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公开(公告)号:US11946741B2
公开(公告)日:2024-04-02
申请号:US17605692
申请日:2020-05-07
Applicant: SILMACH
Inventor: Marc Sworowski , Charles Haye
CPC classification number: G01B7/18 , B81B3/0086 , B81B2201/02 , B81B2203/04
Abstract: The present invention relates to a MEMS deformation sensor for measuring a relative movement between two regions of a structure, the sensor comprising: —a first portion (2) and a second portion (3) that are movable with respect to one another along a direction of measurement (X); —a thrust element (4) mounted fixed with respect to the first portion; —a first electrode (A) and a second electrode (B) that are capable of being raised to different electrical potentials, each mounted fixed with respect to the second portion; —a connecting portion (I) forming an electrical link between the first electrode and the second electrode, the thrust element applying a load to the connecting portion when the first portion moves with respect to the second portion along the direction of measurement beyond a predetermined distance, the electrical link being broken under the effect of the load.
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公开(公告)号:US11835338B2
公开(公告)日:2023-12-05
申请号:US16479442
申请日:2018-01-22
Applicant: KYOCERA Corporation
Inventor: Munetaka Soejima
IPC: G01C19/5621 , G01C19/5656 , B81B3/00 , H10N30/03 , H10N30/30
CPC classification number: G01C19/5621 , B81B3/0018 , H10N30/03 , H10N30/302 , B81B2201/02
Abstract: A sensor element includes a piezoelectric body, a plurality of excitation electrodes, and a plurality of detecting electrodes. The piezoelectric body includes a frame and a driving arm and detecting arm which extend from the frame within a predetermined plane parallel to an xy plane in an orthogonal coordinate system xyz. The excitation electrodes are located on the driving arm. The detecting electrodes are located on the detecting arm enabling detection of a signal generated by bending deformation of the detecting arm in a z-axis direction. The detecting arm includes first and second arms. The first arm extends from the frame in the predetermined plane. The second arm extends from a front end side of the first arm toward a frame side within the predetermined plane. An end part of the second arm on the frame side is formed as a free end.
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公开(公告)号:US20230251621A1
公开(公告)日:2023-08-10
申请号:US18301002
申请日:2023-04-14
Applicant: STMicroelectronics S.r.l.
Inventor: Luca FONTANELLA , Andrea LABOMBARDA , Marco BIANCO , Davide GHEZZI , Christian RAINERI , Paolo GATTI
IPC: G05B19/406 , G05B23/02
CPC classification number: G05B19/406 , G05B23/0218 , B81B2201/02 , B81B2201/0228 , B81B2201/0264 , B81B2201/0278 , B81B2207/01 , G05B2219/34351
Abstract: A system for detecting and evaluating environmental quantities and events is formed by a detection and evaluation device and a mobile phone, connected through a wireless connection. The device is enclosed in a containment casing housing a support carrying a plurality of inertial sensors and environmental sensors. A processing unit is coupled to the inertial sensors and to the environmental sensors. A wireless connection unit, is coupled to the processing unit and a wired connection port, is coupled to the processing unit. A programming connector is coupled to the processing unit and is configured to couple to an external programming unit to receive programming instructions of the processing unit. A storage structure is coupled to the processing unit and a power-supply unit supplied power in the detection and evaluation device. The mobile phone stores an application, which enables a basicuse mode, an expert use mode, and an advanced use mode.
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公开(公告)号:US11661334B2
公开(公告)日:2023-05-30
申请号:US17644511
申请日:2021-12-15
Applicant: Apple Inc.
Inventor: Eddie L. Ng
CPC classification number: B81B7/008 , H04R19/04 , B81B2201/02 , B81B2201/0257 , B81B2201/0285 , H04R2201/003
Abstract: Disclosed herein is a MEMS ASIC. In some examples, the MEMS ASIC can include a MEMS, an analog front end (AFE) amplifier, an analog-to-digital converter (ADC), an overload detector, and a high-ohmic (HO) block. The HO block and the MEMS can form a high-pass filter (HPF). The impedance of the HO block can be related to the DC operating level of the AFE amplifier and the cutoff frequency of the HPF. In some examples, an overload event can occur, and the overload detector can be configured to adjust the impedance of the HO block to reduce the settling time of the MEMS ASIC. Methods of using the MEMS ASIC to reduce the settling time of the MEMS ASIC due to an overload event are disclosed herein.
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公开(公告)号:US20180286380A1
公开(公告)日:2018-10-04
申请号:US15995015
申请日:2018-05-31
Applicant: FUJIFILM SonoSite, inc.
