公开(公告)号：US08074345B1

公开(公告)日：2011-12-13

申请号：US12468006

申请日：2009-05-18

Applicant: Alexandre Anguelouch ,  Donghong Li

Inventor： Alexandre Anguelouch ,  Donghong Li

IPC: G11B5/127 ,  H04R31/00

CPC classification number: G11B5/3163 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/455 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

Abstract: A method of measuring a bevel angle in a write pole comprises the step of providing a mask over a wafer containing the write pole. The mask has a first opening over the write pole and a second opening over a sacrificial region of the wafer. The sacrificial region comprises a same material as the write pole. The method further comprises the steps of performing a beveling operation on the write pole and the sacrificial region to form a first bevel in the write pole and a second bevel in the sacrificial region, and measuring an angle of the second bevel in the sacrificial region to determine the bevel angle of the write pole.

Abstract translation: 测量写入极的斜角的方法包括在包含写入极的晶片上提供掩模的步骤。 掩模具有位于写入极上的第一开口和在晶片的牺牲区上方的第二开口。 牺牲区域包括与写入极相同的材料。 该方法还包括以下步骤：在写入极和牺牲区域上执行斜面操作以在写入极中形成第一斜面，在牺牲区域中形成第二斜面，并且将牺牲区域中的第二斜面的角度测量为 确定写柱的斜角。

公开(公告)号：US08097846B1

公开(公告)日：2012-01-17

申请号：US12392887

申请日：2009-02-25

Applicant: Alexandre Anguelouch ,  Lei Wang ,  Chester Xiaowen Chien

Inventor： Alexandre Anguelouch ,  Lei Wang ,  Chester Xiaowen Chien

IPC: G01N23/00 ,  H01J37/252 ,  H01J37/30

CPC classification number: G11B5/3166 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/3173 ,  H01J2237/24578 ,  H01J2237/24592 ,  H01J2237/2817 ,  H01J2237/3174 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for measuring three-dimensional devices in a wafer comprises the step of obtaining a plurality of cross-sectional images of a corresponding plurality of three-dimensional devices in the wafer. The plurality of three-dimensional devices have essentially identical geometries. Each cross-sectional image is obtained from a plane in the corresponding three-dimensional device at a predetermined distance from a fiducial mark thereof. The predetermined distance is different for each of the plurality of cross-sectional images. The method further comprises the step of determining the geometries of the plurality of three-dimensional devices based on the cross-sectional images thereof.

Abstract translation: 用于测量晶片中的三维器件的方法包括获得晶片中相应的多个三维器件的多个横截面图像的步骤。 多个三维装置具有基本相同的几何形状。 每个横截面图像从相对应的三维装置的与其基准标记预定距离处的平面获得。 对于多个横截面图像中的每一个，预定距离是不同的。 该方法还包括基于其横截面图像来确定多个三维装置的几何形状的步骤。