公开(公告)号：US07750422B2

公开(公告)日：2010-07-06

申请号：US11685044

申请日：2007-03-12

Applicant: Minoru Watanabe ,  Masakazu Morishita ,  Chiori Mochizuki ,  Takamasa Ishii ,  Keiichi Nomura

Inventor： Minoru Watanabe ,  Masakazu Morishita ,  Chiori Mochizuki ,  Takamasa Ishii ,  Keiichi Nomura

IPC: H01L31/0224

CPC classification number: H01L27/12 ,  H01L27/14643 ,  H04N5/32

Abstract: In a solid state image pickup apparatus with a photodetecting device and one or more thin film transistors connected to the photodetecting device formed in one pixel, a part of the photodetecting device is formed over at least a part of the thin film transistor, and the thin film transistor is constructed by a source electrode, a drain electrode, a first gate electrode, and a second gate electrode arranged on the side opposite to the first gate electrode with respect to the source electrode and the drain electrode, and the first gate electrode is connected to the second gate electrode every pixel, thereby, suppressing an adverse effect of the photodetecting device on the TFT, a leakage at turn-off TFT, variation in a threshold voltage of the TFT due to an external electric field, and accurately transferring photo carrier to a signal processing circuit.

Abstract translation: 在具有与一个像素形成的受光器件连接的受光器件和一个以上的薄膜晶体管的固态摄像装置中，在所述薄膜晶体管的至少一部分上形成有所述受光器件的一部分， 薄膜晶体管由源电极，漏电极，第一栅电极和第二栅电极构成，第二栅电极相对于源电极和漏极布置在与第一栅电极相反的一侧，第一栅极为 连接到每个像素的第二栅电极，从而抑制光检测器件对TFT的不利影响，关断TFT处的泄漏，由于外部电场引起的TFT的阈值电压的变化，以及精确地传输照片 载波到信号处理电路。

公开(公告)号：US20090185659A1

公开(公告)日：2009-07-23

申请号：US12349733

申请日：2009-01-07

Applicant: Takamasa Ishii ,  Masakazu Morishita ,  Chiori Mochizuki ,  Minoru Watanabe ,  Keiichi Nomura

Inventor： Takamasa Ishii ,  Masakazu Morishita ,  Chiori Mochizuki ,  Minoru Watanabe ,  Keiichi Nomura

IPC: H05G1/58 ,  G01J1/44 ,  G01T1/24

CPC classification number: H04N5/3745 ,  H01L27/14632 ,  H01L27/14658 ,  H01L27/14663 ,  H04N5/35527

Abstract: Sensitivity is freely changeable to another one in correspondence to a photographing mode, and both still image photographing and moving image photographing for example which are largely different from each other in dosage of exposure to radiation and which are also different from each other in required sensitivity are carried out so as to meet that request. A source or drain electrode of a TFT 21 is connected to a signal output circuit 3 through a signal line 14a and an IC 5. A source/drain of a TFT 23 is connected to the signal output circuit 3 through a signal line 14b and the IC 5. Thus, in each pixel 6, any one of the signal lines 14a and 14b is freely selectable when a signal is read out.

Abstract translation: 灵敏度可自由地变化为与拍摄模式相对应的灵敏度，并且静止图像拍摄和例如在暴露于辐射的剂量中彼此大不相同并且在所需灵敏度上彼此不同的动态图像拍摄中， 进行，以满足这一要求。 TFT21的源极或漏极通过信号线14a和IC5连接到信号输出电路3. TFT 23的源极/漏极通过信号线14b连接到信号输出电路3，并且 因此，在每个像素6中，当读出信号时，信号线14a和14b中的任何一个可以自由地选择。

公开(公告)号：US20090040310A1

公开(公告)日：2009-02-12

申请号：US12245391

申请日：2008-10-03

Applicant: Keiichi Nomura ,  Masakazu Morishita ,  Chiori Mochizuki ,  Minoru Watanabe ,  Takamasa Ishii

Inventor： Keiichi Nomura ,  Masakazu Morishita ,  Chiori Mochizuki ,  Minoru Watanabe ,  Takamasa Ishii

IPC: H04N5/335

CPC classification number: H04N5/32 ,  H01L27/14603 ,  H01L27/14658

Abstract: A solid-state image pickup device according to the present invention has a plurality of photoelectric conversion elements and a plurality of switching elements. The photoelectric conversion element is formed above at least one switching element, and a shielding electrode layer is disposed between the switching elements and the photoelectric conversion elements. Further, a radiation image pickup device according to the present invention has a radiation conversion layer for directly converting radiation into electric charges, and a plurality of switching elements, and has the radiation conversion layer formed above one or more switching elements, and a shielding electrode layer disposed between the switching elements and the radiation conversion layer.

