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公开(公告)号：US08228007B2
公开(公告)日：2012-07-24
申请号：US12646981
申请日：2009-12-24
Applicant: Chung-Chun Huang , Tsun-Hsu Chang , Bo-Hung Lin , Chi-Wen Hu
Inventor： Chung-Chun Huang , Tsun-Hsu Chang , Bo-Hung Lin , Chi-Wen Hu
IPC: H01J25/00
Abstract: The invention discloses a microwave supplying apparatus including a microwave generator, a first power divider, a second power divider, a first waveguide, and a second wave guide. The first waveguide is connected to the microwave generator and has a first output terminal and a second output terminal to divide a microwave generated by the microwave generator along a first direction. The second power divider is connected to the first output terminal and has a third output terminal and a fourth output terminal to divide the microwave along a second direction. The first waveguide and the second waveguide are connected to the third output terminal and the fourth terminal respectively and receive the microwave through the first power divider and the second power divider to respectively output the microwave fields with approximate intensity distributions.
Abstract translation: 本发明公开了一种微波提供装置，包括微波发生器，第一功率分配器，第二功率分配器，第一波导和第二波导。 第一波导连接到微波发生器，并且具有第一输出端和第二输出端，以沿着第一方向分隔由微波发生器产生的微波。 第二功率分配器连接到第一输出端子，并且具有第三输出端子和第四输出端子，以沿着第二方向分隔微波。 第一波导和第二波导分别连接到第三输出端和第四端，并通过第一功率分配器和第二功率分配器接收微波，以分别输出具有近似强度分布的微波场。
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公开(公告)号：US08926806B2
公开(公告)日：2015-01-06
申请号：US13355770
申请日：2012-01-23
Applicant: Ming-Chin Tsai , Bo-Hung Lin , You-Hua Chou , Chung-En Kao
Inventor： Ming-Chin Tsai , Bo-Hung Lin , You-Hua Chou , Chung-En Kao
CPC classification number: H01L21/324 , C23C14/50 , C23C14/541 , C23C14/5806 , H01L21/67115 , H01L21/76838
Abstract: The present disclosure is directed to a physical vapor deposition system configured to heat a semiconductor substrate or wafer. In some embodiments the disclosed physical vapor deposition system comprises at least one heat source having one or more lamp modules for heating of the substrate. The lamp modules may be separated from the substrate by a shielding device. In some embodiments, the shielding device comprises a one-piece device or a two piece device. The disclosed physical vapor deposition system can heat the semiconductor substrate, reflowing a metal film deposited thereon without the necessity for separate chambers, thereby decreasing process time, requiring less thermal budget, and decreasing substrate damage.
Abstract translation: 本公开涉及被配置为加热半导体衬底或晶片的物理气相沉积系统。 在一些实施例中，所公开的物理气相沉积系统包括至少一个热源，其具有用于加热基底的一个或多个灯模块。 灯模块可以通过屏蔽装置与衬底分离。 在一些实施例中，屏蔽装置包括一件式装置或两件式装置。 所公开的物理气相沉积系统可以加热半导体衬底，回流沉积在其上的金属膜，而不需要单独的室，从而减少处理时间，需要较少的热量预算和减少衬底损伤。
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公开(公告)号：US08884526B2
公开(公告)日：2014-11-11
申请号：US13354604
申请日：2012-01-20
Applicant: Bo-Hung Lin , Ming-Chih Tsai , Chia-Ho Chen , Chung-En Kao
Inventor： Bo-Hung Lin , Ming-Chih Tsai , Chia-Ho Chen , Chung-En Kao
IPC: H01J7/24
CPC classification number: H01J37/32669
Abstract: In some embodiments, the present disclosure relates to a plasma processing system that generates a magnetic field having a maximum strength that is independent of workpiece size. The plasma processing system has a plurality of side electromagnets that have a size which is independent of the workpiece size. The side electromagnets are located around a perimeter of a processing chamber configured to house a semiconductor workpiece. When a current is provided to the side electromagnets, separate magnetic fields emanate from separate positions around the workpiece. The separate magnetic fields contribute to the formation of an overall magnetic field that controls the distribution of plasma within the processing chamber. Because the size of the plurality of separate side magnets is independent of the workpiece size, the plurality of side magnets can generate a magnetic field having a maximum field strength that is independent of workpiece size.
