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    Composite polycrystalline diamond compact with discrete particle size areas
    72.
    发明授权
    Composite polycrystalline diamond compact with discrete particle size areas 有权
    具有离散颗粒尺寸区域的复合多晶金刚石压块

    公开(公告)号：US06187068B1

    公开(公告)日：2001-02-13

    申请号：US09167196

    申请日：1998-10-06

    Applicant: Robert H. Frushour ,  Christopher J. Torbet

    Inventor： Robert H. Frushour ,  Christopher J. Torbet

    IPC: B24D300

    CPC classification number: E21B10/5673 ,  B01J3/062 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/0685 ,  B23B27/146 ,  B23B2226/31 ,  B23B2226/315 ,  B24D99/00 ,  E21B10/5676 ,  Y10T407/26 ,  Y10T407/27

    Abstract: A polycrystalline diamond compact for use in cutting operations that require improved impact strength and non-uniform edge wear. The compact includes a substrate, with multiple, laterally spaced, abrasive diamond particle areas segregated by different particle sizes bonded to the substrate. The polycrystalline diamond areas formed of finer size diamond particles provide higher abrasion resistance wear at a slower rate thus producing a non-linear cutting, edge to the work zone. The areas of different average size diamond particles, in one embodiment, are arranged in concentric rings with each ring of a different particle size. Alternating rings may be formed of uniform size diamond a particles. The areas also may be in the form of spaced grooves inlaid from the end surface of polycrystalline diamond layers. The polycrystalline diamond layer may also have a non-planar end with the discrete areas radially spaced across the layer. Alternately, a plurality of depressions are formed in a working surface of the substrate, with polycrystalline diamond filling all of the depressions. At least one of the depressions is filled with polycrystalline diamond having a different average particle size than that of the diamond filling the other depression. The depressions are thus separated by barriers formed of a harder material.

    Abstract translation: 用于切割操作的多晶金刚石压块，需要改善冲击强度和不均匀的边缘磨损。 该压块包括具有多个横向间隔开的研磨金刚石颗粒区域的基底，该颗粒区域通过不同的粒度分离而与基底结合。 由较细尺寸的金刚石颗粒形​​成的多晶金刚石区域以较慢的速率提供更高的耐磨损性，从而产生到工作区域的非线性切割。 在一个实施例中，不同平均尺寸的金刚石颗粒的区域以不同粒径的每个环排列成同心环。 交替环可以由均匀尺寸的金刚石颗粒形​​成。 这些区域也可以是从多晶金刚石层的端面嵌入的间隔凹槽的形式。 多晶金刚石层还可以具有非平坦的端部，其中离散的区域跨越层径向间隔开。 或者，在基板的工作表面中形成多个凹陷，多晶金刚石填充所有凹陷。 凹陷中的至少一个填充有与填充另一个凹陷的金刚石的平均粒径不同的多晶金刚石。 因此，凹陷由较硬的材料形成的障碍物隔开。

    Metal-matrix diamond or cubic boron nitride composites
    75.
    发明授权
    Metal-matrix diamond or cubic boron nitride composites 有权
    金属基质金刚石或立方氮化硼复合材料

    公开(公告)号：US6106957A

    公开(公告)日：2000-08-22

    申请号：US266111

    申请日：1999-03-10

    Applicant: Zhigang Fang

    Inventor： Zhigang Fang

    IPC: B01J3/06 ,  B24D3/06 ,  B24D18/00 ,  C22C26/00 ,  B22F3/00

    CPC classification number: B24D3/06 ,  B01J3/062 ,  B24D18/0054 ,  C22C26/00 ,  B01J2203/062 ,  B01J2203/0645 ,  B01J2203/0655 ,  B01J2203/066 ,  B01J2203/0685 ,  B22F2998/10 ,  B22F2999/00 ,  Y10T428/12007

    Abstract: A metal-matrix diamond or cubic boron nitride composite and method of making the same are disclosed. The metal-matrix/diamond composite includes grains of diamond uniformly distributed in a metal matrix. Alternatively, grains of cubic boron nitride may be used. Suitable metals for the metal matrix material may include nickel, cobalt, iron, and mixtures or alloys thereof. Other transition metals also may be used. The metal-matrix/diamond or metal-matrix/cubic boron nitride composite has high fracture toughness due to its fine microstructure. Such a metal-matrix/diamond or metal-matrix/cubic boron nitride composite is suitable for use in blanks or cutting elements for cutting tools, drill bits, dressing tools, and wear parts. It also may be used to make wire drawing dies.

    Abstract translation: 公开了金属基质金刚石或立方氮化硼复合物及其制备方法。 金属基质/金刚石复合材料包括均匀分布在金属基体中的金刚石颗粒。 或者，可以使用立方氮化硼的晶粒。 用于金属基质材料的合适的金属可以包括镍，钴，铁及其混合物或合金。 也可以使用其它过渡金属。 金属基体/金刚石或金属基体/立方氮化硼复合材料具有高的断裂韧性，由于其精细的微观结构。 这种金属基质/金刚石或金属基体/立方氮化硼复合材料适用于切割工具，钻头，修整工具和磨损部件的坯料或切割元件。 它也可用于制作拉丝模具。

    Coated particles for synthesizing diamond and process for production of diamond abrasive for sawing
    76.
    发明授权
    Coated particles for synthesizing diamond and process for production of diamond abrasive for sawing 失效
    用于合成金刚石的涂层颗粒和用于锯切的金刚石磨料的生产工艺

