-
公开(公告)号：US09130014B2
公开(公告)日：2015-09-08
申请号：US14085811
申请日：2013-11-21
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Keng-Jen Lin , Yu-Ren Wang , Chien-Liang Lin , Tsuo-Wen Lu , Wei-Jen Chen , Chih-Chung Chen
IPC: H01L21/762 , H01L21/02
CPC classification number: H01L21/76237 , H01L21/02164 , H01L21/0217 , H01L21/0228 , H01L21/32105 , H01L21/76205 , H01L21/76224
Abstract: A method for fabricating shallow trench isolation structure is disclosed. The method includes the steps of: (a) providing a substrate; (b) forming a trench in the substrate; (c) forming a silicon layer in the trench; and (d) performing an oxidation process to partially transform a surface of the silicon layer into an oxide layer.
Abstract translation: 公开了一种用于制造浅沟槽隔离结构的方法。 该方法包括以下步骤：（a）提供衬底; （b）在衬底中形成沟槽; （c）在沟槽中形成硅层; 和（d）进行氧化处理以将硅层的表面部分地转变为氧化物层。
-
公开(公告)号：US12119272B2
公开(公告)日：2024-10-15
申请号：US18233331
申请日：2023-08-14
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Fu-Jung Chuang , Po-Jen Chuang , Yu-Ren Wang , Chi-Mao Hsu , Chia-Ming Kuo , Guan-Wei Huang , Chun-Hsien Lin
IPC: H01L21/00 , H01L21/762 , H01L21/8238 , H01L27/092
CPC classification number: H01L21/823878 , H01L21/76224 , H01L21/823821 , H01L27/0924
Abstract: A semiconductor device includes a fin-shaped structure on a substrate, a single diffusion break (SDB) structure in the fin-shaped structure to divide the first fin-shaped structure into a first portion and a second portion, and more than two gate structures on the SDB structure. Preferably, the more than two gate structures include a first gate structure, a second gate structure, a third gate structure, and a fourth gate structure disposed on the SDB structure.
-
公开(公告)号：US12046639B2
公开(公告)日：2024-07-23
申请号：US17683288
申请日：2022-02-28
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Yu-Ming Hsu , Yu-Chi Wang , Yen-Hsing Chen , Tsung-Mu Yang , Yu-Ren Wang
IPC: H01L29/15 , H01L29/778
CPC classification number: H01L29/151 , H01L29/7786
Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.
-
公开(公告)号：US11876122B2
公开(公告)日：2024-01-16
申请号：US17994375
申请日：2022-11-27
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Chia-Wei Chang , Chia-Ming Kuo , Po-Jen Chuang , Fu-Jung Chuang , Shao-Wei Wang , Yu-Ren Wang , Chia-Yuan Chang
CPC classification number: H01L29/4983 , H01L21/0234 , H01L21/02332 , H01L21/02521 , H01L21/28123 , H01L29/0847 , H01L29/24 , H01L29/66545 , H01L29/66795 , H01L29/7851
Abstract: A method of forming a semiconductor device. A substrate having a fin structure is provided. A dummy gate is formed on the fin structure. A polymer block is formed adjacent to a corner between the dummy gate and the fin structure. The polymer block is subjected to a nitrogen plasma treatment, thereby forming a nitridation layer in proximity to a sidewall of the dummy gate under the polymer block. After subjecting the polymer block to the nitrogen plasma treatment, a seal layer is formed on the sidewall of the dummy gate and on the polymer block. An epitaxial layer is then grown on a source/drain region of the fin structure. The dummy gate is then replaced with a metal gate.
