公开(公告)号：US09981843B2

公开(公告)日：2018-05-29

申请号：US15138313

申请日：2016-04-26

Applicant: Infineon Technologies AG

Inventor： Dominic Maier ,  Alfons Dehe ,  Thomas Kilger ,  Markus Menath ,  Franz Xaver Muehlbauer ,  Daniel Porwol ,  Juergen Wagner

IPC: H01L29/84 ,  B81C1/00

CPC classification number: B81C1/00896 ,  B81C1/00269 ,  B81C1/00801 ,  B81C2201/0194 ,  B81C2201/053

Abstract: A method of producing a chip package is described. A plurality of chips is provided on a first wafer. Each chip has a cavity which opens to a first main face of the chip. The cavities are filled or covered temporarily. The chips are then singulated. The singulated chips are embedded in an encapsulation material, and then the cavities are re-exposed.

公开(公告)号：US09908775B2

公开(公告)日：2018-03-06

申请号：US15529619

申请日：2015-04-01

Applicant: Goertek. Inc

Inventor： Quanbo Zou ,  Zhe Wang

IPC: B81C1/00 ,  H01L25/00

CPC classification number: B81C1/00896 ,  B81C2201/0194 ,  B81C2203/01 ,  B81C2203/0127 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/97 ,  H01L25/50 ,  H01L2224/11312 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/81005 ,  H01L2224/97 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2224/81

Abstract: A transfer method, manufacturing method, device and electronic apparatus of MEMS. The method for MEMS transfer, comprising: depositing a laser-absorbing layer on a first surface of a laser-transparent carrier; forming a MEMS structure on the laser-absorbing layer; attaching the MEMS structure to a receiver; and performing a laser lift-off from the side of the carrier, to remove the carrier. A transfer of high-quality MEMS structure can be achieved in a simple, low cost manner.

公开(公告)号：US09624096B2

公开(公告)日：2017-04-18

申请号：US14454370

申请日：2014-08-07

Applicant: QUALCOMM Incorporated

Inventor： Michael A. Stuber

IPC: H01L29/00 ,  B81C1/00 ,  B81B7/00 ,  H01L21/20 ,  H01L21/768 ,  H01L21/84 ,  H01L23/48 ,  H01L29/78 ,  H01L27/12 ,  H01L21/762

CPC classification number: B81C1/00158 ,  B81B3/0021 ,  B81B7/008 ,  B81B2203/0127 ,  B81C1/00269 ,  B81C2201/0194 ,  B81C2203/037 ,  H01L21/2007 ,  H01L21/76256 ,  H01L21/76898 ,  H01L21/7806 ,  H01L21/84 ,  H01L23/481 ,  H01L25/00 ,  H01L27/1203 ,  H01L29/7803 ,  H01L2924/0002 ,  H01L2924/1461 ,  H01L2224/9202 ,  H01L2924/00

Abstract: A semiconductor wafer is formed with a first device layer having active devices. A handle wafer having a trap rich layer is bonded to a top surface of the semiconductor wafer. A second device layer having a MEMS device or acoustic filter device is formed on a bottom surface of the semiconductor wafer. The second device layer is formed either by monolithic fabrication processes or layer-transfer processes.

公开(公告)号：US09595274B2

公开(公告)日：2017-03-14

申请号：US14811303

申请日：2015-07-28

Applicant: Seagate Technology LLC

Inventor： Mark Anthony Gubbins ,  Marcus Benedict Mooney

IPC: G11B5/31 ,  B81C1/00 ,  B81C3/00 ,  B81C99/00 ,  C30B25/04 ,  G03F7/00 ,  C23F1/02 ,  C09K13/08 ,  C23F1/28 ,  C23F1/30

CPC classification number: G11B5/3153 ,  B81C1/00357 ,  B81C1/00476 ,  B81C1/0088 ,  B81C3/001 ,  B81C99/008 ,  B81C2201/0194 ,  C09K13/08 ,  C23F1/02 ,  C23F1/28 ,  C23F1/30 ,  C30B25/04 ,  G03F7/0002 ,  G11B5/3163 ,  G11B5/3173 ,  Y10T428/11 ,  Y10T428/115 ,  Y10T428/1157 ,  Y10T428/1171 ,  Y10T428/1186 ,  Y10T428/1193

Abstract: Various methods for attaching a crystalline write pole onto an amorphous substrate and the resulting structures are described in detail herein. Further, the resulting structure may have a magnetic moment exceeding 2.4 Tesla. Still further, methods for depositing an epitaxial crystalline write pole on a crystalline seed or template material to ensure that the phase of the write pole is consistent with the high moment phase of the template material are also described in detail herein.

