Abstract:
The present invention provides a thermoformed litter scoop comprising a generally concave scoop portion, and a handle portion attached to the scoop portion. The scoop portion has a bottom, sides and a rear and a plurality of openings therein. The openings are defined to allow the passage of litter granules therethrough. The handle portion has reinforcing ribs and the scoop portion has reinforcing ribs. The invention also describes a method of making a thermoformed scoop.
Abstract:
The present invention discloses an improved probe structure, which comprises: a casing having an opening; a sleeve arranged inside the casing and around the opening; a temperature sensor installed inside the sleeve; a curved solid circularly arranged along the inner rim of the opening and above the temperature sensor. Owing to the curved solid, the detection angle can be reduced, and the detected temperature is closer to the eardrum temperature; further, the gap between the casing and the temperature sensor can be decreased, and the volume of the probe structure can be reduced.
Abstract:
A welding head with heat-conducting structure for a gas welding gun comprises: a housing, a welding head and a non-flat net-like heating member. The housing is formed with a recess and a plurality of air holes in communication with the recess. The welding head is installed on the housing and formed with a guiding slope being located correspondingly to the air holes of the housing, and between the guiding slope and the air holes of the housing is formed a space. The non-flat net-like heating member received in the recess of the housing. The heating effect of the heating member is substantially increased by improving the contacting area. The heat produced during gas combustion will be discharged via the air holes and then guided to flow in the direction of the guide slope, and thus it can be prevented from damaging the neighboring electronic components.
Abstract:
A plated magnetic thin film of high saturation magnetization and low coercivity having the general form Co100-a-bFeaMb, where M can be Mo, Cr, W, Ni or Rh, which is suitable for use in magnetic recording heads that write on narrow trackwidth, high coercivity media. The plating method that produces the alloy includes four current application processes: direct current, pulsed current, pulse reversed current and conditioned pulse reversed current.
Abstract:
Apparatus and method for generating a variable-frequency clock is disclosed. A control state machine defines various commands and generates corresponding control signals. A variable-frequency clock generator then outputs the variable-frequency clock that has a specific pattern corresponding with the respective command, where the variable-frequency clock is constructed with a first clock and a second clock having a frequency different from the first clock. A control signals generator accordingly outputs the control signals that are also constructed with the first clock and the second clock.
Abstract:
A method for providing a variable frequency clock for a SDRAM. First, receiving a clock with a fixed frequency and a plurality of signals, wherein each the signal is an interlace combination of a plurality of high level signals and a plurality of low levels signals. Second, extracting a plurality of proper positions from the signals, wherein each low level of each the signal corresponds to a proper position. Third, amending the frequency of the clock such that each the proper position corresponds to a rising edge of the clock.
Abstract:
A method for manufacturing the lower electrode of a DRAM capacitor. The method includes depositing polysilicon instead of amorphous silicon to form the lower electrode. Because polysilicon has a higher depositing temperature, it has a higher depositing rate capable of shortening depositing time. After forming the polysilicon lower electrode, the upper portion of the polysilicon layer is transformed into an amorphous layer by bombarding the polysilicon layer with ions to damage its internal structure. Eventually, hemispherical grain silicon is able to grow over the lower electrode, thereby increasing its surface area.