公开(公告)号：US09553053B2

公开(公告)日：2017-01-24

申请号：US13558082

申请日：2012-07-25

Applicant: Tzu-Wei Chiu ,  Tzu-Yu Wang ,  Shang-Yun Hou ,  Shin-Puu Jeng ,  Hsien-Wei Chen ,  Hung-An Teng ,  Wei-Cheng Wu

Inventor： Tzu-Wei Chiu ,  Tzu-Yu Wang ,  Shang-Yun Hou ,  Shin-Puu Jeng ,  Hsien-Wei Chen ,  Hung-An Teng ,  Wei-Cheng Wu

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/00 ,  H01L23/31

CPC classification number: H01L24/81 ,  B23K1/0016 ,  C23C14/165 ,  C23C14/34 ,  C23C18/32 ,  C23C18/42 ,  H01L23/3192 ,  H01L23/562 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/05582 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/10125 ,  H01L2224/114 ,  H01L2224/1145 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/119 ,  H01L2224/11903 ,  H01L2224/13005 ,  H01L2224/13012 ,  H01L2224/13019 ,  H01L2224/13022 ,  H01L2224/13076 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13166 ,  H01L2224/13562 ,  H01L2224/13564 ,  H01L2224/13583 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/16058 ,  H01L2224/16059 ,  H01L2224/16145 ,  H01L2224/16148 ,  H01L2224/8112 ,  H01L2224/81141 ,  H01L2224/81193 ,  H01L2224/81345 ,  H01L2224/81365 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06593 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/13091 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2924/207 ,  H01L2924/206 ,  H01L2224/05552 ,  H01L2924/00

Abstract: A bump structure for electrically coupling semiconductor components is provided. The bump structure includes a first bump on a first semiconductor component and a second bump on a second semiconductor component. The first bump has a first non-flat portion (e.g., a convex projection) and the second bump has a second non-flat portion (e.g., a concave recess). The bump structure also includes a solder joint formed between the first and second non-flat portions to electrically couple the semiconductor components.

Abstract translation: 提供了用于电耦合半导体部件的凸块结构。 凸块结构包括在第一半导体部件上的第一凸块和第二半导体部件上的第二凸块。 第一凸起具有第一非平坦部分（例如，凸起的凸起），并且第二凸起具有第二非平坦部分（例如，凹形凹部）。 凸起结构还包括形成在第一和第二非平坦部分之间的焊接接头以电耦合半导体部件。

公开(公告)号：US08896089B2

公开(公告)日：2014-11-25

申请号：US13292792

申请日：2011-11-09

Applicant: Tzu-Wei Chiu ,  Tzu-Yu Wang ,  Wei-Cheng Wu ,  Chun-Yi Liu ,  Hsien-Pin Hu ,  Shang-Yun Hou

Inventor： Tzu-Wei Chiu ,  Tzu-Yu Wang ,  Wei-Cheng Wu ,  Chun-Yi Liu ,  Hsien-Pin Hu ,  Shang-Yun Hou

IPC: H01L23/52 ,  H01L21/82 ,  H01L23/498 ,  H01L23/538 ,  H01L23/00 ,  H01L23/525 ,  H01L23/48 ,  H01L23/31

CPC classification number: H01L23/49827 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/525 ,  H01L23/5256 ,  H01L23/5382 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13169 ,  H01L2224/13184 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81192 ,  H01L2924/00011 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/157 ,  H01L2924/00 ,  H01L2224/81805

Abstract: Interposers for semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, an interposer includes a substrate, a contact pad disposed on the substrate, and a first through-via in the substrate coupled to the contact pad. A first fuse is coupled to the first through-via. A second through-via in the substrate is coupled to the contact pad, and a second fuse is coupled to the second through-via.

