公开(公告)号：US09219012B2

公开(公告)日：2015-12-22

申请号：US13294945

申请日：2011-11-11

Applicant: Chih-Ping Lin ,  Pi-Kuang Chuang ,  Hung-Li Chang ,  Shih-Ming Chen ,  Hsiao-Ying Yang

Inventor： Chih-Ping Lin ,  Pi-Kuang Chuang ,  Hung-Li Chang ,  Shih-Ming Chen ,  Hsiao-Ying Yang

IPC: H01L29/00 ,  H01L21/8234 ,  H01L21/8238

CPC classification number: H01L21/823481 ,  H01L21/823412 ,  H01L21/823493 ,  H01L21/823807 ,  H01L21/823878 ,  H01L21/823892

Abstract: A method for fabricating a semiconductor device is provided. A substrate comprising a P-well is provided. A low voltage device area and a high voltage device area are defined in the P-well. A photoresist layer is formed on the substrate. A photomask comprising a shielding region is provided. The shielding region is corresponded to the high voltage device area. A pattern of the photomask is transferred to the photoresist layer on the substrate by a photolithography process using the photomask. A P-type ion field is formed outside of the high-voltage device area by selectively doping P-type ions into the substrate using the photoresist layer as a mask.

Abstract translation: 提供一种制造半导体器件的方法。 提供了包括P阱的衬底。 在P井中定义了低压装置区域和高压装置区域。 在基板上形成光致抗蚀剂层。 提供了包括屏蔽区域的光掩模。 屏蔽区域对应于高电压设备区域。 通过使用光掩模的光刻工艺将光掩模的图案转移到基板上的光致抗蚀剂层。 通过使用光致抗蚀剂层作为掩模，通过将P型离子选择性地掺杂到衬底中，在高电压器件区域的外部形成P型离子场。

公开(公告)号：US08067283B2

公开(公告)日：2011-11-29

申请号：US12618585

申请日：2009-11-13

Applicant: Chih-Ping Lin ,  Shih-Ming Chen ,  Hsiao-Ying Yang ,  Wen-Hsien Liu ,  Po-Sheng Hu

Inventor： Chih-Ping Lin ,  Shih-Ming Chen ,  Hsiao-Ying Yang ,  Wen-Hsien Liu ,  Po-Sheng Hu

IPC: H01L21/8238

CPC classification number: H01L21/823462

Abstract: A semiconductor device fabricating method is described. The semiconductor device fabricating method includes providing a substrate. A first gate insulating layer and a second gate insulating layer are formed on the substrate, respectively. A gate layer is blanketly formed. A portion of the gate layer, the first gate insulating layer and the second gate insulating layer are removed to form a first gate, a remaining first gate insulating layer, a second gate and a remaining second gate insulating layer. The remaining first gate insulating layer not covered by the first gate has a first thickness, and the remaining second gate insulating layer not covered by the second gate has a second thickness, wherein a ratio between the first thickness and the second thickness is about 10 to 20. A pair of first spacers and a pair of second spacers are formed on sidewalls of the first gate and the second gate, respectively.

Abstract translation: 描述半导体器件制造方法。 半导体器件制造方法包括提供基板。 分别在基板上形成第一栅极绝缘层和第二栅极绝缘层。 门层完全形成。 去除栅极层，第一栅极绝缘层和第二栅极绝缘层的一部分以形成第一栅极，剩余的第一栅极绝缘层，第二栅极和剩余的第二栅极绝缘层。 未被第一栅极覆盖的剩余的第一栅极绝缘层具有第一厚度，并且未被第二栅极覆盖的剩余的第二栅极绝缘层具有第二厚度，其中第一厚度和第二厚度之间的比率为约10度 分别在第一栅极和第二栅极的侧壁上形成一对第一间隔物和一对第二间隔物。

公开(公告)号：US08080455B2

公开(公告)日：2011-12-20

申请号：US12177779

申请日：2008-07-22

Applicant: Chih-Ping Lin ,  Pi-Kuang Chuang ,  Hung-Li Chang ,  Shih-Ming Chen ,  Hsiao-Ying Yang

