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    HIGH SENSITIVTY SENSOR DEVICE AND MANUFACTURING THEREOF
    61.
    发明申请
    HIGH SENSITIVTY SENSOR DEVICE AND MANUFACTURING THEREOF 有权
    高灵敏度传感器及其制造方法

    公开(公告)号：US20110169648A1

    公开(公告)日：2011-07-14

    申请号：US13041433

    申请日：2011-03-06

    Applicant: Achyut Kumar Dutta ,  Rabi Sengupta

    Inventor： Achyut Kumar Dutta ,  Rabi Sengupta

    IPC: G08B21/00 ,  G01N21/84 ,  G06G7/18

    CPC classification number: G01N21/7703 ,  B82Y20/00 ,  G02B6/1225 ,  G02B2006/12138

    Abstract: A sensing device able to do concurrent real time detection of different kinds of chemical, biomolecule agents, or biological cells and their respective concentrations using optical principles. The sensing system can be produced at a low cost (below$1.00) and in a small size (˜1 cm3). The novel sensing system may be of great value to many industries, for example, medical, forensics, and military. The fundamental principles of this novel invention may be implemented in many variations and combinations of techniques.

    Abstract translation: 一种能够使用光学原理同时实时检测不同种类的化学，生物分子试剂或生物细胞及其各自浓度的感测装置。 传感系统可以低成本（低于1.00美元）和小尺寸（〜1立方厘米）生产。 新型传感系统可能对许多行业具有重要意义，例如医疗，法医，军事等。 这种新颖发明的基本原理可以以许多变化和技术的组合来实现。

    Method of manufacturing high speed printed circuit board interconnects
    62.
    发明授权
    Method of manufacturing high speed printed circuit board interconnects 有权
    制造高速印刷电路板互连的方法

    公开(公告)号：US07975378B1

    公开(公告)日：2011-07-12

    申请号：US12683356

    申请日：2010-01-06

    Applicant: Achyut Kumar Dutta

    Inventor： Achyut Kumar Dutta

    IPC: H05K3/36

    CPC classification number: H05K1/0253 ,  H05K1/024 ,  H05K3/4611 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49144 ,  Y10T29/49165

    Abstract: Described are methods for fabricating high speed metallic electrical interconnects for printed wiring board for high speed transmission of a data signal across an interconnect in a systems. The trench under electrical signal line is made using the separate dielectric layer having through holes opened through that said dielectric layer and aligned with electrical signal line. The layer with through holes aligned with electrical signal line sandwiched in between layer carrying the electrical signal line and a layer carrying ground conducting line for the case of microstrip-type transmission line. The two separate layers with the through-holes opened and aligned with the electrical signal line are needed for the stripline-type transmission line. Multi-layers board having high speed electrical signal lines can be made utilizing the configuration described.

    Abstract translation: 描述了用于制造用于印刷线路板的高速金属电互连的方法，用于跨系统中的互连件的数据信号的高速传输。 电信号线下方的沟槽是由具有通过所述电介质层开口并与电信号线对齐的通孔的单独介质层制成的。 具有通孔的层与电信号线对准，夹在电信号线之间的层和承载微带传输线情况的地面导电线之间。 对于带状线传输线，需要具有打开并与电信号线对准的通孔的两个分开的层。 可以利用所述的配置来制造具有高速电信号线的多层板。

    Broadband imaging device and manufacturing thereof
    63.
    发明授权
    Broadband imaging device and manufacturing thereof 有权
    宽带成像装置及其制造

    公开(公告)号：US07972885B1

    公开(公告)日：2011-07-05

    申请号：US12566659

    申请日：2009-09-24

    Applicant: Achyut Kumar Dutta ,  Robert Allen Olah

    Inventor： Achyut Kumar Dutta ,  Robert Allen Olah

    IPC: H01L21/00

    CPC classification number: H01L27/14634 ,  B82Y20/00 ,  H01L31/0352 ,  H01L31/035236 ,  H01L31/035281 ,  H01L31/18 ,  Y02E10/50

