公开(公告)号：US20240337449A1

公开(公告)日：2024-10-10

申请号：US18206861

申请日：2023-06-07

Applicant: Applied Materials, Inc.

Inventor： Santosh S. Nesarkar ,  Harinath Reghunathannair ,  Sathishkumar Kummamoorthy

IPC: F28D17/04 ,  F28D17/02 ,  H01J37/32 ,  H01L21/67

CPC classification number: F28D17/04 ,  F28D17/02 ,  H01J37/32522 ,  H01J37/32834 ,  H01L21/67069 ,  H01J2237/3341

Abstract: Semiconductor processing systems and system components are described for providing regenerative heating to a foreline component. A system includes a plasma-based processing chamber. The processing chamber includes one or more fluid paths configured to circulate a heat transfer fluid. The system also includes one or more vacuum systems configured to exhaust process gases from the processing chamber, the one or more vacuum systems including one or more vacuum pumps and a foreline vent. The system includes a foreline regenerator. The foreline regenerator includes a regenerator shell at least partially surrounding the foreline vent, the regenerator shell including a heat transfer fluid input and a heat transfer fluid output, wherein the heat transfer fluid input is coupled to an output of the processing chamber.

公开(公告)号：US12112927B2

公开(公告)日：2024-10-08

申请号：US17734572

申请日：2022-05-02

Applicant: Picosun Oy

Inventor： Väinö Kilpi

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01J37/32

CPC classification number: H01J37/32715 ,  C23C16/4409 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/4586 ,  H01J37/32834 ,  H01J37/3288 ,  H01J37/32899 ,  H01J37/3222 ,  H01J2237/20235 ,  H01J2237/332 ,  H01J2237/3321 ,  H01J2237/334 ,  H01J2237/3341

Abstract: A substrate processing apparatus (100), comprising a reaction chamber (50), an outer chamber (80) at least partly surrounding the reaction chamber (50) and forming an intermediate volume (70) therebetween, and a substrate support (40) within the reaction chamber (50), comprising a hollow inner volume (42), wherein the hollow inner volume (42) and the intermediate volume (70) are in fluid communication through a channel (45) extending from the hollow inner volume (42) to the intermediate volume (70).

公开(公告)号：US20240321562A1

公开(公告)日：2024-09-26

申请号：US18680297

申请日：2024-05-31

Applicant: Tokyo Electron Limited

Inventor： Koki MUKAIYAMA ,  Maju TOMURA ,  Yoshihide KIHARA ,  Nobuyuki FUKUI

IPC: H01J37/32

CPC classification number: H01J37/32724 ,  H01J37/32119 ,  H01J37/32174 ,  H01J37/32935 ,  H01J2237/3341 ,  H01J2237/3346

Abstract: A plasma processing method includes: (a) providing a substrate on a substrate support in a chamber; (b) supplying a coolant to control a temperature of the substrate support; (c) supplying a processing gas into the chamber; and (d) in a state where (b) is being performed, generating plasma from the processing gas in the chamber by a source RF signal, and supplying a bias signal to etch the carbon-containing film. In (d), the coolant of (b) is set such that the substrate or the substrate support reaches a target temperature of −70° C. to 100° C. during plasma etching, the source RF signal in (d) is an RF signal having a power of 2 kW or more, and the bias signal in (d) is a bias RF signal having a power of 2 kW or more or a bias DC signal including a voltage pulse of 2 kV or more.

公开(公告)号：US12087591B2

公开(公告)日：2024-09-10

申请号：US17707537

申请日：2022-03-29

Applicant: Tokyo Electron Limited

Inventor： Gen Tamamushi ,  Kazuya Nagaseki

IPC: H01L21/3065 ,  H01J37/30 ,  H01J37/32 ,  H01L21/306 ,  H01L21/3213 ,  H01J37/305 ,  H01L21/67

CPC classification number: H01L21/3065 ,  H01J37/3007 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32174 ,  H01J37/32449 ,  H01J37/32568 ,  H01J37/32935 ,  H01L21/30621 ,  H01L21/32136 ,  H01J37/3053 ,  H01J2237/3341 ,  H01L21/67069 ,  H01L21/67253

Abstract: A plasma processing apparatus includes a chamber; a substrate support disposed in the chamber and including a lower electrode; an upper electrode disposed above the substrate support; an RF source that supplies an RF power to the lower electrode or the upper electrode, the RF power having a plurality of power levels during a first sequence in a repeating time period, the plurality of power levels including a first power level during a first state and a second state, and a second power level during a third state and a fourth state; and a DC source that applies a DC voltage to the lower electrode, the DC voltage having a plurality of voltage levels during the first sequence in the repeating time period.

公开(公告)号：US20240241450A1

公开(公告)日：2024-07-18

申请号：US18412449

申请日：2024-01-12

Applicant: Meta Materials Inc.