Abstract translation: 公开了半导体器件用插入件及其制造方法。 在一个实施例中，插入器包括衬底，设置在衬底上的接触焊盘以及耦合到接触焊盘的衬底中的第一通孔。 第一保险丝耦合到第一通孔。 衬底中的第二通孔耦合到接触焊盘，并且第二保险丝耦合到第二通孔。

公开(公告)号：US08741234B2

公开(公告)日：2014-06-03

申请号：US13337900

申请日：2011-12-27

Applicant: Tzu-Yu Wang ,  Ron Bardell ,  Lynn Seifried

Inventor： Tzu-Yu Wang ,  Ron Bardell ,  Lynn Seifried

IPC: G01N21/00

CPC classification number: B01L3/502738 ,  B01L3/502753 ,  B01L2200/0636 ,  B01L2300/0681 ,  B01L2300/0816 ,  B01L2300/0864 ,  B01L2300/0867 ,  B01L2300/0874 ,  B01L2400/0406 ,  B01L2400/049 ,  B01L2400/0655 ,  G01N21/05 ,  G01N21/51 ,  G01N21/532 ,  G01N33/4915 ,  G01N2021/0346 ,  G01N2021/058 ,  G01N2021/513 ,  G01N2035/00158 ,  G01N2201/0245

Abstract: A disposable blood analysis cartridge for analyzing a blood sample including an optical absorbance measurement channel is described. The optical absorbance measurement channel includes a plasma separation region and at least one sub channel including a cuvette that is in fluid communication with the plasma separation region and configured to receive a plasma portion of a blood sample that has been passed through the plasma separation region. A negative pressure may be applied to the cartridge to draw the sample through the plasma separation region and into the sub channel including the cuvette.

Abstract translation: 描述了用于分析包括光吸收测量通道的血液样品的一次性血液分析盒。 光吸收测量通道包括等离子体分离区域和至少一个子通道，其包括与等离子体分离区域流体连通并配置成接收已经通过血浆分离区域的血液样品的血浆部分的比色皿。 可以向盒施加负压以将样品通过等离子体分离区域并进入包括比色皿的子通道。

公开(公告)号：US20130164854A1

公开(公告)日：2013-06-27

申请号：US13337900

申请日：2011-12-27

Applicant: Tzu-Yu Wang ,  Ron Bardell ,  Lynn Seifried

Inventor： Tzu-Yu Wang ,  Ron Bardell ,  Lynn Seifried

IPC: G01N33/48 ,  B01L3/00

CPC classification number: B01L3/502738 ,  B01L3/502753 ,  B01L2200/0636 ,  B01L2300/0681 ,  B01L2300/0816 ,  B01L2300/0864 ,  B01L2300/0867 ,  B01L2300/0874 ,  B01L2400/0406 ,  B01L2400/049 ,  B01L2400/0655 ,  G01N21/05 ,  G01N21/51 ,  G01N21/532 ,  G01N33/4915 ,  G01N2021/0346 ,  G01N2021/058 ,  G01N2021/513 ,  G01N2035/00158 ,  G01N2201/0245

Abstract: A disposable blood analysis cartridge for analyzing a blood sample including an optical absorbance measurement channel is described. The optical absorbance measurement channel includes a plasma separation region and at least one sub channel including a cuvette that is in fluid communication with the plasma separation region and configured to receive a plasma portion of a blood sample that has been passed through the plasma separation region. A negative pressure may be applied to the cartridge to draw the sample through the plasma separation region and into the sub channel including the cuvette.

Abstract translation: 描述了用于分析包括光吸收测量通道的血液样品的一次性血液分析盒。 光吸收测量通道包括等离子体分离区域和至少一个子通道，其包括与等离子体分离区域流体连通并配置成接收已经通过血浆分离区域的血液样品的血浆部分的比色皿。 可以向盒施加负压以将样品通过等离子体分离区域并进入包括比色皿的子通道。

公开(公告)号：US08354750B2

公开(公告)日：2013-01-15

申请号：US12697473

申请日：2010-02-01

Applicant: Tzu-Yu Wang ,  Tzu-Wei Chiu ,  Shin-Puu Jeng

Inventor： Tzu-Yu Wang ,  Tzu-Wei Chiu ,  Shin-Puu Jeng

IPC: H01L23/498

CPC classification number: H01L23/3192 ,  H01L21/76804 ,  H01L21/76885 ,  H01L23/293 ,  H01L23/31 ,  H01L23/3171 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02125 ,  H01L2224/0215 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0346 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05671 ,  H01L2224/05684 ,  H01L2224/10156 ,  H01L2224/131 ,  H01L2224/81815 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/14 ,  H01L2924/351 ,  H01L2924/06 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2224/05552 ,  H01L2924/00

Abstract: A mounting structure for a semiconductor device includes a stepwise stress buffer layer under a likewise stepwise UBM structure.

