公开(公告)号：US06548841B2

公开(公告)日：2003-04-15

申请号：US10165024

申请日：2002-06-07

Applicant: Gary A. Frazier ,  Alan C. Seabaugh

Inventor： Gary A. Frazier ,  Alan C. Seabaugh

IPC: H01L2968

CPC classification number: G11C23/00 ,  H01H1/0094 ,  Y10S977/70 ,  Y10S977/708 ,  Y10S977/709

Abstract: A highly miniaturized nanomechanical transistor switch is fabricated using a mechanical cantilever which creates a conductive path between two electrodes in its deflected state. In one embodiment, the cantilever is deflected by an electrostatic attraction arising from a voltage potential between the cantilever and a control electrode. In another embodiment, the cantilever is formed of a material with high magnetic permeability, and is deflected in response to complementary magnetic fields induced in the cantilever and in an adjacent electrode. The nanomechanical switch can be fabricated using well known semiconductor fabrication techniques, although semiconductor materials are not necessary for fabrication. The switch can rely upon physical contact between the cantilever and the adjacent electrode for current flow, or can rely upon sufficient proximity between the cantilever and the adjacent electrode to allow for tunneling current flow.

公开(公告)号：US5767526A

公开(公告)日：1998-06-16

申请号：US782014

申请日：1997-01-07

Applicant: Alan C. Seabaugh

Inventor： Alan C. Seabaugh

IPC: H03B19/14 ,  H01L29/06 ,  H01L31/0336 ,  H01L31/0238

CPC classification number: B82Y10/00 ,  H03B19/14

Abstract: A solid-state frequency multiplier circuit (10) is provided which includes a bipolar quantum-well resonant tunneling transistor (12), a resistive load (14), and an A.C. output coupling capacitor (16), all which may be formed in a single integrated circuit or as discrete components. The value of the resistive load (14) determines the frequency multiplication factor of the circuit (10), and can produce frequencies in a range from about 2 GHz to over 20 GHz. A different embodiment of the present invention provides a frequency multiplication circuit (20) which generates a sinusoidal output waveform, without using an output A.C. coupling capacitor.

Abstract translation: 提供一种固态倍频电路（10），其包括双极量子阱谐振隧道晶体管（12），电阻负载（14）和交流输出耦合电容器（16），所有这些都可以形成在 单个集成电路或作为分立组件。 电阻负载（14）的值确定电路（10）的倍频因子，并且可以产生从约2GHz到超过20GHz的频率。 本发明的另一个实施例提供了一种产生正弦输出波形的倍频电路（20），而不使用输出交流耦合电容器。

公开(公告)号：US20120032227A1

公开(公告)日：2012-02-09

申请号：US13206187

申请日：2011-08-09

Applicant: Alan C. SEABAUGH ,  Patrick FAY ,  Huili (Grace) XING ,  Guangle ZHOU ,  Yeqing LU ,  Mark A. WISTEY ,  Siyuranga KOSWATTA

Inventor： Alan C. SEABAUGH ,  Patrick FAY ,  Huili (Grace) XING ,  Guangle ZHOU ,  Yeqing LU ,  Mark A. WISTEY ,  Siyuranga KOSWATTA

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/7391

Abstract: A low voltage tunnel field effect transistor includes a p-n tunnel junction, a gate-dielectric, a gate, a source-contact, and a drain-contact. The p-n tunnel junction includes a depletion region interfacing together a source-layer and a drain-layer. The depletion region includes a source-tunneling-region of the source-layer and a drain-tunneling-region of the drain-layer. When no external electric field is imposed, the depletion region of the p-n tunnel junction has an internal electric field that substantially points towards the source-tunneling-region and the drain-tunneling-region. The gate-dielectric is interfaced directly onto the drain-tunneling-region such that the drain-tunneling-region is between the source-tunneling-region and the gate-dielectric. The gate is interfaced onto the gate-dielectric such that the gate is configured to impose an external electric field which is oriented substantially in parallel to the internal electric field of the depletion region.

Abstract translation: 低电压隧道场效应晶体管包括p-n隧道结，栅极 - 电介质，栅极，源极 - 接触和漏极 - 接触。 p-n隧道结包括将源极层和漏极层接合在一起的耗尽区域。 耗尽区包括源极层的源极 - 沟道区域和漏极 - 层的漏极 - 隧穿区域。 当不施加外部电场时，p-n隧道结的耗尽区具有基本上指向源极 - 隧穿区域和漏极 - 隧穿区域的内部电场。 栅极电介质直接连接到漏极 - 隧穿区域上，使得漏极 - 隧穿区域在源极 - 隧穿区域和栅极 - 电介质之间。 栅极连接到栅极 - 电介质上，使得栅极被配置为施加大致平行于耗尽区的内部电场定向的外部电场。