Abstract translation: 本文详细描述了用于将晶体写极连接到非晶衬底上的各种方法以及所得到的结构。 此外，所得到的结构可能具有超过2.4特斯拉的磁矩。 此外，本文还详细描述了在结晶晶种或模板材料上沉积外延晶体写极的方法，以确保写极的相位与模板材料的高时间相一致。

公开(公告)号：US09391423B2

公开(公告)日：2016-07-12

申请号：US14541071

申请日：2014-11-13

Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY

Inventor： Vladimir Bulovic ,  Jeffrey Hastings Lang ,  Apoorva Murarka ,  Annie I-Jen Wang ,  Wendi Chang

IPC: H01L29/84 ,  G01L11/02 ,  H01S3/106 ,  H01S3/0933 ,  H01S3/0941 ,  H01S3/07 ,  H01S3/08 ,  H01S3/16 ,  H01S3/13 ,  H01S3/105 ,  G02B26/00 ,  G01L9/00 ,  B81C1/00

CPC classification number: H01S3/1053 ,  B81B2201/02 ,  B81B2201/042 ,  B81C1/00158 ,  B81C1/00634 ,  B81C2201/0194 ,  G01L1/24 ,  G01L9/0005 ,  G01L9/0072 ,  G01L11/02 ,  G02B26/001 ,  H01L29/84 ,  H01S3/07 ,  H01S3/08059 ,  H01S3/0933 ,  H01S3/094 ,  H01S3/0941 ,  H01S3/106 ,  H01S3/1305 ,  H01S3/16 ,  H01S3/1693

Abstract: The disclosure relates to method and apparatus for micro-contact printing of micro-electromechanical systems (“MEMS”) in a solvent-free environment. The disclosed embodiments enable forming a composite membrane over a parylene layer and transferring the composite structure to a receiving structure to form one or more microcavities covered by the composite membrane. The parylene film may have a thickness in the range of about 100 nm-2 microns; 100 nm-1 micron, 200-300 nm, 300-500 nm, 500 nm to 1 micron and 1-30 microns. Next, one or more secondary layers are formed over the parylene to create a composite membrane. The composite membrane may have a thickness of about 100 nm to 700 nm to several microns. The composite membrane's deflection in response to external forces can be measured to provide a contact-less detector. Conversely, the composite membrane may be actuated using an external bias to cause deflection commensurate with the applied bias. Applications of the disclosed embodiments include tunable lasers, microphones, microspeakers, remotely-activated contact-less pressure sensors and the like.

Abstract translation: 本公开涉及在无溶剂环境中微机电系统（“MEMS”）的微接触印刷的方法和装置。 所公开的实施方案使得能够在聚对二甲苯层上形成复合膜并将复合结构转移到接收结构以形成由复合膜覆盖的一个或多个微腔。 聚对二甲苯膜的厚度可以在约100nm-2微米的范围内; 200nm-1微米，200-300nm，300-500nm，500nm至1微米和1-30微米。 接下来，在聚对二甲苯之上形成一个或多个二次层以产生复合膜。 复合膜可以具有约100nm至700nm至几微米的厚度。 可以测量复合膜的响应于外力的偏转以提供无接触检测器。 相反，可以使用外部偏压来致动复合膜，以产生与施加的偏压相称的偏转。 所公开的实施例的应用包括可调激光器，麦克风，微型扬声器，远程激活的无接触压力传感器等。

公开(公告)号：US20160046127A1

公开(公告)日：2016-02-18

申请号：US14926567

申请日：2015-10-29

Applicant: NLT Technologies, Ltd.

Inventor： Shigeru MORI ,  Setsuo KANEKO ,  Hideki ASADA

IPC: B41J2/16

CPC classification number: B41J2/1601 ,  B41J2/0455 ,  B41J2/0458 ,  B41J2/14016 ,  B41J2/14129 ,  B41J2/1626 ,  B41J2/1634 ,  B41J2002/14387 ,  B81C1/00357 ,  B81C1/00817 ,  B81C2201/0194 ,  C09K13/00

Abstract: Provided are a manufacturing method of an inkjet print head, the inkjet print head and a drawing apparatus equipped with the inkjet print head. The manufacturing method includes: forming a separation assisting layer on a substrate; forming heating resistors, thin-film transistors and nozzles for ejecting liquid, on the separation assisting layer; separating the separation assisting layer from the substrate; forming a first heat-conductive layer on the opposite surface of the separation assisting layer from the nozzles; and forming an ink supply port for supplying ink to the nozzles from a first heat-conductive layer side of the inkjet print head.

