公开(公告)号：US20170104135A1

公开(公告)日：2017-04-13

申请号：US15291169

申请日：2016-10-12

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Grigory Simin ,  Alexander Dobrinsky

IPC: H01L33/48 ,  H01L33/62 ,  H01L33/64 ,  H01L27/12 ,  H01L27/15

CPC classification number: H01L33/486 ,  H01L27/1214 ,  H01L27/156 ,  H01L33/62 ,  H01L33/642 ,  H01L2224/16225 ,  H01L2933/0016 ,  H01L2933/0066 ,  H01L2933/0075

Abstract: A mounting structure for mounting a set of optoelectronic devices is provided. A mounting structure for a set of optoelectronic devices can include: a body formed of an insulating material; and a heatsink element embedded within the body. A heatsink can be located adjacent to the mounting structure. The set of optoelectronic devices can be mounted on a side of the mounting structure opposite of the heatsink.

公开(公告)号：US20170104132A1

公开(公告)日：2017-04-13

申请号：US15391922

申请日：2016-12-28

Applicant: Sensor Electronic Technology, Inc.

Inventor： Rakesh Jain ,  Wenhong Sun ,  Jinwei Yang ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Remigijus Gaska ,  Michael Shur

IPC: H01L33/32 ,  H01L33/12 ,  H01L33/06 ,  H01L33/00

CPC classification number: H01L33/32 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/151 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/025 ,  H01L33/04 ,  H01L33/06 ,  H01L33/12 ,  H01L33/20

Abstract: A solution for fabricating a semiconductor structure is provided. The semiconductor structure includes a plurality of semiconductor layers grown over a substrate using a set of epitaxial growth periods. During each epitaxial growth period, a first semiconductor layer having one of: a tensile stress or a compressive stress is grown followed by growth of a second semiconductor layer having the other of: the tensile stress or the compressive stress directly on the first semiconductor layer.

公开(公告)号：US20170104131A1

公开(公告)日：2017-04-13

申请号：US15390575

申请日：2016-12-26

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/22 ,  H01L33/14 ,  H01L33/62 ,  H01L33/00 ,  H01L33/32 ,  H01L33/24

CPC classification number: H01L33/22 ,  G06F17/5009 ,  G06F17/5045 ,  H01L33/007 ,  H01L33/10 ,  H01L33/20 ,  H01L33/32 ,  H01L33/62 ,  H01L2933/0083 ,  Y10T29/49

Abstract: A profiled surface for improving the propagation of radiation through an interface is provided. The profiled surface includes a set of large roughness components providing a first variation of the profiled surface having a characteristic scale approximately an order of magnitude larger than a target wavelength of the radiation. The set of large roughness components can include a series of truncated shapes. The profiled surface also includes a set of small roughness components superimposed on the set of large roughness components and providing a second variation of the profiled surface having a characteristic scale on the order of the target wavelength of the radiation.

公开(公告)号：US20170104129A1

公开(公告)日：2017-04-13

申请号：US15389479

申请日：2016-12-23

Applicant: Sensor Electronic Technology, Inc.

Inventor： Rakesh Jain ,  Wenhong Sun ,  Jinwei Yang ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/06 ,  H01L33/12 ,  H01L33/24 ,  H01L33/00 ,  H01L33/32 ,  H01L33/22

CPC classification number: H01L33/06 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L29/2003 ,  H01L29/518 ,  H01L29/7786 ,  H01L33/12 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L2933/0083 ,  H01L2933/0091

Abstract: A device having a layer with a patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers with a high concentration of aluminum, is provided. The patterned surface can include a substantially flat top surface and a plurality of stress reducing regions, such as openings. The substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the stress reducing regions can have a characteristic size between approximately 0.1 microns and approximately five microns and a depth of at least 0.2 microns. A layer of group-III nitride material can be grown on the first layer and have a thickness at least twice the characteristic size of the stress reducing regions.

