Abstract:
An upper bus electrode is formed as a laminated wire of a metal film lower layer, a metal film intermediate layer and a metal film upper layer. Al lower in electrode potential is used as a low resistance material for the metal film intermediate layer of the upper bus electrode, while Cr high in heat resistance and oxidation resistance and higher in electrode potential than Al is used for the metal film lower and upper layers disposed as upper and lower layers. Al and Cr are selectively etched so that the metal film lower layer projects on one side and has an undercut on the other side with respect to the metal film intermediate layer. Thus, when the upper bus electrode has a structure using a laminated wire made of metal high in heat resistance and oxidation resistance, and metal low in resistance and sandwiched in the metal high in heat resistance and oxidation resistance, so as to separate an upper electrode from upper electrodes by self-alignment, deformation of the undercut portion due to oxidization of a side surface of the low-resistance metal is suppressed to improve the self-alignment separation characteristic of the upper electrode.
Abstract:
A substrate with plane patterns formed in a liquid process wherein the plane patterns are formed based on a combination of plane shapes by which a difference in internal pressure of a solution between any two points of the solution is small, the solution being ejected onto the substrate so as to form the plane patterns by the liquid process.
Abstract:
A tip of a wire is bonded to a first electrode by using a tool. The wire is drawn from the first electrode to a bump on a second electrode. Apart of the wire is bonded to the center of the bump or a portion of the bump beyond the center in a drawing direction of the wire by using a part of the tool on a first electrode side in the drawing direction of the wire.
Abstract:
A liquid crystal display device has image signal lines of a bottom gate type TFT, in which the image signal lines comprise a laminated film formed of a first conductive film disposed as a lower layer and a second conductive film disposed as an upper layer. The first conductive film is made of an alloy comprising Mo as a main ingredient and W, and the second conductive film is made of an alloy comprising Mo as a main ingredient and Zr. The device is capable of satisfying requirements of reduced resistance, improved dry etching resistance, selective wet etching with respect to the gate insulative film, the number of laminated layer of two or less, and tapered fabrication for the cross section.
Abstract:
A wiring structure is provided, the wiring structure being formed by forming a laminated film of silver (Ag) or an alloy containing silver (Ag) as the major constituent and the other metallic material, and by forming a wiring pattern through a single process of photolithography. The wiring structure comprises a plurality of first parallel wires; a plurality of second parallel wires intersecting with the first parallel wires; and a plurality of active elements, each of the active elements being arranged at a position near an intersection of the first parallel wire and the second parallel wire and connected to the first parallel wire and the second parallel wire, wherein part or all of the first parallel wires and the second parallel wires are of a laminated structure of a layer made of silver (Ag) or an alloy containing silver (Ag) as a major constituent and a layer made of a metallic element having standard electrode potential of dissolution reaction lower than the standard electrode potential of silver (Ag) or an alloy containing said metallic element as a major constituent, and are formed through a single process of photolithography.
Abstract:
In an information service system whereby a server apparatus distributes music performance data to a telephony terminal apparatus through a network, the telephony terminal apparatus includes a storage section that stores an application program to be executed by a processing section for sending to the server apparatus a search query effective to specify target music performance data and acquiring the target music performance data from the server apparatus for exclusive use by the application program. In the server apparatus, a first distributing section responds to the search query in the form of contents that are dedicated for use by the application program. A second distributing section of the server apparatus responds to a request from the telephony terminal apparatus for distributing second contents of the same target music performance data to the telephony terminal apparatus such that the second contents can be treated by the telephony terminal apparatus independently of the application program.
Abstract:
The method of fabrication of a liquid crystal display device includes the steps of: forming a metal thin film on a glass substrate; forming a resist pattern on the metal thin film by photolithography; and wet-etching the metal thin film with an etchant formed of a mixture including phosphoric acid, nitric acid in a range between 7 mol % and 12 mol % inclusive, and at least one of ammonium fluoride and hydrogen fluoride in a trace amount of about 0.01 to 0.1 mol %.
Abstract:
A semiconductor device with a thickness of 1 mm or less is disclosed, that comprises a frame plate main body with a thickness in the range from 0.1 mm to 0.25 mm, a semiconductor pellet disposed on a first surface of the frame plate main body and with a thickness in the range from 0.2 mm to 0.3 mm, an external connection lead, one end thereof being connected to a peripheral portion of the first surface of the frame plate main body, the other end thereof extending to the outside of the frame plate main body, a bonding wire for electrically connecting an electrode of the semiconductor pellet and a connection portion of the end of the external connection lead, and a sealing resin layer for covering and sealing at least a region including the semiconductor pellet, the bonding wire, and a connection portion.