Abstract translation: 提供了一种喷墨打印头，喷墨打印头和装备有喷墨打印头的绘图装置的制造方法。 该制造方法包括：在基板上形成分离辅助层; 在分离辅助层上形成用于喷射液体的加热电阻器，薄膜晶体管和喷嘴; 从所述基板分离所述分离辅助层; 在分离辅助层的相对表面上与喷嘴形成第一导热层; 以及形成用于从喷墨打印头的第一导热层侧向喷嘴供墨的供墨口。

公开(公告)号：US09153548B2

公开(公告)日：2015-10-06

申请号：US14027875

申请日：2013-09-16

Applicant: LuxVue Technology Corporation

Inventor： Clayton Ka Tsun Chan ,  Andreas Bibl

IPC: H01L27/15 ,  H01L23/00 ,  H01L25/075 ,  H01L33/00

CPC classification number: H01L24/00 ,  B81C1/00873 ,  B81C2201/0194 ,  H01L21/6835 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0753 ,  H01L27/156 ,  H01L33/0079 ,  H01L2221/68368 ,  H01L2224/0345 ,  H01L2224/03848 ,  H01L2224/04026 ,  H01L2224/05016 ,  H01L2224/05023 ,  H01L2224/05083 ,  H01L2224/05117 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/0519 ,  H01L2224/05562 ,  H01L2224/05564 ,  H01L2224/05568 ,  H01L2224/05638 ,  H01L2224/05644 ,  H01L2224/05669 ,  H01L2224/05688 ,  H01L2224/06181 ,  H01L2224/2745 ,  H01L2224/29005 ,  H01L2224/29007 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/32145 ,  H01L2224/32227 ,  H01L2224/83005 ,  H01L2224/83409 ,  H01L2224/83411 ,  H01L2224/83444 ,  H01L2224/83815 ,  H01L2224/83825 ,  H01L2224/8383 ,  H01L2224/9212 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1421 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01079 ,  H01L2924/01032 ,  H01L2924/01028 ,  H01L2924/0781 ,  H01L2224/034 ,  H01L2224/274 ,  H01L2924/014 ,  H01L2224/83

Abstract: A method and structure for forming an array of micro devices is disclosed. An array of micro devices is formed over an array of stabilization posts included in a stabilization layer. Patterned sacrificial spacers are formed between the stabilization posts and between the micro devices. The patterned sacrificial spacers are disposed upon the patterned sacrificial spacers.

Abstract translation: 公开了一种用于形成微器件阵列的方法和结构。 在包括在稳定层中的稳定柱的阵列上形成微器件阵列。 图案化的牺牲间隔物形成在稳定柱之间和微型器件之间。 图案化的牺牲隔离物设置在图案化的牺牲间隔物上。

公开(公告)号：US09138973B1

公开(公告)日：2015-09-22

申请号：US14251775

申请日：2014-04-14

Applicant: Tsinghua University ,  HON HAI PRECISION INDUSTRY CO., LTD.

Inventor： Yu-Jun He ,  Dong-Qi Li ,  Tian-Yi Li ,  Yang Wei ,  Kai-Li Jiang ,  Shou-Shan Fan

IPC: H01L21/20 ,  H01L21/36 ,  H01L21/30 ,  B05D1/18 ,  B29C65/00 ,  B32B37/00 ,  B32B37/12 ,  B32B37/30 ,  B32B38/08

CPC classification number: B32B37/025 ,  B32B37/12 ,  B32B37/30 ,  B32B38/08 ,  B32B38/10 ,  B32B2305/22 ,  B32B2309/16 ,  B32B2309/66 ,  B32B2311/04 ,  B32B2311/18 ,  B32B2311/24 ,  B32B2333/12 ,  B81B2207/056 ,  B81C1/00031 ,  B81C2201/0191 ,  B81C2201/0194 ,  B82B3/0014 ,  B82B3/0076

Abstract: A method for transferring nanostructures includes providing a growth substrate and a number of nanostructures located on the growth substrate. The nanostructures are transferred by an adhesive layer from the growth substrate to a target substrate. The nanostructures are between the target substrate and the adhesive layer, and at least partial of nanostructures is in contact with a surface of the target substrate. The adhesive layer is covered by a metal layer. The adhesive layer together with the metal layer is separated from the nanostructures and the target substrate in an organic solvent by an external force, wherein the organic solvent permeates into an interface between the adhesive layer and the nanostructures.

