公开(公告)号：US5787215A

公开(公告)日：1998-07-28

申请号：US748623

申请日：1996-11-13

Applicant: Yoshiki Kuhara ,  Naoyuki Yamabayashi ,  Yasuhiro Iguchi ,  Yasushi Fujimura ,  Hiromi Nakanishi

Inventor： Yoshiki Kuhara ,  Naoyuki Yamabayashi ,  Yasuhiro Iguchi ,  Yasushi Fujimura ,  Hiromi Nakanishi

IPC: H01L31/12 ,  H01L31/167 ,  G02B6/36 ,  H01S3/18 ,  H04J14/02

CPC classification number: H01L31/12 ,  H01L31/167

Abstract: WDMs have been used to separate a plurality of signals spatially by the difference of wavelengths in prior bidirectional multiwavelength optical communication network. For excluding WDMs, linear PD/LD modules adopt eigen-wavelength photodiodes sensing only the light of an eigen wavelength but allowing all the wavelengths longer than the eigen wavelength. An n-member PD/LD module aligns (n-1) eigen wavelength photodiodes, PD1, PD2, PD3, . . . , PDn-1 of .lambda.1, .lambda.2, .lambda.3, . . . ,.lambda.n-1 and an LD of .lambda. n which satisfy inequalities .lambda.1

Abstract translation: 已经使用WDM在空间上将多个信号与现有双向多波长光通信网络中的波长差异分开。 为了排除WDM，线性PD / LD模块采用本征波长光电二极管仅感测本征波长的光，但允许所有波长比特征波长长。 n成员PD / LD模块对准（n-1）本征波长光电二极管PD1，PD2，PD3。 。 。 ，λ1，λ2，λ3，...的PDn-1。 。 。 ，λn-1和λn的LD，其满足不等式λ1 <λ2 <λ3。 。 。 在束线上按照增加本征波长的顺序串联λλ。 否则，n个PD / LED模块对齐λ1，λ2，λ3的k个本征波长PD。 。 。 ，λk和（n-k）发射λk + 1，λk + 2，λk + 3的不同波长的光的LED。 。 。 波束线上的lambda n以相同的顺序。 相反，n元件LD / PD模块对齐λ1激光器和（n-1）本征波长光电二极管PD2，PD3。 。 。 ，λ2的λn，λ3。 。 。 ，λn在束线上串联（λ1 <λ2 <λ3 <... <λn）。 否则，n个LED / PD模块对齐发射不同波长λ1，λ2，λ3的光的k个LED。 。 。 ，λk + 1，λk + 2，λk + 3的λk和（n-k）本征波长PD。 。 。 λ1在束线上串联（λ1 <λ2 <λ3 <λn）。

公开(公告)号：US09040955B2

公开(公告)日：2015-05-26

申请号：US13505226

申请日：2011-05-19

Applicant: Kei Fujii ,  Katsushi Akita ,  Takashi Ishizuka ,  Hideaki Nakahata ,  Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai

Inventor： Kei Fujii ,  Katsushi Akita ,  Takashi Ishizuka ,  Hideaki Nakahata ,  Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai

IPC: H01L31/0352 ,  H01L31/105 ,  B82Y20/00

CPC classification number: H01L31/035236 ,  B82Y20/00 ,  H01L31/03046 ,  H01L31/105 ,  H01L31/1844

Abstract: Provided are a semiconductor device and an optical sensor device, each having reduced dark current, and detectivity extended toward longer wavelengths in the near-infrared. Further, a method for manufacturing the semiconductor device is provided. The semiconductor device 50 includes an absorption layer 3 of a type II (GaAsSb/InGaAs) MQW structure located on an InP substrate 1, and an InP contact layer 5 located on the MQW structure. In the MQW structure, a composition x (%) of GaAsSb is not smaller than 44%, a thickness z (nm) thereof is not smaller than 3 nm, and z≧−0.4x+24.6 is satisfied.

