公开(公告)号：US20080186472A1

公开(公告)日：2008-08-07

申请号：US12023326

申请日：2008-01-31

Applicant: Jae-Woo Park ,  Chung-Sam Jun ,  Jang-Ik Park ,  Yu-Sin Yang

Inventor： Jae-Woo Park ,  Chung-Sam Jun ,  Jang-Ik Park ,  Yu-Sin Yang

IPC: G01J3/00 ,  G01N21/00 ,  G01J4/00

CPC classification number: G01N21/956 ,  G01J5/0003 ,  G01N21/55

Abstract: An apparatus for inspecting a wafer includes a light source, a detecting part and a signal analyzing part. The light source emits a light onto the wafer, and the detecting part detects a radiation light emitted from the wafer by the light and generates a signal. The signal analyzing part analyzes the signal generated by the detecting part and determines whether a defect has been formed on the wafer.

Abstract translation: 用于检查晶片的装置包括光源，检测部和信号分析部。 光源将光发射到晶片上，并且检测部分通过光检测从晶片发射的辐射光并产生信号。 信号分析部分分析由检测部分产生的信号，并确定是否在晶片上形成缺陷。

公开(公告)号：US07385689B2

公开(公告)日：2008-06-10

申请号：US11207772

申请日：2005-08-22

Applicant: Kye-Weon Kim ,  Chung-Sam Jun ,  Ki-Suk Chung ,  Sang-Mun Chon ,  Seong-Jin Kim ,  Byung-Sug Lee ,  Yu-Sin Yang

Inventor： Kye-Weon Kim ,  Chung-Sam Jun ,  Ki-Suk Chung ,  Sang-Mun Chon ,  Seong-Jin Kim ,  Byung-Sug Lee ,  Yu-Sin Yang

IPC: G01N21/00

CPC classification number: G01N21/21 ,  G01N21/33 ,  G01N21/9501 ,  G01N21/95607 ,  G01N2021/95615

Abstract: A method of inspecting an inspection pattern using a statistical inference function is disclosed. The inference function is generated in relation to optical reference signal data and reference pattern characteristic data for a plurality of reference patterns formed by a unit process of interest on reference substrates.

Abstract translation: 公开了使用统计推断功能检查检查图案的方法。 关于由参考基板上的感兴趣单元处理形成的多个参考图案的光参考信号数据和参考图案特征数据，产生推理函数。

公开(公告)号：US20080107329A1

公开(公告)日：2008-05-08

申请号：US11934972

申请日：2007-11-05

Applicant: Jong-An Kim ,  Yu-Sin Yang ,  Chung-Sam Jun ,  Moon-Shik Kang ,  Ji-Hye Kim

Inventor： Jong-An Kim ,  Yu-Sin Yang ,  Chung-Sam Jun ,  Moon-Shik Kang ,  Ji-Hye Kim

IPC: G06K9/00

CPC classification number: G06T7/0004 ,  G06T2207/30148

Abstract: In a method of detecting defects of patterns on a semiconductor substrate and an apparatus for performing the method information on positions of reference defects influencing an operation of a circuit including the patterns when the patterns are formed on the semiconductor substrate is acquired in advance. Preliminary defects of the patterns formed on the semiconductor substrate are detected. Positions of the preliminary defects of the patterns are compared with positions of the reference defects. The preliminary defects having the positions substantially the same as the positions of the reference defects are set to be defects of the patterns so that the actual defects are detected.

Abstract translation: 在半导体衬底上检测图案的缺陷的方法以及当在半导体衬底上形成图案时影响包括图案的电路的工作的参考缺陷的位置执行方法信息的装置的方法被预先获取。 检测在半导体衬底上形成的图案的初步缺陷。 将模式的初步缺陷的位置与参考缺陷的位置进行比较。 具有与参考缺陷的位置基本相同的位置的初步缺陷被设置为图案的缺陷，从而检测到实际的缺陷。

公开(公告)号：US20070222999A1

公开(公告)日：2007-09-27

申请号：US11710579

申请日：2007-02-26

Applicant: Yun-Jung Lee ,  Sun-Yong Choi ,  Chung-Sam Jun ,  Kwan-Woo Ryu

Inventor： Yun-Jung Lee ,  Sun-Yong Choi ,  Chung-Sam Jun ,  Kwan-Woo Ryu

IPC: G01R31/26

CPC classification number: G01N21/9501

Abstract: A method of monitoring a density profile of impurities, the method including presetting a monitoring position of a thin layer coated on a substrate, the density profile of impurities being monitored from the monitoring position in a direction of thickness of the thin layer, moving an exposer for exposing a local area of the thin layer to the monitoring position, exposing the local area of the thin layer along the direction of thickness of the thin layer, forming a shape profile of the exposed local area of the thin layer, and monitoring the density profile of impurities by determining a density of impurities in accordance with the shape profile, and an apparatus therefor. The impurity density profile may be monitored without destroying a substrate on which a thin layer is coated, and an amount of impurities used for forming the thin layer may be monitored and controlled in real-time.