Abstract translation: 在一些实施例中，本公开涉及一种产生具有与工件尺寸无关的最大强度的磁场的等离子体处理系统。 等离子体处理系统具有多个侧面电磁体，其尺寸独立于工件尺寸。 侧面电磁体位于被配置为容纳半导体工件的处理室的周边周围。 当向侧面电磁铁提供电流时，分离的磁场从工件周围的分离位置发出。 单独的磁场有助于形成控制处理室内等离子体分布的整个磁场。 由于多个分离侧磁体的尺寸与工件尺寸无关，所以多个侧磁体可产生具有独立于工件尺寸的最大磁场强度的磁场。
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公开(公告)号：US20130213797A1
公开(公告)日：2013-08-22
申请号：US13397957
申请日：2012-02-16
Applicant: Bo-Hung Lin , Ming-Chih Tsai , You-Hua Chou , Chung-En Kao
Inventor： Bo-Hung Lin , Ming-Chih Tsai , You-Hua Chou , Chung-En Kao
IPC: C23C14/35
CPC classification number: C23C14/351 , C23C14/35 , H01J37/32669 , H01J37/3408 , H01J37/3452 , H01J37/3455 , H01J37/3461
Abstract: In some embodiments, the present disclosure relates to a plasma processing system comprising a magnetron configured to provide a symmetric magnetic track through a combination of vibrational and rotational motion. The disclosed magnetron comprises a magnetic element configured to generate a magnetic field. The magnetic element is attached to an elastic element connected between the magnetic element and a rotational shaft configured to rotate magnetic element about a center of the sputtering target. The elastic element is configured to vary its length during rotation of the magnetic element to change the radial distance between the rotational shaft and the magnetic element. The resulting magnetic track enables concurrent motion of the magnetic element in both an angular direction and a radial direction. Such motion enables a symmetric magnetic track that provides good wafer uniformity and a short deposition time.
Abstract translation: 在一些实施例中，本公开涉及等离子体处理系统，其包括被配置为通过振动和旋转运动的组合提供对称磁轨的磁控管。 所公开的磁控管包括被配置为产生磁场的磁性元件。 磁性元件附接到连接在磁性元件和旋转轴之间的弹性元件，该旋转轴构造成围绕溅射靶的中心旋转磁性元件。 弹性元件构造成在磁性元件的旋转期间改变其长度以改变旋转轴和磁性元件之间的径向距离。 由此产生的磁道能够使磁性元件在角度方向和径向方向上同时运动。 这样的运动能够提供良好的晶片均匀性和较短的沉积时间的对称磁迹。
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公开(公告)号：USD524837S1
公开(公告)日：2006-07-11
申请号：US29219110
申请日：2004-12-14
Applicant: Chih-Hui Chen , Bo-Hung Lin
Designer： Chih-Hui Chen , Bo-Hung Lin
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Patent Agency Ranking
公开(公告)号：US09093252B2
公开(公告)日：2015-07-28
申请号：US13397957
申请日：2012-02-16
Applicant: Bo-Hung Lin , Ming-Chih Tsai , You-Hua Chou , Chung-En Kao
Inventor： Bo-Hung Lin , Ming-Chih Tsai , You-Hua Chou , Chung-En Kao
CPC classification number: C23C14/351 , C23C14/35 , H01J37/32669 , H01J37/3408 , H01J37/3452 , H01J37/3455 , H01J37/3461
Abstract: In some embodiments, the present disclosure relates to a plasma processing system comprising a magnetron configured to provide a symmetric magnetic track through a combination of vibrational and rotational motion. The disclosed magnetron comprises a magnetic element configured to generate a magnetic field. The magnetic element is attached to an elastic element connected between the magnetic element and a rotational shaft configured to rotate magnetic element about a center of the sputtering target. The elastic element is configured to vary its length during rotation of the magnetic element to change the radial distance between the rotational shaft and the magnetic element. The resulting magnetic track enables concurrent motion of the magnetic element in both an angular direction and a radial direction. Such motion enables a symmetric magnetic track that provides good wafer uniformity and a short deposition time.