Inventor： Chih-Ping Lin ,  Pi-Kuang Chuang ,  Hung-Li Chang ,  Shih-Ming Chen ,  Hsiao-Ying Yang

IPC: H01L21/8238

CPC classification number: H01L21/823481 ,  H01L21/823412 ,  H01L21/823493 ,  H01L21/823807 ,  H01L21/823878 ,  H01L21/823892

Abstract: A method for fabricating a semiconductor device is provided. A substrate comprising a P-well is provided. A low voltage device area and a high voltage device area are defined in the P-well. A photoresist layer is formed on the substrate. A photomask comprising a shielding region is provided. The shielding region is corresponded to the high voltage device area. A pattern of the photomask is transferred to the photoresist layer on the substrate by a photolithography process using the photomask. A P-type ion field is formed outside of the high-voltage device area by selectively doping P-type ions into the substrate using the photoresist layer as a mask.

Abstract translation: 提供一种制造半导体器件的方法。 提供了包括P阱的衬底。 在P井中定义了低压装置区域和高压装置区域。 在基板上形成光致抗蚀剂层。 提供了包括屏蔽区域的光掩模。 屏蔽区域对应于高电压设备区域。 通过使用光掩模的光刻工艺将光掩模的图案转移到基板上的光致抗蚀剂层。 通过使用光致抗蚀剂层作为掩模，通过将P型离子选择性地掺杂到衬底中，在高电压器件区域的外部形成P型离子场。

公开(公告)号：US08063439B2

公开(公告)日：2011-11-22

申请号：US12953347

申请日：2010-11-23

Applicant: Chih-Ping Lin ,  Pi-Kuang Chuang ,  Hung-Li Chang ,  Shih-Ming Chen ,  Hsiao-Ying Yang ,  Ya-Sheng Liu

Inventor： Chih-Ping Lin ,  Pi-Kuang Chuang ,  Hung-Li Chang ,  Shih-Ming Chen ,  Hsiao-Ying Yang ,  Ya-Sheng Liu

IPC: H01L29/80

CPC classification number: H01L29/7836 ,  H01L29/0653

Abstract: A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a semiconductor substrate which comprise a first type well and a second type well, and a plurality of junction regions therebetween, wherein each of the junction regions adjoins the first and the second type wells. A gate electrode disposed on the semiconductor substrate and overlies at least two of the junction regions. A source and a drain are in the semiconductor substrate oppositely adjacent to the gate electrode.

公开(公告)号：US07863147B2

公开(公告)日：2011-01-04

申请号：US12177766

申请日：2008-07-22

Applicant: Chih-Ping Lin ,  Pi-Kuang Chuang ,  Hung-Li Chang ,  Shih-Ming Chen ,  Hsiao-Ying Yang ,  Ya-Sheng Liu

Inventor： Chih-Ping Lin ,  Pi-Kuang Chuang ,  Hung-Li Chang ,  Shih-Ming Chen ,  Hsiao-Ying Yang ,  Ya-Sheng Liu

IPC: H01L21/00

CPC classification number: H01L29/7836 ,  H01L29/0653

Abstract: A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a semiconductor substrate which comprise a first type well and a second type well, and a plurality of junction regions therebetween, wherein each of the junction regions adjoins the first and the second type wells. A gate electrode disposed on the semiconductor substrate and overlies at least two of the junction regions. A source and a drain are in the semiconductor substrate oppositely adjacent to the gate electrode.