    公开(公告)号：US5980982A

    公开(公告)日：1999-11-09

    申请号：US629516

    申请日：1996-04-09

    Applicant: Junji Degawa ,  Kazuwo Tsuji ,  Akifumi Fujioka ,  Yasushi Goda

    Inventor： Junji Degawa ,  Kazuwo Tsuji ,  Akifumi Fujioka ,  Yasushi Goda

    IPC: B01J2/00 ,  B01J3/06 ,  C30B29/04

    CPC classification number: B01J3/062 ,  B01J2203/061 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/068

    Abstract: A coated particle for synthesizing diamond includes: a single crystal of a fine diamond particle coated with at least one layer which contains at least one kind of solvent metal powder for synthesizing diamond and/or at least one kind of solvent metal powder with organic bonding material. Diamond abrasive particles for sawing are produced by a process which includes the steps of: coating fine diamond particles with at least one layer which contains at least one kind of solvent metal powder for synthesizing diamond and/or at least one kind of solvent metal powder with organic bonding material, filling a molding with the coated fine diamond particles, compacting, arranging a compact in a synthesizing vessel, heating the compact to a temperature above a solvent metal-graphite melting point under a pressure condition in which diamond is thermodynamically stable, and recovering the diamond abrasive particles.

    Abstract translation: 用于合成金刚石的涂覆颗粒包括：涂覆有至少一层的细金刚石颗粒的单晶，其包含至少一种用于合成金刚石的溶剂金属粉末和/或至少一种溶剂金属粉末与有机粘合材料 。 用于锯切的金刚石磨料颗粒通过包括以下步骤的方法生产：包括至少一层的精细金刚石颗粒，所述至少一层包含至少一种用于合成金刚石和/或至少一种溶剂金属粉末的溶剂金属粉末， 有机粘合材料，用涂覆的金刚石颗粒填充模塑件，压实，在合成容器中设置压块，在金刚石热力学稳定的压力条件下将压块加热至高于溶剂金属 - 石墨熔点的温度，以及 回收金刚石磨料颗粒。

    Low defect density diamond single crystal and a process for the production of the same
    77.
    发明授权
    Low defect density diamond single crystal and a process for the production of the same 失效
    低缺陷密度菱形单晶及其制造方法相同

    公开(公告)号：US5908503A

    公开(公告)日：1999-06-01

    申请号：US567428

    申请日：1995-12-05

    Applicant: Hitoshi Sumiya ,  Naohiro Toda ,  Shuichi Satoh

    Inventor： Hitoshi Sumiya ,  Naohiro Toda ,  Shuichi Satoh

    IPC: B01J3/06 ,  C30B11/00 ,  C30B29/04

    CPC classification number: B01J3/062 ,  B01J2203/061 ,  B01J2203/0655 ,  B01J2203/068

    Abstract: A colorless, transparent low defect density, synthetic type IIa diamond single crystal, in which the etch pits due to needle-shaped defects are at most 3.times.10.sup.5 pieces/cm.sup.2, and which can be applied to uses needing high crystallinity of diamond, for example, monochromators, semiconductor substrates, spectroscopic crystals in X-ray range, electronic materials, etc., is provided by a process for the production of the colorless, transparent low defect density, synthetic diamond single crystal by growing new diamond crystal on a seed crystal of diamond by the temperature gradient method which comprises using a crystal defect-free diamond single crystal, as a seed crystal of diamond, and optionally subjecting to a heat treatment in a non-oxidizing atmosphere at a low pressure and a temperature of 1100 to 1600.degree. C.

    Abstract translation: 无色，透明的低缺陷密度的合成IIa型金刚石单晶，其中由于针状缺陷引起的蚀刻坑最多为3×10 5个/ cm 2，并且其可以应用于需要高结晶度的金刚石，例如， 单色仪，半导体衬底，X射线范围内的分光晶体，电子材料等，通过生产无色透明低缺陷密度合成金刚石单晶的方法提供，通过在晶种上生长新的金刚石晶体 金刚石，其包括使用无晶体缺陷金刚石单晶作为金刚石的晶种，并且可选地在低压和1100至1600℃的非氧化性气氛中进行热处理。 C。

    Diamond synthesis from silicon carbide
    78.
    发明授权
    Diamond synthesis from silicon carbide 失效
    钻石从碳化硅合成

    公开(公告)号：US5756061A

    公开(公告)日：1998-05-26

    申请号：US796932

    申请日：1991-11-25

    Applicant: John L. White

    Inventor： John L. White

    IPC: B01J3/06 ,  C01B31/06

    CPC classification number: C01B31/06 ,  B01J3/062 ,  B01J2203/0605 ,  B01J2203/0635 ,  B01J2203/0655 ,  B01J2203/068

    Abstract: Diamonds are synthesized from SiC at temperatures and/or pressures lower than those required to convert amorphous carbon or graphite to diamond, by heating the SiC in the absence of another non-diamondaceous source of elemental carbon and in the presence of a reactant which selectively reacts with the Si at the temperature to which the SiC is heated, and in a matrix which is frangible when cooled, while the Sic is within the diamond stable region of the diamond-graphite phase diagram, thereby permitting the diamond to be separated therefrom by physical means.

    Abstract translation: 在不存在另外非金刚石元素碳的情况下加热SiC并且在有选择地反应的反应物的存在下，通过在不存在另外的非金刚石的元素碳的情况下加热SiC，在低于通过将无定形碳或石墨转化为金刚石所需要的温度和/或压力下， 其中Si在加热SiC的温度下，以及当被冷却时易碎的基体，而Sic位于金刚石 - 石墨相图的金刚石稳定区域内，从而允许金刚石与物理层分离 手段。

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