Abstract:
The disclosure relates a projection objective of a microlithographic projection exposure apparatus. In some embodiments, the apparatus is configured to project a mask which can positioned in an object plane onto a light-sensitive layer which can be positioned in an image plane. The projection objective can include a last optical element at the image plane side having a light entrance surface and a light exit surface. The projection objective can also include an immersion liquid is arranged in a region between the light exit surface and the image plane. At a working wavelength of the projection objective, the immersion liquid can have a refractive index of at least 1.5. At least one interface between the light entrance surface of the last optical element at the image plane side and the immersion liquid can have at least region-wise a microstructuring.
Abstract:
In some embodiments, a projection objective for lithography includes an optical arrangement of optical elements between an object plane and an image plane. The arrangement generally has at least one intermediate image plane, the arrangement further having at least two correction elements for correcting aberrations, of which a first correction element is arranged optically at least in the vicinity of a pupil plane and a second correction element is arranged in a region which is not optically near either a pupil plane or a field plane.
Abstract:
Projection exposure methods and systems for exposing substrates are disclosed. The methods and systems feature projection objectives capable of multiple exposure configurations having different image side numerical apertures and different image field sizes.
Abstract:
A reduction projection objective for projection lithography has a plurality of optical elements configured to image an effective object field arranged in an object surface of the projection objective into an effective image field arranged in an image surface of the projection objective at a reducing magnification ratio |β|