Abstract translation: 提供半导体器件及其制造方法。 半导体器件包括半导体衬底，其包括第一类型阱和第二类型阱以及它们之间的多个结区域，其中每个连接区域邻接第一和第二类型阱。 栅电极，设置在半导体衬底上并覆盖至少两个接合区域。 源极和漏极在与栅电极相对的半导体衬底中。

公开(公告)号：US20060220536A1

公开(公告)日：2006-10-05

申请号：US11392791

申请日：2006-03-30

Applicant: Wen-Jeng Lan ,  Chien-Yuan Feng ,  Yuan-Chang Tseng ,  Ting-Chou Chen ,  Sheng-Hsu Shih ,  Chien-Chih Chiang ,  Chih-Ping Lin

Inventor： Wen-Jeng Lan ,  Chien-Yuan Feng ,  Yuan-Chang Tseng ,  Ting-Chou Chen ,  Sheng-Hsu Shih ,  Chien-Chih Chiang ,  Chih-Ping Lin

IPC: H05B33/00

CPC classification number: H01L27/3283

Abstract: An organic electroluminescent device and method of manufacturing the same are provided. The device comprises a plurality of lower electrodes and at least one insulation layer crossing said lower electrodes. The insulation layer consists of parts of a bottom, a neck, and a top, wherein the action width of the top thereof is smaller than the bottom, which when such formed as a organic light emitting layer, the organic light emitting layer can touch the bottom of the insulation layer to prevent the short circuit from the abnormal contact of the opposite electrode and lower electrode. Further, a separator can be formed between each of the lower electrodes. The separator and the insulation layer can define each pixel position within the organic electroluminescent device. Wherein, the separator can isolate the horizontal light source of the organic light emitting layer to reduce the crosstalk noise for pixels each other.

Abstract translation: 提供一种有机电致发光器件及其制造方法。 该装置包括多个下电极和与所述下电极交叉的至少一个绝缘层。 绝缘层由底部，颈部和顶部的部分组成，其中其顶部的作用宽度小于底部，当形成为有机发光层时，有机发光层可以接触 绝缘层的底部，以防止相对电极和下电极的异常接触短路。 此外，可以在每个下电极之间形成隔膜。 分离器和绝缘层可以限定有机电致发光器件内的每个像素位置。 其中，分离器可以隔离有机发光层的水平光源，以减少像素彼此的串扰噪声。

公开(公告)号：US20140071061A1

公开(公告)日：2014-03-13

申请号：US13610894

申请日：2012-09-12

Applicant: Chih-Ping Lin ,  Chung-Hung Tsai ,  Yu-Wei Wang

Inventor： Chih-Ping Lin ,  Chung-Hung Tsai ,  Yu-Wei Wang

IPC: G06F3/0488

CPC classification number: G06F3/0488 ,  G06F3/04883 ,  H04N1/00392

Abstract: A method for controlling execution of camera related functions includes at least the following steps: while a camera is active in a specific operational mode, receiving a user input which includes a gesture pattern; searching a target command mapping from a plurality of pre-defined command mappings according to the gesture pattern, wherein each of the pre-defined command mappings defines at least one pre-defined camera related function mapped to a pre-defined gesture pattern; and controlling execution of each camera related function defined by the target command mapping.

Abstract translation: 控制摄像机相关功能的执行方法至少包括以下步骤：当照相机在特定操作模式下有效时，接收包括手势图案的用户输入; 根据所述手势模式从多个预定义的命令映射搜索目标命令映射，其中每个所述预定义命令映射定义映射到预定义的手势模式的至少一个预定义相机功能; 并且控制由目标命令映射定义的每个相机相关功能的执行。

公开(公告)号：US08914657B2

公开(公告)日：2014-12-16

申请号：US13275528

申请日：2011-10-18

Applicant: Chih-Ping Lin

Inventor： Chih-Ping Lin

IPC: G06F1/26 ,  G06F1/32 ,  G06F13/28

CPC classification number: G06F13/28 ,  G06F1/324 ,  G06F1/3287 ,  G06F1/3293 ,  Y02D10/122 ,  Y02D10/126 ,  Y02D10/171

Abstract: A mobile device chip is provided. The mobile device chip includes a main processor, a multimedia processor, and a direct memory access (DMA) circuit. The multimedia processor is electrically coupled to the main processor. The DMA circuit accesses storage, and the DMA circuit is electrically coupled to the multimedia processor. When the mobile device chip operates in a normal mode, the main processor provides file accessing information of at least part of an audio file stored in the storage to the multimedia processor. When the mobile device chip operates in a power-saving mode, the multimedia processor obtains the data of the at least part of the audio file stored in the storage through the DMA circuit according to the file accessing information provided by the main processor.

