公开(公告)号：US08680480B2

公开(公告)日：2014-03-25

申请号：US13889278

申请日：2013-05-07

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Jiong Chen

IPC: G21K1/08

CPC classification number: H01J37/32669 ,  G21K1/093 ,  G21K5/04 ,  H01J37/1471 ,  H01J37/3007 ,  H01J37/3171 ,  H01J37/3172 ,  H01J2237/24542

Abstract: A beam control assembly to shape a ribbon beam of ions for ion implantation includes a first bar, second bar, first coil of windings of electrical wire, second coil of windings of electrical wire, first electrical power supply, and second electrical power supply. The first coil is disposed on the first bar. The first coil is the only coil disposed on the first bar. The second bar is disposed opposite the first bar with a gap defined between the first and second bars. The ribbon beam travels between the gap. The second coil is disposed on the second bar. The second coil is the only coil disposed on the second bar. The first electrical power supply is connected to the first coil without being electrically connected to any other coil. The second electrical power supply is connected to the second coil without being electrically connected to any other coil.

Abstract translation: 用于成形用于离子注入的离子束带的束控制组件包括第一杆，第二杆，电线的绕组的第一线圈，电线的第二绕组线圈，第一电源和第二电源。 第一线圈设置在第一杆上。 第一线圈是设置在第一条上的唯一线圈。 第二杆与第一杆相对地设置，在第一和第二杆之间限定间隙。 带状光束在间隙之间传播。 第二线圈设置在第二杆上。 第二线圈是设置在第二杆上的唯一线圈。 第一电源连接到第一线圈而不与任何其它线圈电连接。 第二电源连接到第二线圈而不与任何其它线圈电连接。

公开(公告)号：US20130239892A1

公开(公告)日：2013-09-19

申请号：US13889278

申请日：2013-05-07

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Jiong CHEN

IPC: H01J37/30

CPC classification number: H01J37/32669 ,  G21K1/093 ,  G21K5/04 ,  H01J37/1471 ,  H01J37/3007 ,  H01J37/3171 ,  H01J37/3172 ,  H01J2237/24542

Abstract: A beam control assembly to shape a ribbon beam of ions for ion implantation includes a first bar, second bar, first coil of windings of electrical wire, second coil of windings of electrical wire, first electrical power supply, and second electrical power supply. The first coil is disposed on the first bar. The first coil is the only coil disposed on the first bar. The second bar is disposed opposite the first bar with a gap defined between the first and second bars. The ribbon beam travels between the gap. The second coil is disposed on the second bar. The second coil is the only coil disposed on the second bar. The first electrical power supply is connected to the first coil without being electrically connected to any other coil. The second electrical power supply is connected to the second coil without being electrically connected to any other coil.

Abstract translation: 用于成形用于离子注入的离子束带的束控制组件包括第一杆，第二杆，电线的绕组的第一线圈，电线的第二绕组线圈，第一电源和第二电源。 第一线圈设置在第一杆上。 第一线圈是设置在第一条上的唯一线圈。 第二杆与第一杆相对地设置，在第一和第二杆之间限定间隙。 带状光束在间隙之间传播。 第二线圈设置在第二杆上。 第二线圈是设置在第二条上的唯一线圈。 第一电源连接到第一线圈而不与任何其它线圈电连接。 第二电源连接到第二线圈而不与任何其它线圈电连接。

公开(公告)号：US11600464B2

公开(公告)日：2023-03-07

申请号：US17061972

申请日：2020-10-02

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Shao-Yu Hu

IPC: H01J37/00 ,  H01J37/317 ,  H01J37/32 ,  H01J37/24

Abstract: The invention provides a bias voltage to the component (such as the Faraday cup) for reducing the generation of particles, such as the implanted ions and/or the combination of the implanted ions and the material of the component, and preventing particles peeling away the component. The strength of the biased voltage should not significantly affect the implantation of ions into the wafer and should significantly prevent the emission of radiation and/or electrons away the biased component. How to provide and adjust the biased voltage is not limited, both the extra voltage source and the amended Pre-Amplifier are acceptable. Moreover, due to the electric field generated by the Faraday cup is modified by the biased voltage, the ion beam divergence close to the Faraday cup may be reduced such that the potential difference between the ion beam measured by the profiler and received by the Faraday cup may be minimized.

公开(公告)号：US20230054419A1

公开(公告)日：2023-02-23

申请号：US17796609

申请日：2021-01-29

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Chien-Li CHEN ,  Steven R. WALTHER

IPC: H01L21/66 ,  G01B11/08 ,  G01K3/00 ,  G01S17/08 ,  G01S7/481 ,  G01B7/06 ,  H01L21/265 ,  H01L21/67

Abstract: The present disclosure relates generally to ion implantation, and more particularly, to systems and processes for measuring the temperature of a wafer within an ion implantation system. An exemplary ion implantation system may include a robotic arm, one or more load lock chambers, a pre-implantation station, an ion implanter, a post-implantation station, and a controller. The pre-implantation station is configured to heat or cool a wafer prior to the wafer being implanted with ions by the ion implanter. The post-implantation station is configured to heat or cool a wafer after the wafer is implanted with ions by the ion implanter. The pre-implantation station and/or post-implantation station are further configured to measure a current temperature of a wafer. The controller is configured to control the various components and processes described above, and to determine a current temperature of a wafer based on information received from the pre-implantation station and/or post-implantation station.

