公开(公告)号：US20090159808A1

公开(公告)日：2009-06-25

申请号：US12004871

申请日：2007-12-20

Applicant: Norbert R. Bowering ,  Igor V. Fomenkov ,  Oleh V. Khodykin ,  Alexander N. Bykanov

Inventor： Norbert R. Bowering ,  Igor V. Fomenkov ,  Oleh V. Khodykin ,  Alexander N. Bykanov

IPC: G01J1/42 ,  C23C16/22

CPC classification number: G02B5/0891 ,  B82Y10/00 ,  G01J1/429 ,  G03F7/70941 ,  G03F7/70958 ,  G03F7/70975 ,  G21K2201/061 ,  G21K2201/067 ,  H05G2/003 ,  H05G2/005 ,  H05G2/008

Abstract: A method is disclosed for in-situ monitoring of an EUV mirror to determine a degree of optical degradation. The method may comprise the steps/acts of irradiating at least a portion of the mirror with light having a wavelength outside the EUV spectrum, measuring at least a portion of the light after the light has reflected from the mirror, and using the measurement and a pre-determined relationship between mirror degradation and light reflectivity to estimate a degree of multi-layer mirror degradation. Also disclosed is a method for preparing a near-normal incidence, EUV mirror which may comprise the steps/acts of providing a metallic substrate, diamond turning a surface of the substrate, depositing at least one intermediate material overlying the surface using a physical vapor deposition technique, and depositing a multi-layer mirror coating overlying the intermediate material.

Abstract translation: 公开了一种用于EUV反射镜的原位监测以确定光学降解程度的方法。 该方法可以包括用具有波长在EUV谱以外的波长的光照射反射镜的至少一部分的步骤/动作，在光已经从反射镜反射之后测量光的至少一部分，并且使用该测量和 镜面退化和光反射率之间的预定关系，以估计多层镜面退化的程度。 还公开了一种用于制备近似法线入射的EUV反射镜的方法，该反射镜可以包括提供金属基底的步骤/动作，转动基底的表面的金刚石，使用物理气相沉积沉积覆盖表面的至少一种中间材料 技术，并沉积覆盖中间材料的多层镜面涂层。

公开(公告)号：US20090148695A1

公开(公告)日：2009-06-11

申请号：US12326504

申请日：2008-12-02

Applicant: Takayuki Miura ,  Kenji Ando ,  Hidehiro Kanazawa ,  Koji Teranishi ,  Seiken Matsumoto ,  Kyoko Nagata ,  Shumpei Tatsumi ,  Shinji Fukui

Inventor： Takayuki Miura ,  Kenji Ando ,  Hidehiro Kanazawa ,  Koji Teranishi ,  Seiken Matsumoto ,  Kyoko Nagata ,  Shumpei Tatsumi ,  Shinji Fukui

IPC: B32B5/00

CPC classification number: G21K1/062 ,  B82Y10/00 ,  G21K2201/067 ,  Y10T428/26

Abstract: An optical element for X-ray includes a substrate, a first multilayer film having a reflection property with respect to light in a soft X-ray wavelength range, and a second multilayer film, disposed between the substrate and the first multilayer film, for reducing film stress of the first multilayer film. The second multilayer film has a periodic structure having a unit period film thickness which is 90% or more and less than 110% of a two or more integral multiple of 7 nm.

Abstract translation: 用于X射线的光学元件包括基板，具有相对于软X射线波长范围内的光的反射特性的第一多层膜和设置在基板和第一多层膜之间的第二多层膜，用于还原 第一层多层薄膜的薄膜应力。 第二多层膜具有单位周期膜厚度为7nm以上2倍以上的整数倍的90％以上且小于110％的周期性结构。

公开(公告)号：US20090135486A1

公开(公告)日：2009-05-28

申请号：US11856403

申请日：2007-09-17

Applicant: Ian McNulty

Inventor： Ian McNulty

IPC: G02B27/44 ,  G21K1/06

CPC classification number: G21K1/06 ,  G02B5/189 ,  G02B21/14 ,  G21K2201/06 ,  G21K2201/067 ,  G21K2207/005

Abstract: A method and objective apparatus are provided for implementing an enhanced phase contrast microscope. A focusing vortex lens, defined by a diffractive spiral zone plate (SZP) lens, is used for the objective for the phase contrast microscope. The SZP lens focuses and imparts a helical phase to incident illumination to image the specimen with spiral phase contrast. The spiral phase contrast microscope is sensitive to phase gradients in all sample axes. Replacing the objective of a microscope with the diffractive SZP lens of the invention immediately provides existing instruments with spiral phase contrast capability.

