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    Cathode obtaining method and electron beam writing apparatus
    2.
    发明授权
    Cathode obtaining method and electron beam writing apparatus 有权
    阴极获得方法和电子束写入装置

    公开(公告)号：US09412551B2

    公开(公告)日：2016-08-09

    申请号：US14721380

    申请日：2015-05-26

    Applicant: NuFlare Technology, Inc.

    Inventor： Kenichi Saito ,  Ryoei Kobayashi

    IPC: H01J9/42 ,  H01J1/13 ,  H01J9/02 ,  H01J37/06 ,  H01J37/317

    CPC classification number: H01J9/022 ,  H01J3/022 ,  H01J9/025 ,  H01J37/06 ,  H01J37/3174 ,  H01J2237/061 ,  H01J2237/06308

    Abstract: A cathode obtaining method includes producing a plurality of cathodes each including an electron emission member and a cover part, provided with a gap, which covers a side surface of the electron emission member, measuring an outer dimension of the upper surface of the electron emission member, for each of a plurality of cathodes, measuring an outer dimension of the gap at the same surface as the upper surface of the electron emission member, for each of a plurality of cathodes, calculating an area ratio by dividing the area of the gap, for each of a plurality of cathodes, obtaining an upper limit of the area ratio corresponding to a desired brightness by using a correlation between brightness and the area ratio, and selecting a cathode having the area ratio less than or equal to the upper limit from a plurality of cathodes that have been produced.

    Abstract translation: 一种阴极获得方法包括制造多个阴极，每个阴极包括电子发射部件和覆盖部分，盖子部分覆盖电子发射部件的侧表面，间隙测量电子发射部件的上表面的外部尺寸 对于多个阴极中的每一个，对于多个阴极中的每一个，测量与电子发射构件的上表面相同的表面处的间隙的外部尺寸，通过划分间隙的面积来计算面积比， 对于多个阴极中的每一个，通过使用亮度和面积比之间的相关性来获得对应于期望亮度的面积比的上限，并且从a中选择具有小于或等于上限的面积比​​的阴极 已经生产的多个阴极。

    Fully integrated and encapsulated micro-fabricated vacuum diode and method of manufacturing same
    3.
    发明授权
    Fully integrated and encapsulated micro-fabricated vacuum diode and method of manufacturing same 有权
    完全集成和封装的微制造真空二极管及其制造方法

    公开(公告)号：US09202657B1

    公开(公告)日：2015-12-01

    申请号：US14340012

    申请日：2014-07-24

    Applicant: Sandia Corporation

    Inventor： Paul J. Resnick ,  Eric Langlois

    IPC: H01J9/04 ,  H01J3/02 ,  H01J1/308 ,  H01J1/304

    CPC classification number: H01J1/308 ,  H01J1/3044 ,  H01J1/36 ,  H01J3/022 ,  H01J9/025 ,  H01J9/14 ,  H01J19/24 ,  H01J19/32 ,  H01J19/46 ,  H01J19/54 ,  H01J21/20

    Abstract: Disclosed is an encapsulated micro-diode and a method for producing same. The method comprises forming a plurality columns in the substrate with a respective tip disposed at a first end of the column, the tip defining a cathode of the diode; disposing a sacrificial oxide layer on the substrate, plurality of columns and respective tips; forming respective trenches in the sacrificial oxide layer around the columns; forming an opening in the sacrificial oxide layer to expose a portion of the tips; depositing a conductive material in of the opening and on a surface of the substrate to form an anode of the diode; and removing the sacrificial oxide layer.

    Abstract translation: 公开了一种封装微型二极管及其制造方法。 该方法包括在衬底中形成多个柱，其中相应的顶端设置在柱的第一端，尖端限定二极管的阴极; 在基板上设置牺牲氧化物层，多个柱和各个尖端; 在柱周围的牺牲氧化物层中形成相应的沟槽; 在所述牺牲氧化物层中形成开口以暴露所述尖端的一部分; 在所述开口和所述衬底的表面上沉积导电材料以形成所述二极管的阳极; 并去除牺牲氧化物层。

    ION Implantation with Charge and Direction Control
    4.
    发明申请
    ION Implantation with Charge and Direction Control 有权
    离子注入与充电和方向控制

    公开(公告)号：US20150069913A1

    公开(公告)日：2015-03-12

    申请号：US14541314

    申请日：2014-11-14

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Chih-Hong Hwang ,  Chun-Lin Chang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    IPC: H01J37/317

    CPC classification number: H01J37/3171 ,  H01J3/02 ,  H01J3/022 ,  H01J3/26 ,  H01J37/026 ,  H01J37/06 ,  H01J2237/0041 ,  H01J2237/31705

    Abstract: The present disclosure provides for various advantageous methods and apparatus of controlling electron emission. One of the broader forms of the present disclosure involves an electron emission element, comprising an electron emitter including an electron emission region disposed between a gate electrode and a cathode electrode. An anode is disposed above the electron emission region, and a voltage set is disposed above the anode. A first voltage applied between the gate electrode and the cathode electrode controls a quantity of electrons generated from the electron emission region. A second voltage applied to the anode extracts generated electrons. A third voltage applied to the voltage set controls a direction of electrons extracted through the anode.

