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    Ink jet print head
    81.
    发明授权
    Ink jet print head 失效
    喷墨打印头

    公开(公告)号：US5666140A

    公开(公告)日：1997-09-09

    申请号：US228897

    申请日：1994-04-18

    Applicant: Masao Mitani ,  Kenji Yamada ,  Osamu Machida

    Inventor： Masao Mitani ,  Kenji Yamada ,  Osamu Machida

    IPC: B41J2/14 ,  B41J2/16 ,  B41J11/00 ,  B41J2/05

    CPC classification number: B41J2/1635 ,  B41J11/002 ,  B41J11/0085 ,  B41J2/1404 ,  B41J2/14129 ,  B41J2/1603 ,  B41J2/1623 ,  B41J2/1626 ,  B41J2/1643 ,  B41J2202/03

    Abstract: An ink jet print head includes: a monolithic silicon substrate having a top surface; a plurality of chamber walls for defining a plurality of ink chambers on the top surface of the silicon substrate, the plurality of ink chambers being aligned in a first direction into a row extending along the top surface of the silicon substrate, each of the plurality of ink chambers being filled with ink, each chamber wall having a nozzle portion for defining a nozzle of a plurality of nozzles, each nozzle portion being formed so that each nozzle is in fluid communication with a respective ink chamber, the plurality of nozzles being aligned in the first direction into a row extending parallel to the top surface of the silicon substrate; an integrated circuit provided on the top surface of the silicon substrate and located adjacent to the plurality of ink chambers for outputting pulsed electric current; and a plurality of thermal resistors provided on the top surface of the silicon substrate each being located in a corresponding ink chamber of the plurality of ink chambers, each of the plurality of thermal resistors including a thin-film resistor. the thin-film resistor being made of a material selected from a group consisting of Ta--Si--SiO alloy and Cr--Si--SiO alloy, the thin-film conductor being made of a material selected from a group consisting of tungsten and nickel.

    Abstract translation: 一种喷墨打印头包括：具有顶表面的单片硅基板; 多个室壁，用于在硅衬底的顶表面上限定多个墨室，所述多个墨室沿着第一方向排列成沿着硅衬底的顶表面延伸的一排， 每个室壁具有用于限定多个喷嘴的喷嘴的喷嘴部分，每个喷嘴部分形成为使得每个喷嘴与相应的墨水室流体连通，多个喷嘴对准在 所述第一方向平行于所述硅衬底的顶表面延伸成一行; 集成电路，其设置在所述硅基板的顶表面上，并位于所述多个墨室附近，用于输出脉冲电流; 以及设置在所述硅基板的上表面上的多个热电阻器，每个位于所述多个墨水腔室的相应的墨水室中，所述多个热敏电阻器中的每一个包括薄膜电阻器。 所述薄膜电阻器由选自由Ta-Si-SiO合金和Cr-Si-SiO合金组成的组中的材料制成，所述薄膜导体由选自钨和镍的材料制成。

    Method of producing piezoelectric actuator
    86.
    发明授权
    Method of producing piezoelectric actuator 有权
    压电致动器的制造方法

    公开(公告)号：US08713768B2

    公开(公告)日：2014-05-06

    申请号：US13416055

    申请日：2012-03-09

    Applicant: Yasuhiro Watanabe ,  Osamu Machida ,  Akira Shimofuku ,  Ryoh Tashiro

    Inventor： Yasuhiro Watanabe ,  Osamu Machida ,  Akira Shimofuku ,  Ryoh Tashiro

    IPC: B41J2/045 ,  H01L41/22

    CPC classification number: B41J2/14233 ,  H01L41/0973 ,  H01L41/317 ,  H01L41/33

    Abstract: A method of producing a piezoelectric actuator includes a first electrode film forming process; a monomolecular film forming process; a pattering process of removing a monomolecular film having a rectangular shape; an application process of applying a precursor solution to the first electrode film exposed in the rectangular shape; a piezoelectric film forming process of converting the applied precursor solution into a piezoelectric film; and a second electrode film forming process. Materials of the precursor solution, the first electrode film, and the monomolecular film are adjusted so that the first electrode film is lyophilic and the monomolecular film is lyophobic to the precursor solution. The piezoelectric film forming process includes a drying and thermally decomposing process of drying and thermally decomposing the precursor solution; and a crystallizing process of crystallizing a thermally decomposed piezoelectric material.

    Abstract translation: 制造压电致动器的方法包括：第一电极膜形成工序; 单分子成膜工艺; 去除具有矩形形状的单分子膜的图案化方法; 将前体溶液施加到以矩形形状暴露的第一电极膜的施加方法; 将所施加的前体溶液转化成压电膜的压电膜形成方法; 和第二电极膜形成工艺。 调节前体溶液，第一电极膜和单分子膜的材料，使得第一电极膜是亲液性的，并且单分子膜与前体溶液疏液。 压电薄膜形成方法包括干燥和热分解前体溶液的热分解过程; 以及结晶热分解压电材料的结晶过程。

    Semiconductor device having transistor and rectifier
    87.
    发明授权
    Semiconductor device having transistor and rectifier 有权

    公开(公告)号：US08421123B2

    公开(公告)日：2013-04-16

    申请号：US13084777

    申请日：2011-04-12

    Applicant: Osamu Machida ,  Akio Iwabuchi

    Inventor： Osamu Machida ,  Akio Iwabuchi

    IPC: H01L29/778

    CPC classification number: H01L29/7787 ,  H01L27/0605 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/872

    Abstract: A semiconductor device having a transistor and a rectifier includes: a current path; a first main electrode having a rectifying function and arranged on one end of the current path; a second main electrode arranged on the other end of the current path; an auxiliary electrode arranged in a region of the current path between the first main electrode and the second main electrode; a third main electrode arranged on the one end of the current path apart from the first main electrode along a direction intersecting the current path; and a control electrode arranged in a region of the current path between the second main electrode and the third main electrode. The transistor includes the current path, the second main electrode, the third main electrode, and the control electrode. The rectifier includes the current path, the first main electrode, the second main electrode, and the auxiliary electrode.

