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公开(公告)号：US09891451B2
公开(公告)日：2018-02-13
申请号：US15238688
申请日：2016-08-16
Applicant: SiFotonics Technologies Co., Ltd.
Inventor： Tuo Shi , Tzung-I Su , Yongbo Shao , Dong Pan
CPC classification number: G02F1/025 , G02B6/2813 , G02F1/2257 , G02F2001/0152 , G02F2001/212 , G02F2201/063 , G02F2203/15
Abstract: A ring optical modulator includes a SOI substrate, including at least first and second top silicon layers, and a silicon-based ring resonator formed on the SOI substrate. The silicon-based ring resonator includes first and second top silicon layers, a thin dielectric gate layer disposed between the top silicon layers, first and second electric contacts, and first rib-type waveguide and ring-shape rib-type waveguide formed on the second top silicon layer. The thin dielectric layer includes a first side in contact with the first top silicon layer and a second side in contact with the second top silicon layer. With electric signals applied on the electric contacts, free carriers accumulate, deplete or invert within the top silicon layers on the first and second sides of the thin dielectric gate layer beneath the ring-shape rib-type waveguide, simultaneously, and a refractive index of the ring-shape rib-type waveguide confining optical fields is modulated.
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公开(公告)号：US09885936B2
公开(公告)日：2018-02-06
申请号：US15605637
申请日：2017-05-25
Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Inventor： Masataka Watanabe , Naoya Kono
CPC classification number: G02F1/2257 , G02F2001/212 , G02F2201/063
Abstract: A Mach-Zehnder modulator includes: a support having a principal surface, the principal surface having a first area, a second area, and a third area; a first structure including first and second semiconductor mesas disposed on the first and second areas, respectively; a second structure including a first strip-shaped semiconductor region on the second area, a second strip-shaped semiconductor region on the third area, and a first strip-shaped void and a second strip-shaped void defining the first and second strip-shaped semiconductor regions; a first electrode disposed on the first semiconductor mesa in the first area, the first strip-shaped semiconductor region of the second structure being disposed between the support and the second semiconductor mesa of the first structure in the second area, and the first and second semiconductor mesas, and the first and second strip-shaped semiconductor regions being arranged to constitute a first arm waveguide of the Mach-Zehnder modulator.
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公开(公告)号：US09864215B1
公开(公告)日：2018-01-09
申请号：US15658871
申请日：2017-07-25
Applicant: FUJIKURA LTD.
Inventor： Shinichi Sakamoto , Kazuhiro Goi , Norihiro Ishikura
CPC classification number: G02F1/025 , G02F1/2255 , G02F1/2257 , G02F2201/063 , G02F2201/127
Abstract: Provided is a substrate-type optical waveguide, having a phase modulation function, (i) in which a reflection of a signal to be inputted via a coplanar line is restrained and (ii) which consumes less power. In a case where the substrate-type optical waveguide is partitioned into a plurality of sections by cross sections orthogonal to a direction in which light propagates through a core, a local capacitance in each of the plurality of sections gradually increases as a distance from an entrance end surface increases.
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公开(公告)号：US20170343881A1
公开(公告)日：2017-11-30
申请号：US15605637
申请日：2017-05-25
Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Inventor： MASATAKA WATANABE , NAOYA KONO
CPC classification number: G02F1/2257 , G02F2001/212 , G02F2201/063
Abstract: A Mach-Zehnder modulator includes: a support having a principal surface, the principal surface having a first area, a second area, and a third area; a first structure including first and second semiconductor mesas disposed on the first and second areas, respectively; a second structure including a first strip-shaped semiconductor region on the second area, a second strip-shaped semiconductor region on the third area, and a first strip-shaped void and a second strip-shaped void defining the first and second strip-shaped semiconductor regions; a first electrode disposed on the first semiconductor mesa in the first area, the first strip-shaped semiconductor region of the second structure being disposed between the support and the second semiconductor mesa of the first structure in the second area, and the first and second semiconductor mesas, and the first and second strip-shaped semiconductor regions being arranged to constitute a first arm waveguide of the Mach-Zehnder modulator.