Abstract translation: 提供了一种半导体器件和光学传感器装置，每个具有减小的暗电流，并且在近红外线中向较长波长延伸的检测能力。 此外，提供了一种用于制造半导体器件的方法。 半导体器件50包括位于InP衬底1上的II型（GaAsSb / InGaAs）MQW结构的吸收层3和位于MQW结构上的InP接触层5。 在MQW结构中，GaAsSb的组成x（％）不小于44％，其厚度z（nm）不小于3nm，并且z≥-0.4x + 24.6。

公开(公告)号：US08564666B2

公开(公告)日：2013-10-22

申请号：US13548668

申请日：2012-07-13

Applicant: Youichi Nagai ,  Yasuhiro Iguchi

Inventor： Youichi Nagai ,  Yasuhiro Iguchi

IPC: H04N7/18

CPC classification number: B82Y20/00 ,  H01L27/14649 ,  H01L27/14694 ,  H01L31/035236

Abstract: An image pickup device, a visibility support apparatus, a night vision device, a navigation support apparatus, and a monitoring device are provided in which noise and dark current are suppressed to thereby provide clear images regardless of whether it is day or night. The device includes a light-receiving layer 3 having a multi-quantum well structure and a diffusion concentration distribution control layer 4 disposed on the light-receiving layer so as to be opposite an InP substrate 1, wherein the light-receiving layer has a band gap wavelength of 1.65 to 3 μm, the diffusion concentration distribution control layer has a lower band gap energy than InP, a pn junction is formed for each light-receiving element by selective diffusion of an impurity element, and the impurity selectively diffused in the light-receiving layer has a concentration of 5×1016/cm3 or less. A diffusion concentration distribution control layer has an n-type impurity concentration of 2×1015/cm3 or less before the diffusion, the diffusion concentration distribution control layer having a portion adjacent to the light-receiving layer, the portion having a low impurity concentration. The concentration of the impurity element selectively diffused in the diffusion concentration distribution control layer is decreased to be 5×1016/cm3 or less toward the light-receiving layer.

Abstract translation: 提供了一种图像拾取装置，可视性支持装置，夜视装置，导航支持装置和监视装置，其中抑制噪声和暗电流，从而提供清晰的图像，而不管它是白天还是夜晚。 该装置包括具有多量子阱结构的光接收层3和设置在光接收层上以与InP衬底1相对的扩散浓度分布控制层4，其中光接收层具有带 间隙波长为1.65〜3μm，扩散浓度分布控制层具有比InP低的带隙能量，通过杂质元素的选择性扩散形成每个受光元件的pn结，并且杂质选择性地扩散到光 接收层的浓度为5×1016 / cm3以下。 扩散浓度分布控制层在扩散前具有2×1015 / cm3以下的n型杂质浓度，扩散浓度分布控制层具有与光接收层相邻的部分，该杂质浓度低的部分。 在扩散浓度分布控制层中选择性扩散的杂质元素的浓度降低到光接收层的5×1016 / cm3以下。

公开(公告)号：US20130248821A1

公开(公告)日：2013-09-26

申请号：US13991129

申请日：2011-11-29

Applicant: Kohei Miura ,  Hiroshi Inada ,  Yasuhiro Iguchi ,  Tadashi Saito

Inventor： Kohei Miura ,  Hiroshi Inada ,  Yasuhiro Iguchi ,  Tadashi Saito

IPC: H01L31/109

CPC classification number: H01L31/109 ,  B82Y20/00 ,  H01L21/02392 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02505 ,  H01L21/02546 ,  H01L21/02549 ,  H01L27/1446 ,  H01L27/1464 ,  H01L31/0304 ,  H01L31/035236 ,  H01L31/075 ,  H01L31/105 ,  H01L31/184 ,  Y02E10/544 ,  Y02E10/548 ,  Y02P70/521

Abstract: A light receiving element includes an InP substrate that is transparent to light having a wavelength of 3 to 12 μm, a buffer layer located in contact with the InP substrate, and a light-receiving layer having a multiple quantum well structure, the light-receiving layer having a cutoff wavelength of 3 μm or more and being lattice-matched with the buffer layer. In the light receiving element, the buffer layer is epitaxially grown on the InP substrate while the buffer layer and the InP substrate exceed a range of a normal lattice-matching condition, and the buffer layer is constituted by a GaSb layer.

Abstract translation: 光接收元件包括对波长为3〜12μm的光透明的InP衬底，与InP衬底接触的缓冲层和具有多量子阱结构的光接收层，受光元件 具有3μm以上的截止波长并与缓冲层进行晶格匹配的层。 在光接收元件中，缓冲层在InP衬底上外延生长，而缓冲层和InP衬底超过正常晶格匹配条件的范围，缓冲层由GaSb层构成。

公开(公告)号：US20120223290A1

公开(公告)日：2012-09-06

申请号：US13451031

申请日：2012-04-19

Applicant: Yasuhiro Iguchi ,  Kohei Miura ,  Hiroshi Inada ,  Youichi Nagai

Inventor： Yasuhiro Iguchi ,  Kohei Miura ,  Hiroshi Inada ,  Youichi Nagai

IPC: H01L31/0352 ,  H01L31/18

CPC classification number: H01L31/035236 ,  B82Y20/00 ,  H01L21/02392 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/0262 ,  H01L21/02631 ,  H01L27/14683 ,  H01L31/03046 ,  H01L31/102 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

