公开(公告)号：US11575055B2

公开(公告)日：2023-02-07

申请号：US17151110

申请日：2021-01-15

Applicant: SLT Technologies, Inc

Inventor： Drew W. Cardwell ,  Mark P. D'Evelyn

IPC: H01L31/0232 ,  H01L31/109 ,  G01J1/44 ,  G01J1/04

Abstract: According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.

公开(公告)号：US20220406953A1

公开(公告)日：2022-12-22

申请号：US17893048

申请日：2022-08-22

Applicant: SLT Technologies, Inc.

Inventor： Drew W. CARDWELL ,  Mark P. D'EVELYN

IPC: H01L31/109 ,  H01L31/0232 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/18

Abstract: According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.

公开(公告)号：US20210249266A1

公开(公告)日：2021-08-12

申请号：US17173169

申请日：2021-02-10

Applicant: SLT Technologies, Inc.

Inventor： Mark P. D'Evelyn ,  Wenkan Jiang ,  Drew W. Cardwell ,  Dirk Ehrentraut

IPC: H01L21/02 ,  H01L29/36 ,  H01L29/20

Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

公开(公告)号：US20210249252A1

公开(公告)日：2021-08-12

申请号：US16882219

申请日：2020-05-22

Applicant: SLT Technologies, Inc

Inventor： Wenkan JIANG ,  Mark P. D'EVELYN ,  Derrick S. KAMBER ,  Dirk EHRENTRAUT ,  Jonathan D. COOK ,  James WENGER

IPC: H01L21/02 ,  C30B7/10 ,  C30B29/40 ,  C30B33/10 ,  C30B7/00

Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

公开(公告)号：US20180371609A1

公开(公告)日：2018-12-27

申请号：US16023137

申请日：2018-06-29

Applicant: SLT Technologies, Inc

Inventor： Douglas W. POCIUS ,  Derrick S. KAMBER ,  Mark P. D'EVELYN ,  Jonathan D. COOK

IPC: C23C16/30 ,  C23C16/448 ,  C30B29/40 ,  C30B7/10 ,  C23C16/44 ,  C01B21/06 ,  C23C16/01

Abstract: A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously.

公开(公告)号：USRE47114E1

公开(公告)日：2018-11-06

申请号：US15469196

申请日：2017-03-24

Applicant: SLT TECHNOLOGIES, INC.

Inventor： Mark P. D'Evelyn ,  Derrick S. Kamber

IPC: C04B35/00 ,  C01B21/06 ,  C30B9/00 ,  C30B28/06 ,  C30B29/40 ,  C30B7/10

Abstract: A gettered polycrystalline group III metal nitride is formed by heating a group III metal with an added getter in a nitrogen-containing gas. Most of the residual oxygen in the gettered polycrystalline nitride is chemically bound by the getter. The gettered polycrystalline group III metal nitride is useful as a raw material for ammonothermal growth of bulk group III nitride crystals.

公开(公告)号：US10029955B1

公开(公告)日：2018-07-24

申请号：US13657551

申请日：2012-10-22

Applicant: SLT TECHNOLOGIES, INC.

Inventor： Pakalapati Tirumala Rajeev ,  Douglas Wayne Pocius ,  Derrick S. Kamber ,  Michael Coulter

IPC: C30B7/10 ,  C30B19/08 ,  C07B33/00 ,  C30B35/00 ,  C30B29/38 ,  B01J21/06

Abstract: An improved capsule and method of use for processing materials or growing crystals in supercritical fluids is disclosed. The capsule is scalable up to very large volumes and provides for cost-effective processing. In conjunction with suitable high pressure apparatus, the capsule is capable of processing materials at pressures and temperatures of up to approximately 8 GPa and 1500° C., respectively.