Abstract translation: 在一些实施例中，本公开涉及等离子体处理系统，其包括被配置为通过振动和旋转运动的组合提供对称磁轨的磁控管。 所公开的磁控管包括被配置为产生磁场的磁性元件。 磁性元件附接到连接在磁性元件和旋转轴之间的弹性元件，该旋转轴构造成围绕溅射靶的中心旋转磁性元件。 弹性元件构造成在磁性元件的旋转期间改变其长度以改变旋转轴和磁性元件之间的径向距离。 由此产生的磁道能够使磁性元件在角度方向和径向方向上同时运动。 这样的运动能够提供良好的晶片均匀性和较短的沉积时间的对称磁迹。
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公开(公告)号：US20130186338A1
公开(公告)日：2013-07-25
申请号：US13355770
申请日：2012-01-23
Applicant: Ming-Chin Tsai , Bo-Hung Lin , You-Hua Chou , Chung-En Kao
Inventor： Ming-Chin Tsai , Bo-Hung Lin , You-Hua Chou , Chung-En Kao
CPC classification number: H01L21/324 , C23C14/50 , C23C14/541 , C23C14/5806 , H01L21/67115 , H01L21/76838
Abstract: The present disclosure is directed to a physical vapor deposition system configured to heat a semiconductor substrate or wafer. In some embodiments the disclosed physical vapor deposition system comprises at least one heat source having one or more lamp modules for heating of the substrate. The lamp modules may be separated from the substrate by a shielding device. In some embodiments, the shielding device comprises a one-piece device or a two piece device. The disclosed physical vapor deposition system can heat the semiconductor substrate, reflowing a metal film deposited thereon without the necessity for separate chambers, thereby decreasing process time, requiring less thermal budget, and decreasing substrate damage.
Abstract translation: 本公开涉及被配置为加热半导体衬底或晶片的物理气相沉积系统。 在一些实施例中，所公开的物理气相沉积系统包括至少一个热源，其具有用于加热基底的一个或多个灯模块。 灯模块可以通过屏蔽装置与衬底分离。 在一些实施例中，屏蔽装置包括一件式装置或两件式装置。 所公开的物理气相沉积系统可以加热半导体衬底，回流沉积在其上的金属膜，而不需要单独的室，从而减少处理时间，需要较少的热量预算和减少衬底损伤。
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公开(公告)号：US09279179B2
公开(公告)日：2016-03-08
申请号：US13366805
申请日：2012-02-06
Applicant: Ming-Chin Tsai , Bo-Hung Lin , Chung-En Kao , Chin-Hsiang Lin
Inventor： Ming-Chin Tsai , Bo-Hung Lin , Chung-En Kao , Chin-Hsiang Lin
CPC classification number: C23C14/351 , H01J37/3211 , H01J37/34 , H05H1/46 , H05H2001/4667
Abstract: In some embodiments, the present disclosure relates to a plasma processing system configured to form a symmetric plasma distribution around a workpiece. In some embodiments, the plasma processing system comprises a plurality of coils symmetrically positioned around a processing chamber. When a current is provided to the coils, separate magnetic fields, which operate to ionize the target atoms, emanate from the separate coils. The separate magnetic fields operate upon ions within the coils to form a plasma on the interior of the coils. Furthermore, the separate magnetic fields are superimposed upon one another between coils to form a plasma on the exterior of the coils. Therefore, the disclosed plasma processing system can form a plasma that continuously extends along a perimeter of the workpiece with a high degree of uniformity (i.e., without dead spaces).
