公开(公告)号：US20080318437A1

公开(公告)日：2008-12-25

申请号：US11834264

申请日：2007-08-06

Applicant: Chan Bae Kim ,  Jong Min Lee ,  Chae O Chung ,  Hyeon Ju An ,  Hyo Seok Lee ,  Sung Kyu Min

Inventor： Chan Bae Kim ,  Jong Min Lee ,  Chae O Chung ,  Hyeon Ju An ,  Hyo Seok Lee ,  Sung Kyu Min

IPC: H01L21/469

CPC classification number: H01L21/76825 ,  H01L21/76828 ,  H01L21/76829

Abstract: A semiconductor device is manufactured by forming a low dielectric constant layer on a semiconductor substrate which is formed with metal lines; implementing primary ultraviolet treatment of the low dielectric constant layer; forming a capping layer on the low dielectric constant layer having undergone the primary ultraviolet treatment; and implementing secondary ultraviolet treatment of the low dielectric constant layer including the capping layer.

Abstract translation: 半导体器件通过在由金属线形成的半导体衬底上形成低介电常数层来制造; 实施低介电常数层的初级紫外线处理; 在经过一次紫外线处理的低介电常数层上形成覆盖层; 并实施包括封盖层的低介电常数层的二次紫外线处理。

公开(公告)号：US07838414B2

公开(公告)日：2010-11-23

申请号：US11834264

申请日：2007-08-06

Applicant: Chan Bae Kim ,  Jong Min Lee ,  Chae O Chung ,  Hyeon Ju An ,  Hyo Seok Lee ,  Sung Kyu Min

Inventor： Chan Bae Kim ,  Jong Min Lee ,  Chae O Chung ,  Hyeon Ju An ,  Hyo Seok Lee ,  Sung Kyu Min

IPC: H01L21/4763

CPC classification number: H01L21/76825 ,  H01L21/76828 ,  H01L21/76829

Abstract: A semiconductor device is manufactured by forming a low dielectric constant layer on a semiconductor substrate which is formed with metal lines; implementing primary ultraviolet treatment of the low dielectric constant layer; forming a capping layer on the low dielectric constant layer having undergone the primary ultraviolet treatment; and implementing secondary ultraviolet treatment of the low dielectric constant layer including the capping layer.

Abstract translation: 半导体器件通过在由金属线形成的半导体衬底上形成低介电常数层来制造; 实施低介电常数层的初级紫外线处理; 在经过一次紫外线处理的低介电常数层上形成覆盖层; 并实施包括封盖层的低介电常数层的二次紫外线处理。