公开(公告)号：US09634189B2

公开(公告)日：2017-04-25

申请号：US15138415

申请日：2016-04-26

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Rakesh Jain ,  Jinwei Yang ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/22 ,  H01L21/02 ,  G06F17/50 ,  H01L33/00 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32

CPC classification number: H01L33/22 ,  G06F17/5068 ,  G06F2217/12 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02617 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L2224/16225

Abstract: A patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers, is provided. The patterned surface can include a set of substantially flat top surfaces and a plurality of openings. Each substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the openings can have a characteristic size between approximately 0.1 micron and five microns. One or more of the substantially flat top surfaces can be patterned based on target radiation.

公开(公告)号：US20170104138A1

公开(公告)日：2017-04-13

申请号：US15388468

申请日：2016-12-22

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Saulius Smetona ,  Alexander Dobrinsky ,  Michael Shur ,  Mikhail Gaevski

IPC: H01L33/56 ,  H01L33/58 ,  H01L33/50 ,  H01L33/48

CPC classification number: H01L33/56 ,  B29C51/12 ,  B29L2031/3481 ,  B29L2031/747 ,  G02B3/005 ,  G02B6/4249 ,  H01L24/14 ,  H01L24/16 ,  H01L24/81 ,  H01L24/97 ,  H01L33/0095 ,  H01L33/58 ,  H01L2224/14 ,  H01L2224/1403 ,  H01L2224/16225 ,  H01L2224/81801 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0058

Abstract: A solution for packaging an optoelectronic device using an ultraviolet transparent polymer is provided. The ultraviolet transparent polymer material can be placed adjacent to the optoelectronic device and/or a device package on which the optoelectronic device is mounted. Subsequently, the ultraviolet transparent polymer material can be processed to cause the ultraviolet transparent polymer material to adhere to the optoelectronic device and/or the device package. The ultraviolet transparent polymer can be adhered in a manner that protects the optoelectronic device from the ambient environment.

公开(公告)号：US20170104132A1

公开(公告)日：2017-04-13

申请号：US15391922

申请日：2016-12-28

Applicant: Sensor Electronic Technology, Inc.

Inventor： Rakesh Jain ,  Wenhong Sun ,  Jinwei Yang ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Remigijus Gaska ,  Michael Shur

IPC: H01L33/32 ,  H01L33/12 ,  H01L33/06 ,  H01L33/00

CPC classification number: H01L33/32 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/151 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/025 ,  H01L33/04 ,  H01L33/06 ,  H01L33/12 ,  H01L33/20

Abstract: A solution for fabricating a semiconductor structure is provided. The semiconductor structure includes a plurality of semiconductor layers grown over a substrate using a set of epitaxial growth periods. During each epitaxial growth period, a first semiconductor layer having one of: a tensile stress or a compressive stress is grown followed by growth of a second semiconductor layer having the other of: the tensile stress or the compressive stress directly on the first semiconductor layer.

公开(公告)号：US20170104131A1

公开(公告)日：2017-04-13

申请号：US15390575

申请日：2016-12-26

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/22 ,  H01L33/14 ,  H01L33/62 ,  H01L33/00 ,  H01L33/32 ,  H01L33/24

CPC classification number: H01L33/22 ,  G06F17/5009 ,  G06F17/5045 ,  H01L33/007 ,  H01L33/10 ,  H01L33/20 ,  H01L33/32 ,  H01L33/62 ,  H01L2933/0083 ,  Y10T29/49

Abstract: A profiled surface for improving the propagation of radiation through an interface is provided. The profiled surface includes a set of large roughness components providing a first variation of the profiled surface having a characteristic scale approximately an order of magnitude larger than a target wavelength of the radiation. The set of large roughness components can include a series of truncated shapes. The profiled surface also includes a set of small roughness components superimposed on the set of large roughness components and providing a second variation of the profiled surface having a characteristic scale on the order of the target wavelength of the radiation.

公开(公告)号：US20170104129A1

公开(公告)日：2017-04-13

申请号：US15389479

申请日：2016-12-23

Applicant: Sensor Electronic Technology, Inc.

Inventor： Rakesh Jain ,  Wenhong Sun ,  Jinwei Yang ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/06 ,  H01L33/12 ,  H01L33/24 ,  H01L33/00 ,  H01L33/32 ,  H01L33/22

CPC classification number: H01L33/06 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L29/2003 ,  H01L29/518 ,  H01L29/7786 ,  H01L33/12 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L2933/0083 ,  H01L2933/0091

Abstract: A device having a layer with a patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers with a high concentration of aluminum, is provided. The patterned surface can include a substantially flat top surface and a plurality of stress reducing regions, such as openings. The substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the stress reducing regions can have a characteristic size between approximately 0.1 microns and approximately five microns and a depth of at least 0.2 microns. A layer of group-III nitride material can be grown on the first layer and have a thickness at least twice the characteristic size of the stress reducing regions.

