公开(公告)号：US20240038891A1

公开(公告)日：2024-02-01

申请号：US18487275

申请日：2023-10-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong HEO ,  Sangwook KIM ,  Yunseong LEE ,  Sanghyun JO ,  Hyangsook LEE

IPC: H01L29/78 ,  H01L29/40 ,  H01L29/51

CPC classification number: H01L29/78391 ,  H01L29/401 ,  H01L29/516

Abstract: Provided are an electronic device and a method of manufacturing the same. The electronic device includes a ferroelectric crystallization layer between a substrate and a gate electrode and a crystallization prevention layer between the substrate and the ferroelectric crystallization layer. The ferroelectric crystallization layer is at least partially crystallized and includes a dielectric material having ferroelectricity or anti-ferroelectricity. Also, the crystallization prevention layer prevents crystallization in the ferroelectric crystallization layer from being spread toward the substrate.

公开(公告)号：US20230328999A1

公开(公告)日：2023-10-12

申请号：US18332972

申请日：2023-06-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong HEO ,  Yunseong LEE ,  Sanghyun JO

IPC: H10B51/30 ,  H01L29/78 ,  H01L29/66 ,  G11C11/22 ,  H01L21/28

CPC classification number: H10B51/30 ,  H01L29/78391 ,  H01L29/6684 ,  G11C11/223 ,  H01L29/40111 ,  G06N3/065

Abstract: Provided are an electronic device and a method of manufacturing the same. The electronic device may include a first device provided on a first region of a substrate; and a second device provided on a second region of the substrate, wherein the first device may include a first domain layer including a ferroelectric domain and a first gate electrode on the first domain layer, and the second device may include a second domain layer including a ferroelectric domain and a second gate electrode on the second domain layer. The first domain layer and the second domain layer may have different characteristics from each other at a polarization change according to an electric field. At the polarization change according to the electric field, the first domain layer may have substantially a non-hysteretic behavior characteristic and the second domain layer may have a hysteretic behavior characteristic.

公开(公告)号：US20230093076A1

公开(公告)日：2023-03-23

申请号：US17677654

申请日：2022-02-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hagyoul BAE ,  Seunggeol NAM ,  Jinseong HEO ,  Sanghyun JO ,  Dukhyun CHOE

IPC: H01L29/78 ,  H01L21/66 ,  H01L29/51 ,  H01L29/66

Abstract: Provided are a ferroelectric semiconductor device and a method of extracting a defect density of the same. A ferroelectric electronic device includes a first layer, an insulating layer including a ferroelectric layer and a first interface that is adjacent to the first layer, and an upper electrode over the insulating layer, wherein the insulating layer has a bulk defect density of 1016 cm−3eV−1 or more and an interface defect density of 1010 cm−2eV−1 or more.

公开(公告)号：US20210408255A1

公开(公告)日：2021-12-30

申请号：US17468098

申请日：2021-09-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taehwan MOON ,  Eunha LEE ,  Junghwa KIM ,  Hyangsook LEE ,  Sanghyun JO ,  Jinseong HEO

IPC: H01L29/423 ,  H01L21/28 ,  H01L21/02 ,  H01L27/108 ,  H01L49/02 ,  H01L29/51

Abstract: Provided are an electronic device including a dielectric layer having an adjusted crystal orientation and a method of manufacturing the electronic device. The electronic device includes a seed layer provided on a substrate and a dielectric layer provided on the seed layer. The seed layer includes crystal grains having aligned crystal orientations. The dielectric layer includes crystal grains having crystal orientations aligned in the same direction as the crystal orientations of the seed layer.

公开(公告)号：US20210313439A1

公开(公告)日：2021-10-07

申请号：US17119337

申请日：2020-12-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwanghee LEE ,  Sangwook KIM ,  Seunggeol NAM ,  Taehwan MOON ,  Yunseong LEE ,  Sanghyun JO ,  Jinseong HEO

IPC: H01L29/49 ,  H01L29/786 ,  H01L29/78 ,  H01L29/66 ,  H01L29/40

Abstract: Disclosed herein is an electronic device including: a lower gate electrode; a ferroelectric layer covering the lower gate electrode; a first insertion layer covering the ferroelectric layer and including a dielectric material; a channel layer provided on the first insertion layer, at a position corresponding to the lower gate electrode, the channel layer including an oxide semiconductor material; and a source electrode and a drain electrode formed to be electrically connected to both ends of the channel layer, respectively.