公开(公告)号：US20170100496A1

公开(公告)日：2017-04-13

申请号：US15388506

申请日：2016-12-22

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Maxim S. Shatalov ,  Timothy James Bettles ,  Yuri Bilenko ,  Alexander Dobrinsky ,  Remigijus Gaska

IPC: A61L2/10 ,  A23L3/28 ,  A61L2/24 ,  F25D11/00 ,  F25D17/04

CPC classification number: A61L2/10 ,  A23L3/003 ,  A23L3/28 ,  A23V2002/00 ,  A61L2/18 ,  A61L2/24 ,  A61L2/28 ,  A61L2202/11 ,  A61L2202/14 ,  A61L2202/18 ,  A61L2202/23 ,  F25D11/00 ,  F25D17/042 ,  F25D2317/0417 ,  F25D2400/361 ,  F25D2700/06

Abstract: Ultraviolet radiation is directed within an area. The target wavelength ranges and/or target intensity ranges of the ultraviolet radiation sources can correspond to at least one of a plurality of selectable operating configurations including a sterilization operating configuration and a preservation operating configuration.

公开(公告)号：US09595634B2

公开(公告)日：2017-03-14

申请号：US15200313

申请日：2016-07-01

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Remigijus Gaska ,  Jinwei Yang

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/32 ,  H01L33/22 ,  H01S5/343 ,  H01L33/10 ,  H01S5/125 ,  H01S5/30 ,  B82Y10/00 ,  H01L21/02 ,  H01L29/15 ,  H01L29/778 ,  H01L29/20

CPC classification number: H01L33/06 ,  B82Y10/00 ,  B82Y20/00 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/15 ,  H01L29/2003 ,  H01L29/778 ,  H01L33/0025 ,  H01L33/10 ,  H01L33/22 ,  H01L33/32 ,  H01L33/325 ,  H01L33/405 ,  H01S5/125 ,  H01S5/3054 ,  H01S5/3063 ,  H01S5/343 ,  H01S5/34333 ,  H01S5/34346

Abstract: A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. In this case, the barriers can include both transparent regions, which are configured to reduce an amount of radiation that is absorbed in the layer, and higher conductive regions, which are configured to keep the voltage drop across the layer within a desired range.

Abstract translation: 提供了一种包括一个或多个具有横向区域的层，该层被配置为有助于辐射通过该层的传输和被配置为促进流过该层的电流的横向区域。 该层可以包括短期超晶格，其包括与井交替的障碍物。 在这种情况下，障碍物可以包括被配置为减少在层中吸收的辐射量的透明区域以及被配置为将跨越层的电压降保持在期望范围内的较高导电区域。

公开(公告)号：US09572903B2

公开(公告)日：2017-02-21

申请号：US14883804

申请日：2015-10-15

Applicant: Sensor Electronic Technology, Inc.

Inventor： Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska ,  Timothy James Bettles

IPC: A61L2/10 ,  A61L2/24 ,  A61L9/20 ,  G01N21/64 ,  A61L9/00 ,  G01J1/42

CPC classification number: A61L2/10 ,  A41D13/002 ,  A61L2/24 ,  A61L9/00 ,  A61L9/20 ,  A61L2202/14 ,  A61L2209/111 ,  A61L2209/14 ,  G01J1/429 ,  G01N21/6456 ,  G01N21/6486 ,  G01N2201/0221 ,  G09B5/06 ,  G09B19/24

Abstract: A system capable of detecting and/or sterilizing surface(s) of an object using ultraviolet radiation is provided. The system can include a disinfection chamber and/or handheld ultraviolet unit, which includes ultraviolet sources for inducing fluorescence in a contaminant and/or sterilizing a surface of an object. The object can comprise a protective suit, which is worn by a user and also can include ultraviolet sources for disinfecting air prior to the air entering the protective suit. The system can be implemented as a multi-tiered system for protecting the user and others from exposure to the contaminant and sterilizing the protective suit after exposure to an environment including the contaminant.

Abstract translation: 提供一种能够使用紫外线辐射来检测和/或消毒物体表面的系统。 该系统可以包括消毒室和/或手持式紫外线单元，其包括用于在污染物中诱导荧光和/或消毒物体表面的紫外线源。 该物体可以包括用户佩戴的防护服，并且还可以包括用于在空气进入防护服之前对空气进行消毒的紫外线源。 该系统可以实现为多层系统，用于在暴露于包括污染物的环境之后，保护使用者和其他人免受暴露于污染物和对防护服进行消毒。

公开(公告)号：US20170005246A1

公开(公告)日：2017-01-05

申请号：US15198569

申请日：2016-06-30

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Alexander Dobrinsky

IPC: H01L33/62 ,  H01L33/10 ,  H01L33/42 ,  H01L33/20 ,  H01L33/32 ,  H01L33/00

CPC classification number: H01L33/42 ,  H01L24/00 ,  H01L31/00 ,  H01L33/10 ,  H01L33/32 ,  H01L33/40 ,  H01L2933/0016 ,  H01S5/0224 ,  H01S5/0421 ,  H01S5/34333