Inventor： Milad Khoshnegar Shahrestani ,  Ripon Dey

IPC: G03F7/00 ,  G03F7/30 ,  H01J37/32

CPC classification number: G03F7/704 ,  G03F7/0005 ,  G03F7/30 ,  H01J37/32082 ,  H01J37/32449 ,  H01J2237/3341

Abstract: A method for patterning a substrate involves depositing a layer of resist material on a surface of the substrate, lithographically patterning (electron beam exposing and then developing) the layer of the resist material to form a patterned resist layer having a pattern multi-faceted microscale structures with a depth profile that varies over an area of the layer of resist material, and using the patterned resist layer in an etching step to transfer the pattern of multi-faceted microscale structures from the patterned resist layer to the substrate.

公开(公告)号：US20240213033A1

公开(公告)日：2024-06-27

申请号：US18544516

申请日：2023-12-19

Applicant: ASM IP Holding B.V.

Inventor： YongGyu Han ,  Marko Tuominen ,  Shaoren Deng ,  Vincent Vandalon ,  Kranthi Kumar Vaidyula ,  Nadadur Veeraraghavan Srinath

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/027 ,  H01L21/67

CPC classification number: H01L21/31144 ,  H01J37/32899 ,  H01L21/0271 ,  H01L21/31116 ,  H01L21/67069 ,  H01J2237/3341

Abstract: The current disclosure relates to methods and assemblies for selectively etching a material from a first surface of a substrate relative to a second surface of the same substrate. The second surface of the substrate is covered by an organic polymer layer and the first surface is etched by a reactive species generated from NF3-containing plasma. The current disclosure further relates to semiconductor structures and devices formed by using the methods or assemblies of the disclosure.

公开(公告)号：US20240177971A1

公开(公告)日：2024-05-30

申请号：US18507420

申请日：2023-11-13

Applicant: SEMES CO., LTD.

Inventor： Sung Suk WI ,  Yoon Seok CHOI ,  Hanlim KANG

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32165 ,  H01J2237/3341

Abstract: Provided is a matching network module including a plurality of housings individualized to reduce cross radio frequency (RF) interference, a plurality of matching networks respectively mounted in the plurality of housings to separately perform impedance matching between a plurality of RF generators and a plasma chamber, and a common output rod connecting output terminals of the plurality of matching networks to each other.

公开(公告)号：US20240153744A1

公开(公告)日：2024-05-09

申请号：US18386618

申请日：2023-11-03

Applicant: Tokyo Electron Limited

Inventor： Atsushi TAKAHASHI ,  Maju TOMURA ,  Ryo MATSUBARA

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32715 ,  H01J37/32816 ,  H01J2237/3341

Abstract: An etching method includes: (a) providing a substrate having an etching target film and a mask on the etching target film to a substrate support in a plasma processing apparatus including a chamber, the substrate support, a plasma generator supplied with source power, and a bias electrode supplied with bias power; and (b) forming a recess by etching the etching target film. In (b), the source power and the bias power are periodically supplied in a cycle that includes a first period and a second period. In the first period, the etching target film is etched, and in the second period, the second processing gas is adsorbed onto the etching target film.

公开(公告)号：US20240145215A1

公开(公告)日：2024-05-02

申请号：US17976578

申请日：2022-10-28

Applicant: Applied Materials, Inc.

Inventor： Shreeram Jyoti DASH

IPC: H01J37/32

CPC classification number: H01J37/32146 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32128 ,  H01J2237/3341

Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for generation of a waveform for plasma processing of a substrate in a processing chamber that configured to adjust the timing and characteristics of the asymmetric voltage waveforms that are each provided to one or more electrodes or coils in a plasma processing chamber in an effort to improve the control of various characteristics of the generated plasma and control an ion energy distribution (IED) for the plasma generated ions that interact with a surface of a substrate during plasma processing. The methods and apparatus disclosed herein are configured to control and sustain a plasma formed in a processing region of the plasma processing chamber without the need for the delivery of a radio frequency (RF) waveform during processing. The ability to synchronize and control waveform characteristics, such as frequency, slope of the portions of the voltage waveform, waveform shape and applied voltage on-time during a pulse period, of the voltage pulses provided in each of the pulsed voltage waveforms applied to different electrodes and/or coils allows for an improved control of the generated plasma.

公开(公告)号：US11961714B2

公开(公告)日：2024-04-16

申请号：US17334855

申请日：2021-05-31

Applicant: LINCO TECHNOLOGY CO., LTD.

Inventor： Yi-Yuan Huang ,  Yi-Cheng Liu

IPC: H01J37/32 ,  H01J1/00 ,  H01J3/00 ,  H01J5/00

CPC classification number: H01J37/32357 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32743 ,  H01J37/32834 ,  H01J2237/3341

Abstract: A substrate processing apparatus comprises a chamber member that defines an interior volume that has an aspect ratio. The chamber member comprises a pair of laterally opposing inlet walls and a loading port. Each of the pair of laterally opposing inlet walls has an inlet port configured to receive output from a remote plasma source. The loading port is arranged between the pair of inlet walls, configured to allow passage of a substrate into the interior volume.