Abstract translation: 一种监测杂质浓度分布的方法，该方法包括：预先设置涂覆在基材上的薄层的监测位置，从监测位置监测的杂质的浓度分布沿薄层厚度方向移动，移动曝光器 用于将薄层的局部区域暴露于监测位置，使薄层的局部区域沿着薄层的厚度方向暴露，形成薄层暴露局部区域的形状轮廓，并监测密度 通过根据形状轮廓确定杂质的密度来描述杂质，及其装置。 可以监测杂质浓度分布，而不会破坏其上涂覆有薄层的基底，并且可以实时监测和控制用于形成薄层的杂质的量。

公开(公告)号：US07274471B2

公开(公告)日：2007-09-25

申请号：US11012005

申请日：2004-12-13

Applicant: Koung-Su Shin ,  Kwang-Jun Yoon ,  Sun-Yong Choi ,  Chung-Sam Jun ,  Dong-Jin Park

Inventor： Koung-Su Shin ,  Kwang-Jun Yoon ,  Sun-Yong Choi ,  Chung-Sam Jun ,  Dong-Jin Park

IPC: G01B11/14

CPC classification number: G03F7/70616

Abstract: A system and method of measuring a distance of semiconductor patterns is provided. The system includes a microscope and a control unit. The control unit calculates standard coordinates of standard points in view-fields that include spots, spot coordinates of spots with respect to standard points, real coordinates of spots from both of the standard coordinates and spot coordinates, and finally the distance between the two spots from the first and second real coordinates. Coordinates are determined using high magnification, in conjunction with pixel counting, allowing more precise distance measurements.

Abstract translation: 提供了测量半导体图形的距离的系统和方法。 该系统包括显微镜和控制单元。 控制单元计算包括斑点，相对于标准点的点的点坐标，来自两个标准坐标和点坐标的点的实际坐标的视场中的标准点的标准坐标，以及最后两个点之间的距离 第一个和第二个实际坐标。 使用高倍率，结合像素计数确定坐标，允许更精确的距离测量。

公开(公告)号：US20070202615A1

公开(公告)日：2007-08-30

申请号：US11702599

申请日：2007-02-06

Applicant: Byung-Sug Lee ,  Mi-Sung Lee ,  Yu-Sin Yang ,  Yun-Jung Jee ,  Chung-Sam Jun

Inventor： Byung-Sug Lee ,  Mi-Sung Lee ,  Yu-Sin Yang ,  Yun-Jung Jee ,  Chung-Sam Jun

IPC: H01L21/66 ,  G01R31/26

CPC classification number: H01L22/12

Abstract: In a method of measuring a critical dimension for conductive structures or openings exposing conductive structures formed on a substrate, a corona ion charge is deposited on the conductive structures and/or an insulating layer having the openings in a measurement region of the substrate. The critical dimension of the conductive structures or the openings may be determined by comparing variations of a surface voltage caused by leakage current through the conductive structures with reference data to thereby improve reliability of the critical dimension measurement.

Abstract translation: 在测量形成在衬底上的导电结构的导电结构或开口的临界尺寸的方法中，电晕离子电荷沉积在导电结构和/或在衬底的测量区域中具有开口的绝缘层上。 可以通过将通过导电结构的漏电流引起的表面电压的变化与参考数据进行比较来确定导电结构或开口的临界尺寸，从而提高临界尺寸测量的可靠性。

公开(公告)号：US20070120054A1

公开(公告)日：2007-05-31

申请号：US11564726

申请日：2006-11-29

Applicant: Young-Jee YOON ,  Jung-Taek LIM ,  Tae-Sung KIM ,  Chung-Sam JUN ,  Sung-Hong PARK

Inventor： Young-Jee YOON ,  Jung-Taek LIM ,  Tae-Sung KIM ,  Chung-Sam JUN ,  Sung-Hong PARK

IPC: G01N23/00

CPC classification number: G01N23/203

Abstract: In an embodiment, a method of scanning a substrate, and a method and an apparatus for analyzing crystal characteristics are disclosed. A sequential scan on the scan areas using a first electron beam and a second electron beam are repeatedly performed. The electrons accumulated in the scan areas by the first electron beam are removed from the scan areas by the second electron beam. When a size of the scan area is substantially the same as a spot size of the first electron beam, adjacent scan areas partially overlap each other. When each of the scan areas is larger than a spot size of the first electron beam, the adjacent scan areas do not overlap each other. Images of the scan areas are generated using back-scattered electrons emitted from each of the scan areas by irradiating the first electron beam to analyze crystal characteristics of circuit patterns on the substrate.

