SEMICONDUCTOR ELEMENT BONDING STRUCTURE, METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT BONDING STRUCTURE, AND ELECTRICALLY CONDUCTIVE BONDING AGENT

    公开(公告)号:US20210225794A1

    公开(公告)日:2021-07-22

    申请号:US17187452

    申请日:2021-02-26

    Abstract: A semiconductor element bonding structure capable of strongly bonding a semiconductor element and an object to be bonded and relaxing thermal stress caused by a difference in thermal expansion, by interposing metal particles and Ni between the semiconductor element and the object to be bonded, the metal particles having a lower hardness than Ni and having a micro-sized particle diameter. A plurality of metal particles 5 (aluminum (Al), for example) having a lower hardness than nickel (Ni) and having a micro-sized particle diameter are interposed between a semiconductor chip 3 and a substrate 2 to be bonded to the semiconductor chip 3, and the metal particles 5 are fixedly bonded by the nickel (Ni). Optionally, aluminum (Al) or an aluminum alloy (Al alloy) is used as the metal particles 5, and aluminum (Al) or an aluminum alloy (Al alloy) is used on the surface of the semiconductor chip 3 and/or the surface of the substrate 2.

    PRODUCTION METHOD FOR METHANE HYDRATE USING RESERVOIR GROUTING

    公开(公告)号:US20210222536A1

    公开(公告)日:2021-07-22

    申请号:US17256014

    申请日:2018-09-11

    Abstract: [Problem] In the production of sand reservoir type methane hydrate, there are problems, such as compaction of reservoir or production of sand in the mine, and the effect of existing methods to counter the production of sand is inadequate.
    [Solution] The present invention can prevent the fluidization of sand occurred when methane hydrate is decomposed by injecting a grouting agent capable of adequately adhere sand particles into gaps (pore gaps) within sand particles which are unsolidified or weakly solidified and constitute the reservoir to be developed. In addition, provided is a technique capable of suppressing the production of sand in the mine, contributing to the stable production of gas, by injecting a filling material into the target reservoir around a mine well and thus constructing a porous grouting body having sufficient strength and good permeability. Further, the present invention also performs permeability restoration measures such as hydraulic fracturing or chemical treatment on the reservoir which has been subjected to the abovementioned grouting, thereby achieving both of stabilization of the reservoir and productivity of gas.

    TRANSGENIC PLANT EXHIBITING ENHANCED GROWTH AND METHOD FOR PRODUCING SAME

    公开(公告)号:US20200277618A1

    公开(公告)日:2020-09-03

    申请号:US16828146

    申请日:2020-03-24

    Abstract: A transgenic plant which exhibits a growth capacity which is enhanced compared to that of a host plant, and has a chimeric protein of a peptide containing an amino acid sequence derived from a motor domain of myosin XI of a donor plant 1, which is a plant species other than the host plant, and a peptide containing an amino acid sequence derived from a domain other than the motor domain of myosin XI of a donor plant 2, which is the host plant or a plant species other than the host plant, the transgenic plant being characterized in that the motor domain loop 2 region has EEPKQGGKGGGKSSFSSIG or EEPKQGGGKGGSKSSFSSIG, and in addition to these sequences, has an amino acid sequence in which one to six amino acids have been deleted, replaced or added.

    Parallel program generating method and parallelization compiling apparatus

    公开(公告)号:US10698670B2

    公开(公告)日:2020-06-30

    申请号:US15856306

    申请日:2017-12-28

    Abstract: There is provided a parallel program generating method capable of generating a static scheduling enabled parallel program without undermining the possibility of extracting parallelism. The parallel program generating method executed by the parallelization compiling apparatus 100 includes a fusion step (FIG. 2/STEP026) of fusing, as a new task, a task group including a reference task as a task having a conditional branch, and subsequent tasks as tasks control dependent, extended-control dependent, or indirect control dependent on respective of all branch directions of the conditional branch included in the reference task.

    SEMICONDUCTOR DEVICE
    89.
    发明申请

    公开(公告)号:US20190229103A1

    公开(公告)日:2019-07-25

    申请号:US16257722

    申请日:2019-01-25

    Abstract: A semiconductor device includes: a first switching element that is provided on a high side; a first diode element that is connected in parallel to the first switching element; a second switching element that is provide on a low side and connected in series to the first switching element; and a second diode element that is connected in parallel to the second switching element, wherein the first switching element and one of the first diode element and the second diode element are stacked adjacently to each other in a vertical direction of respective electrode surfaces thereof via a conductive electrode, the second switching element and the other of the first diode element and the second diode element that is different from the diode element adjacent to the first switching element are stacked adjacently to each other in a vertical direction of respective electrode surfaces thereof via a conductive electrode, and the first switching element and the second switching element are not adjacent in a vertical direction of respective electrode surfaces thereof.

    Self-repairing wiring
    90.
    发明授权

    公开(公告)号:US10356896B2

    公开(公告)日:2019-07-16

    申请号:US15241871

    申请日:2016-08-19

    Abstract: A self-healing wire includes, an electric wire arranged on a substrate, and a hybrid structure in which the electric wire is covered with at least one fluid selected from the group consisting of a fluid having conductive particles dispersed therein and a fluid having metal ions dissolved therein, formed on a healing portion for a crack to be generated in the electric wire. And a stretchable device includes the self-healing wire formed on a stretchable base material and an electric element mounted only on a base material higher in rigidity than the stretchable base material. Even when a crack is generated in the electric wire due to stretching of the substrate having flexibility, the crack is bridged by the conductive particles or a solid metal deposited from the metal ions in the fluid. Thus the self-healing wire and the stretchable device having both high conductivity and high stretchability are provided.

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