-
公开(公告)号：US11791413B2
公开(公告)日：2023-10-17
申请号：US17392222
申请日：2021-08-02
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Shi-You Liu , Shih-Cheng Chen , Chia-Wei Chang , Chia-Ming Kuo , Tsai-Yu Wen , Yu-Ren Wang
CPC classification number: H01L29/7851 , H01L21/02126 , H01L23/10 , H01L29/0847 , H01L29/6656 , H01L29/66795
Abstract: A semiconductor device includes a fin protruding from a substrate and extending in a first direction, a gate structure extending on the fin in a second direction, and a seal layer located on the sidewall of the gate structure. A first peak carbon concentration is disposed in the seal layer. A first spacer layer is located on the seal layer. A second peak carbon concentration is disposed in the first spacer layer. A second spacer layer is located on the first spacer layer.
-
Patent Agency Ranking
公开(公告)号：US20230253457A1
公开(公告)日：2023-08-10
申请号：US18135203
申请日：2023-04-17
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Yu-Ming Hsu , Yu-Chi Wang , Yen-Hsing Chen , Tsung-Mu Yang , Yu-Ren Wang
IPC: H01L29/15 , H01L29/778
CPC classification number: H01L29/151 , H01L29/7786
Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.
-
公开(公告)号：US20230014253A1
公开(公告)日：2023-01-19
申请号：US17392222
申请日：2021-08-02
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Shi-You Liu , Shih-Cheng Chen , Chia-Wei Chang , Chia-Ming Kuo , Tsai-Yu Wen , Yu-Ren Wang
Abstract: A semiconductor device includes a fin protruding from a substrate and extending in a first direction, a gate structure extending on the fin in a second direction, and a seal layer located on the sidewall of the gate structure. A first peak carbon concentration is disposed in the seal layer. A first spacer layer is located on the seal layer. A second peak carbon concentration is disposed in the first spacer layer. A second spacer layer is located on the first spacer layer.
-
公开(公告)号：US11527448B2
公开(公告)日：2022-12-13
申请号：US17134465
申请日：2020-12-27
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Fu-Jung Chuang , Po-Jen Chuang , Yu-Ren Wang , Chi-Mao Hsu , Chia-Ming Kuo , Guan-Wei Huang , Chun-Hsien Lin
IPC: H01L21/00 , H01L21/8238 , H01L27/092 , H01L21/762
Abstract: A method for fabricating semiconductor device includes the steps of first providing a substrate having a fin-shaped structure thereon, forming a single diffusion break (SDB) structure in the substrate to divide the fin-shaped structure into a first portion and a second portion, and then forming more than one gate structures such as a first gate structure and a second gate structure on the SDB structure. Preferably, each of the first gate structure and the second gate structure overlaps the fin-shaped structure and the SDB structure.
-
公开(公告)号：US20220208694A1
公开(公告)日：2022-06-30
申请号：US17179422
申请日：2021-02-19
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Yen-Hsing Chen , Yu-Ming Hsu , Tsung-Mu Yang , Yu-Ren Wang
Abstract: A semiconductor structure includes a substrate including a device region, a peripheral region surrounding the device region, and a transition region disposed between the device region and the peripheral region. An epitaxial layer is disposed on the device region, the peripheral region, and the transition region. A first portion of the epitaxial layer on the peripheral region has a poly-crystal structure.
-
公开(公告)号：US20210249528A1
公开(公告)日：2021-08-12
申请号：US16843851
申请日：2020-04-08
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Yu-Ming Hsu , Yen-Hsing Chen , Tsung-Mu Yang , Yu-Ren Wang
IPC: H01L29/778 , H01L29/16 , H01L29/20 , H01L29/66
Abstract: A high electron mobility transistor (HEMT) includes a substrate, a P-type III-V composition layer, a gate electrode and a carbon containing layer. The P-type III-V composition layer is disposed on the substrate, and the gate electrode is disposed on the P-type III-V composition layer. The carbon containing layer is disposed under the P-type III-V composition layer to function like an out diffusion barrier for preventing from the dopant within the P-type III-V composition layer diffusing into the stacked layers underneath during the annealing process.
-
-
-
-
-
-
-
-
-
Search Results
150
records
(took 0.021 seconds)