Abstract translation: 提供了一种实现增强型相差显微镜的方法和目标装置。 用于相差显微镜的目标使用由衍射螺旋区域（SZP）透镜限定的聚焦涡透镜。 SZP透镜聚焦并向入射照明施加螺旋相以对具有螺旋相位对比度的样品进行成像。 螺旋相差显微镜对所有样品轴的相位梯度敏感。 用本发明的衍射SZP透镜替代显微镜的目的立即提供现有的具有螺旋相位对比能力的仪器。

公开(公告)号：US07474733B1

公开(公告)日：2009-01-06

申请号：US09890143

申请日：2000-08-18

Applicant: Masaki Yamamoto

Inventor： Masaki Yamamoto

IPC: G21K1/06

CPC classification number: B82Y10/00 ,  G03F7/70316 ,  G21K1/062 ,  G21K2201/067

Abstract: A multilayer film reflector capable of simply correcting a wavefront phase and a method of forming the reflector are disclosed.For this purpose, a reflector using reflection by a multilayer film is disclosed. This multilayer film is formed in a number of cycles larger than that necessary to substantially saturate a reflectance, and a wavefront phase of emerging rays is adjusted by cutting away the multilayer film in accordance with an amount of adjustment of the wavefront phase.Further, the formation of a correction film as well as the formation of a multilayer larger than necessary to substantially saturate the reflectance permits the correction of a phase by cutting away also the multilayer film when the phase cannot be corrected only by cutting away the correction film, whereby the phase can be corrected more accurately.

Abstract translation: 公开了能够简单地校正波前相位的多层膜反射体和形成反射器的方法。 为此，公开了使用多层膜反射的反射体。 该多层膜以比使反射率充分饱和所需的周期大的次数形成，并且通过根据波前相位的调整量切除多层膜来调整出射光线的波前相位。 此外，校正膜的形成以及大于使反射率基本饱和所需的多层的形成允许通过在相位不能仅通过切除校正膜而被校正的同时切除多层膜来校正相位 从而可以更精确地校正相位。

公开(公告)号：US07449704B2

公开(公告)日：2008-11-11

申请号：US11647024

申请日：2006-12-27

Applicant: Igor V. Fomenkov ,  Alexander I. Ershov

Inventor： Igor V. Fomenkov ,  Alexander I. Ershov

IPC: H01J35/20

CPC classification number: G03F7/70033 ,  B82Y10/00 ,  G03F7/70175 ,  G03F7/70916 ,  G21K1/062 ,  G21K2201/061 ,  G21K2201/065 ,  G21K2201/067 ,  H05G2/003 ,  H05G2/005 ,  H05G2/006 ,  H05G2/008

Abstract: An EUV light source apparatus and method for producing EUV light, which includes a plasma generation chamber for generating EUV plasma; an EUV light collector having a reflective portion irradiated by EUV light produced in the EUV plasma; a target sample having reflective portion comprised of the same materials as the EUV light collector reflective portion; a first EUV detector for detecting EUV light produced in the EUV plasma; and a second EUV detector for detecting EUV light reflected from the target sample.