公开(公告)号：US10699876B2

公开(公告)日：2020-06-30

申请号：US15297551

申请日：2016-10-19

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Yu-Ho Ni ,  Chun-Chin Kang ,  Chieh-Jen Yang

IPC: H01J37/30 ,  H01J37/20 ,  H01L21/683 ,  B08B7/00 ,  H02N13/00 ,  H01J37/304

Abstract: A method of cleaning an electrostatic chuck (ESC) is disclosed. An ion beam is delivered to a work surface of an ESC where no workpiece is held. The interaction between the ion beam and the depositions on the work surface may remove the depositions away the ESC, no matter the interaction is physical bombardment and/or chemical reaction. Hence, the practical chucking force between the ESC and the held workpiece may be less affected by the depositions formed on the work surface during the period of holding no workpiece, no matter the photoresist dropped away the workpiece and/or the particles inside the process chamber. Depends on the details of the depositions, such as the structure, the thickness and the material, the details of ion beam may be correspondingly adjusted, such as the ion beam current, the ion beam energy and the kinds of ions. For example, a low energy ion beam may be used to reduce the potential damages on work surface of the ESC. For example, both the oxygen and the inert gas may be used to generate the ion beam for removing the depositions and protecting the dielectric layer inside the work surface of the ESC.

公开(公告)号：US20180330973A1

公开(公告)日：2018-11-15

申请号：US15928343

申请日：2018-03-22

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Chih-Chiang Wu ,  Chun-Chin Kang ,  Yu-Ho Ni ,  Chien-Ta Feng

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/66 ,  H01L21/265

CPC classification number: H01L21/67253 ,  H01L21/265 ,  H01L21/6831 ,  H01L22/14 ,  H01L22/20

Abstract: Apparatus and method for monitoring wafer charges are proposed. A conductive pin, a conductive spring and a conductive line are configured in series to connect the backside surface of the wafer and the sample conductor so that the backside surface of the wafer and the surface of the sample conductor have identical charge density. Hence, by using a static electricity sensor positioned close to the surface of the sample conductor, the charges on the wafer may be monitored. Note that the charges appeared on the frontside surface of the wafer induces charges on the backside surface of the wafer. As usual, the sample conductor is a sheet conductor and properly insulated from the surrounding environment. As usual, the sample conductor and the static electricity sensor are positioned outside the chamber where the wafer is placed and processed, so as to simplify the apparatus inside the chamber and reduce the contamination risk.

公开(公告)号：US20170069467A1

公开(公告)日：2017-03-09

申请号：US15254265

申请日：2016-09-01

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Wei-Cheng Lin ,  Yoko Kawai Parker ,  Tienyu Sheng

IPC: H01J37/32 ,  C23C16/50 ,  C23C14/34

CPC classification number: H01J37/32422 ,  H01J37/32715 ,  H01J2237/3321 ,  H01J2237/334

Abstract: A plasma-based processing system and a corresponding operation method are proposed. One or more absorbers are positioned between a plasma generation volume inside the plasma chamber and a support structure configured to support the workpiece, and then a portion of plasma delivered from the plasma generation volume to the support structure (or the workpiece) is absorbed by the absorber(s). Further, the absorber(s) are made of electrical conductive material(s), and the structure of at least one absorber and/or the relative geometric relation between at least two absorbers is adjustable. Hence, the position(s) of the electric conductor(s) overlap(s) with the delivered plasma may be adjusted, and then the ion current distribution on the cross section of the delivered plasma may be modified correspondingly.

Abstract translation: 提出了一种基于等离子体的处理系统和相应的操作方法。 一个或多个吸收器位于等离子体室内的等离子体产生体积和构造成支撑工件的支撑结构之间，然后从等离子体产生体积传送到支撑结构（或工件）的等离子体的一部分被 吸收剂。 此外，吸收体由导电材料制成，并且至少一个吸收体的结构和/或至少两个吸收体之间的相对几何关系是可调整的。 因此，可以调节电导体的位置与所输送的等离子体的重叠，然后相应地改变所输送的等离子体的横截面上的离子电流分布。

公开(公告)号：US20160293734A1

公开(公告)日：2016-10-06

申请号：US14678874

申请日：2015-04-03

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Daniel TANG ,  Zhimin WAN ,  Ching-I LI ,  Ger-Pin LIN

IPC: H01L29/66 ,  H01L21/762 ,  H01L21/265 ,  H01L21/324 ,  H01L29/10 ,  H01L21/306

CPC classification number: H01L29/66795 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/26586 ,  H01L21/30604 ,  H01L21/324 ,  H01L21/76237 ,  H01L29/1083

Abstract: In forming a punch-through stopper region in a fin field effect transistor (finFET) device, a substrate may be etched to form a pair of trenches that define a fin structure. A portion of a first dose of ions may be implanted into the substrate through a bottom wall of each trench to form a pair of first dopant regions that at least partially extend under a channel region of the fin structure. The substrate at the bottom wall of each trench may be etched to increase a depth of each trench. Etching the substrate at the bottom wall of each trench may remove a portion of each first dopant region under each trench. A remaining portion of the pair of first dopant regions under the fin structure may at least partially define the punch-through stopper region of the finFET device.

