公开(公告)号：US11610868B2

公开(公告)日：2023-03-21

申请号：US17039097

申请日：2020-09-30

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Peter Brick ,  Jean-Jacques Drolet ,  Hubert Halbritter ,  Laura Kreiner ,  Thomas Schwarz ,  Julia Stolz

IPC: H01L25/075 ,  H01L33/60 ,  H01L33/50 ,  H01L33/24 ,  H01L33/32

Abstract: The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

公开(公告)号：US20220406757A1

公开(公告)日：2022-12-22

申请号：US17638710

申请日：2020-08-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alexander F. Pfeuffer ,  Tobias Meyer ,  Korbinian Perzlmaier ,  Thomas Schwarz ,  Sebastian Hoibl

IPC: H01L25/075 ,  H01L33/00 ,  H01L33/62

Abstract: In an embodiment a method for producing radiation-emitting semiconductor chips includes providing a semiconductor wafer, applying first contact layers on the semiconductor wafer, applying a second dielectric layer on the semiconductor wafer and the first contact layers, attaching a carrier arrangement to the semiconductor wafer, singulating the semiconductor wafer into semiconductor bodies and applying second contact layers on the semiconductor bodies, wherein the second dielectric layer is formed such that it mechanically stabilizes itself.

公开(公告)号：US11107945B2

公开(公告)日：2021-08-31

申请号：US15820930

申请日：2017-11-22

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alexander Linkov ,  Frank Singer ,  Matthias Bruckschloegl ,  Siegfried Herrmann ,  Jürgen Moosburger ,  Thomas Schwarz

IPC: H01L33/00 ,  H01L25/075 ,  H01L33/48 ,  H01L33/38 ,  H01L33/62

Abstract: A component includes a light emitting semiconductor chip, wherein the semiconductor chip includes a layer arrangement including a plurality of layers, the p-conducting layer and the n-conducting layer adjoin one another in an active zone, a first electrical contact is configured on the p-conducting side of the layer arrangement at a first side of the semiconductor chip, a second electrical contact is configured on the n-conducting side of the layer arrangement at a second side of the semiconductor chip, the second side being situated opposite the first side of the semiconductor chip, the first side of the semiconductor chip transitions into the second side via an end side, the semiconductor chip is secured by the end side on a substrate, the substrate includes a first and second further electrical contact, and the further electrical contacts electrically conductively connect to the electrical contacts of the semiconductor chip.

公开(公告)号：US20190326269A1

公开(公告)日：2019-10-24

申请号：US16467480

申请日：2017-12-19

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Thomas Schwarz

IPC: H01L25/16 ,  H01L25/075 ,  H01L33/62 ,  H01L33/64 ,  G09F9/302

Abstract: A video- wall module is disclosed. In an embodiment a video-wall module includes a printed-circuit board, a plurality of light-emitting diode chips arranged at the printed-circuit board, a circuit chip fixed to the printed-circuit board, wherein the circuit chip is connected with electrical connections of the light-emitting diode chips in order to electrically actuate the light-emitting diode chips and a housing for the circuit chip at least partially formed by the printed circuit board, wherein the light-emitting diode chips are divided into a first area and a first edge area surrounding the first area, and wherein the light-emitting diode chips in the first area comprise a smaller radiation wavelength than the light-emitting diode chips in the first edge area on average at the same temperature.

公开(公告)号：US20190157339A1

公开(公告)日：2019-05-23

申请号：US16098283

申请日：2017-05-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Peter Brick ,  Matthias Sabathil ,  Frank Singer ,  Thomas Schwarz

IPC: H01L27/15 ,  H01L25/075 ,  H01L33/58 ,  H01L33/62

Abstract: An optical assembly and a display device are disclosed. In an embodiment an optical assembly includes a common carrier, a plurality of first chip groups, each first chip group comprising at least two similar luminescence diode chips, a plurality of second chip groups, each second chip group comprising at least two similar luminescence diode chips, wherein the first and second chip groups are arranged planar along a regular grid of first unit cells on a main surface of the common carrier and an optical element arranged downstream of the first and second chip groups with respect to a main radiation direction, wherein the luminescence diode chips of the different chip groups are configured to emit electromagnetic radiation of different wavelength characteristics.

公开(公告)号：US10205071B2

公开(公告)日：2019-02-12

申请号：US15577045

申请日：2016-05-19

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Thomas Schwarz ,  Andreas Biebersdorf ,  Dirk Becker ,  Bernd Barchmann ,  Björn Hoxhold ,  Philipp Schlosser ,  Andreas Waldschik

IPC: H01L33/60 ,  H01L33/62 ,  H01L25/075 ,  H01L33/48 ,  H01L33/64 ,  H01L33/00

Abstract: A method of producing optoelectronic semiconductor components includes providing a carrier with a carrier underside and a carrier top. The carrier has a metallic core material and at least on the carrier top a metal layer. A dielectric mirror is applied to the core material. At least two holes are formed through the carrier. A ceramic layer with a thickness of at most 150 μm at least on the carrier underside and in the holes is produced. The ceramic layer includes the core material as a component. Metallic contact layers are applied to at least subregions of the ceramic layer on the carrier underside and in the holes so that the carrier top electrically connects to the carrier underside through the holes. At least one radiation-emitting semiconductor chip is applied to the carrier top and the semiconductor chip is electronically bonded to the contact layers.

