ETCHING APPARATUS USING NEUTRAL BEAM AND METHOD THEREOF
    61.
    发明申请
    ETCHING APPARATUS USING NEUTRAL BEAM AND METHOD THEREOF 审中-公开
    使用中性光束的蚀刻装置及其方法

    公开(公告)号:US20080156771A1

    公开(公告)日:2008-07-03

    申请号:US11965956

    申请日:2007-12-28

    CPC classification number: H01J37/3233 H01J37/32357

    Abstract: An etching apparatus using a neutral beam includes an electron emission unit to convert an ion beam, extracted from plasma by a plurality of grids, into a neutral beam by colliding the ion beam with electrons to prevent the ion beam from physically colliding with the electron emission unit, thus preventing the damage to a neutralization unit and generation of foreign substances with a simple structure. Further, the etching apparatus converts the ion beam into the neutral beam at a high neutralizing efficiency without causing directionality and energy losses, and generates a neutral beam having a large area, thus uniformly etching a semiconductor wafer.

    Abstract translation: 使用中性光束的蚀刻装置包括电子发射单元,用于通过使离子束与电子碰撞来将通过多个栅极从等离子体提取的离子束转换成中性束,以防止离子束与电子发射物理碰撞 单元,从而防止中和单元的损坏和结构简单的异物的产生。 此外,蚀刻装置以高中和效率将离子束转换成中性光束,而不引起方向性和能量损失,并且产生具有大面积的中性光束,因此均匀地蚀刻半导体晶片。

    Ion beam extractor
    62.
    发明授权
    Ion beam extractor 失效
    离子束提取器

    公开(公告)号:US07285788B2

    公开(公告)日:2007-10-23

    申请号:US11208728

    申请日:2005-08-23

    CPC classification number: H01J37/08 H01J27/024

    Abstract: An ion beam extractor controls a direction and an intensity of ion beams by adjusting a voltage applied to a grid having slits formed therein, thereby enhancing uniformity of an etching rate of a wafer, leading to an increase of productivity of semiconductor diodes. The ion beam extractor comprises an ion source to produce an ion beam and at least one grid located at a rear end of the ion source in a progressing path of the ion beam produced by the ion source to adjust a direction of the ion beam by controlling a voltage applied to the at least one grid.

    Abstract translation: 离子束提取器通过调节施加到其上形成有狭缝的栅格的电压来控制离子束的方向和强度,从而提高晶片的蚀刻速率的均匀性,从而提高半导体二极管的生产率。 离子束提取器包括离子源以产生离子束和位于离子源的后端处的离子源的至少一个格栅,在由离子源产生的离子束的前进路径中,通过控制离子束来调节离子束的方向 施加到所述至少一个栅格的电压。

    APPARATUS TO TREAT A SUBSTRATE AND METHOD THEREOF
    63.
    发明申请
    APPARATUS TO TREAT A SUBSTRATE AND METHOD THEREOF 审中-公开
    用于处理基板的方法及其方法

    公开(公告)号:US20070068624A1

    公开(公告)日:2007-03-29

    申请号:US11532166

    申请日:2006-09-15

    CPC classification number: H01J37/321 H01J37/32357

    Abstract: An apparatus to treat a substrate including a vacuum chamber having a plasma space where plasma is generated and a treating space where a substrate is treated, an extract electrode disposed between the plasma space and the treating space, a power supply to provide power to the extract electrode, and a controller to control the power supply so that a cation beam and a negative charge beam are alternately extracted from a plasma in the plasma space to the treating space.

    Abstract translation: 一种处理基板的设备,该基板包括具有产生等离子体的等离子体空间的真空室和处理基板的处理空间,设置在等离子体空间与处理空间之间的提取电极,向提取物提供电力的电源 电极和控制器,以控制电源,使得阳离子束和负电荷束从等离子体空间中的等离子体交替提取到处理空间。

    Reusable dual crucible for silicon melting and manufacturing apparatus of silicon slim plate including the same
    66.
    发明授权
    Reusable dual crucible for silicon melting and manufacturing apparatus of silicon slim plate including the same 有权
    可重复使用的双坩埚用于硅熔化和制造硅片的制造装置

    公开(公告)号:US09096946B2

    公开(公告)日:2015-08-04

    申请号:US13304497

    申请日:2011-11-25

    CPC classification number: C30B15/007 C30B15/10 C30B29/06 C30B35/002

    Abstract: A dual crucible for silicon melting and a manufacturing apparatus of a silicon thin film including the same are disclosed. The dual crucible for the silicon melting includes a graphite crucible formed in a container shape with an open top and a bottom having an outlet part formed therein to exhaust silicon melt, the graphite crucible comprising a slope part configured to connect the outlet part and an inner wall with each other, with a predetermined slope with respect to a top surface of the outlet part, and a quartz crucible insertedly coupled to the graphite crucible, with being formed in a corresponding shape to the graphite crucible, the quartz crucible having a silicon base material charged therein.