Abstract translation: 在鳍状场效应晶体管（finFET）器件中形成穿通停止区域时，可蚀刻衬底以形成限定翅片结构的一对沟槽。 第一剂量的离子的一部分可以通过每个沟槽的底壁注入到衬底中，以形成至少部分地延伸在翅片结构的沟道区域下面的一对第一掺杂区域。 可以蚀刻每个沟槽的底壁处的衬底以增加每个沟槽的深度。 在每个沟槽的底壁处蚀刻衬底可以去除每个沟槽下的每个第一掺杂剂区域的一部分。 翅片结构下面的一对第一掺杂剂区域的剩余部分可以至少部分地限定finFET器件的穿通阻挡区域。

公开(公告)号：US09450078B1

公开(公告)日：2016-09-20

申请号：US14678874

申请日：2015-04-03

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Daniel Tang ,  Zhimin Wan ,  Ching-I Li ,  Ger-Pin Lin

IPC: H01L21/38 ,  H01L29/66 ,  H01L29/10 ,  H01L21/306 ,  H01L21/265 ,  H01L21/324 ,  H01L21/762

CPC classification number: H01L29/66795 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/26586 ,  H01L21/30604 ,  H01L21/324 ,  H01L21/76237 ,  H01L29/1083

Abstract: In forming a punch-through stopper region in a fin field effect transistor (finFET) device, a substrate may be etched to form a pair of trenches that define a fin structure. A portion of a first dose of ions may be implanted into the substrate through a bottom wall of each trench to form a pair of first dopant regions that at least partially extend under a channel region of the fin structure. The substrate at the bottom wall of each trench may be etched to increase a depth of each trench. Etching the substrate at the bottom wall of each trench may remove a portion of each first dopant region under each trench. A remaining portion of the pair of first dopant regions under the fin structure may at least partially define the punch-through stopper region of the finFET device.

Abstract translation: 在鳍状场效应晶体管（finFET）器件中形成穿通停止区域时，可蚀刻衬底以形成限定翅片结构的一对沟槽。 第一剂量的离子的一部分可以通过每个沟槽的底壁注入到衬底中，以形成至少部分地延伸在翅片结构的沟道区域下面的一对第一掺杂区域。 可以蚀刻每个沟槽的底壁处的衬底以增加每个沟槽的深度。 在每个沟槽的底壁处蚀刻衬底可以去除每个沟槽下的每个第一掺杂剂区域的一部分。 翅片结构下面的一对第一掺杂剂区域的剩余部分可以至少部分地限定finFET器件的穿通阻挡区域。

公开(公告)号：US20160217970A1

公开(公告)日：2016-07-28

申请号：US14607867

申请日：2015-01-28

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Anwar HUSAIN ,  Valeriy LITVAK

IPC: H01J37/20 ,  H01J37/18 ,  H01L21/265 ,  H01J37/317

CPC classification number: H01L21/265 ,  H01J2237/20 ,  H01J2237/2065 ,  H01J2237/31701 ,  H01L21/67109 ,  H01L21/67167 ,  H01L21/67213

Abstract: An ion implanter comprising a process chamber, a FOUP and a temperature treating assembly and a method using the same are provided. A workpiece can be implanted according to a recipe of an ion implantation in the process chamber. The FOUP can transfer a workpiece toward and away from the process chamber. The temperature treating assembly comprises a vacuum chamber, a heating module and a cooling module. The vacuum chamber communicates with the process chamber and has a heating space and a cooling space next to the heating space. The heating module is mounted on the vacuum chamber from a side of the heating space for heating the workpiece located in the heating space to a first temperature. The cooling module is mounted in the cooling space for cooling the workpiece located in the cooling space to a second temperature different from the first temperature.

Abstract translation: 提供了包括处理室，FOUP和温度处理组件的离子注入机及其使用方法。 可以根据处理室中的离子注入的配方植入工件。 FOUP可以将工件朝向和远离处理室传送。 温度处理组件包括真空室，加热模块和冷却模块。 真空室与处理室连通，并具有加热空间和靠近加热空间的冷却空间。 加热模块从加热空间的一侧安装在真空室上，用于将位于加热空间中的工件加热至第一温度。 冷却模块安装在冷却空间中，用于将位于冷却空间中的工件冷却到与第一温度不同的第二温度。