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    Differential pressure HIP forging in a controlled gaseous environment
    81.
    发明授权
    Differential pressure HIP forging in a controlled gaseous environment 失效
    在受控气体环境下的差压HIP锻造

    公开(公告)号：US5997273A

    公开(公告)日：1999-12-07

    申请号：US521389

    申请日：1995-08-01

    Applicant: Henry Louis Laquer

    Inventor： Henry Louis Laquer

    IPC: B01J3/06 ,  B22F3/03 ,  B22F3/12 ,  B22F3/15 ,  B28B3/00 ,  B28B3/02 ,  B30B11/00 ,  C04B35/645 ,  B28B11/00

    CPC classification number: B01J3/06 ,  B22F3/03 ,  B22F3/1208 ,  B22F3/15 ,  B28B3/003 ,  B28B3/006 ,  B28B3/025 ,  B30B11/001 ,  C04B35/6455

    Abstract: Apparatus and procedures are presented for forging, or hot working bulk ceramics, including high temperature superconductors and other sensitive materials, under precisely controlled conditions of pressure, temperature, atmospheric composition, and strain rate. A capsule with massive end plates and an independent gas supply is located in a modified hot isostatic press (HIP). Essentially uniaxial deformation of a pre-compacted disc with forces of up to 500,000 Newtons (50 tons) and at temperatures of up to 1000 C. can be achieved. The separate gas supply to the capsule can maintain a specified gaseous atmosphere around the disc, up to the operating pressure of the HIP. The apparatus is designed to tolerate partial oxygen pressures of up to 20%.

    Abstract translation: 在压力，温度，大气成分和应变率的精确控制条件下，提供锻造或热加工散装陶瓷（包括高温超导体和其他敏感材料）的设备和程序。 具有大量端板和独立气体供应的胶囊位于改进的热等静压机（HIP）中。 可以实现具有高达500,000牛顿（50吨）和高达1000℃的温度的预压实盘的基本单轴变形。 到胶囊的单独的气体供应可以在盘周围保持特定的气体气氛，直到HIP的操作压力。 该设备被设计为容忍高达20％的部分氧气压力。

    Isotopically pure single crystal epitaxial diamond films and their preparation
    83.
    发明授权
    Isotopically pure single crystal epitaxial diamond films and their preparation 失效
    同位素纯单晶外延金刚石薄膜及其制备方法

    公开(公告)号：US5360479A

    公开(公告)日：1994-11-01

    申请号：US547651

    申请日：1990-07-02

    Applicant: William F. Banholzer ,  Thomas R. Anthony ,  Dennis M. Williams

    Inventor： William F. Banholzer ,  Thomas R. Anthony ,  Dennis M. Williams

    IPC: B01J3/06 ,  C23C16/27 ,  C30B25/02 ,  C30B25/10 ,  C30B29/04

    CPC classification number: C30B25/02 ,  B01J3/06 ,  C23C16/27 ,  C30B25/105 ,  C30B29/04 ,  B01J2203/0655

    Abstract: The present invention is directed to the production of single-crystal diamond consisting of isotopically pure carbon-12 or carbon-13. The product is believed to be like that diamond product in application Ser. No. 448,469, but is made by a different method. In the present invention, isotopically pure single-crystal diamond is grown on a single crystal substrate directly from isotopically pure carbon-12 or carbon-13. One method for forming isotopically pure single-crystal diamond comprises the steps of placing in a reaction chamber a single crystal substrate heated to an elevated CVD diamond-forming temperature. A gaseous mixture of hydrogen and a hydrocarbon of isotopically pure carbon-12 or carbon-13 is provided in the chamber. The gaseous mixture then is at least partially decomposed in the chamber to form an isotopically-pure single crystal diamond layer on the single crystal substrate disposed therein. The thus-formed isotopically-pure single crystal diamond layer optionally may be removed from the single crystal substrate. Another method for forming isotopically-pure single-crystal diamond comprises diffusing isotopically-pure carbon-12 or carbon-13 through a metallic catalyst/solvent under high pressure to a region containing a single crystal substrate to form an isotopically-pure single-crystal diamond layer on said single crystal substrate. The single crystal substrate is stable under the high pressure and elevated temperatures used during the diffusion process. The single crystal substrates optionally may be diamond, including the isotopically-pure single-crystal diamond films formed by the inventive method disclosed herein, thus forming multi-layered diamond structures.

    Abstract translation: 本发明涉及由同位素纯碳-12或碳-13组成的单晶金刚石的制备。 该产品被认为是应用Ser中的那种钻石产品。 No. 448,469，但是由不同的方法制成。 在本发明中，同位素纯的单晶金刚石直接从同位素纯碳-12或碳-13生长在单晶基底上。 用于形成同位素纯的单晶金刚石的一种方法包括以下步骤：将加热到升高的CVD金刚石形成温度的单晶衬底置于反应室中。 在室中提供氢气和同位素纯碳-12或碳-13烃的气体混合物。 气体混合物然后在腔室中至少部分分解，以在设置在其中的单晶衬底上形成同位素纯的单晶金刚石层。 如此形成的同位素纯的单晶金刚石层任选地可以从单晶衬底去除。 用于形成同位素纯的单晶金刚石的另一种方法包括将同位素纯的碳-12或碳-13通过金属催化剂/溶剂在高压下扩散到含有单晶底物的区域，以形成同位素纯的单晶金刚石 在所述单晶衬底上。 单晶基板在扩散过程中使用的高压和高温下是稳定的。 单晶衬底任选地可以是金刚石，包括通过本文公开的本发明方法形成的同位素纯的单晶金刚石膜，从而形成多层金刚石结构。

