公开(公告)号：US5268068A

公开(公告)日：1993-12-07

申请号：US987973

申请日：1992-12-08

Applicant: Donald R. Cowell ,  Mark W. Jones ,  Chang-Ching Kin ,  John J. Nahlik ,  John A. Trumpetto

Inventor： Donald R. Cowell ,  Mark W. Jones ,  Chang-Ching Kin ,  John J. Nahlik ,  John A. Trumpetto

IPC: G03F1/20 ,  H05K3/12 ,  B44C1/22 ,  C23F1/00

CPC classification number: G03F1/20 ,  H05K3/1216

Abstract: An improved metal mask-making process is disclosed which involves starting with a metal mask having etched apertures using existing processes and coating it conformably with a substantially thick layer, so as to reduce the minimum aperture size while increasing the metal mask thickness. The conformal layer is chosen for minimum stress, good adhesion and thermal compatibility to the original metal mask material. Additional thin conformal coatings can be provided for imparting mechanical and chemical resistance to the metal mask.

Abstract translation: 公开了一种改进的金属掩模制造方法，其包括使用现有工艺的具有蚀刻孔的金属掩模开始并且与基本上厚的层一致地涂覆，以便在增加金属掩模厚度的同时减小最小孔径尺寸。 选择适形层用于最小应力，良好的粘合性和与原始金属掩模材料的热相容性。 可以提供附加的薄共形涂层以赋予金属掩模以机械和耐化学性。

公开(公告)号：US5770523A

公开(公告)日：1998-06-23

申请号：US709697

申请日：1996-09-09

Applicant: Ming-Yeon Hung ,  Janet Yu ,  Weng-Liang Fang ,  Chang-Ching Kin

Inventor： Ming-Yeon Hung ,  Janet Yu ,  Weng-Liang Fang ,  Chang-Ching Kin

IPC: G03F7/42 ,  H01L21/02 ,  H01L21/3213 ,  C25F3/30

CPC classification number: H01L21/02071 ,  G03F7/42 ,  Y10S438/906 ,  Y10S438/963

Abstract: A method is provided for the removal of the surface layer of the residual photoresist mask pattern used for metal subtractive etching which uses the same reactor equipment but employs reactive fluorine-containing gases to form volatile compounds with the surface layer, so that subsequently a conventional oxygen plasma stripping process can be used for complete resist residue removal without requiring excessive temperature exposure of the integrated circuit devices.

Abstract translation: 提供了一种用于去除用于金属减去蚀刻的残余光致抗蚀剂掩模图案的表面层的方法，其使用相同的反应器设备，但是使用反应性含氟气体与表面层形成挥发性化合物，使得随后常规氧 等离子体剥离工艺可以用于完整的抗蚀剂残留物去除，而​​不需要集成电路器件的过度的温度暴露。

公开(公告)号：US5284549A

公开(公告)日：1994-02-08

申请号：US816190

申请日：1992-01-02

Applicant: Michael S. Barnes ,  Melanie M. Chow ,  John C. Forster ,  Michael A. Fury ,  Chang-Ching Kin ,  Harris C. Jones ,  John H. Keller ,  James A. O'Neill

Inventor： Michael S. Barnes ,  Melanie M. Chow ,  John C. Forster ,  Michael A. Fury ,  Chang-Ching Kin ,  Harris C. Jones ,  John H. Keller ,  James A. O'Neill

IPC: C03C15/00 ,  H01L21/311 ,  H01L21/00

CPC classification number: C03C15/00 ,  H01L21/31116 ,  Y10S438/97

Abstract: A CHF.sub.3 -based RIE etching process is disclosed using a nitrogen additive to provide high selectivity of SiO.sub.2 or PSG to Al.sub.2 O.sub.3, low chamfering of a photoresist mask, and low RIE lag. The process uses a pressure in the range of about 200-1,000 mTorr, and an appropriate RF bias power, selected based on the size of the substrate being etched. The substrate mounting pedestal is preferably maintained at a temperature of about 0.degree. C. Nitrogen can be provided from a nitrogen-containing molecule, or as N.sub.2. He gas can be added to the gas mixture to enhance the RIE lag-reducing effect of the nitrogen.

Abstract translation: 使用氮添加剂公开了基于CHF 3的RIE蚀刻工艺，以提供SiO 2或PSG对Al 2 O 3的高选择性，光刻胶掩模的低倒角和低RIE滞后。 该方法使用约200-1,000mTorr范围内的压力和基于被蚀刻的基底的尺寸选择的适当的RF偏置功率。 衬底安装基座优选保持在约0℃的温度。氮可以由含氮分子或N 2提供。 可以将气体加入到气体混合物中，以提高氮气的RIE滞后效应。