Abstract:
An anodic oxide film structure cutting method is provided. The method includes: an etching step of forming an etched groove by etching one surface of an anodic oxide film having a plurality of anodizing pores along a predetermined cutting line and forming increased-diameter pores by enlarging entrances of the anodizing pores positioned on an inner bottom surface of the etched groove; and a cutting step of cutting the anodic oxide film along the etched groove. Also provided is a unit anodic oxide film structure produced by the cutting method.
Abstract:
The present invention relates to an LED metal substrate package, and particularly, to an LED metal substrate package having a heat dissipating structure, and a method of manufacturing same. The method comprises at least the steps of: forming at least one cavity having a groove of a predetermined depth in a metal substrate that is electrically separated by at least one vertical insulation layer, the cavity having one vertical insulation layer built in a floor thereof; treating all surfaces, except portions of the top surface of the metal substrate formed in the respective cavities, with shadow masking; removing an oxide film formed on the surface portions that have not been treated with masking; depositing an electrode layer on each of the surface portions of the oxide layer that have been removed; removing the shadow mask; performing Au/Sn soldering on the electrode layer and bonding an optical device chip; and wire bonding one electrode of the optical device, disposed on one side of the metal substrate with respect to each of the vertical insulation layers, through wires to the metal substrate disposed on the other side of each of the vertical insulation layers. The present invention forms solder using Au/Sn material, which has good heat dissipating characteristics and good bonding characteristics, on the electrode layer to bond an optical device chip, so as to have excellent heat dissipating performance compared to existing LED metal packages that use Ag epoxy.
Abstract:
An anodic oxide film structure cutting method is provided. The method includes: an etching step of forming an etched groove by etching one surface of an anodic oxide film having a plurality of anodizing pores along a predetermined cutting line and forming increased-diameter pores by enlarging entrances of the anodizing pores positioned on an inner bottom surface of the etched groove; and a cutting step of cutting the anodic oxide film along the etched groove. Also provided is a unit anodic oxide film structure produced by the cutting method.
Abstract:
The present invention relates to a micro heater and a micro sensor wherein an anti-etching dam is formed on the first supporting portion, and thus, the first supporting portion maintains its initial shape thereby so that the heat capacity of the first supporting portion becomes small, and temperature uniformity thereof is enhanced.
Abstract:
A chip substrate includes conductive portions, insulation portions, cavities and a heat dissipating portion. The insulation portions are alternately bonded to the conductive portions to electrically isolate the conductive portions. The lens insertion portions are formed on an upper surface of the chip substrate at a predetermined depth so as to extend across each of the insulation portions. Each of the lens insertion portions includes a predetermined number of straight sides and a predetermined number of arc-shaped corners formed in regions where the straight sides meet with each other. The cavities are formed inward of the lens insertion portions at a predetermined depth so as to extend across each of the insulation portions. The heat dissipating portion is bonded to a lower surface of the chip substrate.
Abstract:
An optical device includes a metal substrate wherein at least one vertical insulation layer is formed from the upper to the lower surface; a metal plated layer formed on the upper surface of the metal substrate except for the vertical insulation layer; and an optical device chip bonded to one portion of the metal plated layer. One electrode of the optical device chip is electrically connected to a bonded surface of the metal plated layer, and the other electrode of the optical device chip is wire bonded to the other portion of metal plated layer. The optical device chip and a peripheral region thereof is shielded with a sealant, and at least one groove is formed on a partial surface of the metal plated layer so that a portion of the sealant is directly bonded to the metal substrate.
Abstract:
The present invention relates to a method for manufacturing an optical device and to an optical device manufactured by the method, in which heat-dissipating performance by a heat sink and thermal insulation performance between a substrate and the heat sink are improved and workability is enhanced. According to a first characteristic of the present invention, the method for manufacturing an optical device comprises: (a) a step of preparing a disk for an optical device having a vertical thermal insulation layer; (b) a step of forming a groove along a cut line formed on the lower surface of the disk for an optical device; (c) a step of applying liquid insulation material to the surface on which the groove is formed and hardening the liquid insulation material to form an electrically insulating layer having a planar surface; and (d) a step of forming a fixing hole penetrating in a vertical direction through both the disk for an optical device and the groove.
Abstract:
The present invention relates to a method of manufacturing an optical device for a back light unit, and an optical device and an optical device array manufactured by the method, in which optical device chips constituting the optical device array are each laid the sides thereof on a printed circuit board in such a manner that light can be emitted from the optical device chips in a lateral direction, thus reducing the overall thickness of the back light unit.Provided is a method of manufacturing an optical device for a back light unit, the method comprising: (a) preparing an original substrate having vertical insulating layers interposed therebetween; (b) partially cutting the original substrate to a predetermined depth from an upper surfaces thereof such that the cut portion is orthogonal at least to the vertical insulation layers, and exposing a region where a plating layer for soldering is to be formed; (c) performing plating; (d) mounting optical device chips on a plurality of chip substrate regions divided to include the vertical insulating layers; and (e) cutting each chip substrate region.
Abstract:
The present invention relates to a method of manufacturing an optical device for a back light unit, and an optical device and an optical device array manufactured by the method, in which optical device chips constituting the optical device array are each laid the sides thereof on a printed circuit board in such a manner that light can be emitted from the optical device chips in a lateral direction, thus reducing the overall thickness of the back light unit.Provided is a method of manufacturing an optical device for a back light unit, the method comprising: (a) preparing an original substrate having vertical insulating layers interposed therebetween; (b) partially cutting the original substrate to a predetermined depth from an upper surfaces thereof such that the cut portion is orthogonal at least to the vertical insulation layers, and exposing a region where a plating layer for soldering is to be formed; (c) performing plating; (d) mounting optical device chips on a plurality of chip substrate regions divided to include the vertical insulating layers; and (e) cutting each chip substrate region.
Abstract:
Proposed are a method of manufacturing a metal product that uses an anodic aluminum oxide film and a patternable material together, in which a space where the metal product is manufactured is formed by the patternable material and the anodic aluminum oxide film provides structural support to the patternable material; and a mold using an anodic aluminum oxide film used therefor.