公开(公告)号：US20170221951A1

公开(公告)日：2017-08-03

申请号：US15014787

申请日：2016-02-03

Applicant: OmniVision Technologies, Inc.

Inventor： Yuanwei Zheng ,  Gang Chen ,  Duli Mao ,  Dyson Tai

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/14621 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/1469

Abstract: A method of image sensor fabrication includes providing a semiconductor material, an insulation layer, and a logic layer, where the semiconductor material includes a plurality of photodiodes. A through-semiconductor-via is formed which extends from the semiconductor material, through the insulation layer, and into the logic layer. The through-semiconductor-via is capped with a capping layer. A metal pad is disposed in a first trench in the semiconductor material. Insulating material is deposited on the capping layer, and in the first trench in the semiconductor material. A resist is deposited in a second trench in the insulating material, and the second trench in the insulating material is aligned with the metal pad. The insulating material is removed to expose the capping layer, and a portion of the capping layer disposed proximate to the plurality of photodiodes is also removed. A metal grid is formed proximate to the plurality of photodiodes.

公开(公告)号：US09653511B2

公开(公告)日：2017-05-16

申请号：US14823683

申请日：2015-08-11

Applicant: OmniVision Technologies, Inc.

Inventor： Gang Chen ,  Duli Mao ,  Dyson Hsinchin Tai

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14689

Abstract: A complementary metal oxide semiconductor (CMOS) image sensor with peninsular ground contacts includes (a) a substrate having a plurality of pixel units arranged in rows of pixel units and (b) a plurality of ground contacts for grounding the pixel units, wherein the ground contacts are formed in respective peninsular regions of the substrate within respective ones of the pixel units, and wherein each of the peninsular regions is only partly enclosed by a shallow trench isolation and the peninsular regions have alternating orientation along each of the rows of pixel units.

公开(公告)号：US09565405B2

公开(公告)日：2017-02-07

申请号：US14612961

申请日：2015-02-03

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Dominic Massetti ,  Chih-Wei Hsiung ,  Arvind Kumar ,  Yuanwei Zheng ,  Duli Mao ,  Dyson H. Tai

IPC: H04N9/04 ,  H01L27/146 ,  H04N5/3745

CPC classification number: H04N9/045 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14647 ,  H04N5/37457

Abstract: A back side illuminated image sensor includes a pixel array including semiconductor material, and image sensor circuitry disposed on a front side of the semiconductor material to control operation of the pixel array. A first pixel includes a first doped region disposed proximate to a back side of the semiconductor material and extends into the semiconductor material a first depth to reach the image sensor circuitry. A second pixel with a second doped region is disposed proximate to the back side of the semiconductor material and extends into the semiconductor material a second depth which is less than the first depth. A third doped region is disposed between the second doped region and the image sensor circuitry on the front side of the semiconductor material. The third doped region is electrically isolated from the first doped region and the second doped region.

Abstract translation: 背面照明图像传感器包括包括半导体材料的像素阵列和设置在半导体材料的前侧上以控制像素阵列的操作的图像传感器电路。 第一像素包括靠近半导体材料的背面设置的第一掺杂区域，并延伸到半导体材料中以到达图像传感器电路的第一深度。 具有第二掺杂区域的第二像素设置在半导体材料的背面附近并且延伸到半导体材料中的比第一深度小的第二深度。 第三掺杂区域设置在半导体材料的前侧上的第二掺杂区域和图像传感器电路之间。 第三掺杂区域与第一掺杂区域和第二掺杂区域电隔离。

公开(公告)号：US20160165165A1

公开(公告)日：2016-06-09

申请号：US14559733

申请日：2014-12-03

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Qingfei Chen ,  Duli Mao ,  Han Lei Lock ,  Qingwei Shan

IPC: H04N5/374 ,  H04N5/63 ,  H04N5/378

CPC classification number: H04N5/3741 ,  H04N5/335 ,  H04N5/378 ,  H04N5/63

Abstract: A reset level in a pixel cell is boosted by switching ON a reset transistor of the pixel cell to charge the floating diffusion to a first reset level during a reset operation. A select transistor is switched from OFF to ON during the floating diffusion reset operation to discharge an output terminal of an amplifier transistor. The reset transistor is switched OFF after the output terminal of the amplifier transistor has been discharged in response to the switching ON of the select transistor. The output terminal of the amplifier transistor charges to a static level after being discharged. The floating diffusion coupled to the input terminal of the amplifier transistor follows the output terminal of the amplifier transistor across an amplifier capacitance coupled between the input terminal and the output terminal of the amplifier transistor to boost the reset level of the floating diffusion.