Abstract translation: 在一些实施例中，本公开涉及一种被配置为在工件周围形成对称等离子体分布的等离子体处理系统。 在一些实施例中，等离子体处理系统包括围绕处理室对称定位的多个线圈。 当向线圈提供电流时，从分离的线圈发出分离的用于电离目标原子的磁场。 单独的磁场对线圈内的离子起作用以在线圈的内部形成等离子体。 此外，单独的磁场在线圈之间彼此重叠，以在线圈的外部形成等离子体。 因此，所公开的等离子体处理系统可以形成等离子体，该等离子体以高度均匀性（即，没有死空间）沿着工件的周边连续地延伸。
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公开(公告)号：US20130199926A1
公开(公告)日：2013-08-08
申请号：US13366805
申请日：2012-02-06
Applicant: Ming-Chih Tsai , Bo-Hung Lin , Chung-En Kao , Chin-Hsiang Lin
Inventor： Ming-Chih Tsai , Bo-Hung Lin , Chung-En Kao , Chin-Hsiang Lin
IPC: C23C14/34
CPC classification number: C23C14/351 , H01J37/3211 , H01J37/34 , H05H1/46 , H05H2001/4667
Abstract: In some embodiments, the present disclosure relates to a plasma processing system configured to form a symmetric plasma distribution around a workpiece. In some embodiments, the plasma processing system comprises a plurality of coils symmetrically positioned around a processing chamber. When a current is provided to the coils, separate magnetic fields, which operate to ionize the target atoms, emanate from the separate coils. The separate magnetic fields operate upon ions within the coils to form a plasma on the interior of the coils. Furthermore, the separate magnetic fields are superimposed upon one another between coils to form a plasma on the exterior of the coils. Therefore, the disclosed plasma processing system can form a plasma that continuously extends along a perimeter of the workpiece with a high degree of uniformity (i.e., without dead spaces).
Abstract translation: 在一些实施例中，本公开涉及一种被配置为在工件周围形成对称等离子体分布的等离子体处理系统。 在一些实施例中，等离子体处理系统包括围绕处理室对称定位的多个线圈。 当向线圈提供电流时，从分离的线圈发出分离的用于电离目标原子的磁场。 单独的磁场对线圈内的离子起作用以在线圈的内部形成等离子体。 此外，单独的磁场在线圈之间彼此重叠，以在线圈的外部形成等离子体。 因此，所公开的等离子体处理系统可以形成等离子体，该等离子体以高度均匀性（即，没有死空间）沿着工件的周边连续地延伸。
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公开(公告)号：US20130187546A1
公开(公告)日：2013-07-25
申请号：US13354604
申请日：2012-01-20
Applicant: Bo-Hung Lin , Ming-Chih Tsai , Chia-Ho Chen , Chung-En Kao
Inventor： Bo-Hung Lin , Ming-Chih Tsai , Chia-Ho Chen , Chung-En Kao
IPC: H05H1/04 , C23C16/50 , C23C16/52 , H01L21/3065
CPC classification number: H01J37/32669
Abstract: In some embodiments, the present disclosure relates to a plasma processing system that generates a magnetic field having a maximum strength that is independent of workpiece size. The plasma processing system has a plurality of side electromagnets that have a size which is independent of the workpiece size. The side electromagnets are located around a perimeter of a processing chamber configured to house a semiconductor workpiece. When a current is provided to the side electromagnets, separate magnetic fields emanate from separate positions around the workpiece. The separate magnetic fields contribute to the formation of an overall magnetic field that controls the distribution of plasma within the processing chamber. Because the size of the plurality of separate side magnets is independent of the workpiece size, the plurality of side magnets can generate a magnetic field having a maximum field strength that is independent of workpiece size.
Abstract translation: 在一些实施例中，本公开涉及一种产生具有与工件尺寸无关的最大强度的磁场的等离子体处理系统。 等离子体处理系统具有多个侧面电磁体，其尺寸独立于工件尺寸。 侧面电磁体位于被配置为容纳半导体工件的处理室的周边周围。 当向侧面电磁铁提供电流时，分离的磁场从工件周围的分离位置发出。 单独的磁场有助于形成控制处理室内等离子体分布的整个磁场。 由于多个分离侧磁体的尺寸与工件尺寸无关，所以多个侧磁体可产生具有独立于工件尺寸的最大磁场强度的磁场。
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