    Abstract: This invention relates to imaging device and its related transferring technologies to independent substrate able to attain significant broadband capability covering the wavelengths from ultra-violet (UV) to long-Infrared. More particularly, this invention is related to the broadband image sensor (along with its manufacturing technologies), which can detect the light wavelengths ranges from as low as UV to the wavelengths as high as 20 μm covering the most of the wavelengths using of the single monolithic image sensor on the single wafer. This invention is also related to the integrated circuit and the bonding technologies of the image sensor to standard integrated circuit for multicolor imaging, sensing, and advanced communication. Our innovative approach utilizes surface structure having more than micro-nano-scaled 3-dimensional (3-D) blocks which can provide broad spectral response. Utilizing multiple micro-nano scaled blocks help to increase the absorption spectra more than the material used as the absorption layer. In addition, utilizing the multiple nano-scaled 3-D blocks help to increase the absorption over the wavelength due to the multiple reflections and diffractions inside the 3-D structures. The absorption layers will be designed to achieve the required quantum efficiency and also required speed.

    Abstract translation: 本发明涉及成像装置及其相关的转移技术，可以实现覆盖从紫外（UV）到长红外的波长的显着宽带能力的独立基板。 更具体地说，本发明涉及宽带图像传感器（及其制造技术），其可以使用单个波长来检测覆盖大多数波长的高达20微米的低至UV的波长的光波长范围 单片图像传感器。 本发明还涉及图像传感器与用于多色成像，感测和高级通信的标准集成电路的集成电路和接合技术。 我们的创新方法利用具有超过微纳米级3维（3-D）块的表面结构，可提供广泛的光谱响应。 利用多个微纳米尺度的块有助于比用作吸收层的材料更多地增加吸收光谱。 此外，利用多个纳米尺度的3-D块有助于增加由于在3-D结构内部的多次反射和衍射而导致的波长上的吸收。 吸收层将被设计成实现所需的量子效率和所需的速度。

    High sensitivity sensor device and manufacturing thereof
    64.
    发明授权
    High sensitivity sensor device and manufacturing thereof 有权
    高灵敏度传感器装置及其制造

    公开(公告)号：US07922976B2

    公开(公告)日：2011-04-12

    申请号：US11552080

    申请日：2006-10-23

    Applicant: Achyut Kumar Dutta ,  Rabi S Sengupta

    Inventor： Achyut Kumar Dutta ,  Rabi S Sengupta

    IPC: G01N21/00

    CPC classification number: G01N21/7703 ,  B82Y20/00 ,  G02B6/1225 ,  G02B2006/12138

    Abstract: A sensing device able to do concurrent real time detection of different kinds of chemical, biomolecule agents, or biological cells and their respective concentrations using optical principles. The sensing system can be produced at a low cost (below $1.00) and in a small size (˜1 cm3). The novel sensing system may be of great value to many industries, for example, medical, forensics, and military. The fundamental principles of this novel invention may be implemented in many variations and combinations of techniques.

    Abstract translation: 一种能够使用光学原理同时实时检测不同种类的化学，生物分子试剂或生物细胞及其各自浓度的感测装置。 传感系统可以低成本（低于1.00美元）和小尺寸（〜1立方厘米）生产。 新型传感系统可能对许多行业具有重要意义，例如医疗，法医，军事等。 这种新颖发明的基本原理可以以许多变化和技术的组合来实现。

    Low loss electrical delay line
    67.
    发明授权
    Low loss electrical delay line 有权
    低损耗电延时线

    公开(公告)号：US07561006B2

    公开(公告)日：2009-07-14

    申请号：US11467536

    申请日：2006-08-25

    Applicant: Achyut Kumar Dutta

    Inventor： Achyut Kumar Dutta

    IPC: H01P1/18 ,  H01P3/08 ,  H01P9/00

    CPC classification number: H01P3/003 ,  H01L23/66 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/19032 ,  H01L2924/3011 ,  H01P3/08 ,  H01P9/00 ,  H01L2924/00

    Abstract: A delay line system able to reduce the microwave loss by reducing the effective dielectric loss and dielectric constant of the system including a signal line, dielectric system with opened trench or slot filled up with the air or lower dielectric loss material, a ground plane, and a system of switches if the line is to be variable. The delay line proposed in this invention could be made of any type of signal line configuration, for example: micro-strip line, strip line, or coplanar line. The signal line can also be made as single ended or differential pairs of any configurations. The delay line systems based on the fundamental techniques provided in this invention can be used for on-chip devices where the delay line is laid on the oxide or dielectric material, or in a traditional PCB implementation such as FR4.

