公开(公告)号：US20180097092A1

公开(公告)日：2018-04-05

申请号：US15820897

申请日：2017-11-22

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Isao OBU ,  Yasunari UMEMOTO ,  Shigeru YOSHIDA ,  Masahiro SHIBATA

IPC: H01L29/737 ,  H01L29/12 ,  H01L29/66 ,  H01L29/417 ,  H01L29/08 ,  H01L29/40

CPC classification number: H01L29/737 ,  H01L29/0817 ,  H01L29/0821 ,  H01L29/12 ,  H01L29/20 ,  H01L29/401 ,  H01L29/41708 ,  H01L29/66242 ,  H01L29/66318 ,  H01L29/7371

Abstract: An HBT includes a semiconductor substrate having first and second principal surfaces opposite each other; and a collector layer, a base layer, and an emitter layer stacked in this order on the first principal surface side of the semiconductor substrate. The collector layer includes a first semiconductor layer with metal particles dispersed therein, the metal particles each formed by a plurality of metal atoms bonded with each other.

公开(公告)号：US20180012979A1

公开(公告)日：2018-01-11

申请号：US15598456

申请日：2017-05-18

Applicant: MURATA MANUFACTURING CO., LTD.

Inventor： Yasunari UMEMOTO ,  Shigeki KOYA ,  Shigeru YOSHIDA ,  Isao OBU

IPC: H01L29/737 ,  H01L29/08

CPC classification number: H01L29/7371 ,  H01L29/0817 ,  H01L29/158 ,  H01L29/66242 ,  H01L29/66318

Abstract: A heterojunction bipolar transistor includes a collector layer, a base layer, an emitter layer, and a semiconductor layer that are laminated in this order, wherein the emitter layer includes a first region having an upper surface on which the semiconductor layer is laminated, and a second region being adjacent to the first region and having an upper surface that is exposed, and the first and second regions of the emitter layer have higher doping concentrations in portions near the upper surfaces than in portions near an interface between the emitter layer and the base layer.