Abstract translation: 通过在复位操作期间接通像素单元的复位晶体管以将浮动扩散充电到第一复位电平来提高像素单元中的复位电平。 在浮动扩散复位操作期间，选择晶体管从OFF切换到ON，以放大放大器晶体管的输出端。 在放大晶体管的输出端已响应于选择晶体管的导通而放电之后，复位晶体管截止。 放大器晶体管的输出端子在放电后充电到静态电平。 耦合到放大器晶体管的输入端的浮动扩散器沿着放大器晶体管的输出端连接放大器电容，该放大器电容耦合在放大器晶体管的输入端和输出端之间，以提高浮置扩散的复位电平。

公开(公告)号：US09240431B1

公开(公告)日：2016-01-19

申请号：US14790330

申请日：2015-07-02

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yuanwei Zheng ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai ,  Chih-Wei Hsiung ,  Arvind Kumar

IPC: H01L21/00 ,  H01L27/146

CPC classification number: H01L27/14687 ,  H01L21/76224 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689

Abstract: An image sensor including a plurality of photodiodes disposed in a semiconductor layer and a plurality of deep trench isolation regions disposed in the semiconductor layer. The plurality of deep trench isolation regions include: (1) an oxide layer disposed on an inner surface of the plurality of deep trench isolation regions and (2) a conductive fill disposed in the plurality of deep trench isolation regions where the oxide layer is disposed between the semiconductor layer and the conductive fill. A plurality of pinning wells is also disposed in the semiconductor layer, and the plurality of pinning wells in combination with the plurality of deep trench isolation regions separate individual photodiodes in the plurality of photodiodes. A fixed charge layer is disposed on the semiconductor layer, and the plurality of deep trench isolation regions are disposed between the plurality of pinning wells and the fixed charge layer.

公开(公告)号：US09231015B2

公开(公告)日：2016-01-05

申请号：US13625458

申请日：2012-09-24

Applicant: OmniVision Technologies, Inc.

Inventor： Gang Chen ,  Duli Mao ,  Dyson Hsinchih Tai

IPC: H04N5/222 ,  H01L27/146 ,  H04N5/225 ,  H04N5/376 ,  H04N5/247 ,  H01L31/101 ,  H01L31/09

CPC classification number: H01L27/14645 ,  H01L27/1464 ,  H01L31/09 ,  H01L31/1013 ,  H04N5/222 ,  H04N5/2251 ,  H04N5/247 ,  H04N5/376

Abstract: A monolithic backside-sensor-illumination (BSI) image sensor has a sensor array is tiled with a multiple-pixel cells having a first pixel sensor primarily sensitive to red light, a second pixel sensor primarily sensitive to red and green light, and a third pixel sensor having panchromatic sensitivity, the pixel sensors laterally adjacent each other. The image sensor determines a red, a green, and a blue signal comprising by reading the red-sensitive pixel sensor of each multiple-pixel cell to determine the red signal, reading the sensor primarily sensitive to red and green light to determine a yellow signal and subtracting the red signal to determine a green signal. The image sensor reads the panchromatic-sensitive pixel sensor to determine a white signal and subtracts the yellow signal to provide the blue signal.

Abstract translation: 单片背面传感器照明（BSI）图像传感器具有传感器阵列，其具有具有主要对红光敏感的第一像素传感器的多像素单元，对红色和绿色光敏感的第二像素传感器，以及第三像素传感器 像素传感器具有全色灵敏度，像素传感器横向相邻。 图像传感器确定红色，绿色和蓝色信号，其包括通过读取每个多像素单元的红色敏感像素传感器来确定红色信号，读取对红色和绿色光敏感的传感器以确定黄色信号 并减去红色信号以确定绿色信号。 图像传感器读取全色敏感像素传感器以确定白色信号，并减去黄色信号以提供蓝色信号。

公开(公告)号：US09177982B2

公开(公告)日：2015-11-03

申请号：US14319807

申请日：2014-06-30

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Dyson H. Tai ,  Vincent Venezia ,  Yin Qian ,  Gang Chen ,  Howard E. Rhodes

IPC: H01L27/146

CPC classification number: H01L27/1462 ,  H01L27/14623 ,  H01L27/1464 ,  H01L27/14685

Abstract: A backside illuminated image sensor includes a semiconductor layer and a trench disposed in the semiconductor layer. The semiconductor layer has a frontside surface and a backside surface. The semiconductor layer includes a light sensing element of a pixel array disposed in a sensor array region of the semiconductor layer. The pixel array is positioned to receive external incoming light through the backside surface of the semiconductor layer. The semiconductor layer also includes a light emitting element disposed in a periphery circuit region of the semiconductor layer external to the sensor array region. The trench is disposed in the semiconductor layer between the light sensing element and the light emitting element.

Abstract translation: 背面照明图像传感器包括设置在半导体层中的半导体层和沟槽。 半导体层具有前表面和背面。 半导体层包括设置在半导体层的传感器阵列区域中的像素阵列的光感测元件。 像素阵列被定位成接收穿过半导体层的背面的外部入射光。 半导体层还包括设置在传感器阵列区域外部的半导体层的外围电路区域中的发光元件。 沟槽设置在光感测元件和发光元件之间的半导体层中。

公开(公告)号：US09142581B2

公开(公告)日：2015-09-22

申请号：US13669107

申请日：2012-11-05

Applicant: OmniVision Technologies, Inc.