公开(公告)号：US20180219135A1

公开(公告)日：2018-08-02

申请号：US15747188

申请日：2016-07-14

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Christian Leirer ,  Thomas Schwarz ,  Lutz Höppel

IPC: H01L33/48 ,  H01L33/62 ,  H01L33/44 ,  H01L33/30

CPC classification number: H01L33/486 ,  H01L33/30 ,  H01L33/44 ,  H01L33/62 ,  H01L2224/11 ,  H01L2933/0025 ,  H01L2933/0066

Abstract: A component having a metal carrier and a method for producing a component are disclosed. In an embodiment the component includes a carrier having a metallic carrier layer, an insulating layer and a first through-contact extending in a vertical direction throughout the carrier layer, wherein the through-contact is electrically isolated from the carrier layer via the insulating layer. The component further includes a semiconductor body and a wiring structure arranged in the vertical direction between the carrier and the semiconductor body at least places and electrically contacting the semiconductor body, wherein the wiring structure has a first connection area and a second connection area, wherein the connection areas adjoin the carrier and are assigned to different electrical polarities of the component, wherein the first through-contact is in electrical contact with one of the connection areas, and wherein the component is configured to be externally electrically connectable via the carrier.

公开(公告)号：US09945526B2

公开(公告)日：2018-04-17

申请号：US14764032

申请日：2014-01-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Frank Singer ,  Thomas Schwarz

IPC: F21S8/10 ,  H01L25/075 ,  F21V29/70 ,  F21V23/00 ,  H01L33/62 ,  H01L33/64

CPC classification number: F21S41/143 ,  F21S41/192 ,  F21S45/47 ,  F21V23/002 ,  F21V29/70 ,  H01L25/0753 ,  H01L33/62 ,  H01L33/642 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48471 ,  H01L2224/49111 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/4554

Abstract: An optoelectronic lighting module (100) is provided having at least two optoelectronic semiconductor chips (10) with a radiation outlet surface (11) and an electrically non-conductive back side (12) facing away from the radiation outlet surface,—a cooling body (20) with a cooling body top side (21) and a cooling body bottom side (22) facing away from the cooling body top side (21),—two contact strips (30) with a contact top side (31) and a contact bottom side (32) facing away from the contact top side (31), wherein—the optoelectronic semiconductor chips (10) are arranged with the electrically non-conductive back side (12) on the cooling body top side (21),—each optoelectronic semiconductor chip (10) comprises two electric contact points (13) formed in the direction of the radiation outlet surface (11), and—the optoelectronic semiconductor chips (10) are connected in series via the electric contact points (13).

公开(公告)号：US09935250B2

公开(公告)日：2018-04-03

申请号：US14782698

申请日：2014-04-03

Applicant: OSRAM Opto Semiconductors Gmbh

Inventor： Frank Singer ,  Jürgen Moosburger ,  Thomas Schwarz

IPC: H01L33/62 ,  H01L33/48 ,  H01L33/50 ,  H01L33/54

CPC classification number: H01L33/62 ,  H01L33/486 ,  H01L33/502 ,  H01L33/54 ,  H01L2224/48091 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0066 ,  H01L2924/00012 ,  H01L2224/4554

Abstract: An optoelectronic component includes an optoelectronic semiconductor chip embodied as a volume emitter, wherein the optoelectronic semiconductor chip is embedded into an optically transparent molded body, a soldering contact is arranged at an underside of the molded body, a bonding wire forms an electrically conductive connection between an electrical contact area of the optoelectronic semiconductor chip and the soldering contact, and the bonding wire is embedded into the molded body.

公开(公告)号：US09837591B2

公开(公告)日：2017-12-05

申请号：US14888770

申请日：2014-05-05

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Thomas Schwarz ,  Frank Singer ,  Alexander Linkov ,  Stefan Illek ,  Wolfgang Mönch

IPC: H01L33/60 ,  H01L33/58 ,  H01L33/48 ,  H01L33/62 ,  H01L33/54 ,  H01L33/46 ,  H01L23/00 ,  H01L33/00 ,  H01L25/075

CPC classification number: H01L33/62 ,  H01L24/24 ,  H01L25/0753 ,  H01L33/0095 ,  H01L33/46 ,  H01L33/486 ,  H01L33/54 ,  H01L33/58 ,  H01L33/60 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/12035 ,  H01L2924/12041 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2924/00 ,  H01L2224/4554

Abstract: A radiation-emitting semiconductor device includes at least one semiconductor chip having a semiconductor layer sequence having an active region that produces radiation; a mounting surface on which at least one electrical contact for external contacting of the semiconductor chip is formed, wherein the mounting surface runs parallel to a main extension plane of the semiconductor layer sequence; a radiation exit surface running at an angle to or perpendicularly to the mounting surface; a radiation-guiding layer arranged in a beam path between the semiconductor chip and the radiation exit surface; and a reflector body adjacent to the radiation-guiding layer in regions and in a top view of the semiconductor device covers the semiconductor chip.