Abstract: A multi-layered contact to a semiconductor structure and a method of making is described. In one embodiment, the contact includes a discontinuous Chromium layer formed over the semiconductor structure. A discontinuous Titanium layer is formed directly on the Chromium layer, wherein portions of the Titanium layer extend into at least some of the discontinuous sections of the Chromium layer. A discontinuous Aluminum layer is formed directly on the Chromium layer, wherein portions of the Aluminum layer extend into at least some of the discontinuous sections of the Titanium layer and the Chromium layer.

Abstract translation: 描述了与半导体结构的多层接触和制造方法。 在一个实施例中，触点包括形成在半导体结构上的不连续的铬层。 直接在铬层上形成不连续的钛层，其中钛层的部分延伸到铬层的至少一些不连续部分。 直接在铬层上形成不连续的铝层，其中铝层的部分延伸到钛层和铬层的至少一些不连续部分。

公开(公告)号：US09537054B2

公开(公告)日：2017-01-03

申请号：US14686845

申请日：2015-04-15

Applicant: Sensor Electronic Technology, Inc.

Inventor： Daniel D. Billingsley ,  Robert M. Kennedy ,  Wenhong Sun ,  Rakesh Jain ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/06 ,  H01L33/32 ,  H01L33/00 ,  H01L21/02 ,  H01L33/20 ,  H01L33/24 ,  H01L29/15 ,  H01L29/20

CPC classification number: H01L33/12 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/155 ,  H01L29/2003 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32 ,  H01L2224/16225

Abstract: A heterostructure for use in fabricating an optoelectronic device is provided. The heterostructure includes a layer, such as an n-type contact or cladding layer, that includes thin sub-layers inserted therein. The thin sub-layers can be spaced throughout the layer and separated by intervening sub-layers fabricated of the material for the layer. The thin sub-layers can have a distinct composition from the intervening sub-layers, which alters stresses present during growth of the heterostructure.

Abstract translation: 提供了用于制造光电子器件的异质结构。 异质结构包括诸如n型接触或包覆层的层，其包括插入其中的薄子层。 薄的子层可以遍及整个层间隔开，并由用于该层的材料制成的中间子层隔开。 薄的子层可以具有与插入的子层不同的组成，其在异质结构的生长期间改变应力存在。

公开(公告)号：US20160355947A1

公开(公告)日：2016-12-08

申请号：US15173660

申请日：2016-06-05

Applicant: Sensor Electronic Technology, Inc.

Inventor： Alexander Dobrinsky ,  Michael Shur

IPC: C30B25/16 ,  C30B25/12 ,  C23C16/458 ,  C23C16/46 ,  C23C16/455 ,  C23C16/52 ,  C30B25/10 ,  C30B25/14

CPC classification number: C30B25/16 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/52 ,  C30B25/10

Abstract: An approach for heating a susceptor during an epitaxial growth process of semiconductor layers in an epitaxial growth chamber is described. A main heating unit heats a region of the susceptor supporting a wafer. An auxiliary heating unit supports the main heating unit in heating the susceptor when the temperature distribution over the surface of the wafer fails to satisfy a target temperature distribution. The control unit monitors the temperature distribution over the surface of the wafer while the susceptor is heated by both the main heating unit and the auxiliary heating unit and adjusts at least one of a multitude of operating parameters for the auxiliary heating unit in response to determining that the temperature distribution over the surface of the wafer while the susceptor is heated by the main heating unit and the auxiliary heating unit is failing to satisfy the target temperature distribution.

Abstract translation: 描述了在外延生长室中的半导体层的外延生长过程期间加热基座的方法。 主加热单元加热支撑晶片的基座的区域。 当晶片表面上的温度分布不能满足目标温度分布时，辅助加热单元支撑主加热单元加热基座。 所述控制单元监测所述晶片表面上的温度分布，同时所述基座被所述主加热单元和所述辅助加热单元加热，并响应于确定所述辅助加热单元的多个操作参数中的至少一个而调整 当基座被主加热单元和辅助加热单元加热时，晶片表面上的温度分布不能满足目标温度分布。