processing workpieces under vacuum, where the focus ring may include a lower side having a first surface portion and a second surface portion, the first surface portion being vertically above the second surface portion. The adjustment assembly may include a pin configured to selectively contact the first surface portion of the focus ring, and an actuator operable to move the pin along the vertical direction between an extended position and a retracted position. The extended position of the pin may be associated with the distal end of the pin contacting the first surface of the focus ring and the focus ring being accessible for removal by a workpiece handling robot from the vacuum process chamber.
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公开(公告)号：US20210398775A1
公开(公告)日：2021-12-23
申请号：US17387393
申请日：2021-07-28
Inventor： Shawming Ma , Vladimir Nagorny , Dixit V. Desai , Ryan M. Pakulski
Abstract: Plasma processing apparatus for processing a workpiece are provided. In one example embodiments, a plasma processing apparatus for processing workpiece includes a processing chamber, a plasma chamber separated from the processing chamber by a separation grid, an inductively coupled plasma source configured to generate a plasma in the plasma chamber, and a gas injection insert arranged in the plasma chamber having a peripheral portion and a center portion, the center portion extends a vertical distance past the peripheral portion. The apparatus includes a pedestal disposed within the processing chamber configured to support a workpiece, a first gas injection zone configured to inject a process gas into the process chamber at a first flat surface, and a second gas injection zone configured to inject a process gas into the process chamber at a second flat surface. The separation grid has a plurality of holes configured to allow the passage of neutral particles generated in the plasma to the processing chamber.
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公开(公告)号：US11348767B2
公开(公告)日：2022-05-31
申请号：US15930874
申请日：2020-05-13
Inventor： Martin L. Zucker , Peter J. Lembesis , Ryan M. Pakulski , Shawming Ma
IPC: H01J37/32 , H01L21/68 , H01L21/203 , H01L21/677 , B25J11/00 , B25J15/00 , H01L21/67 , H01L21/683 , H01L21/687
Abstract: A plasma processing apparatus is provided. The plasma processing apparatus includes a processing chamber defining a vertical direction and a lateral direction. The plasma processing apparatus includes a pedestal disposed within the processing chamber. The pedestal is configured to support the substrate. The plasma processing apparatus includes a radio frequency (RF) disposed within the processing chamber. The RF bias electrode defines a RF zone extending between a first end of the RF bias electrode and a second end of the RF bias electrode along the lateral direction. The plasma processing apparatus includes a focus ring disposed within the processing chamber. The plasma processing apparatus further includes a focus ring adjustment assembly. The focus ring adjustment assembly includes a lift pin positioned outside of the RF zone. The lift pin is movable along the vertical direction to adjust a distance between the pedestal and the focus ring along the vertical direction.
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公开(公告)号：US20210257196A1
公开(公告)日：2021-08-19
申请号：US17225547
申请日：2021-04-08
Inventor： Shawming Ma , Hua Chung , Michael X. Yang , Dixit V. Desai , Ryan M. Pakulski
IPC: H01J37/32 , H01L21/3065 , H01L21/306 , H01L21/3213 , H01L21/311
Abstract: Plasma processing apparatus and methods are provided. In one example implementation, the plasma processing apparatus includes a processing chamber. The plasma processing apparatus includes a pedestal disposed in the processing chamber. The pedestal is operable to support a workpiece. The plasma processing apparatus includes a plasma chamber disposed above the processing chamber in a vertical direction. The plasma chamber includes a dielectric sidewall. The plasma processing apparatus includes a separation grid separating the processing chamber from the plasma chamber. The plasma processing apparatus includes a first plasma source proximate the dielectric sidewall. The first plasma source is operable to generate a remote plasma in the plasma chamber above the separation grid. The plasma processing apparatus includes a second plasma source. The second plasma source is operable to generate a direct plasma in the processing chamber below the separation grid.
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公开(公告)号：US20200243305A1
公开(公告)日：2020-07-30
申请号：US16744244
申请日：2020-01-16
Inventor： Weimin Zeng , Chun Yan , Dixit V. Desai , Hua Chung , Michael X. Yang , Peter Lembesis , Ryan M. Pakulski , Martin Zucker
IPC: H01J37/32
Abstract: A plasma process apparatus is provided. The plasma processing apparatus includes a plasma chamber and a processing chamber. The processing chamber includes a substrate holder operable to support a substrate. The plasma processing apparatus further includes a separation grid separating the plasma chamber from the processing chamber. The separation grid includes a gas delivery system. The gas delivery system defines a channel, an inlet and a plurality of outlets in fluid communication with the inlet via the channel. The gas delivery system is configured to reduce non-uniformities associated with a treatment process performed on the substrate.
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