公开(公告)号：US20170186754A1

公开(公告)日：2017-06-29

申请号：US15377439

申请日：2016-12-13

Applicant: ASM IP Holding B.V.

Inventor： Tom E. Blomberg ,  Varun Sharma ,  Jan Willem Maes

IPC: H01L27/115 ,  H01L21/02

CPC classification number: H01L27/115 ,  H01L21/02538 ,  H01L21/0262 ,  H01L21/02658 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582 ,  H01L28/00

Abstract: A method for forming a V-NAND device is disclosed. Specifically, the method involves deposition of at least one of semiconductive material, conductive material, or dielectric material to form a channel for the V-NAND device. In addition, the method may involve a pretreatment step where ALD, CVD, or other cyclical deposition processes may be used to improve adhesion of the material in the channel.

公开(公告)号：US20170098546A1

公开(公告)日：2017-04-06

申请号：US15231611

申请日：2016-08-08

Applicant: ASM IP Holding B.V.

Inventor： Tom E. Blomberg ,  Jaakko Anttila

IPC: H01L21/285 ,  C23C16/34 ,  C23C16/455

CPC classification number: H01L21/28556 ,  C23C16/34 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/28088 ,  H01L21/28562 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/53238

Abstract: In one aspect, methods of forming smooth ternary metal nitride films, such as TixWyNz films, are provided. In some embodiments, the films are formed by an ALD process comprising multiple super-cycles, each super-cycle comprising two deposition sub-cycles. In one sub-cycle a metal nitride, such as TiN is deposited, for example from TiCl4 and NH3, and in the other sub-cycle an elemental metal, such as W, is deposited, for example from WF6 and Si2H6. The ratio of the numbers of each sub-cycle carried out within each super-cycle can be selected to achieve a film of the desired composition and having desired properties.

公开(公告)号：US20150303101A1

公开(公告)日：2015-10-22

申请号：US14255799

申请日：2014-04-17

Applicant: ASM IP HOLDING B.V.

Inventor： Tom E. Blomberg ,  Linda Lindroos ,  Hannu Huotari

IPC: H01L21/768 ,  H01L23/48

Abstract: An atomic layer deposition (ALD) process for depositing a fluorine-containing thin film on a substrate can include a plurality of super-cycles. Each super-cycle may include a metal fluoride sub-cycle and a reducing sub-cycle. The metal fluoride sub-cycle may include contacting the substrate with a metal fluoride. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant.

Abstract translation: 用于在衬底上沉积含氟薄膜的原子层沉积（ALD）工艺可以包括多个超级循环。 每个超级循环可以包括金属氟化物子循环和还原子循环。 金属氟化物子循环可以包括使基底与金属氟化物接触。 还原子循环可以包括交替地和顺序地将底物与还原剂和氮反应物接触。

公开(公告)号：US20150099066A1

公开(公告)日：2015-04-09

申请号：US14568145

申请日：2014-12-12

Applicant: ASM IP Holding B.V.

Inventor： Hannu Huotari ,  Tom E. Blomberg

IPC: C23C16/44 ,  C23C16/52 ,  C23C16/455

CPC classification number: C23C16/44 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45561 ,  C23C16/52

Abstract: The present invention relates generally to methods and apparatus for the controlled growing of material on substrates. According to embodiments of the present invention, a precursor feed is controlled in order to provide an optimal pulse profile. This may be accomplished by splitting the feed into two paths. One of the paths is restricted in a continuous manner. The other path is restricted in a periodic manner. The output of the two paths converges at a point prior to entry of the reactor. Therefore, a single precursor source is able to fed precursor in to a reactor under two different conditions, one which can be seen as mimicking ALD conditions and one which can be seen as mimicking CVD conditions. This allows for an otherwise single mode reactor to be operated in a plurality of modes including one or more ALD/CVD combination modes. Additionally, the pulse profile of each pulse can be modified. The pulse profile can be modified to create a low or very low partial pressure pulse profile at the beginning of a pulse.

Abstract translation: 本发明一般涉及在衬底上控制生长材料的方法和装置。 根据本发明的实施方案，控制前体进料以提供最佳脉冲谱。 这可以通过将馈送分成两条路径来实现。 其中一条路径以连续的方式受到限制。 另一条路径被定期地限制。 两个路径的输出在反应器进入之前的某一点收敛。 因此，单个前体源能够在两种不同的条件下将前体进料到反应器中，其可以被看作模拟ALD条件，也可以被看作模拟CVD条件。 这允许否则单模电抗器以包括一个或多个ALD / CVD组合模式的多种模式操作。 另外，可以修改每个脉冲的脉冲分布。 可以修改脉冲轮廓以在脉冲开始时产生低或非常低的分压脉冲轮廓。