公开(公告)号：US06534839B1

公开(公告)日：2003-03-18

申请号：US09711001

申请日：2000-11-09

Applicant: Gary A. Frazier ,  Alan C. Seabaugh

Inventor： Gary A. Frazier ,  Alan C. Seabaugh

IPC: H01L2996

CPC classification number: G11C23/00 ,  B82Y10/00 ,  B82Y30/00 ,  H01H1/0094 ,  Y10S977/708

Abstract: A highly miniaturized nanomechanical transistor switch is fabricated using a mechanical cantilever which creates a conductive path between two electrodes in its deflected state. In one embodiment, the cantilever is deflected by an electrostatic attraction arising from a voltage potential between the cantilever and a control electrode. In another embodiment, the cantilever is formed of a material with high magnetic permeability, and is deflected in response to complementary magnetic fields induced in the cantilever and in an adjacent electrode. The nanomechanical switch can be fabricated using well known semiconductor fabrication techniques, although semiconductor materials are not necessary for fabrication. The switch can rely upon physical contact between the cantilever and the adjacent electrode for current flow, or can rely upon sufficient proximity between the cantilever and the adjacent electrode to allow for tunneling current flow.

公开(公告)号：US6139483A

公开(公告)日：2000-10-31

申请号：US97526

申请日：1993-07-27

Applicant: Alan C. Seabaugh ,  Yung Chung Kao ,  Andrew J. Purdes ,  John N. Randall

Inventor： Alan C. Seabaugh ,  Yung Chung Kao ,  Andrew J. Purdes ,  John N. Randall

IPC: H01L21/334 ,  H01L29/772 ,  H01L21/20

CPC classification number: B82Y30/00 ,  B82Y10/00 ,  H01L29/66939 ,  H01L29/772 ,  Y10S438/962

Abstract: A method of fabricating a quantum well device is presented which includes forming one or more quantum wells 48 by forming an epitaxy mask followed by selective deposition of one or more epitaxial layers. Selective deposition is accomplished by forming an epitaxy mask by sidewall defined masking, followed by epitaxial deposition of one or more layers (e.g. barrier layers 40 and 44 and a quantum layer 42) The epitaxy mask is formed by patterning an e-beam resist layer (e.g. polymethylmethacrylate 36), conformally depositing a glass layer (e.g. SiO.sub.2 38) on the resist, anisotropically etching the SiO.sub.2, and then removing the e-beam resist layer. The epitaxy mask fabrication technique allows patterning to define geometries that are much smaller than the beam itself and thereby provides the means required to define nanometer dimensioned horizontal (lateral) structures on and within epitaxial layers.

Abstract translation: 提出了一种制造量子阱器件的方法，其包括通过形成外延掩模形成一个或多个量子阱48，随后选择性沉积一个或多个外延层。 选择性沉积是通过用侧壁确定的掩模形成外延掩模，然后通过外延沉积一层或多层（例如阻挡层40和44和量子层42）来实现的。外延掩模是通过图案化电子束抗蚀剂层 例如聚甲基丙烯酸甲酯36），在抗蚀剂上保形地沉积玻璃层（例如SiO 2 38），各向异性地蚀刻SiO 2，然后除去电子束抗蚀剂层。 外延掩模制造技术允许图案化以限定比束本身小得多的几何形状，从而提供在外延层上和外延层中限定纳米尺寸的水平（横向）结构所需的手段。

公开(公告)号：US5554860A

公开(公告)日：1996-09-10

申请号：US425664

申请日：1995-04-17

Applicant: Alan C. Seabaugh

Inventor： Alan C. Seabaugh

IPC: H01L29/737 ,  H01L29/06 ,  H01L29/00 ,  H01L31/0328

CPC classification number: B82Y30/00 ,  B82Y10/00 ,  H01L29/7376

Abstract: This is a method of generating noise comprising the step of switching a plurality of resonant tunneling diodes each located in the emitter or base of a multi finger transistor such that each of the resonant tunneling diodes switches at a different input voltage. Other devices and methods are also disclosed.

Abstract translation: 这是产生噪声的方法，包括切换多个谐振隧道二极管的步骤，每个谐振隧穿二极管位于多指晶体管的发射极或基极中，使得每个谐振隧道二极管以不同的输入电压切换。 还公开了其它装置和方法。

公开(公告)号：US5408106A

公开(公告)日：1995-04-18

申请号：US236866

申请日：1994-05-02

Applicant: Alan C. Seabaugh

Inventor： Alan C. Seabaugh

IPC: H01L29/205 ,  H01L21/331 ,  H01L21/334 ,  H01L21/338 ,  H01L29/06 ,  H01L29/68 ,  H01L29/772 ,  H01L29/778 ,  H01L29/80 ,  H01L29/812 ,  H01L21/265 ,  H01L29/72

CPC classification number: B82Y10/00 ,  H01L29/6625 ,  H01L29/66939 ,  H01L29/772 ,  H01L29/7783

Abstract: A lateral resonant tunneling transistor is provided comprising heterojunction barriers (24) and a quantized region (33). Current between source contact (26) and drain contact (28) can be switched "ON" or "OFF" by placing an appropriate voltage on gate contacts (30) and (32). The potential on gate contacts (30) and (32) selectively modulate the quantum states within quantized region (33) so as to allow electrons to tunnel through heterojunction barrier (24) and quantized region (33).