公开(公告)号：US20170100496A1

公开(公告)日：2017-04-13

申请号：US15388506

申请日：2016-12-22

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Maxim S. Shatalov ,  Timothy James Bettles ,  Yuri Bilenko ,  Alexander Dobrinsky ,  Remigijus Gaska

IPC: A61L2/10 ,  A23L3/28 ,  A61L2/24 ,  F25D11/00 ,  F25D17/04

CPC classification number: A61L2/10 ,  A23L3/003 ,  A23L3/28 ,  A23V2002/00 ,  A61L2/18 ,  A61L2/24 ,  A61L2/28 ,  A61L2202/11 ,  A61L2202/14 ,  A61L2202/18 ,  A61L2202/23 ,  F25D11/00 ,  F25D17/042 ,  F25D2317/0417 ,  F25D2400/361 ,  F25D2700/06

Abstract: Ultraviolet radiation is directed within an area. The target wavelength ranges and/or target intensity ranges of the ultraviolet radiation sources can correspond to at least one of a plurality of selectable operating configurations including a sterilization operating configuration and a preservation operating configuration.

公开(公告)号：US09595634B2

公开(公告)日：2017-03-14

申请号：US15200313

申请日：2016-07-01

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Remigijus Gaska ,  Jinwei Yang

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/32 ,  H01L33/22 ,  H01S5/343 ,  H01L33/10 ,  H01S5/125 ,  H01S5/30 ,  B82Y10/00 ,  H01L21/02 ,  H01L29/15 ,  H01L29/778 ,  H01L29/20

CPC classification number: H01L33/06 ,  B82Y10/00 ,  B82Y20/00 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/15 ,  H01L29/2003 ,  H01L29/778 ,  H01L33/0025 ,  H01L33/10 ,  H01L33/22 ,  H01L33/32 ,  H01L33/325 ,  H01L33/405 ,  H01S5/125 ,  H01S5/3054 ,  H01S5/3063 ,  H01S5/343 ,  H01S5/34333 ,  H01S5/34346

Abstract: A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. In this case, the barriers can include both transparent regions, which are configured to reduce an amount of radiation that is absorbed in the layer, and higher conductive regions, which are configured to keep the voltage drop across the layer within a desired range.

Abstract translation: 提供了一种包括一个或多个具有横向区域的层，该层被配置为有助于辐射通过该层的传输和被配置为促进流过该层的电流的横向区域。 该层可以包括短期超晶格，其包括与井交替的障碍物。 在这种情况下，障碍物可以包括被配置为减少在层中吸收的辐射量的透明区域以及被配置为将跨越层的电压降保持在期望范围内的较高导电区域。

公开(公告)号：US09537054B2

公开(公告)日：2017-01-03

申请号：US14686845

申请日：2015-04-15

Applicant: Sensor Electronic Technology, Inc.

Inventor： Daniel D. Billingsley ,  Robert M. Kennedy ,  Wenhong Sun ,  Rakesh Jain ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/06 ,  H01L33/32 ,  H01L33/00 ,  H01L21/02 ,  H01L33/20 ,  H01L33/24 ,  H01L29/15 ,  H01L29/20

CPC classification number: H01L33/12 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/155 ,  H01L29/2003 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32 ,  H01L2224/16225

Abstract: A heterostructure for use in fabricating an optoelectronic device is provided. The heterostructure includes a layer, such as an n-type contact or cladding layer, that includes thin sub-layers inserted therein. The thin sub-layers can be spaced throughout the layer and separated by intervening sub-layers fabricated of the material for the layer. The thin sub-layers can have a distinct composition from the intervening sub-layers, which alters stresses present during growth of the heterostructure.

Abstract translation: 提供了用于制造光电子器件的异质结构。 异质结构包括诸如n型接触或包覆层的层，其包括插入其中的薄子层。 薄的子层可以遍及整个层间隔开，并由用于该层的材料制成的中间子层隔开。 薄的子层可以具有与插入的子层不同的组成，其在异质结构的生长期间改变应力存在。

公开(公告)号：US20160343901A1

公开(公告)日：2016-11-24

申请号：US15225382

申请日：2016-08-01

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Rakesh Jain ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Jinwei Yang ,  Remigijus Gaska ,  Mikhail Gaevski

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/62

CPC classification number: H01L33/06 ,  H01L33/007 ,  H01L33/18 ,  H01L33/30 ,  H01L33/382 ,  H01L2224/14 ,  H01S5/0224 ,  H01S5/3209 ,  H01S5/3413 ,  H01S5/34333

Abstract: A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.

Abstract translation: 提供了包括包括多个组成不均匀区域的半导体层的器件。 多个组成不均匀区域的平均带隙与半导体层的剩余部分的平均带隙之间的差可以是至少热能。 此外，多个组成不均匀区域的特征尺寸可以小于半导体层的位错密度的倒数。

公开(公告)号：US09502509B2

公开(公告)日：2016-11-22

申请号：US15083423

申请日：2016-03-29

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Jinwei Yang ,  Wenhong Sun ,  Rakesh Jain ,  Michael Shur ,  Remigijus Gaska

IPC: H01L31/00 ,  H01L29/15 ,  H01L29/205 ,  H01L29/20 ,  H01L29/06

CPC classification number: H01L29/158 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/205 ,  H01L33/007 ,  H01L33/12

Abstract: A semiconductor structure, such as a group III nitride-based semiconductor structure is provided. The semiconductor structure includes a cavity containing semiconductor layer. The cavity containing semiconductor layer can have a thickness greater than two monolayers and a multiple cavities. The cavities can have a characteristic size of at least one nanometer and a characteristic separation of at least five nanometers.

Abstract translation: 提供了诸如III族氮化物基半导体结构的半导体结构。 半导体结构包括含有半导体层的空腔。 含腔的半导体层可以具有大于两个单层和多个空腔的厚度。 空腔可以具有至少一纳米的特征尺寸和至少五纳米的特征分离。