Abstract: A light-receiving element includes a group III-V compound semiconductor stacked structure that includes an absorption layer having a pn-junction therein. The stacked structure is formed on a group III-V compound semiconductor substrate. The absorption layer has a multi- quantum well structure composed of group III-V compound semiconductors, and the pn-junction is formed by selectively diffusing an impurity element into the absorption layer. A diffusion concentration distribution control layer composed of a III-V group semiconductor is disposed in contact with the absorption layer on a side of the absorption layer opposite the side adjacent to the group III-V compound semiconductor substrate. The bandgap energy of the diffusion concentration distribution control layer is smaller than that of the group III-V compound semiconductor substrate. The concentration of the impurity element selectively diffused in the diffusion concentration distribution control layer is 5×1016/cm3 or less toward the absorption layer.

Abstract translation: 光接收元件包括III-V族化合物半导体层叠结构，其包括其中具有pn结的吸收层。 叠层结构形成在III-V族化合物半导体衬底上。 吸收层具有由III-V族化合物半导体组成的多量子阱结构，并且通过选择性地将杂质元素扩散到吸收层中而形成pn结。 由III-V族半导体构成的扩散浓度分布控制层设置成与吸收层的与III-V族化合物半导体衬底相邻的一侧相反侧的吸收层接触。 扩散浓度分布控制层的带隙能量小于III-V族化合物半导体衬底的带隙能量。 在扩散浓度分布控制层中选择性扩散的杂质元素的浓度朝向吸收层为5×1016 / cm3以下。

公开(公告)号：US08120061B2

公开(公告)日：2012-02-21

申请号：US12522296

申请日：2008-01-07

Applicant: Yasuhiro Iguchi ,  Yuichi Kawamura

Inventor： Yasuhiro Iguchi ,  Yuichi Kawamura

IPC: H01L31/102

CPC classification number: B82Y20/00 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/109 ,  Y02E10/544

Abstract: A light receiving device having small dark current and capable of sensing light in the wavelength range of 2.0 μm to 3.0 μm with high sensitivity is provided. The light receiving device has an InP substrate, and a light receiving layer formed by alternately stacking a larger layer formed of GaInNAsSbP mixed crystal having nitrogen content of at most 5% in 5 group, larger lattice constant than that of InP and thickness between hc and 11hc, the critical thickness hc being determined as hc=b(1−ν cos2α){log(hc/b)+1}/8πf(1+ν)cos λ and a smaller layer formed of GaInNAsSbP mixed crystal having nitrogen content of at most 5% in 5 group, smaller lattice constant than that of InP and thickness between hc and 11hc; absolute value of lattice mismatch of the larger layer and the smaller layer to the InP substrate is at least 0.5% and at most 5%; at least one of the layers has absorption edge wavelength of 2.0 μm to 3.0 μm; total thickness of respective layers is 2.0 μm to 4.0 μm; and thickness-weighted average lattice mismatch is set to be at most ±0.2%.

Abstract translation: 提供具有小的暗电流并且能够以高灵敏度感测波长范围为2.0μm至3.0μm的光的光接收装置。 光接收装置具有InP基板，并且通过交替堆叠由5组中具有至多5％的氮含量的GaInNAsSbP混合晶体形成的较大层而形成的光接收层，其比InP的晶格常数大，hc和 11hc，临界厚度hc被确定为hc = b（1-＆ngr;cos2α）{log（hc / b）+1} / 8＆pgr; f（1 +＆ngr））cosλ，以及由GaInNAsSbP混合晶体形成的较小层 5组氮含量最多为5％，晶格常数小于InP，hc和11hc之间的厚度较小; 较大层和较小层与InP衬底的晶格失配的绝对值为至少0.5％且至多5％; 所述层中的至少一层的吸收边缘波长为2.0μm〜3.0μm; 各层的总厚度为2.0μm〜4.0μm; 厚度加权平均晶格失配最大为±0.2％。

公开(公告)号：US20110147707A1

公开(公告)日：2011-06-23

申请号：US12965660

申请日：2010-12-10

Applicant: Hiroshi INADA ,  Yasuhiro IGUCHI ,  Youichi NAGAI ,  Hiroki MORI ,  Kouhei MIURA

Inventor： Hiroshi INADA ,  Yasuhiro IGUCHI ,  Youichi NAGAI ,  Hiroki MORI ,  Kouhei MIURA

IPC: H01L27/146 ,  H01L31/18

CPC classification number: H01L27/14636 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/1469 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: The present invention provides an image pickup device used to capture an image of an object by receiving light in a near infrared region reflected from the object. The image pickup device includes semiconductor light-receiving elements each having a light-receiving layer with a band gap wavelength of 1.65 to 3.0 μm.