Abstract translation: EUV光源装置及其制造方法，其包括：产生EUV等离子体的等离子体产生室; 具有在EUV等离子体中产生的EUV光照射的反射部的EUV集光体; 具有由与EUV集光反射部相同的材料构成的反射部的目标样品; 用于检测在EUV等离子体中产生的EUV光的第一EUV检测器; 以及用于检测从目标样品反射的EUV光的第二EUV检测器。

公开(公告)号：US07440546B2

公开(公告)日：2008-10-21

申请号：US11634681

申请日：2006-12-06

Applicant: Chian Q. Liu ,  Raymond P. Conley ,  Albert T. Macrander ,  Hyon Chol Kang ,  G. Brian Stephenson ,  Jorg Maser

Inventor： Chian Q. Liu ,  Raymond P. Conley ,  Albert T. Macrander ,  Hyon Chol Kang ,  G. Brian Stephenson ,  Jorg Maser

IPC: G21K1/06

CPC classification number: G21K1/062 ,  B82Y10/00 ,  G21K2201/061 ,  G21K2201/067

Abstract: A zone plate multilayer structure includes a substrate carrying a plurality of alternating layers respectively formed of tungsten silicide (WSi2) and silicon (Si). The alternating layers are sequentially deposited precisely controlling a thickness of each layer from a minimum thickness of a first deposited layer adjacent the substrate to a maximum thickness of a last deposited layer. The first minimum thickness layer has a selected thickness of less than or equal to 5 nm with the thickness of the alternating layers monotonically increasing to provide a zone plate multilayer structure having a thickness of greater than 12 μm (microns). The x-rays are diffracted in Laue transmission geometry by the specific arrangement of silicon and tungsten silicide.

Abstract translation: 区域板多层结构包括承载分别由硅化钨（WSi 2 N 2）和硅（Si）形成的多个交替层的基板。 交替层顺序沉积，从邻近衬底的第一沉积层的最小厚度到最后沉积层的最大厚度精确地控制每一层的厚度。 第一最小厚度层具有小于或等于5nm的选定厚度，交替层的厚度单调增加，以提供厚度大于12μm（微米）的区域板多层结构。 X射线通过硅和硅化钨的具体布置在Laue透射几何中衍射。

公开(公告)号：US07405031B2

公开(公告)日：2008-07-29

申请号：US10453889

申请日：2003-06-04

Applicant: Ralph Kurt

Inventor： Ralph Kurt

IPC: G03B27/54 ,  G03B27/32 ,  G03F7/20

CPC classification number: G21K1/06 ,  G02B1/105 ,  G02B1/113 ,  G02B1/14 ,  G02B5/0891 ,  G03F7/70233 ,  G03F7/70958 ,  G03F7/70983 ,  G21K2201/067

Abstract: A multi-optical-layer optical element of a lithographic projection apparatus in which at least one optical layer is comprised of an alloy of Mo and Cr. That layer may form the outer most layer of a Mo/Si layer system with an optional protective outer coating of Ru. Furthermore, the multi-optical-layer optical element may be comprised of a plurality of interposed between Mo/Cr alloyed layers.

Abstract translation: 光刻投影装置的多光学层光学元件，其中至少一个光学层由Mo和Cr的合金组成。 该层可以形成具有Ru的任选的保护性外涂层的Mo / Si层系统的最外层。 此外，多光学层光学元件可以由Mo / Cr合金化层之间的多个介质构成。

公开(公告)号：US20080151215A1

公开(公告)日：2008-06-26

申请号：US11643953

申请日：2006-12-22

Applicant: Wouter Anthon Soer ,  Vadim Yevgenyevich Banine ,  Maarten Marinus Johannes Wilhelmus Van Herpen

Inventor： Wouter Anthon Soer ,  Vadim Yevgenyevich Banine ,  Maarten Marinus Johannes Wilhelmus Van Herpen

IPC: G03F1/00

CPC classification number: G03F7/70283 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/24 ,  G03F1/34 ,  G21K1/062 ,  G21K2201/067

Abstract: A patterning device for a photolithographic apparatus is used to form a patterned radiation beam, by imparting a cross-sectional pattern to the radiation beam during reflection from the patterning device. The patterning device comprises a layer of phase-change material that is capable of locally undergoing an induced structural phase change into respective ones of a plurality of stable and/or metastable states. Furthermore, the patterning device comprises a radiation reflective structure with periodically arranged layers adjacent to the layer of phase-change material. The radiation reflective structures do not partake in the phase changes. By locally changing the phase of the phase-change material, the reflectivity of the whole structure is modified, for example due to thickness changes in the layer of phase-change material that lead to destructive interference of different components of the reflected light or due to changes in surface roughness of the radiation reflective structure.