    Abstract translation: 公开了一种用于硅熔化的双坩埚和包括其的硅薄膜的制造装置。 用于硅熔化的双坩埚包括形成为容器形状的石墨坩埚,其具有形成在其中的出口部分的开口顶部和底部,以排出硅熔体,所述石墨坩埚包括被配置为连接出口部分和内部 彼此相对于出口部分的顶表面具有预定斜率的壁和与石墨坩埚相对应地插入地连接到石墨坩埚的石英坩埚,石英坩埚具有硅基底 填充的材料。

    Debugging apparatus and method
    68.
    发明授权
    Debugging apparatus and method 有权
    调试装置和方法

    公开(公告)号:US08856596B2

    公开(公告)日:2014-10-07

    申请号:US13079275

    申请日:2011-04-04

    CPC classification number: G06F9/30076 G06F11/3644

    Abstract: A debugging apparatus and method are provided. The debugging apparatus may include a breakpoint setting unit configured to store a first instruction corresponding to a breakpoint in a table, stop a program currently being executed, and insert a breakpoint instruction including current location information of the first instruction into the breakpoint; and an instruction execution unit configured to selectively execute one of the breakpoint instruction and the first instruction according to a value of a status bit.

    Abstract translation: 提供了一种调试装置和方法。 调试装置可以包括:断点设定单元,被配置为将与断点对应的第一指令存储在表中,停止当前正在执行的程序,并将包括第一指令的当前位置信息的断点指令插入断点; 以及指令执行单元,被配置为根据状态位的值有选择地执行断点指令和第一指令之一。

    Guide thimble plug for nuclear fuel assembly
    69.
    发明授权
    Guide thimble plug for nuclear fuel assembly 有权
    用于核燃料组件的导向套管塞

    公开(公告)号:US08811566B2

    公开(公告)日:2014-08-19

    申请号:US12749470

    申请日:2010-03-29

    CPC classification number: G21C3/32 G21C3/3305 Y02E30/40

    Abstract: A guide thimble plug for a nuclear fuel assembly is provided, in which an internal threaded hole is formed through a main body so that the main body is coupled to a bottom nozzle by a screw coupling. An upper insert part is formed in the upper end of the main body. The upper insert part is inserted into a shock absorption tube. A thermal deformation prevention part is formed on the main body below the upper insert part and is recessed inward from the outer surface of the main body such that, when the main body is coupled to the guide thimble, a gap is defined between the thermal deformation prevention part and the guide thimble. The guide thimble and the shock absorption tube can be reliably fastened to the bottom nozzle, and thermal deformation of the guide thimble can be minimized.

    Abstract translation: 提供了一种用于核燃料组件的导向套筒塞,其中内螺纹孔通过主体形成,使得主体通过螺纹联接件联接到底部喷嘴。 上部插入部分形成在主体的上端。 将上部插入部分插入减震管中。 一个热变形防止部分形成在主体下面的上插入部分上,并且从主体的外表面向内凹入,使得当主体联接到导向套管时,在热变形 预防部分和导向套管。 引导套管和减震管可以可靠地固定到底部喷嘴,并且导引套管的热变形可以最小化。

    Fusing apparatus and electrophotographic image forming apparatus using the same
    70.
    发明授权
    Fusing apparatus and electrophotographic image forming apparatus using the same 有权
    定影装置和使用其的电子照相成像装置

    公开(公告)号:US08805255B2

    公开(公告)日:2014-08-12

    申请号:US13200984

    申请日:2011-10-06

    CPC classification number: G03G15/2028

    Abstract: A fusing apparatus to fuse a toner image transferred to a printing medium by applying heat and pressure. The fusing apparatus includes a separation member that is rotatably mounted on a rotation axis to separate the printing medium from one of a heating roller and a pressing roller. The separation member includes a hollow portion into which the rotation axis is inserted, and a separation portion that contacts an outer circumference of the heating roller. The separation member is installed so as to be pitched around the rotation axis and a pitching axis having an inclination angle within a range of ±10° with respect to a line that connects a contact point between the separation portion and the outer circumference of the roller from which the printing medium is to be separated and a center of the roller from which the printing medium is to be separated.

    Abstract translation: 一种定影装置,通过施加热量和压力来熔化转印到打印介质上的调色剂图像。 定影装置包括:分离构件,其可旋转地安装在旋转轴线上,以将打印介质与加热辊和加压辊之一分离。 分离构件包括插入旋转轴线的中空部分和与加热辊的外圆周接触的分离部分。 分离构件安装成围绕旋转轴倾斜并且相对于连接分离部分和辊的外圆周之间的接触点的线具有在±10°范围内的倾斜角的俯仰轴 要从中分离打印介质和要从中分离打印介质的辊的中心。

Patent Agency Ranking