Abstract translation: 根据本发明的固态图像拾取装置具有多个光电转换元件和多个开关元件。 光电转换元件形成在至少一个开关元件上方，并且屏蔽电极层设置在开关元件和光电转换元件之间。 此外，根据本发明的放射线摄像装置具有用于将辐射直接转换为电荷的辐射转换层和多个开关元件，并且具有形成在一个或多个开关元件上方的辐射转换层和屏蔽电极 层之间设置在开关元件和辐射转换层之间。

公开(公告)号：US07408169B2

公开(公告)日：2008-08-05

申请号：US11428839

申请日：2006-07-06

Applicant: Takamasa Ishii ,  Minoru Watanabe

Inventor： Takamasa Ishii ,  Minoru Watanabe

IPC: G01T1/24 ,  H01L25/00

CPC classification number: G01T1/2928 ,  G01T1/026 ,  G01T1/24

Abstract: This invention is to provide a radiation image sensing apparatus capable of automatically adjusting an incident radiation dose without requiring high-speed driving while suppressing any attenuation of the radiation before detection, and a method of manufacturing the same. To accomplish this, a read TFT (1) is formed on an insulating substrate (11). The semiconductor layer (19) and n+-semiconductor layer (20) of an MIS photoelectric conversion element (2) are formed on a second insulating layer (18) that covers the read TFT (1) to be aligned with source and drain electrodes (16) functioning as lower electrodes. The semiconductor layer (21) of a TFT sensor (3) is formed to be aligned with a gate electrode (17) when viewed from the upper side. The semiconductor layers (19, 21) are formed from the same layer. The upper electrode (22) of the MIS photoelectric conversion element (2) is formed on the n+-semiconductor layer (20). Two ohmic contact layers (23) are formed on the semiconductor layer (21). Source and drain electrodes (24) are formed on the two ohmic contact layers (23), respectively.

Abstract translation: 本发明提供能够自动调整入射辐射剂量而不需要高速驱动同时抑制检测前辐射的任何衰减的辐射图像感测装置及其制造方法。 为了实现这一点，在绝缘基板（11）上形成读取TFT（1）。 MIS光电转换元件（2）的半导体层（19）和n + + - 半导体层（20）形成在覆盖读取的TFT（1）的第二绝缘层（18）上 与用作下电极的源极和漏极（16）对准。 当从上侧观察时，TFT传感器（3）的半导体层（21）形成为与栅电极（17）对齐。 半导体层（19,21）由相同的层形成。 MIS光电转换元件（2）的上电极（22）形成在n + + - 半导体层（20）上。 在半导体层（21）上形成有两个欧姆接触层（23）。 源极和漏极（24）分别形成在两个欧姆接触层（23）上。

公开(公告)号：US07332405B2

公开(公告)日：2008-02-19

申请号：US11048891

申请日：2005-02-03

Applicant: Sachiko Yabe ,  Takashi Taguchi ,  Minoru Watanabe

Inventor： Sachiko Yabe ,  Takashi Taguchi ,  Minoru Watanabe

IPC: H01L21/76

CPC classification number: H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor integrated circuit is fabricated in a substrate having a semiconductor layer and an underlying insulator layer. The fabrication process includes a step of locally oxidizing the semiconductor layer to form a field oxide, during which step the semiconductor layer is protected by a nitride film. The nitride film has both openings to permit local oxidization in the integrated circuit area, and an opening defining an alignment mark adjacent to the circuit area. The alignment mark may be formed either in the semiconductor and insulator layers, or in a part of the nitride film left after the nitride film is removed from the circuit area. In either case, the edge height of the alignment mark is not limited by the thickness of the semiconductor layer. Using the nitride layer to define both the alignment mark and the field oxide reduces the necessary number of fabrication steps.

Abstract translation: 在具有半导体层和下层绝缘体层的衬底中制造半导体集成电路。 制造工艺包括将半导体层局部氧化以形成场氧化物的步骤，在该步骤期间半导体层被氮化物膜保护。 氮化物膜具有两个开口以允许集成电路区域中的局部氧化，以及限定与电路区域相邻的对准标记的开口。 对准标记可以形成在半导体层和绝缘体层中，或者在从电路区域去除氮化物膜之后残留的氮化膜的一部分中。 在任一情况下，对准标记的边缘高度不受半导体层的厚度的限制。 使用氮化物层来限定对准标记和场氧化物两者减少了必要数量的制造步骤。