Abstract translation: 本发明提供了一种用于通过在从物体反射的近红外区域中接收光来捕获对象的图像的图像拾取装置。 图像拾取装置包括各自具有带隙波长为1.65至3.0μm的光接收层的半导体光接收元件。

公开(公告)号：US20100327386A1

公开(公告)日：2010-12-30

申请号：US12494393

申请日：2009-06-30

Applicant: Youichi Nagai ,  Yasuhiro Iguchi

Inventor： Youichi Nagai ,  Yasuhiro Iguchi

IPC: H01L27/146 ,  H01L31/0216 ,  H01L31/18

CPC classification number: H01L27/14689 ,  H01L27/1446 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14643

Abstract: A photodiode array includes a substrate of a common read-out control circuit; and a plurality of photodiodes arrayed on the substrate and each including an absorption layer, and a pair of a first conductive-side electrode and a second conductive-side electrode. In this photodiode array, each of the photodiodes is isolated from adjacent photodiodes, the first conductive-side electrodes are provided on first conductivity-type regions and electrically connected in common across all the photodiodes, and the second conductive-side electrodes are provided on second conductivity-type regions and individually electrically connected to read-out electrodes of the read-out control circuit.

Abstract translation: 光电二极管阵列包括公共读出控制电路的基板; 以及排列在基板上并且各自包括吸收层的多个光电二极管，以及一对第一导电侧电极和第二导电侧电极。 在该光电二极管阵列中，每个光电二极管与相邻的光电二极管隔离，第一导电侧电极设置在第一导电型区域上，并且在所有光电二极管上共同电连接，第二导电侧电极设置在第二导电型电极上 导电型区域，并且分别电连接到读出控制电路的读出电极。

公开(公告)号：US20100051905A1

公开(公告)日：2010-03-04

申请号：US12508008

申请日：2009-07-23

Applicant: Yasuhiro Iguchi ,  Youichi Nagai

Inventor： Yasuhiro Iguchi ,  Youichi Nagai

IPC: H01L29/06 ,  H01L31/00

CPC classification number: H01L31/035236 ,  B82Y20/00 ,  H01L31/03042 ,  H01L31/03046 ,  Y02E10/544

Abstract: A moisture detector includes a light-receiving element including an absorption layer having a pn-junction, or an array of the light-receiving elements, wherein the absorption layer has a multiquantum well structure composed of a Group III-V semiconductor, the pn-junction is formed by selectively diffusing an impurity element into the absorption layer, and the concentration of the impurity in the absorption layer is 5×1016/cm3 or less. The moisture detector receives light having at least one wavelength included in an absorption band of water lying in a wavelength range of 3 μm or less, thereby detecting moisture.

Abstract translation: 水分检测器包括具有pn结的吸收层或受光元件的阵列的光接收元件，其中吸收层具有由III-V族半导体组成的多量子阱结构，pn- 通过选择性地将杂质元素扩散到吸收层中而形成结，并且吸收层中的杂质浓度为5×1016 / cm3以下。 水分检测器接收具有在3μm以下的波长范围内的水的吸收带中包含的至少一个波长的光，从而检测水分。

公开(公告)号：US20080188078A1

公开(公告)日：2008-08-07

申请号：US12010517

申请日：2008-01-25

Applicant: Yasuhiro Iguchi ,  Nobuyuki Mitsui

Inventor： Yasuhiro Iguchi ,  Nobuyuki Mitsui

IPC: H01L21/302

CPC classification number: H01L31/184 ,  H01L33/0062 ,  Y02E10/544 ,  Y02P70/521

Abstract: A circumferential portion of an epitaxial wafer is removed to remove an anomalously grown elevated portion formed in a circumferential chamfer. An epitaxial layer in the circumferential portion is removed with a width q=t to 5t wherein t is the thickness of the epitaxial layer so that the surface of a substrate is exposed. Therefore, cracking of the epitaxial layer in processing steps can be prevented.

Abstract translation: 去除外延晶片的圆周部分以除去形成在周向倒角中的异常生长的升高部分。 外周部分的外延层以宽度q = t至5t去除，其中t为外延层的厚度，从而露出基板的表面。 因此，可以防止加工步骤中的外延层的破裂。