    Apparatus and method for the rapid attainment of high hydrostatic pressures and concurrent delivery to a workpiece
    84.
    发明授权
    Apparatus and method for the rapid attainment of high hydrostatic pressures and concurrent delivery to a workpiece 失效
    用于快速获得高静水压力并且同时输送到工件的装置和方法

    公开(公告)号：US4942750A

    公开(公告)日：1990-07-24

    申请号：US338222

    申请日：1989-01-23

    Applicant: Robert M. Conaway

    Inventor： Robert M. Conaway

    IPC: B01J3/06

    CPC classification number: B01J3/06 ,  Y10T29/49805

    Abstract: Apparatus and methods are disclosed for the rapid generation of high hydrostatic pressures and the concurrent delivery of said pressures to a workpiece. The apparatus and methods comprise the rapid thermal expansion and vaporization of a volatile fluid. The volatile fluid is typically liquid argon and heated typically by means of a controllable electric heater, delivered to the workpiece typically by means of a pressure-rupturable membrane. The disclosed apparatus and methods permit the application of high hydrostatic pressures to commercial-scale workpieces, in an economic manner and with reduced cycle times.

    Abstract translation: 公开了用于快速产生高静水压力和将所述压力同时传送到工件的装置和方法。 该装置和方法包括挥发性流体的快速热膨胀和蒸发。 挥发性流体通常是液态氩气，通常通过可控制的电加热器加热，通常通过压力破裂膜输送到工件。 所公开的装置和方法允许以经济的方式和减少的循环时间对商业尺寸的工件施加高静水压力。

    High pressure apparatus
    85.
    发明授权
    High pressure apparatus 失效
    高压设备

    公开(公告)号：US4582212A

    公开(公告)日：1986-04-15

    申请号：US578081

    申请日：1984-02-08

    Applicant: Akira Asari

    Inventor： Akira Asari

    IPC: F16J12/00 ,  B01J3/04 ,  B01J3/06 ,  B65D25/20

    CPC classification number: B30B15/042 ,  B01J3/048 ,  B01J3/06 ,  B30B11/002

    Abstract: A high pressure apparatus including a container internally provided with a cylindrical space capable of being closed, which container is constituted by a unitary member or an integral assembly of a plurality of members joined throughout its full axial length; a cotter member or a pin inserted radially in the container at one or both axial end portions of the container, which cotter member or pin serves as a structure for bearing an axial force induced by a high pressure load; and a plurality of flexible members wound round the outer periphery of the container axially of the latter to thereby exert a precompression on the entirety of the container.

    Abstract translation: 一种高压装置，包括内部设置有能够关闭的圆筒形空间的容器，该容器由整体构件或在整个轴向长度上连接的多个构件的整体组件构成; 在容器的一个或两个轴向端部处径向插入容器中的开口部件或销，该开口部件或销用作用于承受由高压负荷引起的轴向力的结构; 以及多个柔性构件，其围绕容器的外周边卷绕在容器的外周上，从而在整个容器上施加预压缩。

    High temperature high pressure apparatus
    86.
    发明授权
    High temperature high pressure apparatus 失效
    高温高压装置

    公开(公告)号：US4518334A

    公开(公告)日：1985-05-21

    申请号：US644362

    申请日：1984-08-27

    Applicant: Hiroshi Ishizuka

    Inventor： Hiroshi Ishizuka

    IPC: B01J3/06

    CPC classification number: B01J3/06 ,  B01J3/065 ,  Y10S425/026

    Abstract: A high temperature high pressure apparatus which comprises: an annular die having a straight cylindrical bore and a substantially conical face in adjacency outwards with each end thereof, a pair of tapered punches which are in opposed and axial alignment with the die so that a conical face of each punch is substantially in parallel with that of the die, a pair of inner gaskets, each of which is made of fired refractory and is arranged in direct abutment on the conical face of the punch and the bore of the die, a pair of outer gaskets, which are made of material of intermediate hardness level and is arranged in adjacency outside the inner gasket, and a pair of stopper rings of readily deformable but highly tough material and arranged in adjacency outwards to the outer gaskets.

    Abstract translation: 一种高温高压装置，包括：环形模具，其具有直的圆柱形孔和与其每端相邻的基本上圆锥形的表面，一对与模具相对且轴向对准的锥形冲头，使得圆锥形面 每个冲头基本上与模具平行，一对内垫圈，每个内垫圈由耐火材料制成，并且直接邻接在冲头的锥形表面和模具的孔上，一对 外部垫圈由中间硬度水平的材料制成，并且在内部垫圈外侧相邻地布置，以及一对容易变形但非常坚韧的材料的止动环，并且邻近地布置在外部垫圈上。

    Method and apparatus for hot pressing
    88.
    发明授权
    Method and apparatus for hot pressing 失效
    用于热压的方法和装置

    公开(公告)号：US3567896A

    公开(公告)日：1971-03-02

    申请号：US3567896D

    申请日：1969-09-25

    Applicant: ATOMIC ENERGY COMMISSION

    Inventor： CHANG JI YOUNG

    IPC: B01J3/06 ,  B30B1/00 ,  H05B1/00

    CPC classification number: B01J3/06 ,  B30B1/005

    Abstract: A method and apparatus for generating pressures wherein a highly anisotropic pyrolytic graphite body having its highest coefficient of linear thermal expansion in the direction of an axis thereof is confined in a pressing vessel together with a compactible material which is positioned along said axis. Heating of the anisotropic body expands the same along said axis to compress the compactible material. The pressing vessel is composed of a material having a low coefficient of thermal expansion relative to the anisotropic body. Preferably, the pressing vessel is composed of isotropic graphite, so that high pressures can be generated by furnacing the entire assembly at temperatures as high as 2200* C.

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