Method for determining touch signal generating by sensor structure of touch panel
    1.
    发明授权
    Method for determining touch signal generating by sensor structure of touch panel 有权
    用于确定触摸面板传感器结构产生的触摸信号的方法

    公开(公告)号:US08294048B2

    公开(公告)日:2012-10-23

    申请号:US13467060

    申请日:2012-05-09

    CPC classification number: G06F3/044

    Abstract: A sensor structure of a touch panel and a method of determining a touch signal generated by the same are disclosed. The sensor structure includes a plurality of sensor lines disposed on a surface of a substrate, and a control circuit electrically connected to the sensor lines. Each of the sensor lines has a plurality of conductive pads and a conductive line electrically connected the conductive pads. The control circuit receives a touch signal from one of the sensor lines. The touch signal is resulting from a touch capacitance generated between a touch and one of the conductive pads of the sensor line. The control circuit calculates the position of the touch based on the touch capacitance. In addition, the touch capacitance generated by a conductive pad close to the control circuit is larger than the touch capacitance generated by another conductive pad further away from the control circuit.

    Abstract translation: 公开了触摸面板的传感器结构和确定由其产生的触摸信号的方法。 传感器结构包括设置在基板的表面上的多个传感器线以及与传感器线电连接的控制电路。 每个传感器线具有多个导电焊盘,并且导电线与导电焊盘电连接。 控制电路接收来自传感器线之一的触摸信号。 触摸信号是由触摸和传感器线路的一个导电焊盘之间产生的触摸电容产生的。 控制电路基于触摸电容来计算触摸的位置。 此外,靠近控制电路的导电焊盘产生的触摸电容大于远离控制电路的另一个导电焊盘产生的触摸电容。

    METHOD OF FABRICATING A SEMICONDUCTOR DEVICE HAVING A CAPACITOR
    2.
    发明申请
    METHOD OF FABRICATING A SEMICONDUCTOR DEVICE HAVING A CAPACITOR 审中-公开
    制造具有电容器的半导体器件的方法

    公开(公告)号:US20070254417A1

    公开(公告)日:2007-11-01

    申请号:US11777294

    申请日:2007-07-13

    CPC classification number: H01L28/40 H01L27/1085

    Abstract: A semiconductor device having a capacitor is provided. The semiconductor device includes a substrate, a capacitor and a metal-oxide-semiconductor (MOS) transistor. The MOS transistor is located in a MOS transistor region of the substrate, and the MOS transistor region has a first bottom diffusion region. The capacitor is located in a capacitor region of the substrate and consisted of a second bottom diffusion region located in the substrate, a first dielectric layer located over the second bottom diffusion region, a bottom conductive layer located over the first dielectric layer, a second dielectric layer located over the bottom conductive layer, and a top conductive layer located over the second dielectric layer. The first bottom diffusion region and the second bottom diffusion region are different conductive type.

    Abstract translation: 提供具有电容器的半导体器件。 半导体器件包括衬底,电容器和金属氧化物半导体(MOS)晶体管。 MOS晶体管位于衬底的MOS晶体管区域中,并且MOS晶体管区域具有第一底部扩散区域。 电容器位于衬底的电容器区域中,由位于衬底中的第二底部扩散区域,位于第二底部扩散区域上方的第一电介质层,位于第一电介质层上方的底部导电层,第二电介质层 位于所述底部导电层上方的层,以及位于所述第二介电层上方的顶部导电层。 第一底部扩散区域和第二底部扩散区域是不同的导电类型。

    HIGH VOLTAGE METAL-OXIDE-SEMICONDUCTOR TRANSISTOR DEVICES AND METHOD OF MAKING THE SAME

    公开(公告)号:US20060292803A1

    公开(公告)日:2006-12-28

    申请号:US11468782

    申请日:2006-08-31

    Abstract: A method for fabricating metal-oxide-semiconductor devices is provided. The method includes forming a gate dielectric layer on a substrate; depositing a polysilicon layer on the gate dielectric layer; forming a resist mask on the polysilicon layer; etching the polysilicon layer not masked by the resist mask, thereby forming a gate electrode; etching a thickness of the gate dielectric layer not covered by the gate electrode; stripping the resist mask; forming a salicide block resist mask covering the gate electrode and a portions of the remaining gate dielectric layer; etching away the remaining gate dielectric layer not covered by the salicide block resist mask, thereby exposing the substrate and forming a salicide block lug portions on two opposite sides of the gate electrode; and making a metal layer react with the substrate, thereby forming a salicide layer that is kept a distance “d” away from the gate electrode.