公开(公告)号：US20210098596A1

公开(公告)日：2021-04-01

申请号：US17036469

申请日：2020-09-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun JO ,  Jinseong HEO ,  Hyangsook LEE ,  Sangwook KIM ,  Yunseong LEE

IPC: H01L29/51 ,  H01L21/02 ,  H01L49/02

Abstract: Disclosed herein is a thin film structure, including a first conductive layer on a dielectric layer including a plurality of layers. Each of the plurality of layers includes a dopant layer containing a dopant A and a HfO2 layer to form a compound of HfxA1-xOz (0

公开(公告)号：US20200303385A1

公开(公告)日：2020-09-24

申请号：US16893888

申请日：2020-06-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong HEO ,  Yunseong LEE ,  Sanghyun JO

IPC: H01L27/1159 ,  H01L29/78 ,  H01L29/66 ,  G11C11/22 ,  H01L21/28

Abstract: Provided are an electronic device and a method of manufacturing the same. The electronic device may include a first device provided on a first region of a substrate; and a second device provided on a second region of the substrate, wherein the first device may include a first domain layer including a ferroelectric domain and a first gate electrode on the first domain layer, and the second device may include a second domain layer including a ferroelectric domain and a second gate electrode on the second domain layer. The first domain layer and the second domain layer may have different characteristics from each other at a polarization change according to an electric field. At the polarization change according to the electric field, the first domain layer may have substantially a non-hysteretic behavior characteristic and the second domain layer may have a hysteretic behavior characteristic.

公开(公告)号：US20200176610A1

公开(公告)日：2020-06-04

申请号：US16682380

申请日：2019-11-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yunseong LEE ,  Jinseong HEO ,  Sangwook KIM ,  Sanghyun JO

IPC: H01L29/78 ,  H01L29/51 ,  H01L29/423 ,  H01L29/08 ,  H01L21/02 ,  H01L29/66

Abstract: An electronic device includes a ferroelectric layer arranged on a channel region and a gate electrode arranged on the ferroelectric layer. The ferroelectric layer includes a plurality of first oxide monolayers and a second oxide monolayers that is arranged between the substrate and the gate electrode and include a material different from a material of the first oxide monolayers. The first oxide monolayers include oxide monolayers that are alternately formed and include materials different from one another.

公开(公告)号：US20190164754A1

公开(公告)日：2019-05-30

申请号：US16012938

申请日：2018-06-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Haeryong KIM ,  Hyeonjin SHIN ,  Jaeho LEE ,  Sanghyun JO

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/786 ,  H01L29/24

Abstract: A method of growing a two-dimensional transition metal dichalcogenide (TMD) thin film and a method of manufacturing a device including the two-dimensional TMD thin film are provided. The method of growing the two-dimensional TMD thin film may include a precursor supply operation and an evacuation operation, which are periodically and repeatedly performed in a reaction chamber provided with a substrate for thin film growth. The precursor supply operation may include supplying two or more kinds of precursors of a TMD material to the reaction chamber. The evacuation operation may include evacuating the two or more kinds of precursors and by-products generated therefrom from the reaction chamber.

公开(公告)号：US20190157491A1

公开(公告)日：2019-05-23

申请号：US15942659

申请日：2018-04-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun JO ,  Jaeho LEE ,  Haeryong KIM ,  Hyeonjin SHIN

IPC: H01L31/107 ,  H01L27/146 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/0352 ,  H01S5/0687 ,  G01S7/481 ,  G01S17/93

Abstract: A photodetector having a small form factor and having high detection efficiency with respect to both visible light and infrared rays may include a first electrode, a collector layer on the first electrode, a tunnel barrier layer on the collector layer, a graphene layer on the tunnel barrier layer, an emitter layer on the graphene layer, and a second electrode on the emitter layer. The photodetector may be included in an image sensor. An image sensor may include a substrate, an insulating layer on the substrate, and a plurality of photodetectors on the insulating layer. The photodetectors may be aligned with each other in a direction extending parallel or perpendicular to a top surface of the insulating layer. The photodetector may be included in a LiDAR system.