Abstract translation: 提供移动设备芯片。 移动设备芯片包括主处理器，多媒体处理器和直接存储器访问（DMA）电路。 多媒体处理器电耦合到主处理器。 DMA电路访问存储器，并且DMA电路电耦合到多媒体处理器。 当移动设备芯片以正常模式工作时，主处理器将存储在存储器中的音频文件的至少一部分的文件访问信息提供给多媒体处理器。 当移动设备芯片以省电模式工作时，多媒体处理器根据由主处理器提供的文件访问信息通过DMA电路获得存储在存储器中的音频文件的至少部分的数据。

公开(公告)号：US20130097442A1

公开(公告)日：2013-04-18

申请号：US13275528

申请日：2011-10-18

Applicant: Chih-Ping Lin

Inventor： Chih-Ping Lin

IPC: G06F1/32 ,  G06F13/28

CPC classification number: G06F13/28 ,  G06F1/324 ,  G06F1/3287 ,  G06F1/3293 ,  Y02D10/122 ,  Y02D10/126 ,  Y02D10/171

Abstract: A mobile device chip is provided. The mobile device chip includes a main processor, a multimedia processor, and a direct memory access (DMA) circuit. The multimedia processor is electrically coupled to the main processor. The DMA circuit accesses storage, and the DMA circuit is electrically coupled to the multimedia processor. When the mobile device chip operates in a normal mode, the main processor provides file accessing information of at least part of an audio file stored in the storage to the multimedia processor. When the mobile device chip operates in a power-saving mode, the multimedia processor obtains the data of the at least part of the audio file stored in the storage through the DMA circuit according to the file accessing information provided by the main processor.

Abstract translation: 提供移动设备芯片。 移动设备芯片包括主处理器，多媒体处理器和直接存储器访问（DMA）电路。 多媒体处理器电耦合到主处理器。 DMA电路访问存储器，并且DMA电路电耦合到多媒体处理器。 当移动设备芯片以正常模式工作时，主处理器将存储在存储器中的音频文件的至少一部分的文件访问信息提供给多媒体处理器。 当移动设备芯片以省电模式工作时，多媒体处理器根据由主处理器提供的文件访问信息通过DMA电路获得存储在存储器中的音频文件的至少部分的数据。

公开(公告)号：US20120056295A1

公开(公告)日：2012-03-08

申请号：US13294945

申请日：2011-11-11

Applicant: CHIH-PING LIN ,  Pi-Kuang Chuang ,  Hung-Li Chang ,  Shih-Ming Chen ,  Hsiao-Ying Yang

Inventor： CHIH-PING LIN ,  Pi-Kuang Chuang ,  Hung-Li Chang ,  Shih-Ming Chen ,  Hsiao-Ying Yang

IPC: H01L27/06

CPC classification number: H01L21/823481 ,  H01L21/823412 ,  H01L21/823493 ,  H01L21/823807 ,  H01L21/823878 ,  H01L21/823892

Abstract: A method for fabricating a semiconductor device is provided. A substrate comprising a P-well is provided. A low voltage device area and a high voltage device area are defined in the P-well. A photoresist layer is formed on the substrate. A photomask comprising a shielding region is provided. The shielding region is corresponded to the high voltage device area. A pattern of the photomask is transferred to the photoresist layer on the substrate by a photolithography process using the photomask. A P-type ion field is formed outside of the high-voltage device area by selectively doping P-type ions into the substrate using the photoresist layer as a mask.

Abstract translation: 提供一种制造半导体器件的方法。 提供了包括P阱的衬底。 在P井中定义了低压装置区域和高压装置区域。 在基板上形成光致抗蚀剂层。 提供了包括屏蔽区域的光掩模。 屏蔽区域对应于高电压设备区域。 通过使用光掩模的光刻工艺将光掩模的图案转移到基板上的光致抗蚀剂层。 通过使用光致抗蚀剂层作为掩模，通过将P型离子选择性地掺杂到衬底中，在高电压器件区域的外部形成P型离子场。