    High voltage metal-oxide-semiconductor transistor devices and method of making the same
    4.
    发明授权
    High voltage metal-oxide-semiconductor transistor devices and method of making the same 有权
    高压金属氧化物半导体晶体管器件及其制造方法

    公开(公告)号:US07118954B1

    公开(公告)日:2006-10-10

    申请号:US10908784

    申请日:2005-05-26

    Abstract: A method for fabricating metal-oxide-semiconductor devices is provided. The method includes forming a gate dielectric layer on a substrate; depositing a polysilicon layer on the gate dielectric layer; forming a resist mask on the polysilicon layer; etching the polysilicon layer not masked by the resist mask, thereby forming a gate electrode; etching a thickness of the gate dielectric layer not covered by the gate electrode; stripping the resist mask; forming a salicide block resist mask covering the gate electrode and a portions of the remaining gate dielectric layer; etching away the remaining gate dielectric layer not covered by the salicide block resist mask, thereby exposing the substrate and forming a salicide block lug portions on two opposite sides of the gate electrode; and making a metal layer react with the substrate, thereby forming a salicide layer that is kept a distance “d” away from the gate electrode.

    Abstract translation: 提供了制造金属氧化物半导体器件的方法。 该方法包括在基板上形成栅介电层; 在所述栅极电介质层上沉积多晶硅层; 在所述多晶硅层上形成抗蚀剂掩模; 蚀刻未被抗蚀剂掩模掩蔽的多晶硅层,从而形成栅电极; 蚀刻未被栅电极覆盖的栅极电介质层的厚度; 剥离抗蚀剂掩模; 形成覆盖所述栅极电极和所述剩余栅极介电层的一部分的自对准硅化物阻挡掩模; 蚀刻除了未被所述自对准硅化物阻挡掩模掩盖的剩余栅极电介质层,从而暴露所述基板并在所述栅电极的两个相对侧上形成自对准硅嵌块凸块部分; 并且使金属层与基板反应,从而形成与栅电极保持距离“d”的自对准硅化物层。

    Touch input device
    5.
    发明授权
    Touch input device 有权
    触摸输入设备

    公开(公告)号:US08587531B2

    公开(公告)日:2013-11-19

    申请号:US12481928

    申请日:2009-06-10

    CPC classification number: G06F3/044 G06F3/0416

    Abstract: A touch input device includes a substrate, plural sensible conductive layers and plural first switch units. The substrate is provided with an upper surface, the sensible conductive layers are all configured on the upper surface and are arranged in columns and rows. The first switch units are configured on the substrate and are electrically connected with the sensible conductive layers. By the first switch units, same columns of the sensible conductive layers can conduct electrically with one another and same rows of the sensible conductive layers can conduct electrically with one another.

    Abstract translation: 触摸输入装置包括基板,多个感应导电层和多个第一开关单元。 基板设置有上表面,所述感性导电层全部构造在上表面上并且以列和列布置。 第一开关单元配置在基板上并且与感性导电层电连接。 通过第一开关单元,相同的感性导电层的列可以彼此电导电,并且相应的行的感性导电层可彼此导电。

    METHOD FOR DETERMINING TOUCH SIGNAL GENERATING BY SENSOR STRUCTURE OF TOUCH PANEL
    7.
    发明申请
    METHOD FOR DETERMINING TOUCH SIGNAL GENERATING BY SENSOR STRUCTURE OF TOUCH PANEL 有权
    用于确定触摸面板传感器结构产生触觉信号的方法

    公开(公告)号:US20120218224A1

    公开(公告)日:2012-08-30

    申请号:US13467060

    申请日:2012-05-09

    CPC classification number: G06F3/044

    Abstract: A sensor structure of a touch panel and a method of determining a touch signal generated by the same are disclosed. The sensor structure includes a plurality of sensor lines disposed on a surface of a substrate, and a control circuit electrically connected to the sensor lines. Each of the sensor lines has a plurality of conductive pads and a conductive line electrically connected the conductive pads. The control circuit receives a touch signal from one of the sensor lines. The touch signal is resulting from a touch capacitance generated between a touch and one of the conductive pads of the sensor line. The control circuit calculates the position of the touch based on the touch capacitance. In addition, the touch capacitance generated by a conductive pad close to the control circuit is larger than the touch capacitance generated by another conductive pad further away from the control circuit.