Inventor: Wei Li , Paul Dunham , Chak-Yoon Aw , N. Chris Chaggares
CPC classification number: G10K11/30 , B06B1/0292 , B06B1/0611 , B81B3/0021 , B81B2201/02 , G01N29/06 , G01N29/221 , G01N29/2406 , G01N29/2437 , G01N29/28 , G10K11/168 , H01L41/0825
Abstract: Matching layers configured for use with ultrasound transducers are disclosed herein. In one embodiment, a transducer stack can include a capacitive micromachined ultrasound transducer (CMUT), an acoustic lens, and a matching layer therebetween. The matching layer can be made from a compliant material (e.g. an elastomer and/or an liquid) and configured for use with CMUTs. The matching layer can include a bottom surface overlying a top surface of the transducer and a top surface underlying a bottom surface of the lens.
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公开(公告)号:US20180202958A1
公开(公告)日:2018-07-19
申请号:US15763294
申请日:2016-09-19
Applicant: AMS Sensors UK Limited
Inventor: Syed Zeeshan ALI , Matthew GOVETT , Simon Jonathan STACEY
IPC: G01N27/12 , G01N27/22 , G01N27/414
CPC classification number: G01N27/128 , B81B2201/02 , G01N27/22 , G01N27/414
Abstract: Disclosed herein is a gas sensing device comprising a dielectric membrane formed on a semiconductor substrate comprising a bulk-etched cavity portion, a heater located within or over the dielectric membrane, a material for sensing a gas which is located on one side of the membrane, a support structure located near the material, and a gas permeable region coupled to the support structure so as to protect the material.
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公开(公告)号:US09975755B2
公开(公告)日:2018-05-22
申请号:US15455450
申请日:2017-03-10
Inventor: Anne Ghis , Marc Delaunay
CPC classification number: B81B3/0089 , B81B3/0075 , B81B2201/02 , B81B2201/0264 , B81B2201/03 , B81B2201/06 , B81B2203/0127 , B81B2207/115 , B81C1/00158
Abstract: A microelectromechanical system includes a membrane of amorphous carbon having a thickness between 1 nm and 50 nm, and for example between 3 nm and 20 nm.
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公开(公告)号:US20170363694A1
公开(公告)日:2017-12-21
申请号:US15534702
申请日:2015-12-02
Applicant: MOTION ENGINE INC.
Inventor: Robert Mark Boysel
IPC: G01R33/028 , G01R33/02
CPC classification number: G01R33/0286 , B81B2201/02 , G01R33/0206
Abstract: A micro-electro-mechanical system (MEMS) magnetometer is provided for measuring magnetic field components along three orthogonal axes. The MEMS magnetometer includes a top cap wafer, a bottom cap wafer and a MEMS wafer having opposed top and bottom sides bonded respectively to the top and bottom cap wafers. The MEMS wafer includes a frame structure and current-carrying first, second and third magnetic field transducers. The top cap, bottom cap and MEMS wafer are electrically conductive and stacked along the third axis. The top cap wafer, bottom cap wafer and frame structure together form one or more cavities enclosing the magnetic field transducers. The MEMS magnetometer further includes first, second and third electrode assemblies, the first and second electrode assemblies being formed in the top and/or bottom cap wafers. Each electrode assembly is configured to sense an output of a respective magnetic field transducer induced by a respective magnetic field component.
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公开(公告)号:US20170260041A1
公开(公告)日:2017-09-14
申请号:US15455450
申请日:2017-03-10
Inventor: Anne GHIS , Marc DELAUNAY
IPC: B81B3/00
CPC classification number: B81B3/0089 , B81B3/0075 , B81B2201/02 , B81B2201/0264 , B81B2201/03 , B81B2201/06 , B81B2203/0127 , B81B2207/115 , B81C1/00158
Abstract: A microelectromechanical system includes a membrane of amorphous carbon having a thickness between 1 nm and 50 nm, and for example between 3 nm and 20 nm.
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公开(公告)号:US09502023B2
公开(公告)日:2016-11-22
申请号:US14205123
申请日:2014-03-11
Applicant: FUJIFILM Sonosite, Inc.
Inventor: Wei Li , Paul Dunham , Chak-Yoon Aw , N. Chris Chaggares
CPC classification number: G10K11/30 , B06B1/0292 , B06B1/0611 , B81B3/0021 , B81B2201/02 , G01N29/06 , G01N29/221 , G01N29/2406 , G01N29/2437 , G01N29/28 , G10K11/168 , H01L41/0825
Abstract: Matching layers configured for use with ultrasound transducers are disclosed herein. In one embodiment, a transducer stack can include a capacitive micromachined ultrasound transducer (CMUT), an acoustic lens, and a matching layer therebetween. The matching layer can be made from a compliant material (e.g. an elastomer and/or an liquid) and configured for use with CMUTs. The matching layer can include a bottom surface overlying a top surface of the transducer and a top surface underlying a bottom surface of the lens.
Abstract translation: 本文公开了配置用于超声换能器的匹配层。 在一个实施例中,换能器堆叠可以包括电容式微加工超声换能器(CMUT),声透镜及其间的匹配层。 匹配层可以由顺应性材料(例如弹性体和/或液体)制成并配置成与CMUT一起使用。 匹配层可以包括覆盖换能器的顶表面的底表面和位于透镜底表面下方的顶表面。
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