公开(公告)号：US20150345028A1

公开(公告)日：2015-12-03

申请号：US14288696

申请日：2014-05-28

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Jie Liu ,  Anchuan Wang ,  Nitin K. Ingle ,  Jeffrey W. Anthis ,  Benjamin Schmiege

IPC: C23F1/12 ,  H01L21/3213 ,  H01J37/32

CPC classification number: C23F1/12 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J2237/327 ,  H01J2237/334 ,  H01J2237/3341 ,  H01L21/32135 ,  H01L21/32138

Abstract: Methods are described herein for etching metal films which are difficult to volatize. The methods include exposing a metal film to a chlorine-containing precursor (e.g. Cl2). Chlorine is then removed from the substrate processing region. A carbon-and-nitrogen-containing precursor (e.g. TMEDA) is delivered to the substrate processing region to form volatile metal complexes which desorb from the surface of the metal film. The methods presented remove metal while very slowly removing the other exposed materials. A thin metal oxide layer may be present on the surface of the metal layer, in which case a local plasma from hydrogen may be used to remove the oxygen or amorphize the near surface region, which has been found to increase the overall etch rate.

Abstract translation: 本文描述了用于蚀刻难以挥发的金属膜的方法。 这些方法包括将金属膜暴露于含氯前体（例如Cl 2）。 然后从基板处理区域除去氯。 将含碳和氮的前体（例如TMEDA）输送到基底加工区域以形成从金属膜的表面解吸的挥发性金属络合物。 所提供的方法去除金属，同时非常缓慢地除去其它暴露的材料。 金属层的表面上可能存在薄的金属氧化物层，在这种情况下，可以使用来自氢的局部等离子体来除去氧或使近表面区域非晶化，这已经被发现增加了整个蚀刻速率。

公开(公告)号：US09190293B2

公开(公告)日：2015-11-17

申请号：US14215417

申请日：2014-03-17

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Jie Liu ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/4763 ,  H01L21/3213 ,  H01J37/32

CPC classification number: H01L21/32136 ,  H01J37/32357 ,  H01J2237/334

Abstract: Methods of evenly etching tungsten liners from high aspect ratio trenches are described. The methods include ion bombardment of a patterned substrate having high aspect ratio trenches. The ion bombardment includes fluorine-containing ions and the ion bombardment may be stopped before breaking through the horizontal liner portion outside the trenches but near the opening of the trenches. The methods then include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten. The plasmas effluents react with exposed surfaces and remove tungsten from outside the trenches and on the sidewalls of the trenches. The plasma effluents pass through an ion suppression element positioned between the remote plasma and the substrate processing region.

Abstract translation: 描述了从高纵横比沟槽均匀地蚀刻钨衬垫的方法。 这些方法包括具有高纵横比沟槽的图案化衬底的离子轰击。 离子轰击包括含氟离子，并且可以在穿过沟槽外部的水平衬套部分但在沟槽的开口附近之前停止离子轰击。 然后，该方法包括使用由含氟前体形成的等离子体流出物的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与钨反应。 等离子体流出物与暴露的表面反应并从沟槽的外部和沟槽的侧壁上除去钨。 等离子体流出物通过位于远程等离子体和基板处理区域之间的离子抑制元件。

公开(公告)号：US20150235863A1

公开(公告)日：2015-08-20

申请号：US14703333

申请日：2015-05-04

Applicant: Applied Materials, Inc.

Inventor： Zhijun Chen ,  Jingchun Zhang ,  Ching-Mei Hsu ,  Seung Park ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01J37/32357

Abstract: A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with a nitrogen-and-hydrogen-containing precursor. Reactants thereby produced etch the patterned heterogeneous structures with high silicon oxide selectivity while the substrate is at high temperature compared to typical Siconi™ processes. The etch proceeds without producing residue on the substrate surface. The methods may be used to remove silicon oxide while removing little or no silicon, polysilicon, silicon nitride or titanium nitride.

Abstract translation: 描述了在图案化异质结构上蚀刻暴露的氧化硅的方法，并且包括由含氟前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与含氮和氢的前体结合。 因此，与典型的Siconi TM工艺相比，反应物在衬底处于高温下时蚀刻具有高氧化硅选择性的图案化异质结构。 蚀刻进行而不会在基板表面上产生残留物。 该方法可以用于去除硅或氧化硅，同时除去硅或多晶硅，氮化硅或氮化钛。

公开(公告)号：US20150118857A1

公开(公告)日：2015-04-30

申请号：US14584099

申请日：2014-12-29

Applicant: Applied Materials, Inc.