Abstract translation: 转移纳米结构的方法包括提供生长衬底和位于生长衬底上的许多纳米结构。 纳米结构通过粘合剂层从生长衬底转移到目标衬底。 纳米结构位于目标基底和粘合剂层之间，并且至少部分纳米结构与目标基底的表面接触。 粘合剂层被金属层覆盖。 粘合剂层与金属层一起通过外力与有机溶剂中的纳米结构和靶基材分离，其中有机溶剂渗入粘合剂层和纳米结构之间的界面。

公开(公告)号：US08946052B2

公开(公告)日：2015-02-03

申请号：US13627425

申请日：2012-09-26

Applicant: Sandia Corporation

Inventor： Gregory N. Nielson ,  Carlos Anthony Sanchez ,  Anna Tauke-Pedretti ,  Bongsang Kim ,  Jeffrey Cederberg ,  Murat Okandan ,  Jose Luis Cruz-Campa ,  Paul J. Resnick

IPC: H01L21/46 ,  H01L21/00

CPC classification number: H01L25/50 ,  B81C1/00373 ,  B81C2201/0194 ,  H01L21/283 ,  H01L21/31111 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/6836 ,  H01L24/13 ,  H01L24/80 ,  H01L24/97 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2221/68354 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2224/0401 ,  H01L2224/08145 ,  H01L2224/13005 ,  H01L2224/131 ,  H01L2224/14135 ,  H01L2224/80006 ,  H01L2224/80896 ,  H01L2224/9202 ,  H01L2224/97 ,  H01L2225/06517 ,  H01L2225/06568 ,  H01L2224/11 ,  H01L2224/80001 ,  H01L2924/00012 ,  H01L2924/014

Abstract: A method includes forming a release layer over a donor substrate. A plurality of devices made of a first semiconductor material are formed over the release layer. A first dielectric layer is formed over the plurality of devices such that all exposed surfaces of the plurality of devices are covered by the first dielectric layer. The plurality of devices are chemically attached to a receiving device made of a second semiconductor material different than the first semiconductor material, the receiving device having a receiving substrate attached to a surface of the receiving device opposite the plurality of devices. The release layer is etched to release the donor substrate from the plurality of devices. A second dielectric layer is applied over the plurality of devices and the receiving device to mechanically attach the plurality of devices to the receiving device.

Abstract translation: 一种方法包括在供体基底上形成释放层。 在剥离层上形成由第一半导体材料制成的多个器件。 在多个器件上形成第一介电层，使得多个器件的所有暴露表面被第一介电层覆盖。 所述多个装置化学地附接到由不同于第一半导体材料的第二半导体材料制成的接收装置，所述接收装置具有附接到与所述多个装置相对的所述接收装置的表面的接收基板。 蚀刻释放层以从多个装置释放施主衬底。 在多个装置和接收装置上施加第二介电层以将多个装置机械地附接到接收装置。

公开(公告)号：US20140054732A1

公开(公告)日：2014-02-27

申请号：US13604613

申请日：2012-09-05

Applicant: Apoorva MURARKA ,  Vladimir BULOVIC ,  Sarah PAYDAVOSI

Inventor： Apoorva MURARKA ,  Vladimir BULOVIC ,  Sarah PAYDAVOSI

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81B3/0021 ,  B81B2203/0127 ,  B81C1/00158 ,  B81C1/00492 ,  B81C2201/0194

Abstract: The disclosure provides methods and apparatus for release-assisted microcontact printing of MEMS. Specifically, the principles disclosed herein enable patterning diaphragms and conductive membranes on a substrate having articulations of desired shapes and sizes. Such diaphragms deflect under applied pressure or force (e.g., electrostatic, electromagnetic, acoustic, pneumatic, mechanical, etc.) generating a responsive signal. Alternatively, the diaphragm can be made to deflect in response to an external bias to measure the external bias/phenomenon. The disclosed principles enable transferring diaphragms and/or thin membranes without rupturing.

Abstract translation: 本公开提供了用于MEMS的释放辅助微接触印刷的方法和装置。 具体来说，本文公开的原理使得能够在具有所需形状和尺寸的关节的基底上形成膜片和导电膜。 这种隔膜在施加的压力或力（例如，静电，电磁，声学，气动，机械等）下偏转，产生响应信号。 或者，可以使隔膜响应于外部偏置而偏转以测量外部偏置/现象。 所公开的原理使得能够在不破裂的情况下传送膜片和/或薄膜。