Positive resist composition and pattern-forming method using the same
    65.
    发明申请
    Positive resist composition and pattern-forming method using the same 有权
    正型抗蚀剂组合物和使用其的图案形成方法

    公开(公告)号:US20050064326A1

    公开(公告)日:2005-03-24

    申请号:US10941822

    申请日:2004-09-16

    Abstract: A positive resist composition includes: (A) a resin capable of increasing a solubility thereof in an alkali developer by an action of an acid; (B) a compound capable of generating a sulfonic acid represented by the following formula (I) upon irradiation with one of an actinic ray and a radiation; and (C1) at least one of an amine compound having at least an aliphatic hydroxyl group in a molecule and an amine compound having at least an ether bond in a molecule: A1A2—SO3H)n  (I) wherein A1 represents an n-valent linking group, A2 represents a single bond or a divalent aliphatic group, and A2's each may be the same or different, provided that at least one group represented by A1 or A2 contains a fluorine atom, and n represents an integer of from 2 to 4.

    Abstract translation: 正型抗蚀剂组合物包括:(A)能够通过酸的作用增加其在碱性显影剂中的溶解度的树脂; (B)在用光化学射线和辐射之一照射时能够产生由下式(I)表示的磺酸的化合物; 和(C1)分子中至少具有脂肪族羟基的胺化合物和分子中至少具有醚键的胺化合物中的至少一种:A1和Parenopenst; A2-SO3H)n(I)其中A1表示n 连接基团,A2表示单键或二价脂族基团,并且A2可以相同或不同,条件是由A1或A2表示的至少一个基团含有氟原子,n表示2的整数 到4。

    Thin film solar cell
    68.
    发明授权
    Thin film solar cell 失效
    薄膜太阳能电池

    公开(公告)号:US06512171B2

    公开(公告)日:2003-01-28

    申请号:US09758265

    申请日:2001-01-12

    CPC classification number: H01L31/075 H01L31/0392 Y02E10/548

    Abstract: A thin film solar cell comprises a p-layer, an i-layer and an n-layer formed in this order as a pin junction on a substrate in which the p-layer and the i-layer are thin silicon films each containing a crystalline component, and the p-layer contains p-type impurities of 0.2 to 8 atom % and has a thickness of 10 to 200 nm.

    Abstract translation: 薄膜太阳能电池包括在基板上形成的p层,i层和n层作为pin结,其中p层和i层是薄的硅膜,每个薄膜都含有结晶 p层含有0.2〜8原子%的p型杂质,其厚度为10〜200nm。

Patent Agency Ranking