Inventor： Jie Liu ,  Jingchun Zhang ,  Anchuan Wang ,  Nitin K. Ingle ,  Seung Park ,  Zhijun Chen ,  Ching-Mei Hsu

IPC: H01L21/3213

CPC classification number: H01L21/32136 ,  H01J37/32357

Abstract: Methods of etching exposed titanium nitride with respect to other materials on patterned heterogeneous structures are described, and may include a remote plasma etch formed from a fluorine-containing precursor. Precursor combinations including plasma effluents from the remote plasma are flowed into a substrate processing region to etch the patterned structures with high titanium nitride selectivity under a variety of operating conditions. The methods may be used to remove titanium nitride at faster rates than a variety of metal, nitride, and oxide compounds.

Abstract translation: 描述了相对于图案化异质结构上的其它材料蚀刻暴露的氮化钛的方法，并且可以包括由含氟前体形成的远程等离子体蚀刻。 包括来自远程等离子体的等离子体流出物的前体组合流入基板处理区域以在各种操作条件下以高氮化钛选择性蚀刻图案化结构。 该方法可用于以比各种金属，氮化物和氧化物化合物更快的速率除去氮化钛。

公开(公告)号：US20150079797A1

公开(公告)日：2015-03-19

申请号：US14479671

申请日：2014-09-08

Applicant: Applied Materials, Inc.

Inventor： Zhijun Chen ,  Zihui Li ,  Anchuan Wang ,  Nitin K. Ingle ,  Shankar Venkataraman

IPC: H01L21/02 ,  H01L21/3065

CPC classification number: H01L21/02205 ,  H01J37/32357 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31116

Abstract: A method of etching silicon nitride on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and a nitrogen-and-oxygen-containing precursor. Plasma effluents from two remote plasmas are flowed into a substrate processing region where the plasma effluents react with the silicon nitride. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon nitride while very slowly removing silicon, such as polysilicon. The silicon nitride selectivity results partly from the introduction of fluorine-containing precursor and nitrogen-and-oxygen-containing precursor using distinct (but possibly overlapping) plasma pathways which may be in series or in parallel.

Abstract translation: 描述了在图案化的异质结构上蚀刻氮化硅的方法，并且包括由含氟前体和含氮和氧的前体形成的远程等离子体蚀刻。 来自两个远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与氮化硅反应。 等离子体流出物与图案化的异质结构反应以选择性地去除氮化硅，同时非常缓慢地除去硅，例如多晶硅。 氮化硅选择性部分取决于使用可能是串联或并联的不同（但可能重叠的）等离子体途径引入含氟前体和含氮和氧的前体。

公开(公告)号：US20140199850A1

公开(公告)日：2014-07-17

申请号：US13839948

申请日：2013-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Sang Hyuk Kim ,  Dongqing Yang ,  Young S. Lee ,  Weon Young Jung ,  Sang-jin Kim ,  Ching-Mei Hsu ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/311

CPC classification number: H01L21/3065 ,  C23C16/0245 ,  H01J37/32357 ,  H01J2237/334 ,  H01L21/02046 ,  H01L21/02068 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/76814

Abstract: Methods of selectively etching tungsten oxide relative to tungsten, silicon oxide, silicon nitride and/or titanium nitride are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H2). Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten oxide. The plasmas effluents react with exposed surfaces and selectively remove tungsten oxide while very slowly removing other exposed materials. In some embodiments, the tungsten oxide selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate.

Abstract translation: 描述了相对于钨，氧化硅，氮化硅和/或氮化钛选择性地蚀刻氧化钨的方法。 这些方法包括由含氟前体和/或氢（H 2）形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与氧化钨反应。 等离子体流出物与暴露的表面反应并选择性地去除氧化钨，同时非常缓慢地除去其它暴露的材料。 在一些实施方案中，氧化钨选择性部分地来自位于远程等离子体和基板处理区域之间的离子抑制元件的存在。 离子抑制元件减少或基本消除了到达衬底的离子充电物质的数量。

公开(公告)号：US08765574B2

公开(公告)日：2014-07-01

申请号：US13832802

申请日：2013-03-15

Applicant: Applied Materials, Inc.

Inventor： Jingchun Zhang ,  Nitin K. Ingle ,  Anchuan Wang

IPC: H01L21/76

CPC classification number: H01L21/31116 ,  H01J37/32357 ,  H01J2237/3347 ,  H01L21/3065 ,  H01L21/31122 ,  H01L21/32136 ,  H01L21/32137

Abstract: A method for conformal dry etch of a liner material in a high aspect ratio trench is achieved by depositing or forming an inhomogeneous passivation layer which is thicker near the opening of a trench but thinner deep within the trench. The method described herein use a selective etch following formation of the inhomogeneous passivation layer. The selective etch etches liner material faster than the passivation material. The inhomogeneous passivation layer suppresses the etch rate of the selective etch near the top of the trench (where it would otherwise be fastest) and gives the etch a head start deeper in the trench (where is would otherwise be slowest). This method may also find utility in removing bulk material uniformly from within a trench.