    Abstract translation: 本公开提供了控制电子发射的各种有利的方法和装置。 本公开的更广泛形式之一涉及电子发射元件，其包括电子发射器，其包括设置在栅电极和阴极之间的电子发射区。 阳极设置在电子发射区域的上方，并且在阳极上设置电压组。 施加在栅电极和阴极之间的第一电压控制从电子发射区产生的电子量。 施加到阳极的第二电压提取产生的电子。 施加到电压组的第三电压控制通过阳极提取的电子的方向。

    Matrix-type cold-cathode electron source device
    5.
    发明授权
    Matrix-type cold-cathode electron source device 失效
    矩阵型冷阴极电子源装置

    公开(公告)号：US08384281B2

    公开(公告)日：2013-02-26

    申请号：US12991005

    申请日：2009-04-27

    Applicant: Makoto Yamamoto ,  Keisuke Koga

    Inventor： Makoto Yamamoto ,  Keisuke Koga

    IPC: H01J1/30 ,  H01J1/304 ,  H01J1/46

    CPC classification number: H01J3/022 ,  H01J1/3044 ,  H01J29/04 ,  H01J29/467 ,  H01J29/481 ,  H01J2203/0212 ,  H01J2329/4608

    Abstract: A matrix-type cold-cathode electron source device includes: an emitter array (3b) in which a plurality of emitters are arranged, and a gate electrode (5) opposed to the emitter array (3b). The gate electrode (5) includes: an emitter area gate electrode (5c) opposed to the emitter array (3b); a gate address electrode (5a) connecting the emitter area gate electrode (5c) to a gate signal wire (8a); and a high-resistance area (5b) disposed between the gate address electrode (5a) and the emitter area gate electrode (5c).

    Abstract translation: 矩阵型冷阴极电子源器件包括：布置有多个发射极的发射极阵列（3b）和与发射极阵列（3b）相对的栅电极（5）。 栅极（5）包括：与发射极阵列（3b）相对的发射极区域栅电极（5c）; 将所述发射极区域栅电极（5c）连接到栅极信号线（8a）的栅极寻址电极（5a）; 以及设置在栅极寻址电极（5a）和发射极区域栅电极（5c）之间的高电阻区域（5b）。

    Low voltage electron source with self aligned gate apertures, fabrication method thereof, and luminous display using the electron source
    7.
    发明授权
    Low voltage electron source with self aligned gate apertures, fabrication method thereof, and luminous display using the electron source 失效
    具有自对准栅极孔径的低电压电子源，其制造方法和使用电子源的发光显示器

    公开(公告)号：US08039042B2

    公开(公告)日：2011-10-18

    申请号：US11927323

    申请日：2007-10-29

    Applicant: Zhidan Li Tolt

    Inventor： Zhidan Li Tolt

    IPC: B05D5/12 ,  B44C1/22

    CPC classification number: H01J3/022 ,  B82Y10/00 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/30469

    Abstract: A method of fabricating an electron source having a self-aligned gate aperture is disclosed. A substrate is deposited on a first conductive layer. Over the first conductive layer an emitter layer is deposited. The emitter layer includes one or a plurality of spaced-apart nano-structures and a solid surface with nano-structures protruding above the surface. An insulator is conformally deposited over the emitter layer surface and forms a post from each protruding nano-structure. A second conductive layer is deposited over the insulator and the second conductive layer and the insulator are removed from the nano-structures such that apertures are formed in the second conductive layer and at least the ends of the nano-structures are exposed at the centers of said apertures.

    Abstract translation: 公开了一种制造具有自对准栅极孔径的电子源的方法。 衬底沉积在第一导电层上。 在第一导电层上沉积发射极层。 发射极层包括一个或多个间隔开的纳米结构和具有突出在表面上方的纳米结构的固体表面。 绝缘体共形沉积在发射极层表面上，并从每个突出的纳米结构形成柱。 第二导电层沉积在绝缘体上，并且第二导电层和绝缘体从纳米结构中移除，使得在第二导电层中形成孔，并且纳米结构的至少端部暴露在 所述孔。

    Field emission array having carbon microstructure and method of manufacturing the same
    8.
    发明授权
    Field emission array having carbon microstructure and method of manufacturing the same 失效
    具有碳微观结构的场发射阵列及其制造方法