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公开(公告)号：US09778542B2
公开(公告)日：2017-10-03
申请号：US15318593
申请日：2015-06-29
Applicant: DOLBY LABORATORIES LICENSING CORPORATION
Inventor： Gregory David Miller , Gennady Imeshev
CPC classification number: G02F1/365 , G02B6/12004 , G02B6/13 , G02B2006/1204 , G02B2006/12045 , G02B2006/12054 , G02B2006/12097 , G02B2006/121 , G02F1/353 , G02F1/3551 , G02F1/377 , G02F2201/063 , G02F2202/20 , H01S5/0092 , H01S5/4012 , H01S5/4025
Abstract: Novel methods and systems for waveguide fabrication and design are disclosed. Designs are described for fabricating ridge, buried and hybrid waveguides by a femtosecond pulsed laser. A laser system may combine a diode bar, a wavelength combiner and a waveguide. The waveguide may convert the electromagnetic radiation of an infrared laser into that the visible-wavelength range.
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Patent Agency Ranking
公开(公告)号：US09703125B2
公开(公告)日：2017-07-11
申请号：US14777791
申请日：2013-11-28
Applicant: NEC Corporation
Inventor： Junichi Fujikata , Shigeki Takahashi
CPC classification number: G02F1/025 , G02F1/2255 , G02F1/2257 , G02F2001/0113 , G02F2001/0152 , G02F2001/212 , G02F2201/063
Abstract: Provided is a silicon-based electro-optic modulator which is small in size and capable of high speed operation. A first silicon semiconductor layer (120) doped to exhibit a first type of conductivity and a second semiconductor layer (160) doped to exhibit a second type of conductivity are at least partly stacked together, and a relatively thin dielectric (150) is formed at the interface between the stacked first and second silicon semiconductor layers (120, 160). The first silicon semiconductor layer (120) has a rib waveguide shape (130) comprising a rib portion (131) and slab portions (132). A first heavily doped region (140) formed by a high concentration doping process is arranged at a location, in the first silicon semiconductor layer (120), neighboring to each of the slab portions (132). The first heavily doped region (140) has almost the same height as that of the rib portion (131) of the rib waveguide (130).
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公开(公告)号：US09122085B2
公开(公告)日：2015-09-01
申请号：US12944946
申请日：2010-11-12
Applicant: Mahmoud S. Rasras
Inventor： Mahmoud S. Rasras
CPC classification number: G02F1/0147 , G02F1/2257 , G02F2001/212 , G02F2201/063 , G02F2203/48
Abstract: An apparatus includes a conductive or semiconductive substrate and a dielectric layer located directly thereon. A semiconductor layer is located directly on the dielectric layer. The semiconductor layer includes a ridge waveguide and a heater strip extending parallel to the ridge waveguide. The heater strip is electrically isolated from the ridge waveguide and is doped to carry a current therein about parallel to the ridge waveguide.
Abstract translation: 一种设备包括导电或半导体衬底和直接位于其上的介电层。 半导体层直接位于电介质层上。 半导体层包括脊波导和平行于脊波导延伸的加热条。 加热器条与脊波导电隔离，并且被掺杂以在其中携带平行于脊波导的电流。
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公开(公告)号：US09110348B2
公开(公告)日：2015-08-18
申请号：US14260883
申请日：2014-04-24
Applicant: FUJIKURA, LTD.
Inventor： Kazuhiro Goi , Kensuke Ogawa
CPC classification number: G02F1/2257 , G02B6/122 , G02B6/2935 , G02B2006/12061 , G02B2006/12097 , G02B2006/12142 , G02B2006/12159 , G02F2001/0151 , G02F2001/212 , G02F2201/063
Abstract: Provided is an optical element including an optical waveguide including a core formed from: a rib part; and a first and second slab parts sandwiching the rib part. The first slab part includes a P-type region, the second slab part includes an N-type region, the rib part includes a P-type region which is in contact with the P-type region provided in the first slab part, and an N-type region which is in contact with the N-type region provided in the second slab part. The rib part includes a top portion which is located above the first and second slab parts and includes an undoped region formed from at least one of an intrinsic region and a low-concentration doping region which is doped at a dopant concentration 1/10 or less of a dopant concentration in at least one of the adjacent P-type region and the adjacent N-type region.
