公开(公告)号：US06169298A

公开(公告)日：2001-01-02

申请号：US09131727

申请日：1998-08-10

Applicant: Ying-Fu Lin ,  Liang-Tung Chang ,  Shiang-Peng Cheng ,  Kuan-Chu Kuo ,  Chiao-Yun Lin ,  Fu-Chou Liu

Inventor： Ying-Fu Lin ,  Liang-Tung Chang ,  Shiang-Peng Cheng ,  Kuan-Chu Kuo ,  Chiao-Yun Lin ,  Fu-Chou Liu

IPC: H01L3300

CPC classification number: H01L33/02 ,  H01L33/14 ,  H01L33/30

Abstract: A semiconductor light emitting device, such as the light emitting diode (LED) or the laser diode (LD), having a structure in which a light emitting area is a double heterostructure or a multi-layer quantum well structure. The light emitting area is formed on a substrate. Subsequently, an electrically conductive oxide layer as a transparent window layer to eliminate the crowding effect is formed on the light emitting area. The substrate layer consists of a GaAs substrate and a GaAsP layer to increasing the band gap energy of the substrate. The electrically conductive oxide layer is formed of AlZnO(x) material, having a lower electrical resistivity and a high transparency in the visible wavelength region. The window layer is formed using a physical vapor deposition or a metalorganic chemical vapor deposition.

Abstract translation: 诸如发光二极管（LED）或激光二极管（LD）的半导体发光器件具有其中发光区域是双异质结构或多层量子阱结构的结构。 发光区域形成在基板上。 随后，在发光区域上形成作为透明窗口层的导电氧化物层以消除拥挤效应。 衬底层由GaAs衬底和GaAsP层组成，以增加衬底的带隙能量。 导电氧化物层由AlZnO（x）材料形成，具有较低的电阻率和可见光波长区域的高透明度。 窗层使用物理气相沉积或金属有机化学气相沉积形成。

公开(公告)号：US06008507A

公开(公告)日：1999-12-28

申请号：US144908

申请日：1998-09-01

Applicant: Ying-Fu Lin ,  Liang-Tung Chang ,  Shiang-Peng Cheng ,  Kuan-Chu Kuo ,  Chiao-Yun Lin ,  Fu-Chou Liu

Inventor： Ying-Fu Lin ,  Liang-Tung Chang ,  Shiang-Peng Cheng ,  Kuan-Chu Kuo ,  Chiao-Yun Lin ,  Fu-Chou Liu

IPC: H01L33/10 ,  H01L33/30 ,  H01L33/00 ,  H01L31/0328

CPC classification number: H01L33/30 ,  H01L33/10

Abstract: A structure of a semiconductor light emitting device includes a GaAs substrate, a GaAsP interface substrate, a first cladding layer, an active layer, and a second cladding layer. The GaAsP interface substrate layer is formed on the GaAs substrate, in addition, the GaAsP interface substrate layer formed on the substrate is of a thickness such that the upper surface of the GaAsP interface substrate layer adjacent to the substrate is composed of single crystal. The first cladding layer of a first conductivity is formed on the GaAsP interface substrate layer. The active layer is formed on the first cladding layer, from which the light is generated in the active layer. The second cladding layer of a second conductivity is formed on the active layer.

Abstract translation: 半导体发光器件的结构包括GaAs衬底，GaAsP界面衬底，第一覆层，有源层和第二覆层。 在GaAs衬底上形成GaAsP界面衬底层，此外，形成在衬底上的GaAsP界面衬底层的厚度使得与衬底相邻的GaAsP界面衬底层的上表面由单晶构成。 在GaAsP界面基底层上形成第一导电性的第一覆层。 活性层形成在第一包覆层上，在活性层中产生光。 在有源层上形成第二导电性的第二覆层。

公开(公告)号：US6097041A

公开(公告)日：2000-08-01

申请号：US138992

申请日：1998-08-24

Applicant: Ying-Fu Lin ,  Liang-Tung Chang ,  Shiang-Peng Cheng ,  Kuan-Chu Kuo ,  Chiao-Yun Lin ,  Fu-Chou Liu

Inventor： Ying-Fu Lin ,  Liang-Tung Chang ,  Shiang-Peng Cheng ,  Kuan-Chu Kuo ,  Chiao-Yun Lin ,  Fu-Chou Liu

IPC: H01L33/10 ,  H01L33/00

CPC classification number: H01L33/105

Abstract: A light emitting diode includes a semiconductor substrate of a first conductivity type. A first electrode is formed on a part of the substrate. A reflection stack of the first conductivity type is formed on the substrate. An active layer is then formed on the reflection stack. An anti-reflection stack of a second conductivity type is grown on the active layer, and the anti-reflection stack consists of a plurality of layers, wherein each layer has a thickness of (m+1).lambda./2, where m is zero or a positive integer and .lambda. is a wavelength of radiation generated by the active layer. A window layer of the second conductivity type is formed on the anti-reflection stack. A second electrode is then formed on a part of the window layer.

Abstract translation: 发光二极管包括第一导电类型的半导体衬底。 第一电极形成在基板的一部分上。 在基板上形成第一导电类型的反射叠层。 然后在反射叠层上形成有源层。 在有源层上生长第二导电类型的抗反射叠层，并且抗反射叠层由多个层组成，其中每层具有（m + 1）λ/ 2的厚度，其中m为零 或正整数，λ是由有源层产生的辐射的波长。 第二导电类型的窗口层形成在防反射叠层上。 然后在窗口层的一部分上形成第二电极。