    公开(公告)号：US08017413B2

    公开(公告)日：2011-09-13

    申请号：US12450965

    申请日：2008-07-01

    Applicant: Seung Seob Lee ,  Seok Woo Lee ,  Jung A Lee

    Inventor： Seung Seob Lee ,  Seok Woo Lee ,  Jung A Lee

    IPC: H01L21/00

    CPC classification number: H01J1/3044 ,  H01J3/022 ,  H01J9/025 ,  H01J31/127 ,  H01J63/02 ,  H01J2201/30415 ,  H01J2201/30453 ,  H01J2203/0228 ,  H01J2329/0418 ,  H01J2329/0444 ,  H01J2329/4626

    Abstract: Provided is a method for manufacturing a field emission array with a carbon microstructure. The method includes: a photomask attachment step of attaching a photomask with a pattern groove to one surface of a transparent substrate; a photoresist attachment step of attaching a negative photoresist to one surface of the photomask; an exposure step of irradiating light toward the opposite surface of the transparent substrate from the photomask to cure a portion of the negative photoresist with the light irradiated on the negative photoresist through the pattern groove; a developing step of removing an uncured portion of the negative photoresist while leaving the cured portion of the negative photoresist as a microstructure; a pyrolysis step of heating and carbonizing the microstructure thus obtained; and a cathode attachment step of attaching a voltage-supplying cathode to the surface of the transparent substrate on which the microstructure is formed.

    Abstract translation: 提供一种制造具有碳微观结构的场致发射阵列的方法。 该方法包括：光掩模附着步骤，其将具有图案凹槽的光掩模附着到透明基板的一个表面; 将负性光致抗蚀剂附着到光掩模的一个表面的光致抗蚀剂附着步骤; 曝光步骤，从所述光掩模向所述透明基板的相对表面照射光，以通过所述图案凹槽照射在所述负性光致抗蚀剂上的光来固化所述负性光致抗蚀剂的一部分; 去除负性光致抗蚀剂的未固化部分同时留下负性光致抗蚀剂的固化部分作为微结构的显影步骤; 对由此获得的微结构进行加热和碳化的热解步骤; 以及将电压供给阴极安装在其上形成微结构的透明基板的表面上的阴极附着步骤。

    FIELD EMISSION ARRAY HAVING CARBON MICROSTRUCTURE AND METHOD OF MANUFACTURING THE SAME
    9.
    发明申请
    FIELD EMISSION ARRAY HAVING CARBON MICROSTRUCTURE AND METHOD OF MANUFACTURING THE SAME 失效
    具有碳微结构的场发射阵列及其制造方法

    公开(公告)号：US20110089396A1

    公开(公告)日：2011-04-21

    申请号：US12450965

    申请日：2008-07-01

    Applicant: Seung Seob Lee ,  Seok Woo Lee ,  Jung A Lee

    Inventor： Seung Seob Lee ,  Seok Woo Lee ,  Jung A Lee

    IPC: H01L29/16 ,  H01L21/28 ,  H01L21/66

    CPC classification number: H01J1/3044 ,  H01J3/022 ,  H01J9/025 ,  H01J31/127 ,  H01J63/02 ,  H01J2201/30415 ,  H01J2201/30453 ,  H01J2203/0228 ,  H01J2329/0418 ,  H01J2329/0444 ,  H01J2329/4626

    Abstract: Provided is a method for manufacturing a field emission array with a carbon microstructure. The method includes: a photomask attachment step of attaching a photomask with a pattern groove to one surface of a transparent substrate; a photoresist attachment step of attaching a negative photoresist to one surface of the photomask; an exposure step of irradiating light toward the opposite surface of the transparent substrate from the photomask to cure a portion of the negative photoresist with the light irradiated on the negative photoresist through the pattern groove; a developing step of removing an uncured portion of the negative photoresist while leaving the cured portion of the negative photoresist as a microstructure; a pyrolysis step of heating and carbonizing the microstructure thus obtained; and a cathode attachment step of attaching a voltage-supplying cathode to the surface of the transparent substrate on which the microstructure is formed.

    Abstract translation: 提供一种制造具有碳微观结构的场致发射阵列的方法。 该方法包括：光掩模附着步骤，其将具有图案凹槽的光掩模附着到透明基板的一个表面; 将负性光致抗蚀剂附着到光掩模的一个表面的光致抗蚀剂附着步骤; 曝光步骤，从所述光掩模向所述透明基板的相对表面照射光，以通过所述图案凹槽照射在所述负性光致抗蚀剂上的光来固化所述负性光致抗蚀剂的一部分; 去除负性光致抗蚀剂的未固化部分同时留下负性光致抗蚀剂的固化部分作为微结构的显影步骤; 对由此获得的微结构进行加热和碳化的热解步骤; 以及将电压供给阴极安装在其上形成微结构的透明基板的表面上的阴极附着步骤。

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