公开(公告)号：US5017973A

公开(公告)日：1991-05-21

申请号：US287738

申请日：1988-12-21

Applicant: Hiroshi Mizuta ,  Tomonori Tanoue ,  Chushirou Kusano ,  Susumu Takahashi

Inventor： Hiroshi Mizuta ,  Tomonori Tanoue ,  Chushirou Kusano ,  Susumu Takahashi

IPC: H01L29/15 ,  H01L29/201 ,  H01L29/205 ,  H01L29/68 ,  H01L29/88

CPC classification number: B82Y10/00 ,  H01L29/155 ,  H01L29/882

Abstract: A resonant tunneling device includes a superlattice layer which includes an interlaminated structure of three semiconductor layers each having a narrow energy bandgap and serving as a quantum well layer and four semiconductor layers each having a wide energy bandgap and serving as a barrier layer and in which three quantum levels are formed in the quantum well layers. A resonant tunneling phenomenon produced between the quantum levels provides peak current values which are substantially equal to each other, peak voltages which can be set independently from each other, and peak-to-valley (P/V) ratios which are high, thereby realizing a resonant tunneling device which has an excellent performance as a three state logic element for a logic circuit. By increasing the number of quantum well layers and the number of barrier layers, a logic element of four or more states can be realized for a logic circuit.

公开(公告)号：US4979009A

公开(公告)日：1990-12-18

申请号：US415708

申请日：1989-09-29

Applicant: Chushiro Kusano ,  Tomonori Tanoue ,  Katsuhiko Mitani

Inventor： Chushiro Kusano ,  Tomonori Tanoue ,  Katsuhiko Mitani

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/205 ,  H01L29/737

CPC classification number: H01L29/7371

Abstract: 2A heterojunction bipolar transistor is disclosed in which a region of a base layer which extends in the vicinity of the interface between the base layer and an emitter layer is doped with an impurity at a higher concentration than that in the inside of the base layer to thereby form a built-in field by which carriers injected from the emitter are caused to drift to the inside of the base layer. In the transistor having this structure, the current gain does not depend on the emitter area, and it is possible to obtain a large current gain with a small emitter area.

Abstract translation: 2A公开了其中在基极层和发射极层之间的界面附近延伸的基极层的区域以比基底层内侧的浓度更高的浓度掺杂杂质的异质结双极晶体管，由此 形成内置的场，通过该场，使从发射器注入的载流子漂移到基层的内部。 在具有这种结构的晶体管中，电流增益不取决于发射极面积，并且可以获得具有小发射极面积的大电流增益。