公开(公告)号：US06902716B2

公开(公告)日：2005-06-07

申请号：US10282779

申请日：2002-10-29

Applicant: Shuit-Tong Lee ,  Igor Bello ,  Wenjun Zhang ,  Chit Yiu Chan

Inventor： Shuit-Tong Lee ,  Igor Bello ,  Wenjun Zhang ,  Chit Yiu Chan

IPC: C30B25/10 ,  C30B33/00 ,  B01J3/06 ,  B01J3/08

CPC classification number: C30B33/00 ,  C30B25/105 ,  C30B29/04 ,  C30B29/605

Abstract: The present invention deals with the generation of sharp single crystal diamond tips and the arrays of these tips, and their fabrication technology. The invention combines the deposition of synthetic diamond films with reactive etching processes. Upon the diamond orientation prepared and reactive etching environment with considerable directivity of ions, single crystal diamond tips with different apical angles can be fabricated. Very sharp diamond tips with an apical angle of no more than about 28° and a tip radius smaller than 50 nm are fabricated on pyramidal-shaped [001]-textured diamond films by subsequent reactive etching., The technology is based on selective etching of sp2- and sp3- hybridized carbons by the activated constituents of an etching environment, in particular based on atomic hydrogen, in a way similar to ion bombardment, which contributes to overall etching and local conversion of diamond to graphitic phase promoting further etching with chemically activated species. This novel method is capable of forming diamond tip arrays over large areas with great uniformity and high reproducibility. The diamond tips prepared are single diamond crystals with their [001] axes parallel each other and normal to the substrate surface. The invented technology enables the control of the apical angle, radius and density of the diamond tips.

Abstract translation: 本发明涉及产生尖锐的单晶金刚石尖端和这些尖端的阵列及其制造技术。 本发明将合成金刚石膜的沉积与反应性蚀刻工艺相结合。 在制备菱形取向和具有相当方向性离子的反应性蚀刻环境的情况下，可以制造具有不同顶角的单晶金刚石尖端。 通过随后的反应蚀刻，在金字塔形的[001]纹理金刚石膜上制造顶尖角不超过约28°，尖端半径小于50nm的非常锋利的金刚石尖端。该技术基于选择性蚀刻 通过蚀刻环境的活化组分，特别是基于原子氢，以类似于离子轰击的方式，杂交碳和杂原子的碳，这有助于 整体蚀刻和金刚石局部转化为石墨相，促进用化学活化物质进一步蚀刻。 这种新方法能够在大面积上形成金刚石尖端阵列，具有很好的均匀性和高重现性。 制备的金刚石尖端是单晶金刚石晶体，其[001]轴线彼此平行并垂直于基板表面。 本发明的技术能够控制金刚石尖端的顶角，半径和密度。