公开(公告)号：US10177534B2

公开(公告)日：2019-01-08

申请号：US15139813

申请日：2016-04-27

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Michael Shur ,  Alexander Dobrinsky

IPC: H01S5/00 ,  H01S5/30 ,  H01S5/04 ,  H01S5/323 ,  H01S5/06 ,  H01S5/20 ,  H01S5/22

Abstract: A device is provided in which a light emitting semiconductor structure is excited by an electron beam that impacts a region of a lateral surface of the light emitting semiconductor structure at an angle to the normal of the lateral surface that is non-zero. The non-zero angle can be configured to cause excitation in a desired region of the light emitting semiconductor structure. The device can include wave guiding layer(s) and/or other features to improve the light generation and/or operation of the device.

公开(公告)号：US10172968B2

公开(公告)日：2019-01-08

申请号：US15670750

申请日：2017-08-07

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Maxim S. Shatalov ,  Timothy James Bettles ,  Yuri Bilenko ,  Saulius Smetona ,  Alexander Dobrinsky ,  Remigijus Gaska

IPC: A61L2/10 ,  A23L3/28 ,  F25D17/04

Abstract: Ultraviolet radiation is directed within a storage area formed of a plurality of layers including an outer ultraviolet reflective layer, an inner ultraviolet transparent layer, and a layer located between the outer ultraviolet reflective layer and the inner ultraviolet transparent layer. The refractive index of the layer between the outer ultraviolet reflective layer and the inner ultraviolet transparent layer is less than the refractive index of the inner ultraviolet transparent layer. A set of ultraviolet radiation sources generate ultraviolet radiation directed at a set of items located within the storage area.

公开(公告)号：US10158044B2

公开(公告)日：2018-12-18

申请号：US15391922

申请日：2016-12-28

Applicant: Sensor Electronic Technology, Inc.

Inventor： Rakesh Jain ,  Wenhong Sun ,  Jinwei Yang ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Remigijus Gaska ,  Michael Shur

IPC: H01L31/072 ,  H01L33/32 ,  H01L33/00 ,  H01L33/12 ,  H01L33/06 ,  H01L21/02 ,  H01L29/15 ,  H01L33/02 ,  H01L33/04 ,  H01L33/20

Abstract: A solution for fabricating a semiconductor structure is provided. The semiconductor structure includes a plurality of semiconductor layers grown over a substrate using a set of epitaxial growth periods. During each epitaxial growth period, a first semiconductor layer having one of: a tensile stress or a compressive stress is grown followed by growth of a second semiconductor layer having the other of: the tensile stress or the compressive stress directly on the first semiconductor layer.

公开(公告)号：US10153396B2

公开(公告)日：2018-12-11

申请号：US15857853

申请日：2017-12-29

Applicant: Sensor Electronic Technology, Inc.

Inventor： Rakesh Jain ,  Wenhong Sun ,  Jinwei Yang ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L27/15 ,  H01L31/0336 ,  H01L33/06 ,  H01L21/02 ,  H01L29/778 ,  H01L33/12 ,  H01L33/24 ,  H01L33/32 ,  H01L29/20 ,  H01L29/51 ,  H01L33/22

Abstract: A device having a layer with a patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers with a high concentration of aluminum, is provided. The patterned surface can include a substantially flat top surface and a plurality of stress reducing regions, such as openings. The substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the stress reducing regions can have a characteristic size between approximately 0.1 microns and approximately five microns and a depth of at least 0.2 microns. A layer of group-III nitride material can be grown on the first layer and have a thickness at least twice the characteristic size of the stress reducing regions.

公开(公告)号：US20180264151A1

公开(公告)日：2018-09-20

申请号：US15982611

申请日：2018-05-17

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Maxim S. Shatalov ,  Timothy James Bettles ,  Yuri Bilenko ,  Saulius Smetona ,  Alexander Dobrinsky ,  Remigijus Gaska

IPC: A61L2/10 ,  F25D17/04 ,  A23L3/28

CPC classification number: A61L2/10 ,  A23L3/28 ,  A61L2202/14 ,  A61L2202/21 ,  F25D17/042 ,  F25D2317/0417

Abstract: Ultraviolet radiation is directed within an area at target wavelengths, target intensities, a target temporal distribution, and/or a target spatial distribution. The target attribute(s) of the ultraviolet radiation can correspond to at least one of a plurality of selectable operating configurations including a storage life preservation operating configuration, a disinfection operating configuration, an ethylene decomposition operating configuration, and/or the like.