    Abstract translation: 一种延迟线系统，其能够通过降低系统的有效介电损耗和介电常数降低微波损耗，包括信号线，具有开放的沟槽或填充有空气或下介电损耗材料的槽的介质系统，接地平面和 如果线路是可变的，则是开关系统。 本发明中提出的延迟线可由任何类型的信号线构成，例如：微带线，带状线或共面线。 信号线也可以作为任何配置的单端或差分对。 基于本发明提供的基本技术的延迟线系统可以用于片上器件，其中延迟线被放置在氧化物或电介质材料上，或者在传统的PCB实施例如FR4中。

    Surface-emission type light-emitting diode and fabrication process therefor
    70.
    发明授权
    Surface-emission type light-emitting diode and fabrication process therefor 失效
    表面发射型发光二极管及其制造工艺

    公开(公告)号：US5972731A

    公开(公告)日：1999-10-26

    申请号：US61622

    申请日：1998-04-16

    Applicant: Achyut Kumar Dutta

    Inventor： Achyut Kumar Dutta

    IPC: H01L33/10 ,  H01L33/12 ,  H01L33/14 ,  H01L33/20 ,  H01L33/30 ,  H01L33/38 ,  H01L33/58 ,  H01L21/31

    CPC classification number: H01L33/30 ,  H01L33/10 ,  H01L33/14 ,  H01L33/145 ,  H01L33/385 ,  H01L33/44

    Abstract: An n-type GaAs layer as a buffer layer, an n-type (Al.sub.0.7 Ga.sub.0.3).sub.0.5 In.sub.0.5 P layer, an active layer, a p-type (Al.sub.0.7 Ga.sub.0.3).sub.0.5 In.sub.0.5 P layer, a thin layer of Al.sub.x Ga.sub.1-x As layer (x.gtoreq.0.9), an Al.sub.0.7 Ga.sub.0.3 As layer as a current spreading layer and a high doped p-type GaAs cap layer are sequentially grown on an n-type GaAs layer of a substrate. As the active layer, an (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P based bulk or multi-quantum well is employed. As the current spreading layer, an Al.sub.x Ga.sub.1-x As (x.gtoreq.0.7) is employed. The current spreading layer is a p-type III-IV compound semiconductor having wider band gap than a band gap of a material used for forming the active layer, and being established a lattice matching with the lower p-type cladding layer. After mesa etching up to the cladding layer, growth of selective oxide is performed at a part of the AlGaAs layer. BY this, a block layer (selective oxide of AlGaAs) is formed. By this blocking layer, a light output power and a coupling efficiency are improved.

    Abstract translation: 作为缓冲层的n型GaAs层，n型（Al0.7Ga0.3）0.5In0.5P层，有源层，p型（Al0.7Ga0.3）0.5In0.5P层， Al x Ga 1-x As层（x> = 0.9）的薄层，作为电流扩散层的Al 0.7 Ga 0.3 As层和高掺杂p型GaAs覆盖层依次生长在衬底的n型GaAs层上 。 作为有源层，使用（Al x Ga 1-x）0.5 In 0.5 P基本体或多量子阱。 作为电流扩散层，使用Al x Ga 1-x As（x> = 0.7）。 电流扩展层是具有比用于形成有源层的材料的带隙更宽的带隙的p型III-IV化合物半导体，并且与下部p型覆层形成晶格匹配。 在台面蚀刻到包覆层之后，在AlGaAs层的一部分进行选择性氧化物的生长。 由此，形成阻挡层（AlGaAs的选择性氧化物）。 通过该阻挡层，提高了光输出功率和耦合效率。

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