Abstract translation: 半导体器件的安装结构包括在同样的逐步UBM结构下的逐步应力缓冲层。

公开(公告)号：US07877862B2

公开(公告)日：2011-02-01

申请号：US11985023

申请日：2007-11-13

Applicant: Barrett E. Cole ,  Tzu-Yu Wang

Inventor： Barrett E. Cole ,  Tzu-Yu Wang

IPC: H05K13/04

CPC classification number: H01J17/40 ,  Y10T29/4913 ,  Y10T29/5313 ,  Y10T29/53174 ,  Y10T29/53178 ,  Y10T29/53261 ,  Y10T29/53265

Abstract: An apparatus for assembling an electronic device is disclosed, which includes one or more grid holders for maintaining one or more grids in association with a plurality of conducting components positioned perpendicular to the grid(s). One or more insulating components are also provided for mounting and supporting the conducting components. The grid holder(s) can be pushed onto the conducting components in order to eliminate the need for applying spot weld currents to the conducting components and thereby provide a weldless assembly apparatus for the precise construction of an electronic device.

Abstract translation: 公开了一种用于组装电子设备的装置，其包括一个或多个栅格保持器，用于维持与垂直于栅格定位的多个导电部件相关联的一个或多个栅格。 还提供一个或多个绝缘部件用于安装和支撑导电部件。 栅格保持器可以被推到导电部件上，以便不需要向导电部件施加点焊电流，从而提供用于精确构造电子器件的无焊接组装装置。

公开(公告)号：US07860143B2

公开(公告)日：2010-12-28

申请号：US11026161

申请日：2004-12-30

Applicant: Jin K. Kim ,  Tzu-Yu Wang ,  Gyoungwon Park

Inventor： Jin K. Kim ,  Tzu-Yu Wang ,  Gyoungwon Park

IPC: H01S3/08

CPC classification number: B82Y20/00 ,  H01S5/0207 ,  H01S5/024 ,  H01S5/18308 ,  H01S5/18375 ,  H01S5/18377 ,  H01S5/3095 ,  H01S5/34306

Abstract: A VCSEL includes a substrate having a partially removed portion; a metal-assisted DBR having a metal layer and a first mirror stack, wherein the metal layer is located at the partially removed portion of the substrate; an active region having a plurality of quantum wells over the metal-assisted DBR; and a second mirror stack over the active region, wherein a number of alternating layers of the first mirror stack is substantially smaller than a number typically required for a VCSEL without the integrated metal reflector. Such a metal-assisted DBR is especially useful for a long-wavelength VCSEL on a InP substrate or a red-color VCSEL on a GaAs substrate.

Abstract translation: VCSEL包括具有部分去除部分的基板; 具有金属层和第一反射镜叠层的金属辅助DBR，其中所述金属层位于所述基板的部分去除部分; 在金属辅助DBR上具有多个量子阱的有源区; 以及在所述有源区域上的第二反射镜堆叠，其中所述第一反射镜叠层的多个交替层比不具有所述集成金属反射器的VCSEL通常需要的数量小得多。 这种金属辅助DBR对于InP衬底上的长波长VCSEL或GaAs衬底上的红色VCSEL特别有用。

公开(公告)号：US07467779B2

公开(公告)日：2008-12-23

申请号：US11955808

申请日：2007-12-13

Applicant: Tzu-Yu Wang ,  Eugen Cabuz

Inventor： Tzu-Yu Wang ,  Eugen Cabuz

IPC: F16K31/02

CPC classification number: F16K99/0001 ,  F15C5/00 ,  F16K99/0026 ,  F16K99/0051 ,  F16K2099/0069 ,  F16K2099/0084 ,  F16K2099/0086