公开(公告)号：US20180264150A1

公开(公告)日：2018-09-20

申请号：US15982531

申请日：2018-05-17

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Maxim S. Shatalov ,  Timothy James Bettles ,  Yuri Bilenko ,  Saulius Smetona ,  Alexander Dobrinsky ,  Remigijus Gaska ,  Igor Agafonov

IPC: A61L2/10 ,  H04N5/33 ,  G01N27/12 ,  G01G19/52 ,  H04N7/18

CPC classification number: A61L2/10 ,  A61L2202/14 ,  A61L2202/21 ,  F25D17/042 ,  F25D2317/0417 ,  G01G19/52 ,  G01N27/121 ,  H04N5/332 ,  H04N7/183

Abstract: Ultraviolet radiation is directed within an area. Items located within the area and/or one or more conditions of the area are monitored over a period of time. Based on the monitoring, ultraviolet radiation sources are controlled by adjusting a direction, an intensity, a pattern, and/or a spectral power of the ultraviolet radiation generated by the ultraviolet radiation source. Adjustments to the ultraviolet radiation source(s) can correspond to one of a plurality of selectable operating configurations including a storage life preservation operating configuration, a disinfection operating configuration, and an ethylene decomposition operating configuration.

公开(公告)号：US20180248072A1

公开(公告)日：2018-08-30

申请号：US15962215

申请日：2018-04-25

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/00 ,  H01L33/12 ,  H01L33/24 ,  H01L33/14 ,  H01L33/32 ,  H01L33/06 ,  H01L33/02

CPC classification number: H01L33/0025 ,  H01L33/007 ,  H01L33/02 ,  H01L33/025 ,  H01L33/06 ,  H01L33/12 ,  H01L33/14 ,  H01L33/24 ,  H01L33/32 ,  H01S5/021 ,  H01S5/0213 ,  H01S5/32341 ,  H01S2301/173

Abstract: A light emitting heterostructure including a partially relaxed semiconductor layer is provided. The partially relaxed semiconductor layer can be included as a sublayer of a contact semiconductor layer of the light emitting heterostructure. A dislocation blocking structure also can be included adjacent to the partially relaxed semiconductor layer.

公开(公告)号：US10032956B2

公开(公告)日：2018-07-24

申请号：US15495192

申请日：2017-04-24

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Rakesh Jain ,  Jinwei Yang ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/22 ,  H01L33/12 ,  H01L33/32 ,  H01L33/00 ,  H01L33/10 ,  H01L33/06 ,  H01L33/24

CPC classification number: H01L33/22 ,  G06F17/5068 ,  G06F2217/12 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02617 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/06 ,  H01L33/10 ,  H01L33/12 ,  H01L33/24 ,  H01L33/32 ,  H01L2224/16225 ,  Y02P90/265

Abstract: A patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers, is provided. The patterned surface can include a set of substantially flat top surfaces and a plurality of openings. Each substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the openings can have a characteristic size between approximately 0.1 micron and five microns. One or more of the substantially flat top surfaces can be patterned based on target radiation.

公开(公告)号：US09999782B2

公开(公告)日：2018-06-19

申请号：US14747235

申请日：2015-06-23

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Alexander Dobrinsky ,  Maxim S. Shatalov

IPC: G01J1/42 ,  A61N5/06 ,  A61L2/00

CPC classification number: A61N5/0601 ,  A61L2/0047 ,  A61N5/0624 ,  A61N2005/0609 ,  A61N2005/0651 ,  A61N2005/0661

Abstract: A system for sterilizing at least one surface of an object is provided. The system includes a set of ultraviolet radiation sources and a set of wave guiding structures configured to direct ultraviolet radiation having a set of target attributes to a desired location on at least one surface of the object. The set of wave guiding structures can include at least one ultraviolet reflective surface having an ultraviolet reflection coefficient of at least thirty percent. Furthermore, the system can include a computer system for operating the ultraviolet radiation sources to deliver a target dose of ultraviolet radiation to the at least one target surface of the object.

公开(公告)号：US20180117354A1

公开(公告)日：2018-05-03

申请号：US15856950

申请日：2017-12-28

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Alexander Dobrinsky ,  Maxim S. Shatalov

IPC: A61N5/06 ,  A61L2/00

Abstract: A system for sterilizing at least one surface of an object is provided. The system includes a set of ultraviolet radiation sources and a set of wave guiding structures configured to direct ultraviolet radiation having a set of target attributes to a desired location on at least one surface of the object. The set of wave guiding structures can include at least one ultraviolet reflective surface having an ultraviolet reflection coefficient of at least thirty percent. Furthermore, the system can include a computer system for operating the ultraviolet radiation sources to deliver a target dose of ultraviolet radiation to the at least one target surface of the object.