Abstract:
An operating current is supplied from a power supply node to an internal circuit. In a test mode, current supply from a power supply to the power supply node is stopped by a current switch, and an externally adjustable test current is supplied to the power supply node. The test current is set in accordance with an acceptable value of a leakage current in the internal circuit. Evaluation is made as to whether the leakage current in the internal circuit is not greater than the acceptable value, in accordance with an output of a voltage comparison circuit detecting a voltage drop at the power supply node.
Abstract:
An opening/closing of a plurality of valves are controlled so that a plurality of gases flow into a chamber in an operation of a semiconductor manufacturing apparatus, and the opening/closing of the plurality of valves are controlled so that a gas A flows into mass flowmeters in an inspection of a mass flow controller MFC 2null. Therefore, the inspection can be achieved while maintaining the connection of mass flow controller MFC 2null to the semiconductor manufacturing apparatus.
Abstract:
The present invention relates to miniaturization of a local signal generation circuit to supply signals to a frequency converter in communication terminals such as a transmitter, a receiver, a transmitter-receiver, and the like that use one or more frequency bands. The local signal generation circuit comprises first and second oscillators capable of changing output frequencies and a multiplication means for multiplying input signals and generates local signals. The multiplication means selectively generates a signal of frequency corresponding to a sum or a difference between an output signal from the first oscillator and an output signal from the second oscillator.
Abstract:
A nonvolatile semiconductor memory device improved with integration degree, in which the gate of the selection transistors is separated on each of active regions, first and second selection transistors are arranged in two stages in the direction of the global bit line, the gates for the selection transistors in each stage are disposed on every other active regions, contact holes are formed in mirror asymmetry with respect to line B-B in the connection portion for the active regions, the gate is connected through the contact hole to the wiring, the adjacent active regions are connected entirely in one selection transistor portion and connected in an H-shape for adjacent two active regions in another selection transistor portion, and the contact hole is formed in the connection -portion and connected when the global bit line, whereby the pitch for the selection transistor portion can be decreased in the direction of the global bit line.
Abstract:
In this data processor, the semiconductor chip comprises a central processing unit, an interface controller, and a bus controller. The interface controller further includes an interface control unit, a FIFO unit, and a transfer control unit. The interface control unit outputs the data of the FIFO unit to the external side of the semiconductor chip and inputs the data inputted from the external side of the semiconductor chip to the FIFO unit. The transfer control unit performs the control to transfer the data stored in the FIFO unit by designating the transfer destination address and the control to input the data to the FIFO unit by designating the transfer source address. The control by the data transfer control device is not included in the transfer control by the transfer control device. Accordingly, the time required for the data transfer between the on-chip interface controller and the external side can be curtailed.
Abstract:
An average value of dimensions of resist patterns formed each time exposure processing is effected on semiconductor substrates of a predetermined number of lots, is compared with a target dimension. When a drift between each of the dimensions of the formed resist patterns and the target dimension is larger than a first value, exposure energy is corrected with a relatively large correction value null1. When the drift between each of the dimensions of the formed resist patterns and the target dimension is smaller than the first value and larger than a second value, exposure energy is corrected with a relatively small correction value null2. When the drift between each of the dimensions of the formed resist patterns and the target dimension is smaller than the second value, no exposure energy is corrected. Exposure processing is effected on a semiconductor substrate of the next lot by using the calculated exposure energy.
Abstract:
Dummy cells are divided into a plurality of divided dummy columns, and divided dummy bit lines are arranged corresponding to the divided dummy columns. These divided dummy bit lines are provided with dummy sense amplifiers that drive a sense control line transmitting a sense enable signal activating a sense amplifier. A faster activation timing of the sense amplifier can be achieved.
Abstract:
A semiconductor integrated circuit including an A/D converter capable of converting an analog signal accepted through an external terminal into a digital signal. The A/D converter includes: a ladder-type resistor for generating a reference voltage; a set of first operational amplifiers, each accepts an output voltage of the ladder-type resistor; a set of first switches, each capable of short-circuiting an input terminal and an output terminal of corresponding one of the first operational amplifiers thereby to allow an offset correction of the corresponding first operational amplifier to be made; and a comparator circuit for comparing an output voltage of each of the first operational amplifiers with the analog signal. The A/D converter can reduce a current output from the ladder-type resistor and speed up charge and discharge of the sampling capacitor.
Abstract translation:一种包括能够将通过外部端子接收的模拟信号转换为数字信号的A / D转换器的半导体集成电路。 A / D转换器包括:用于产生参考电压的梯形电阻器; 一组第一运算放大器,每个接收梯形电阻器的输出电压; 一组第一开关,每个能够使第一运算放大器的相应一个输入端子和输出端子短路,从而允许相应的第一运算放大器的偏移校正; 以及用于将每个第一运算放大器的输出电压与模拟信号进行比较的比较器电路。 A / D转换器可以减少梯形电阻器的电流输出,并加快采样电容器的充电和放电。
Abstract:
A BTL amplifier has a resistance element connected to an output reference voltage input terminal of an inverting amplifier. For offset compensation of the BTL amplifier, a variable current source controller controls an input switching circuit to cause application of compensation input voltages sent from an internal reference voltage source to a first input terminal and a second input terminal. The variable current source controller also controls a variable current source in response to an output signal from a comparator to minimize an output offset voltage, whereby a current flowing through the resistance element is adjusted to control the voltage at the output reference voltage input terminal.
Abstract:
A selector has the first input terminal to which a test signal is given, the second input terminal connected to an output terminal of the first internal logic circuit, and an output terminal connected via a wiring to an input terminal of the second internal logic circuit. Another selector has an input terminal connected to the wiring, another input terminal connected to an output terminal of the second internal logic circuit, and an output terminal connected via another wiring to a signal input terminal of the second internal logic circuit. Each of the selectors selectively outputs a signal given to its first input terminal or a signal given to its second input terminal B based on a test mode signal.