Abstract:
A method for fabricating row lines over a field emission array employs only two mask steps to define row lines and pixel openings. A layer of conductive material is disposed over a substantially planarized surface of a grid of semiconductive material and a layer of passivation material is disposed over the layer of conductive material. Row lines and pixel openings may be formed through the passivation and conductive layers by use of a first mask. The row lines may be further defined by using a second mask to remove semiconductive material of the grid. Alternatively, a first mask may be used to fully define row lines from the layers of passivation, conductive, and semiconductive material, while a second mask may be used to define pixel openings through the layers of passivation and conductive material. Field emission arrays fabricated by such methods are also disclosed.
Abstract:
A display includes a substrate and an emitter formed on the substrate. A first dielectric layer is formed on the substrate to have a thickness slightly less than a height of the emitter above the planar surface and includes an opening formed about the emitter. The display also includes a conductive extraction grid formed on the first dielectric layer. The extraction grid includes an opening surrounding the emitter. The display further includes a second dielectric layer formed on the extraction grid and a focusing electrode formed on the second dielectric layer. The focusing electrode is electrically coupled to the emitter through an impedance element. The focusing electrode includes an opening formed above the apex. The focusing electrode provides enhanced focusing performance together with reduced circuit complexity, resulting in a superior display.
Abstract:
A method and a control circuit for controlling a field emission display to reduce emission to grid during turn on and turn off are provided. In an illustrative embodiment, the control circuit includes a threshold detector that receives an input signal proportional to an anode voltage (VAnode) for the display and produces a high or low output signal dependent on the level of VAnode. An output low corresponding to a high voltage at the display screen enables a gate element of a pass transistor that controls current flow to the grid. Alternately, an output high corresponding to a low voltage at the display screen enables a pull down transistor that controls discharge of the grid to ground. The control circuit can also include a fault detection circuit for detecting a sharp decrease in the anode voltage and discharging the grid. In an alternate embodiment, the control circuit shorts the emitter sites together during turn on and turn off and provides a high source impedance to restrict current flow to any one emitter site. The high source impedance can be permanent or switchable by a relay or switching circuit.
Abstract:
A display includes a substrate and an emitter formed on the substrate. A first dielectric layer is formed on the substrate to have a thickness slightly less than a height of the emitter above the planar surface and includes an opening formed about the emitter. The display also includes a conductive extraction grid formed on the first dielectric layer. The extraction grid includes an opening surrounding the emitter. The display further includes a second dielectric layer formed on the extraction grid and a focusing electrode formed on the second dielectric layer. The focusing electrode is electrically coupled to the emitter through an impedance element. The focusing electrode includes an opening formed above the apex. The focusing electrode provides enhanced focusing performance together with reduced circuit complexity, resulting in a superior display.
Abstract:
A cold cathode field emission device having an electron emission layer (14), an insulating layer and a gate electrode (12) which are laminated one on another with the insulating layer positioned between the gate electrode, and the electron emission layer (14), and further having an opening portion which penetrates through at least the insulating layer and the electron emission layer, the electron emission layer having an edge portion for emitting electrons, the edge portion being projected on a wall surface of the opening portion, and the electron emission layer being connected to a power source through a resistance layer (23).
Abstract:
The present invention includes field emission devices and methods of forming field emission devices. According to one aspect of the invention, a field emission device includes a substrate; at least two adjacent and spaced emitters extending from the substrate; a conductor spaced from the substrate and configured to receive an electrical charge to control the emission of electrons from the at least two adjacent and spaced emitters; and a plurality of spaced insulative conductor supports positioned between the conductor and the substrate, and intermediate the at least two adjacent and spaced emitters.
Abstract:
A display includes a substrate and an emitter formed on the substrate. A first dielectric layer is formed on the substrate to have a thickness slightly less than a height of the emitter above the planar surface and includes an opening formed about the emitter. The display also includes a conductive extraction grid formed on the first dielectric layer. The extraction grid includes an opening surrounding the emitter. The display further includes a second dielectric layer formed on the extraction grid and a focusing electrode formed on the second dielectric layer. The focusing electrode is electrically coupled to the emitter through an impedance element. The focusing electrode includes an opening formed above the apex. The focusing electrode provides enhanced focusing performance together with reduced circuit complexity, resulting in a superior display.
Abstract:
An electron-emitting device contains a lower conductive region (22), a porous insulating layer (24A, 24B, 24D, 24E, or 24F) overlying the lower conductive region, and a multiplicity of electron-emissive elements (30, 30A, or 30B) situated in pores (281) extending through the porous layer. The pores are situated at locations substantially random relative to one another. The lower conductive region typically contains a highly conductive portion (22A) and an overlying highly resistive portion (22B). Alternatively or additionally, a patterned gate layer (34B, 40B, or 46B) overlies the porous layer. Openings (36, 42, or 541) corresponding to the filaments extend through the gate layer at locations generally centered on the filaments such that the filaments are separated from the gate layer.
Abstract:
Cathodoluminescent field emission display devices feature phosphor biasing, amplification material layers for secondary electron emissions, oxide secondary emission enhancement layers, and ion barrier layers of silicon nitride, to provide high-efficiency, high-brightness field emission displays with improved operating characteristics and durability. The amplification materials include copper-barium, copper-beryllium, gold-barium, gold-calcium, silver-magnesium and tungsten-barium-gold, and other high amplification factor materials fashioned to produce high-level secondary electron emissions within a field emission display device. For enhanced secondary electron emissions, an amplification material layer can be coated with a near mono-molecular film consisting essentially of an oxide of barium, beryllium, calcium, magnesium or strontium. Use of a high amplification factor film as a phosphor biasing electrode, and variability of the phosphor biasing potential to achieve brightness or gray scale control are further described in the disclosure.
Abstract:
A field emission device having a gate electrode structure in which a nanocrystalline or microcrystalline silicon layer is positioned over a silicon dioxide dielectric layer. Also disclosed are methods for forming the field emission device. The nanocrystalline or microcrystalline silicon layer forms a bond with the dielectric layer that is sufficiently strong to prevent delamination during a chemical-mechanical planarization operation that is conducted during formation of the field emission device. The nanocrystalline or microcrystalline silicon layer is deposited by PECVD in an atmosphere that contains silane and hydrogen at a ratio in a range from about 1:15 to about 1:40. Multiple field emission devices may be formed and included in a flat panel display for computer monitors, telecommunications devices, and the like.