Abstract translation: 在一个实施例中，公开了一种扫描衬底的方法，以及用于分析晶体特性的方法和装置。 使用第一电子束和第二电子束对扫描区域进行顺序扫描。 通过第二电子束从扫描区域去除由第一电子束累积在扫描区域中的电子。 当扫描区域的尺寸与第一电子束的光斑尺寸基本相同时，相邻的扫描区域彼此部分重叠。 当每个扫描区域大于第一电子束的光斑尺寸时，相邻的扫描区域彼此不重叠。 通过照射第一电子束来分析从每个扫描区域发射的背散射电子来分析扫描区域的图像，以分析衬底上的电路图案的晶体特性。

公开(公告)号：US07186577B2

公开(公告)日：2007-03-06

申请号：US10787772

申请日：2004-02-27

Applicant: Yun-Jung Jee ,  Sun-Yong Choi ,  Chung-Sam Jun ,  Kwan-Woo Ryu

Inventor： Yun-Jung Jee ,  Sun-Yong Choi ,  Chung-Sam Jun ,  Kwan-Woo Ryu

IPC: H01L21/66

CPC classification number: G01N21/9501

Abstract: A method of monitoring a density profile of impurities, the method including presetting a monitoring position of a thin layer coated on a substrate, the density profile of impurities being monitored from the monitoring position in a direction of thickness of the thin layer, moving an exposer for exposing a local area of the thin layer to the monitoring position, exposing the local area of the thin layer along the direction of thickness of the thin layer, forming a shape profile of the exposed local area of the thin layer, and monitoring the density profile of impurities by determining a density of impurities in accordance with the shape profile, and an apparatus therefor. The impurity density profile may be monitored without destroying a substrate on which a thin layer is coated, and an amount of impurities used for forming the thin layer may be monitored and controlled in real-time.

Abstract translation: 一种监测杂质浓度分布的方法，该方法包括：预先设置涂覆在基材上的薄层的监测位置，从监测位置监测的杂质的浓度分布沿薄层厚度方向移动，移动曝光器 用于将薄层的局部区域暴露于监测位置，使薄层的局部区域沿着薄层的厚度方向暴露，形成薄层暴露局部区域的形状轮廓，并监测密度 通过根据形状轮廓确定杂质的密度来描述杂质，及其装置。 可以监测杂质浓度分布，而不会破坏其上涂覆有薄层的基底，并且可以实时监测和控制用于形成薄层的杂质的量。

公开(公告)号：US20070030479A1

公开(公告)日：2007-02-08

申请号：US11462954

申请日：2006-08-07

Applicant: Sung-Hong PARK ,  Young-Jee YOON ,  Jung-Taek LIM ,  Chung-Sam JUN

Inventor： Sung-Hong PARK ,  Young-Jee YOON ,  Jung-Taek LIM ,  Chung-Sam JUN

IPC: G01N21/88

CPC classification number: G01N21/9501

Abstract: In a method, with improved utilization of memory, of inspecting a defect on an object, the object is divided into a plurality of inspection regions. A plurality of levels is determined according to the numbers of defects, which are expected before detecting the defects, on the inspection regions. The defects on a selected inspection region are detected. The level including a range, which corresponds to the number of defects detected on the selected inspection region, is assigned to the selected inspection region with reference to the number of defects detected on the selected inspection region. The steps of detecting defects and assigning levels are repeated with respect to remaining inspection regions.

Abstract translation: 在一种方法中，通过改善存储器的利用率，检查物体上的缺陷，物体被分成多个检查区域。 根据在检测区域之前预期的缺陷数量来确定多个级别。 检测到所选择的检查区域的缺陷。 参考在所选择的检查区域上检测到的缺陷的数量，将包括对应于在所选择的检查区域上检测到的缺陷数量的范围的级别分配给所选择的检查区域。 相对于剩余的检查区域重复检测缺陷和分配水平的步骤。

公开(公告)号：US20070030478A1

公开(公告)日：2007-02-08

申请号：US11461726

申请日：2006-08-01

Applicant: Moon-Kyung KIM ,  Chung-Sam JUN ,  Yu-Sin YANG

Inventor： Moon-Kyung KIM ,  Chung-Sam JUN ,  Yu-Sin YANG

IPC: G01N21/88

CPC classification number: G01N21/9501

Abstract: A defect inspecting apparatus includes a first support unit supporting a standard sample having standard defects, a second support unit supporting a wafer having target defects, a light source irradiating an incident light to the standard sample or the wafer, a light receiving part collecting reflection light reflected from the standard sample and the wafer, a detection part detecting the standard defects and the target defects by using the reflection light, a comparing part comparing information obtained using the reflection light reflected from the standard sample with a predetermined standard information of the standard defects to confirm a reliability of a step for detecting the target defects and a determination portion determining whether the step is allowed to be performed or not.

Abstract translation: 缺陷检查装置包括支撑具有标准缺陷的标准样品的第一支撑单元，支撑具有目标缺陷的晶片的第二支撑单元，向标准样品或晶片照射入射光的光源，收集反射光的光接收部 从标准样品和晶片反射的检测部分，通过使用反射光检测标准缺陷和目标缺陷的检测部分，将使用从标准样品反射的反射光获得的信息与标准缺陷的预定标准信息进行比较的比较部分 以确认用于检测目标缺陷的步骤的可靠性，并且确定部分确定是否允许执行该步骤。