Abstract:
The present invention provides a method of manufacturing MEMS devices, comprising the steps of forming MEMS device bodies in a first substrate, defining concave portions around the MEMS device bodies over the first substrate, forming convex portions coincident with the concave portions in a second substrate, fitting the convex portions in the concave portions, respectively, to join the first substrate and the second substrate to each other, thereby forming a third substrate, sticking the third substrate to a UV sheet on the second substrate side, and dicing the third substrate to separate the MEMS device bodies from one another.
Abstract:
A tilt sensor capable of measuring a tilt angle by utilizing piezoresistive effect without selectively etching a substrate having piezoresistors formed therein, wherein the backside of the silicon substrate 1 having piezoresistors R1 to R4 formed therein is uniformly ground to a deflectable thickness, both ends of the silicon substrate 1 are supported by a support member 2, and a weight member 3 is provided at the center of the silicon substrate 1 through a convex portion 3a.
Abstract:
A micromechanical structure is described which is disposed on a base body and requires protection from environmental influences by a covering body. Furthermore, electrical contacts are necessary for establishing contacts for the micromechanical structure. By skillfully carrying out a sawing-into operation and a sawing-through operation, it is possible to expose the electrical contact.
Abstract:
The present invention provides a micro inertia sensor and a method of manufacturing the same, the micro inertia sensor includes a lower glass substrate; a lower silicon including a first border, a first fixed point and a side movement sensing structure; an upper silicon including a second border, a second fixed point being connected to a via hole, in which a metal wiring is formed, on an upper side, and an sensing electrode, which correspond to the first border, the first fixed point and the side movement sensing structure; a bonded layer by a eutectic bonding between the upper silicon and the lower silicon; and a upper glass substrate, being positioned on an upper portion of the upper silicon, for providing the via hole on which an electric conduction wiring is formed, thereby aiming at the miniaturization of the product and the simplification of the process.
Abstract:
A capacitive acceleration sensor includes a non-single-crystal-silicon-based substrate, a polysilicon beam structure having a movable section that includes a movable electrode, a polysilicon supporter positioned on the non-single-crystal-silicon-based substrate for fixing the beam structure and forming a distance between the beam structure and the non-single-crystal-silicon-based substrate, a stationary electrode positioned on the non-single-crystal-silicon-based substrate and opposite to the movable section of the beam structure, and a thin film transistor (TFT) control circuit positioned on the non-single-crystal-silicon-based substrate. The stationary electrode and the movable electrode constitute a plate capacitor, and the TFT control circuit is electrically connected to the plate capacitor.
Abstract:
An epitaxial growth layer, an oxide film, and a passivation film are formed on a silicon substrate. Except for an opening formed on a part of the passivation film, the upper surface of the passivation film is covered with a metal protective film made of tungsten (W). With the silicon substrate immersed in a high-concentration hydrofluoric aqueous solution, anodization is performed with the silicon substrate as an anode and the metal protective film as a counter electrode.
Abstract:
A sensor formed from a semiconductor material. The device comprises a support frame, a sensing element; and means for vibrating the sensing element at a frequency corresponding generally to a first resonant frequency vibration mode. Error detection means detects the resonant frequency vibration mode, the output of the error detection means being indicative of existence or otherwise an expected response of the resonant frequency vibration mode to the excitation. Means for detecting the deformation of the sensing element provides an output indicative of the parameter to be sensed, the deformation detecting means and error detection means being formed from the same elements.
Abstract:
An acceleration sensor is disclosed which includes a capacitance-type acceleration detection element mounted on a ceramic base plate. The element comprises a movable electrode mounted between a pair of fixed electrodes. Acceleration of the sensor in a measurement direction causes the movable electrode to move relative to the fixed electrodes and the element has opposite ends in a direction perpendicular to the measurement direction. The acceleration detection element is mounted on the base at a first one of the opposite ends. Accordingly, the mounting surface of the acceleration sensor is parallel to the direction of acceleration to be detected. Thus the acceleration sensor can be surface-mounted on a printed board, and more be easily mounted in an automobile air bag control system or the like.
Abstract:
An acceleration sensor is disclosed which includes a capacitance-type acceleration detection element mounted on a ceramic base plate. The element comprises a movable electrode mounted between a pair of fixed electrodes. Acceleration of the sensor in a measurement direction causes the movable electrode to move relative to the fixed electrodes and the element has opposite ends in a direction perpendicular to the measurement direction. The acceleration detection element is mounted on the base at a first one of the opposite ends. Accordingly, the mounting surface of the acceleration sensor is parallel to the direction of acceleration to be detected. Thus the acceleration sensor can be surface-mounted on a printed board, and more be easily mounted in an automobile air bag control system or the like.