    METHOD OF MANUFACTURING ELECTROMECHANICAL TRANSDUCER ELEMENT, ELECTROMECHANICAL TRANSDUCER ELEMENT, DISCHARGING HEAD, AND INKJET RECORDING DEVICE
    88.
    发明申请
    METHOD OF MANUFACTURING ELECTROMECHANICAL TRANSDUCER ELEMENT, ELECTROMECHANICAL TRANSDUCER ELEMENT, DISCHARGING HEAD, AND INKJET RECORDING DEVICE 有权
    制造机电传感器元件，机电传感器元件，放电头和喷墨记录装置的方法

    公开(公告)号：US20130070028A1

    公开(公告)日：2013-03-21

    申请号：US13612717

    申请日：2012-09-12

    Applicant: Yasuhiro Watanabe ,  Osamu Machida ,  Akira Shimofuku ,  Ryo Tashiro

    Inventor： Yasuhiro Watanabe ,  Osamu Machida ,  Akira Shimofuku ,  Ryo Tashiro

    IPC: H01L41/22 ,  B41J2/045 ,  H01L41/04

    CPC classification number: H01L41/0973 ,  B41J2/161 ,  H01L41/318 ,  H01L41/331

    Abstract: Disclosed is a method of manufacturing an electromechanical transducer element including a first process of hydrophobizing a first area of an electrode by forming a self-assembled monolayer film; a second process of applying a sol-gel solution onto a predetermined second area of the electrode so as to produce a complex oxide; a third process of producing the complex oxide by calcining the electrode; a fourth process of acid-washing the electrode on which the complex oxide has been produced; a fifth process of hydrophobizing the first area of the acid-washed electrode by forming the self-assembled monolayer film; a sixth process of applying the sol-gel solution onto the predetermined second area; and a seventh process of producing the complex oxide by calcining the electrode.

    Abstract translation: 公开了一种制造机电换能器元件的方法，其包括通过形成自组装单层膜来疏水化电极的第一区域的第一工艺; 将溶胶 - 凝胶溶液施加到电极的预定的第二区域上以产生复合氧化物的第二种方法; 通过煅烧电极制造复合氧化物的第三种方法; 对生成了复合氧化物的电极进行酸洗的第四工序; 通过形成自组装单层膜来疏水酸洗电极的第一区域的第五种方法; 将溶胶 - 凝胶溶液施加到预定的第二区域上的第六种方法; 以及通过煅烧电极制造复合氧化物的第七种方法。

    METHOD OF FORMING ELECTROMECHANICAL TRANSDUCER FILM, ELECTROMECHANICAL TRANSDUCER FILM, ELECTROMECHANICAL TRANSDUCER ELEMENT, AND LIQUID DISCHARGE HEAD
    89.
    发明申请
    METHOD OF FORMING ELECTROMECHANICAL TRANSDUCER FILM, ELECTROMECHANICAL TRANSDUCER FILM, ELECTROMECHANICAL TRANSDUCER ELEMENT, AND LIQUID DISCHARGE HEAD 有权
    形成机电传感器膜的方法，机电传感器膜，机电传感器元件和液体放电头

    公开(公告)号：US20120314007A1

    公开(公告)日：2012-12-13

    申请号：US13486075

    申请日：2012-06-01

    Applicant: Akira Shimofuku ,  Osamu Machida ,  Ryoh Tashiro ,  Yasuhiro Watanabe

    Inventor： Akira Shimofuku ,  Osamu Machida ,  Ryoh Tashiro ,  Yasuhiro Watanabe

    IPC: B41J2/045

    CPC classification number: B41J2/14201 ,  B41J2/161 ,  B41J2/164 ,  H01L41/047 ,  H01L41/318 ,  H01L41/331

    Abstract: Disclosed is an electromechanical transducer film forming method including a surface modification process; an application process; and processes of drying, thermally decomposing, and crystallizing sol-gel solution applied to a portion of a surface of a first electrode. An electromechanical transducer film is formed on a desired pattern area on the surface of the first electrode by repeating the above processes. In the application process, each of dots of the sol-gel solution applied by the inkjet method drops onto both a first area inside the desired pattern area and a second area outside the desired pattern area. The first area is a hydrophilic area on the surface of the first electrode, and the second area is a hydrophobic area on the surface of the first electrode. The hydrophilic area and the hydrophobic area have been modified by the surface modification process.

    Abstract translation: 公开了一种包括表面改性工艺的机电换能器成膜方法; 申请流程; 以及施加到第一电极表面的一部分上的溶胶 - 凝胶溶液的干燥，热分解和结晶过程。 通过重复上述过程，在第一电极的表面上的期望图案区域上形成机电换能器膜。 在涂布过程中，通过喷墨法施加的溶胶 - 凝胶溶液的每个点落在期望图案区域内的第一区域和期望图案区域外的第二区域上。 第一区域是第一电极表面上的亲水区域，第二区域是第一电极表面上的疏水区域。 亲水区域和疏水区域已经通过表面改性过程进行了修饰。

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