    Abstract translation: 公开了触摸面板的传感器结构和确定由其产生的触摸信号的方法。 传感器结构包括设置在基板的表面上的多个传感器线以及与传感器线电连接的控制电路。 每个传感器线具有多个导电焊盘,并且导电线与导电焊盘电连接。 控制电路接收来自传感器线之一的触摸信号。 触摸信号是由触摸和传感器线路的一个导电焊盘之间产生的触摸电容产生的。 控制电路基于触摸电容来计算触摸的位置。 此外,靠近控制电路的导电焊盘产生的触摸电容大于远离控制电路的另一个导电焊盘产生的触摸电容。

    DRIVING METHOD FOR PHOTOSENSOR ARRAY PANEL
    8.
    发明申请
    DRIVING METHOD FOR PHOTOSENSOR ARRAY PANEL 审中-公开
    照相机阵列驱动方法

    公开(公告)号:US20120091319A1

    公开(公告)日:2012-04-19

    申请号:US12965438

    申请日:2010-12-10

    CPC classification number: G01J1/44 G06F3/0416 G06F3/042

    Abstract: A driving method for a photosensor array panel including a plurality of photosensor strips, a plurality of scan lines, at least a dummy photosensor strip, and at least a dummy scan line is provided. The photosensor strips are arranged side by side and located beside the dummy photosensor strip. The scan lines are electrically connected to the photosensor strips, and the dummy scan line is electrically connected to the dummy photosensor strip. The driving method includes the following steps. First, the photosensor strips are turned on in sequence through the scan lines. When none of the photosensor strips is turned on, the dummy photosensor strip will be turned on through the dummy scan line.

    Abstract translation: 提供了包括多个光电传感器条,多个扫描线,至少一个虚拟光电传感器条和至少一个虚拟扫描线的光电传感器阵列面板的驱动方法。 光电传感器条并排布置,位于虚拟光电传感器条旁边。 扫描线电连接到光电传感器条,虚拟扫描线电连接到虚拟光电传感器条。 驱动方法包括以下步骤。 首先,通过扫描线依次打开光电传感器条。 当没有光电传感器条打开时,虚拟光电传感器条将通过虚拟扫描线打开。

    SURFACE ANTENNA FORMATION METHOD
    9.
    发明申请
    SURFACE ANTENNA FORMATION METHOD 审中-公开
    表面天线形成方法

    公开(公告)号:US20110165344A1

    公开(公告)日:2011-07-07

    申请号:US12683143

    申请日:2010-01-06

    CPC classification number: H01Q1/243

    Abstract: A surface antenna formation method to form an antenna on the surface of an antenna carrier economically by means of spraying a conducting paint into a patterned opening of a shield being covered on the antenna carrier and then employing a laser etching technique to remove burrs from the border of the antenna thus formed on the surface of the antenna carrier after removal of the shield.

    Abstract translation: 一种表面天线形成方法,通过将天线载体表面上的天线形成天线,通过将导电涂料喷涂到天线载体上的覆盖图案的开口中,然后采用激光蚀刻技术从边界去除毛刺 这样形成在天线载体的表面上的天线在去除屏蔽之后。

    SENSOR STRUCTURE OF TOUCH PANEL AND METHOD FOR DETERMINING TOUCH SIGNAL GENERATING BY SENSOR STRUCTURE OF TOUCH PANEL
    10.
    发明申请
    SENSOR STRUCTURE OF TOUCH PANEL AND METHOD FOR DETERMINING TOUCH SIGNAL GENERATING BY SENSOR STRUCTURE OF TOUCH PANEL 有权
    触控面板的传感器结构和触摸面板传感器结构产生触觉信号的方法

    公开(公告)号:US20100263944A1

    公开(公告)日:2010-10-21

    申请号:US12566676

    申请日:2009-09-25

    CPC classification number: G06F3/044

    Abstract: A sensor structure of a touch panel and a method of determining a touch signal generated by the same are disclosed. The sensor structure includes a plurality of sensor lines disposed on a surface of a substrate, and a control circuit electrically connected to the sensor lines. Each of the sensor lines has a plurality of conductive pads and a conductive line electrically connected the conductive pads. The control circuit receives a touch signal from one of the sensor lines. The touch signal is resulting from a touch capacitance generated between a touch and one of the conductive pads of the sensor line. The control circuit calculates the position of the touch based on the touch capacitance. In addition, the touch capacitance generated by a conductive pad close to the control circuit is larger than the touch capacitance generated by another conductive pad further away from the control circuit.

    Abstract translation: 公开了触摸面板的传感器结构和确定由其产生的触摸信号的方法。 传感器结构包括设置在基板的表面上的多个传感器线以及与传感器线电连接的控制电路。 每个传感器线具有多个导电焊盘,并且导电线与导电焊盘电连接。 控制电路接收来自传感器线之一的触摸信号。 触摸信号是由触摸和传感器线路的一个导电焊盘之间产生的触摸电容产生的。 控制电路基于触摸电容来计算触摸的位置。 此外,靠近控制电路的导电焊盘产生的触摸电容大于远离控制电路的另一个导电焊盘产生的触摸电容。

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