Abstract translation: 通过沉积或形成非常均匀的钝化层来实现在高纵横比沟槽中的衬垫材料的保形干蚀刻的方法，所述不均匀钝化层在沟槽的开口附近较厚，但在沟槽内较深。 本文描述的方法在形成不均匀钝化层之后使用选择性蚀刻。 选择性蚀刻蚀刻衬垫材料比钝化材料更快。 非均匀钝化层抑制在沟槽顶部附近的选择性蚀刻的蚀刻速率（否则其将是最快的），并且使蚀刻在沟槽中开始更深（否则其将是最慢的）。 该方法也可用于从沟槽内均匀地去除大量材料。

公开(公告)号：US20140166617A1

公开(公告)日：2014-06-19

申请号：US13790668

申请日：2013-03-08

Applicant: APPLIED MATERIALS, INC.

Inventor： Zhijun Chen ,  Seung Park ,  Mikhail Korolik ,  Anchuan Wang ,  Nitin K. Ingle

IPC: C23F1/12

CPC classification number: H01L21/31122 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244

Abstract: A method of etching exposed titanium oxide on heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flawed into a substrate processing region where the plasma effluents may combine with a nitrogen-containing precursor such as an amine (N:) containing precursor. Reactants thereby produced etch, the patterned heterogeneous structures with high titanium oxide selectivity while the substrate is at elevated temperature. Titanium oxide etch may alternatively involve supplying a fluorine-containing precursor and a source of nitrogen-and-hydrogen-containing precursor to the remote plasma. The methods may be used to remove titanium oxide while removing little or no low-K dielectric, polysilicon, silicon nitride or titanium nitride.

Abstract translation: 描述了在异质结构上蚀刻暴露的氧化钛的方法，并且包括由含氟前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物有缺陷到基板处理区域，其中等离子体流出物可与含氮前体（例如含有胺（N））的前体结合。 因此，反应物在衬底处于升高的温度下产生蚀刻，具有高氧化钛选择性的图案化异质结构。 替代地，氧化钛蚀刻可以包括向远程等离子体供应含氟前体和含氮和氢的前体源。 该方法可用于除去少量或不含低K电介质，多晶硅，氮化硅或氮化钛的氧化钛。

公开(公告)号：US20140141621A1

公开(公告)日：2014-05-22

申请号：US13834206

申请日：2013-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： He Ren ,  Jang-Gyoo Yang ,  Jonghoon Baek ,  Anchuan Wang ,  Soonam Park ,  Saurabh Garg ,  Xinglong Chen ,  Nitin K. Ingle

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01J37/32357

Abstract: A method of etching exposed patterned heterogeneous structures is described and includes a remote plasma etch formed from a reactive precursor. The plasma power is pulsed rather than left on continuously. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents selectively remove one material faster than another. The etch selectivity results from the pulsing of the plasma power to the remote plasma region, which has been found to suppress the number of ionically-charged species that reach the substrate. The etch selectivity may also result from the presence of an ion suppression element positioned between a portion of the remote plasma and the substrate processing region.

Abstract translation: 描述了蚀刻暴露的图案化异质结构的方法，并且包括由反应性前体形成的远程等离子体蚀刻。 等离子体功率是脉冲的，而不是连续地保持。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物选择性地比另一种更快地去除一种材料。 蚀刻选择性是由等离子体功率脉冲到远程等离子体区域而产生的，这已被发现抑制了到达衬底的离子充电物质的数量。 蚀刻选择性也可能由位于远程等离子体的一部分与基板处理区域之间的离子抑制元件的存在引起。

公开(公告)号：US20140080310A1

公开(公告)日：2014-03-20

申请号：US13833033

申请日：2013-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Zhijun Chen ,  Jingchun Zhang ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01J37/32357 ,  H01L21/76802

Abstract: A method of etching exposed silicon-nitrogen-and-carbon-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-nitrogen-and-carbon-containing material. The plasma effluents react with the patterned heterogeneous structures to selectively remove silicon-nitrogen-and-carbon-containing material from the exposed silicon-nitrogen-and-carbon-containing material regions while very slowly removing selected other exposed materials. The silicon-nitrogen-and-carbon-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element controls the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-nitrogen-and-carbon-containing material at a faster rate than exposed silicon oxide or exposed silicon nitride.

Abstract translation: 描述了在图案化的异质结构上蚀刻暴露的含硅 - 氮和碳的材料的方法，并且包括由含氟前体和含氧前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与暴露的含硅 - 和碳的材料的区域反应。 等离子体流出物与图案化的异相结构反应，以便从暴露的含硅 - 碳和碳的材料区域中选择性地除去含有含氮和碳的材料，同时非常缓慢地除去所选择的其它暴露的材料。 含氮和碳的材料的选择性部分取决于位于远程等离子体和基板处理区域之间的离子抑制元件的存在。 离子抑制元件控制到达基底的离子充电物质的数量。 该方法可用于以比暴露的氧化硅或暴露的氮化硅更快的速率选择性地除去含硅 - 碳和碳的材料。