Abstract translation: 用于光刻设备的图案形成装置用于通过在从图案形成装置反射期间将辐射束赋予横截面图案来形成图案化的辐射束。 图案形成装置包括相变材料层，其能够局部地经历诱导的结构相变为多个稳定和/或亚稳态中的相应的相变。 此外，图案形成装置包括具有与相变材料层相邻的周期性排列的层的辐射反射结构。 辐射反射结构不参与相位变化。 通过局部改变相变材料的相位，整个结构的反射率被改变，例如由于相变材料层中的厚度变化导致反射光的不同分量的破坏性干扰或由于 辐射反射结构的表面粗糙度变化。

公开(公告)号：US20080149860A1

公开(公告)日：2008-06-26

申请号：US12000298

申请日：2007-12-11

Applicant: Wayne K. Schroeder ,  Mark A. Turner ,  Brett A. Williams

Inventor： Wayne K. Schroeder ,  Mark A. Turner ,  Brett A. Williams

IPC: G21G1/00

CPC classification number: H05H6/00 ,  G21K1/06 ,  G21K1/08 ,  G21K2201/067

Abstract: Systems and methods are disclosed for emitting electromagnetic (EM) energy. A source emits EM energy that is incident on a first material. The first material transmits EM energy to a second material. The second material can have a first surface adjacent to the first material and a thickness and shape selected to stimulate surface plasmon polaritons on the first surface of the second material to resonate the EM energy transmitted from the first material such that the resonated EM energy has an EM wavelength in a narrow field of view with substantially no sidelobes.

Abstract translation: 公开了用于发射电磁（EM）能量的系统和方法。 源发射入射在第一材料上的EM能量。 第一种材料将EM能量传输到第二种材料。 第二材料可以具有与第一材料相邻的第一表面，并且选择的厚度和形状来刺激第二材料的第一表面上的表面等离子体激元，以共振从第一材料传递的EM能量，使得共振的EM能量具有 EM波长在窄视野内，基本上没有旁瓣。

公开(公告)号：US20080149854A1

公开(公告)日：2008-06-26

申请号：US11643951

申请日：2006-12-22

Applicant: Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Mandeep Singh ,  Harm-Jan Voorma ,  Derk Jan Wilfred Klunder

Inventor： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Mandeep Singh ,  Harm-Jan Voorma ,  Derk Jan Wilfred Klunder

IPC: G21G5/00 ,  G02B5/08

CPC classification number: G03F7/70958 ,  B82Y10/00 ,  G03F7/70925 ,  G21K1/062 ,  G21K2201/067

Abstract: An EUV illumination system, for example, for use in a photolithographic apparatus is configured to condition a radiation beam. A hydrogen radical source configured to supply gas containing hydrogen or hydrogen radicals into the illumination system. The hydrogen gas is effective to remove carbonaceous contamination from the surface of a mirror in the illumination system or to form a buffer against unwanted gases. In order to prevent damage by hydrogen that penetrates the mirror, the mirror comprises a layer made of metal non-metal compound adjacent a reflection surface of the mirror. A transition metal carbide, nitride, boride or silicide compound or mixture thereof may be used for example.

Abstract translation: 例如，用于光刻设备的EUV照明系统被配置为调节辐射束。 氢自由基源，被配置为将含有氢或氢自由基的气体供应到照明系统中。 氢气有效地从照明系统中的反射镜表面除去碳质污染物或形成缓冲液以防止不需要的气体。 为了防止穿透反射镜的氢的破坏，反射镜包括与反射镜的反射面相邻的金属非金属化合物制成的层。 可以使用过渡金属碳化物，氮化物，硼化物或硅化物或其混合物。