Abstract: A valve is provided that can selectively change the size of a flow channel in a valve in order to modulate the fluid flow through the valve. In one illustrative embodiment, the valve includes a housing that defines a cavity, with an inlet and an outlet extending into the cavity. A diaphragm is positioned in the cavity, where at least part of the diaphragm defines at least part of the fluid path. One or more electrodes are fixed relative to the diaphragm, and one or more electrodes are fixed relative to the housing such that the diaphragm can be electrostatically actuated to modulate the fluid flow through the valve.

Abstract translation: 提供一种阀，其可以选择性地改变阀中的流动通道的尺寸，以便调节通过阀的流体流动。 在一个说明性实施例中，阀包括限定空腔的壳体，其中入口和出口延伸到空腔中。 隔膜位于空腔中，其中隔膜的至少一部分限定流体路径的至少一部分。 一个或多个电极相对于隔膜固定，并且一个或多个电极相对于壳体固定，使得隔膜可被静电致动以调节通过阀的流体流动。

公开(公告)号：US20070188582A1

公开(公告)日：2007-08-16

申请号：US11354683

申请日：2006-02-15

Applicant: Cleopatra Cabuz ,  Eugen Cabuz ,  Tzu-Yu Wang ,  Chunbo Zhang

Inventor： Cleopatra Cabuz ,  Eugen Cabuz ,  Tzu-Yu Wang ,  Chunbo Zhang

IPC: B41J2/41

CPC classification number: H02N1/006 ,  F04B43/043

Abstract: An electrostatic actuator includes a body having a chamber therein, a first electrode secured to the chamber, and a diaphragm mounted to the body. The diaphragm includes a mounting surface portion secured to the body, and a dynamic surface portion for movement within the chamber. The electrostatic actuator also includes a second electrode secured relative to the diaphragm. In some embodiments, the first electrode includes a void therein. In other embodiments, the second electrode includes a void therein. In still other embodiments, both the first and the second electrode include voids therein.

Abstract translation: 静电致动器包括其中具有室的主体，固定到室的第一电极和安装到主体的隔膜。 隔膜包括固定到主体的安装表面部分和用于在腔室内移动的动态表面部分。 静电致动器还包括相对于隔膜固定的第二电极。 在一些实施例中，第一电极在其中包括空隙。 在其他实施例中，第二电极在其中包括空隙。 在其它实施例中，第一和第二电极都包括其中的空隙。

公开(公告)号：US07157730B2

公开(公告)日：2007-01-02

申请号：US10323889

申请日：2002-12-20

Applicant: Tzu-Yu Wang

Inventor： Tzu-Yu Wang

IPC: H01L29/06

CPC classification number: H01L21/26586

Abstract: Ion implantation by mounting a semiconductor wafer on a rotating plate that is tilted at an angle relative to an ion implantation flux. The tilt angle and the ion implantation energy are adjusted to produce a desired implantation profile. Ion implantation of mesa structures, either through the semiconductor wafer's surface or through the mesa structure's wall is possible. Angled ion implantation can reduce or eliminate ion damage to the lattice structure along an aperture region. This enables beneficial ion implantation profiles in vertical cavity semiconductor lasers. Mask materials, beneficially that can be lithographically formed, can selectively protect the wafer during implantation. Multiple ion implantations can be used to form novel structures.

Abstract translation: 通过将半导体晶片安装在相对于离子注入焊剂倾斜一定角度的旋转板上进行离子注入。 调整倾斜角和离子注入能量以产生所需的注入轮廓。 通过半导体晶片的表面或通过台面结构的壁离子注入台面结构是可能的。 角度离子注入可以减少或消除沿着孔区域对晶格结构的离子损伤。 这使得在垂直腔半导体激光器中有益的离子注入分布。 可以光刻形成的有益的掩模材料可以在植入期间选择性地保护晶片。 多个离子注入可用于形成新的结构。