Inventor： Yin Qian ,  Hsin-Chih Tai ,  Tiejun Dai ,  Duli Mao ,  Cunyu Yang ,  Howard E. Rhodes

IPC: H01L27/146 ,  H01L23/58 ,  H01L23/00

CPC classification number: H01L27/1469 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/585 ,  H01L24/05 ,  H01L24/08 ,  H01L24/94 ,  H01L27/14618 ,  H01L27/14636 ,  H01L27/14683 ,  H01L27/14689 ,  H01L2224/04042 ,  H01L2224/05567 ,  H01L2224/08145 ,  H01L2224/80896 ,  H01L2224/9202 ,  H01L2224/9212 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12043 ,  H01L2924/1434 ,  H01L2924/37001 ,  H01L2224/80 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2224/8203 ,  H01L2224/821 ,  H01L2224/80001 ,  H01L2224/82

Abstract: An integrated circuit system includes a first device wafer bonded to a second device wafer at a bonding interface of dielectrics. Each wafer includes a plurality of dies, where each die includes a device, a metal stack, and a seal ring that is formed at an edge region of the die. Seal rings included in dies of the second device wafer each include a first conductive path provided with metal formed in a first opening that extends from a backside of the second device wafer, through the second device wafer, and through the bonding interface to the seal ring of a corresponding die in the first device wafer.

Abstract translation: 集成电路系统包括在电介质的接合界面处结合到第二器件晶片的第一器件晶片。 每个晶片包括多个模具，其中每个模具包括形成在模具的边缘区域处的装置，金属堆叠和密封环。 包括在第二器件晶片的管芯中的密封圈各自包括设置有金属的第一导电路径，所述第一导电路径形成在从第二器件晶片的背面延伸穿过第二器件晶片的第一开口中，并且通过接合界面到达密封环 在第一器件晶片中的相应管芯。

公开(公告)号：US09111993B1

公开(公告)日：2015-08-18

申请号：US14465054

申请日：2014-08-21

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yuanwei Zheng ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai ,  Chih-Wei Hsiung ,  Arvind Kumar

IPC: H01L21/76 ,  H01L21/762

CPC classification number: H01L27/14687 ,  H01L21/76224 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689

Abstract: An image sensor including a plurality of photodiodes disposed in a semiconductor layer and a plurality of deep trench isolation regions disposed in the semiconductor layer. The plurality of deep trench isolation regions include: (1) an oxide layer disposed on an inner surface of the plurality of deep trench isolation regions and (2) a conductive fill disposed in the plurality of deep trench isolation regions where the oxide layer is disposed between the semiconductor layer and the conductive fill. A plurality of pinning wells is also disposed in the semiconductor layer, and the plurality of pinning wells in combination with the plurality of deep trench isolation regions separate individual photodiodes in the plurality of photodiodes. A fixed charge layer is disposed on the semiconductor layer, and the plurality of deep trench isolation regions are disposed between the plurality of pinning wells and the fixed charge layer.

Abstract translation: 包括设置在半导体层中的多个光电二极管和设置在半导体层中的多个深沟槽隔离区域的图像传感器。 多个深沟槽隔离区域包括：（1）设置在多个深沟槽隔离区域的内表面上的氧化物层和（2）设置在多个深沟槽隔离区域中的导电填料，其中设置氧化物层 在半导体层和导电填料之间。 多个钉扎阱也设置在半导体层中，并且多个钉扎阱与多个深沟槽隔离区域组合分离多个光电二极管中的各个光电二极管。 固定电荷层设置在半导体层上，多个深沟槽隔离区设置在多个钉扎阱和固定电荷层之间。

公开(公告)号：US20150123172A1

公开(公告)日：2015-05-07

申请号：US14070286

申请日：2013-11-01

Applicant: OmniVision Technologies, Inc.

Inventor： Gang Chen ,  Duli Mao ,  Dajiang Yang ,  Zhibin Xiong ,  Dyson H. Tai

IPC: H01L27/148

CPC classification number: H01L27/14614 ,  H01L27/14621 ,  H01L27/14641 ,  H01L27/14645

Abstract: An image sensor pixel for use in a high dynamic range image sensor includes a first photodiode, a plurality of photodiodes, a shared floating diffusion region, a first transfer gate, and a second transfer gate. The first photodiode is disposed in a semiconductor material. The first photodiode has a first light exposure area and a first doping concentration. The plurality of photodiodes is also disposed in the semiconductor material. Each photodiode in the plurality of photodiodes has the first light exposure area and the first doping concentration. The first transfer gate is coupled to transfer first image charge from the first photodiode to the shared floating diffusion region. The second transfer gate is coupled to transfer distributed image charge from each photodiode in the plurality of photodiodes to the shared floating diffusion region.

Abstract translation: 用于高动态范围图像传感器的图像传感器像素包括第一光电二极管，多个光电二极管，共享浮动扩散区，第一传输门和第二传输门。 第一光电二极管设置在半导体材料中。 第一光电二极管具有第一曝光区域和第一掺杂浓度。 多个光电二极管也设置在半导体材料中。 多个光电二极管中的每个光电二极管具有第一曝光区域和第一掺杂浓度。 第一传输栅极被耦合以将第一图像电荷从第一光电二极管传递到共享浮动扩散区域。 第二传输门被耦合以将分布图像电荷从多个光电二极管中的每个光电二极管传递到共享浮动扩散区域。