Abstract translation: 本发明提供一种光学元件，其包括：光波导，包括芯，所述芯由以下部分形成：肋部; 以及夹着所述肋部的第一和第二板坯部。 第一板坯部包括P型区域，第二板坯部包括N型区域，肋部包括与设置在第一板坯部中的P型区域接触的P型区域， N型区域与设置在第二板坯部分中的N型区域接触。 肋部分包括位于第一和第二板坯部分上方的顶部部分，并且包括由掺杂浓度为1/10以下的本征区域和低浓度掺杂区域中的至少一个形成的未掺杂区域 在相邻的P型区域和相邻的N型区域中的至少一个中的掺杂剂浓度。
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公开(公告)号：US09008467B2
公开(公告)日：2015-04-14
申请号：US12262312
申请日：2008-10-31
Applicant: Nathaniel Quitoriano , Marco Fiorentino , David Fattal
Inventor： Nathaniel Quitoriano , Marco Fiorentino , David Fattal
CPC classification number: G02F1/025 , G02F2001/0157 , G02F2201/063 , G02F2202/36
Abstract: An optical modulator includes a first layer that is transparent or semitransparent over a range of optical wavelengths; a modulation layer made from nanoparticles embedded in a matrix; a first electrode and a second electrode that create an electrical field that passes through the modulation layer. A method for forming a nanoparticle modulator includes obtaining and preparing a substrate; forming sub-layers on the substrate; forming a nanoparticle modulator layer, where the nanoparticle modulator layer is an electrical insulator and has a thickness of less than the wavelength of light the nanoparticle QCSE modulator is designed to modulate.
Abstract translation: 光调制器包括在一定范围的光波长上是透明或半透明的第一层; 由嵌入基质中的纳米颗粒制成的调制层; 产生通过调制层的电场的第一电极和第二电极。 形成纳米颗粒调制剂的方法包括获得和制备基材; 在基板上形成子层; 形成纳米颗粒调制剂层，其中纳米颗粒调节剂层是电绝缘体并且具有小于纳米颗粒QCSE调制器被设计为调制的光的波长的厚度。
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公开(公告)号：US08917444B2
公开(公告)日：2014-12-23
申请号：US13525189
申请日：2012-06-15
Applicant: Jiang Li , Hansuek Lee , Tong Chen , Kerry Vahala
Inventor： Jiang Li , Hansuek Lee , Tong Chen , Kerry Vahala
CPC classification number: G02F1/353 , G02F1/2257 , G02F2201/063 , G02F2201/17 , G02F2201/58 , G02F2202/09 , G02F2202/105 , G02F2203/15 , G02F2203/54 , G02F2203/56 , G02F2203/69
Abstract: A frequency comb generator fabricated on a chip with elimination of a disadvantageous reflow process, includes an ultra-high Q disk resonator having a waveguide that is a part of a wedge structure fabricated from a silicon dioxide layer of the chip. The disk resonator allows generation of a frequency comb with a mode spacing as low as 2.6 GHz and up to 220 GHz. A surface-loss-limited behavior of the disk resonator decouples a strong dependence of pumping threshold on repetition rate.
Abstract translation: 制造在芯片上的消除不利的回流工艺的频率梳发生器包括具有作为由芯片的二氧化硅层制成的楔形结构的一部分的波导的超高Q盘谐振器。 磁盘谐振器允许产生低至2.6GHz和高达220GHz的模式间隔的频率梳。 盘式谐振器的表面损耗受限行为使抽水阈值对重复率的强烈依赖性解耦。
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