公开(公告)号：US07231018B2

公开(公告)日：2007-06-12

申请号：US11245256

申请日：2005-10-07

Applicant: Toshiko Morii ,  Masakazu Morishita ,  Osamu Tsujii ,  Minoru Watanabe ,  Takamasa Ishii

Inventor： Toshiko Morii ,  Masakazu Morishita ,  Osamu Tsujii ,  Minoru Watanabe ,  Takamasa Ishii

IPC: H05G1/42 ,  H05G1/64

CPC classification number: G01T1/2018 ,  H01L27/14658 ,  H01L27/14663

Abstract: According to a radiation imaging apparatus, any separate AEC sensor need not be prepared. Additionally, the apparatus main body can be made compact. To accomplish this, the radiation imaging apparatus has a first optical conversion element that converts incident radiation into an electrical signal, and generates image information on the basis of the electrical signal output from the first optical conversion element. Below a portion that is aligned to the gap between the first optical conversion elements, a plurality of second optical conversion elements which detect the incident amount of the radiation from the gap are formed. Exposure control for the radiation or control of the optical conversion elements is executed on the basis of the detection result by the second optical conversion element.

Abstract translation: 根据辐射成像装置，不需要准备任何单独的AEC传感器。 另外，可以使装置主体紧凑。 为了实现这一点，辐射成像装置具有将入射辐射转换为电信号的第一光转换元件，并且基于从第一光转换元件输出的电信号生成图像信息。 在与第一光转换元件之间的间隙对准的部分下面，形成多个第二光转换元件，其检测来自间隙的辐射的入射量。 基于第二光转换元件的检测结果来进行光转换元件的放射或控制的曝光控制。

公开(公告)号：US07205568B2

公开(公告)日：2007-04-17

申请号：US10538774

申请日：2004-02-10

Applicant: Minoru Watanabe ,  Masakazu Morishita ,  Chiori Mochizuki ,  Takamasa Ishii ,  Keiichi Nomura

Inventor： Minoru Watanabe ,  Masakazu Morishita ,  Chiori Mochizuki ,  Takamasa Ishii ,  Keiichi Nomura

IPC: H01L21/10

CPC classification number: H01L27/12 ,  H01L27/14643 ,  H04N5/32

Abstract: In a solid state image pickup apparatus with a photodetecting device and one or more thin film transistors connected to the photodetecting device formed in one pixel, a part of the photodetecting device is formed over at least a part of the thin film transistor, and the thin film transistor is constructed by a source electrode, a drain electrode, a first gate electrode, and a second gate electrode arranged on the side opposite to the first gate electrode with respect to the source electrode and the drain electrode, and the first gate electrode is connected to the second gate electrode every pixel, thereby, suppressing an adverse effect of the photodetecting device on the TFT, a leakage at turn-off TFT, variation in a threshold voltage of the TFT due to an external electric field, and accurately transferring photo carrier to a signal processing circuit.

Abstract translation: 在具有与一个像素形成的受光器件连接的受光器件和一个以上的薄膜晶体管的固态摄像装置中，在所述薄膜晶体管的至少一部分上形成有所述受光器件的一部分， 薄膜晶体管由源电极，漏电极，第一栅电极和第二栅电极构成，第二栅电极相对于源电极和漏极布置在与第一栅电极相反的一侧，第一栅极为 连接到每个像素的第二栅电极，从而抑制光检测器件对TFT的不利影响，关断TFT处的泄漏，由于外部电场引起的TFT的阈值电压的变化，以及精确地传输照片 载波到信号处理电路。

公开(公告)号：US07205547B2

公开(公告)日：2007-04-17

申请号：US11147182

申请日：2005-06-08

Applicant: Takamasa Ishii ,  Masakazu Morishita ,  Chiori Mochizuki ,  Minoru Watanabe ,  Keiichi Nomura

Inventor： Takamasa Ishii ,  Masakazu Morishita ,  Chiori Mochizuki ,  Minoru Watanabe ,  Keiichi Nomura

IPC: H01L27/146 ,  G01T1/20

CPC classification number: H01L27/14636 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14663 ,  H01L27/14676 ,  H01L27/14687

Abstract: A radiographic imaging apparatus, comprising: a photoelectric conversion substrate including a pixel area where there are arranged a plurality of pixels each formed of a photoelectric conversion element and a switching element connected to the photoelectric conversion element in a matrix formed on an insulating substrate, a bias line for applying a bias to the photoelectric conversion element, a gate line for supplying a driving signal to the switching element, and a signal line for reading electric charges converted in the photoelectric conversion element; a wavelength conversion element for converting radiation to light that can be detected by the photoelectric conversion element, the wavelength conversion element being disposed according to a region including the pixel area; and connection wiring having a photoelectric conversion layer connected to at least a plurality of lines of one type, that one type being, the bias lines, the signal lines, and the gate lines, wherein at least a part of the connection wiring is arranged between the region on the insulating substrate and an edge of the insulating substrate. With this arrangement, it becomes possible to provide a panel for a radiographic imaging apparatus and a radiographic imaging apparatus free from deterioration in device performance and device destruction caused by a static electricity even if a substrate is electrically charged in a manufacturing process.