Abstract translation: 提供了包括异质结屏障（24）和量化区域（33）的横向谐振隧穿晶体管。 通过在栅极触点（30）和（32）上放置适当的电压，可以将源触点（26）和漏极触点（28）之间的电流切换为“ON”或“OFF”。 栅极触点（30）和（32）上的电势选择性地调制量化区域（33）内的量子态，以允许电子穿过异质结势垒（24）和量化区域（33）。

公开(公告)号：US4373989A

公开(公告)日：1983-02-15

申请号：US325933

申请日：1981-11-30

Applicant: James M. Administrator of the National Aeronautics and Space Administration, with respect to an invention of Beggs ,  Robert J. Mattauch ,  Alan C. Seabaugh

Inventor： James M. Administrator of the National Aeronautics and Space Administration, with respect to an invention of Beggs ,  Robert J. Mattauch ,  Alan C. Seabaugh

IPC: C30B19/12 ,  H01L21/306

CPC classification number: C30B19/12 ,  Y10S438/955

Abstract: A controlled in situ etch-back technique is disclosed in which an etch melt 17 and a growth melt 18 are first saturated by a source-seed crystal 15 and thereafter etch-back of a substrate 14 takes place by the slightly undersaturated etch melt, followed by LPE growth of a layer by the growth melt, which is slightly supersaturated.

Abstract translation: 公开了一种受控的原位蚀刻技术，其中蚀刻熔体17和生长熔体18首先被源 - 籽晶15饱和，然后通过稍微不足饱和的蚀刻熔体进行衬底14的回蚀，随后 通过生长熔融物的LPE生长，其稍微过饱和。

公开(公告)号：US5512764A

公开(公告)日：1996-04-30

申请号：US368251

申请日：1995-01-03

Applicant: Alan C. Seabaugh ,  Chad H. Mikkelson ,  Gary Frazier

Inventor： Alan C. Seabaugh ,  Chad H. Mikkelson ,  Gary Frazier

IPC: G11C11/56 ,  H01L29/76 ,  H01L29/06 ,  H01L31/0328

CPC classification number: B82Y10/00 ,  G11C11/56 ,  H01L29/7606 ,  G11C2211/5614

Abstract: This is a vertical field-effect resonant tunneling transistor device comprising: a semi-conducting substrate 46; a drain region 48 above the semi-conducting substrate; a multiple-barrier multi-well resonant tunneling diode 52, 54, 56, 58, 60 above the drain layer; a two dimensional electron gas heterostructure 64 above the multiple-barrier multi-well resonant tunneling diode; a source region 72 extending through the two dimensional electron gas and above the multiple-barrier multi-well resonant tunneling diode; ohmic contacts 70 on the source region, wherein the source region provides an ohmic connection to the two dimensional electron gas; and gate s! 68, 74 besides the source region.

Abstract translation: 这是一种垂直场效应谐振隧道晶体管器件，包括：半导体衬底46; 在半导体衬底上方的漏极区域48; 在漏极层上方的多阻挡多阱谐振隧道二极管52,54,56,58,60; 在多阻挡多阱谐振隧道二极管上方的二维电子气异质结构64; 源极区域72，延伸穿过二维电子气体并位于多阻挡多阱谐振隧穿二极管的上方; 源极区上的欧姆接触70，其中源极区提供与二维电子气的欧姆连接; 和栅极68,74。

公开(公告)号：US06495905B2

公开(公告)日：2002-12-17

申请号：US10165698

申请日：2002-06-07

Applicant: Gary A. Frazier ,  Alan C. Seabaugh

Inventor： Gary A. Frazier ,  Alan C. Seabaugh

IPC: H01L2970

CPC classification number: G11C23/00 ,  H01H1/0094 ,  Y10S977/70 ,  Y10S977/708 ,  Y10S977/709

Abstract: A highly miniaturized nanomechanical transistor switch is fabricated using a mechanical cantilever which creates a conductive path between two electrodes in its deflected state. In one embodiment, the cantilever is deflected by an electrostatic attraction arising from a voltage potential between the cantilever and a control electrode. In another embodiment, the cantilever is formed of a material with high magnetic permeability, and is deflected in response to complementary magnetic fields induced in the cantilever and in an adjacent electrode. The nanomechanical switch can be fabricated using well known semiconductor fabrication techniques, although semiconductor materials are not necessary for fabrication. The switch can rely upon physical contact between the cantilever and the adjacent electrode for current flow, or can rely upon sufficient proximity between the cantilever and the adjacent electrode to allow for tunneling current flow.