公开(公告)号：US10236337B2

公开(公告)日：2019-03-19

申请号：US15797107

申请日：2017-10-30

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： JinHee Jung ,  HyungSang Park ,  SungSoo Kim

IPC: H01L23/538 ,  H01L49/02 ,  H01L21/683 ,  H01L23/00 ,  H05K1/18 ,  H01L23/498 ,  H01L23/50 ,  H01L21/48 ,  H05K3/46

Abstract: A semiconductor device comprises a first conductive layer. A second conductive layer is formed over the first conductive layer. A semiconductor component is disposed over the first conductive layer. The second conductive layer lies in a plane between a top surface of the semiconductor component and a bottom surface of the semiconductor component. A third conductive layer is formed over the semiconductor component opposite the first conductive layer. The semiconductor device includes a symmetrical structure. A first insulating layer is formed between the first conductive layer and semiconductor component. A second insulating layer is formed between the semiconductor component and third conductive layer. A height of the first insulating layer between the first conductive layer and semiconductor component is between 90% and 110% of a height of the second insulating layer between the semiconductor component and third conductive layer. The semiconductor component includes a passive device.