Abstract translation: 一种放射线摄影成像装置，包括：光电转换基板，包括像素区域，其中排列有由光电转换元件形成的多个像素和连接到形成在绝缘基板上的矩阵中的光电转换元件的开关元件， 用于向光电转换元件施加偏压的偏置线，用于向开关元件提供驱动信号的栅极线和用于读取在光电转换元件中转换的电荷的信号线; 波长转换元件，用于将辐射转换成能够由光电转换元件检测的光，所述波长转换元件根据包括像素区域的区域设置; 以及连接布线，其具有连接到至少一种类型的多条线的光电转换层，所述光电转换层的一种类型是偏置线，信号线和栅极线，其中至少一部分连接布线布置在 绝缘基板上的区域和绝缘基板的边缘。 利用这种布置，即使在制造过程中基板被充电，也可以提供一种用于放射线照相成像装置和放射线照相成像装置的面板，其不会因静电而导致的装置性能和装置破坏的劣化。

公开(公告)号：US20070007458A1

公开(公告)日：2007-01-11

申请号：US11456155

申请日：2006-07-07

Applicant: Chiori Mochizuki ,  Keiichi Nomura ,  Minoru Watanabe ,  Takamasa Ishii

Inventor： Chiori Mochizuki ,  Keiichi Nomura ,  Minoru Watanabe ,  Takamasa Ishii

IPC: G01T1/24 ,  H05G1/64 ,  H01L27/146 ,  H01L25/00 ,  H01L27/00

CPC classification number: H01L27/14603 ,  G01T1/2928 ,  H01L27/124 ,  H01L27/14632 ,  H01L27/14663 ,  H01L31/1136

Abstract: A conversion apparatus includes pixels including switching elements provided on an insulating substrate and conversion elements disposed over the switching elements and connected to the switching elements. Conductive lines are coupled to the pixels and have terminal elements for providing a connection to an external circuit. The terminal elements are disposed in a metal layer that is formed over the conversion elements. The conversion apparatus further includes a transparent conductive layer covering surfaces of the terminal elements, and a protective layer covering edges of the terminal elements and having openings.

Abstract translation: 一种转换装置包括像素，其包括设置在绝缘基板上的开关元件和设置在开关元件上并连接到开关元件的转换元件。 导电线耦合到像素并且具有用于提供到外部电路的连接的端子元件。 端子元件设置在形成在转换元件上的金属层中。 转换装置还包括覆盖端子元件的表面的透明导电层和覆盖端子元件边缘并具有开口的保护层。

公开(公告)号：US20060105490A1

公开(公告)日：2006-05-18

申请号：US11235276

申请日：2005-09-27

Applicant: Minoru Watanabe

Inventor： Minoru Watanabe

IPC: H01L21/00

CPC classification number: H01L27/14685 ,  H01L27/14627 ,  H01L31/02327

Abstract: The present invention provides a method for manufacturing a microlens in a semiconductor substrate having a first surface and a second surface, comprising the steps of preparing the semiconductor substrate, forming a first resist layer approximately cylindrical in form on the first surface of the semiconductor substrate, reflowing the first resist layer by heat treatment while holding the semiconductor substrate in such a manner that the first surface is normal to a vertical line and placed below the second surface, thereby to deform the first resist layer into a second resist layer approximately hemispherical in form, and simultaneously etching the second resist layer and the semiconductor substrate by means of anisotropic etching to form the corresponding lens in the semiconductor substrate.

Abstract translation: 本发明提供一种用于制造具有第一表面和第二表面的半导体衬底中的微透镜的方法，包括以下步骤：制备半导体衬底，在半导体衬底的第一表面上形成大致圆柱形的第一抗蚀剂层， 通过热处理来回流第一抗蚀剂层，同时以使第一表面垂直于垂直线并放置在第二表面下方的方式保持半导体衬底，从而使第一抗蚀剂层变形为大致半球形的第二抗蚀剂层 并且通过各向异性蚀刻同时蚀刻第二抗蚀剂层和半导体衬底，以在半导体衬底中形成相应的透镜。